窒化ガリウム半導体の世界市場 (2025年～2032年)

窒化ガリウム半導体の世界市場は2024年に8億3,220万米ドルに達し、2032年には31億6,660万米ドルに達すると予測され、2025年から2032年までのCAGRは18.18%で成長します。

窒化ガリウム（GaN）半導体市場は、多様な産業における高効率・高性能半導体ソリューションへの需要の高まりにより、力強い成長を遂げています。自動車分野、特にEV市場も大きな成長促進要因です。GaNパワー・デバイスは、エネルギー効率を改善し、充電時間を短縮するため、EVのパワートレイン、車載充電器、インバーターでますます使用されるようになっています。

例えば、2023年の電気自動車販売台数は2022年を350万台上回り、前年比35%増となりました。これはわずか5年前の2018年の6倍以上です。さらに、再生可能エネルギー分野では、GaN半導体を活用して太陽光インバーターや風力発電システムの効率を高めています。GaNベースのインバーターは98%を超える電力変換効率を達成し、エネルギー損失と運用コストを削減できます。

例えば、Transphorm Inc.はGaNパワーモジュールを開発し、太陽光発電システムが従来のシステムと比べて占有面積を50％削減しながら、より高いエネルギー収率を実現できるようにしました。各国がネット・ゼロ・エミッション目標を達成するために再生可能エネルギーの導入を推進する中、この分野におけるGaN技術の需要は大幅に増加すると予想されます。

窒化ガリウム（GaN）半導体市場は、5Gインフラの展開、EV生産の拡大、航空宇宙・防衛アプリケーションの進歩、民生用電子機器の革新、再生可能エネルギーシステムへの移行などの要因によって、持続的な成長が見込まれています。

ダイナミクス

市場の原動力となる投資の急増

窒化ガリウム（GaN）半導体市場は、主に民間および公的部門からの投資急増によって力強い成長を遂げています。GaN半導体は、従来のシリコンベースの半導体と比較して、高効率、高速スイッチング、優れた熱性能など、その優れた特性により人気を集めています。

例えば、2025年には、窒化ガリウム（GaN）パワー・デバイスの大手イノベーターであるケンブリッジ・ガーン・デバイセズ（CGD）が、3,200万米ドルのシリーズC資金調達ラウンドの完了に成功しています。この投資は、ブリティッシュ・ペイシェント・キャピタルが参加する戦略的投資家が主導し、既存の投資家であるパークウォーク、BGF、ケンブリッジ・イノベーション・キャピタル（CIC）、フォーサイト・グループ、IQキャピタルが支援しました。

さらに2023年、世界ファウンドリーズ社は、バーモント州エセックス・ジャンクションにある同社施設において、GF社の差別化された窒化ガリウム（GaN）シリコン半導体の製造を加速させるため、米国政府から3,500万米ドルの連邦政府資金を獲得しました。この資金調達により、GFは高電圧と高温に対応できるユニークなGaNチップの大規模生産に近づきました。通信、自動車、航空宇宙から民生用電子機器に至るまで、さまざまな分野での投資の急増がGaN半導体市場を大きく後押ししています。

急速充電ソリューションの需要増加

GaNベースの充電器は、従来のシリコンベースの充電器と比較して、優れた性能、効率、コンパクト性を提供するため、急速充電ソリューションに対する需要の増加は、窒化ガリウム（GaN）半導体市場の重要な促進要因です。例えば、世界のEV市場が成長するにつれて、急速充電インフラに対する需要が増加しています。GaNベースの充電器は、過熱することなく、より高い電力レベル（例えば350kW以上）を扱うことができるため、高速EV充電ステーションに最適です。このため、自動車分野でのGaN技術の採用が加速しています。

さらに、データセンターにおけるより高速で効率的な電力管理の必要性が、GaN半導体の採用を促進しています。これらのデバイスは、より高い電力密度とより速いスイッチング速度を可能にし、クラウド・コンピューティングやビッグデータの増大するエネルギー需要を管理するために不可欠です。

さらに、ワイヤレス充電の利便性がGaN半導体の効率と相まって、民生用電子機器や自動車市場での需要を牽引しています。例えば、GaNベースのワイヤレス充電器は最大15Wの電力を供給できるため、スマートフォンやイヤホンなどの機器の充電時間を短縮できます。GaN技術は効率、サイズ、性能の面で大きな利点があるため、急速充電ソリューションに対する需要の増加はGaN半導体市場の主な促進要因となっています。

高い投資コスト

窒化ガリウム（GaN）半導体に関連する高い製造コストは、コストに敏感な産業での採用を制限することにより、市場の成長を大幅に抑制します。従来のシリコン（Si）半導体とは異なり、GaNデバイスは高価な原材料と複雑な製造工程を必要とするため、全体的なコストが上昇します。

例えば、GaNウエハーの価格は、2インチウエハー1枚当たり1,900～2,500米ドルであり、同サイズのシリコンウエハーの25～50米ドルに比べて高いです。さらに、5G基地局や衛星通信のような大電力アプリケーションに好まれるGaN-on-SiC（GaN-on-SiC）ウエハーはさらに高価で、2インチ・ウエハー1枚当たり3,000米ドルもします。

この価格差は、予算制約が購買決定を支配する産業において、GaN技術がシリコンと競争することを困難にしています。高価な原材料、複雑な製造プロセス、多額のインフラ投資によって引き起こされるGaN半導体の高い製造コストは、市場成長の大きな抑制要因となっています。

目次

第1章 分析手法と分析範囲

第2章 定義と概要

第3章 エグゼクティブサマリー

第4章 市場力学

• 影響要因
  • 促進要因
    • 急増する投資が市場を牽引
    • 急速充電ソリューションの需要増加
  • 抑制要因
    • 高い投資コスト
  • 機会
  • 影響分析

第5章 産業分析

• ポーターのファイブフォース分析
• サプライチェーン分析
• 価格分析
• 規制分析
• 持続可能な分析
• DMIの見解

第6章 種類別

• GaNパワーデバイス
• GaN RFデバイス
• GaN光電子デバイス
• GaN基板
• その他

第7章 用途別

• パワーエレクトロニクス
• RFエレクトロニクス
• オプトエレクトロニクス
• その他

第8章 技術別

• エンハンスメントモード GaN（eGaN）
• デプレッションモードGaN（dGaN）

第9章 エンドユーザー別

• 家電
• 自動車
• 通信
• 航空宇宙・防衛
• 医療
• エネルギー・ユーティリティ
• その他

第10章 サスティナビリティ分析

• 環境分析
• 経済分析
• ガバナンス分析

第11章 地域別

• 北米
  • 米国
  • カナダ
  • メキシコ
• 欧州
  • ドイツ
  • 英国
  • フランス
  • イタリア
  • スペイン
  • その他欧州地域
• 南米
  • ブラジル
  • アルゼンチン
  • その他南米
• アジア太平洋
  • 中国
  • インド
  • 日本
  • オーストラリア
  • その他アジア太平洋地域
• 中東・アフリカ

第12章 競合情勢

• 競合シナリオ
• 市況・シェア分析
• M&A分析

第13章 企業プロファイル

• Wolfspeed Inc
  • 企業概要
  • 製品ポートフォリオ
  • 財務概要
  • 主な動向
• Infineon Technologies
• Qorvo
• MACOM Technology Solutions
• Texas Instruments
• NXP Semiconductors
• GaN Systems
• Efficient Power Conversion（EPC）
• Navitas Semiconductor
• STMicroelectronics

第14章 付録

The Global Gallium Nitride Semiconductor Market reached US$ 832.2 million in 2024 and is expected to reach US$ 3,166.6 million by 2032, growing at a CAGR of 18.18% from 2025 to 2032.

The Gallium Nitride (GaN) semiconductor market is experiencing robust growth due to the increasing demand for high-efficiency, high-performance semiconductor solutions across diverse industries. The automotive sector, especially the EV market, is another significant growth driver. GaN power devices are increasingly used in EV powertrains, onboard chargers, and inverters because they improve energy efficiency and reduce charging times, which are critical for EV performance.

For instance, electric car sales in 2023 were 3.5 million higher than in 2022, a 35% year-on-year increase. This is more than six times higher than in 2018, just 5 years earlier. Additionally, the renewable energy sector is leveraging GaN semiconductors to enhance the efficiency of solar inverters and wind power systems. GaN-based inverters can achieve power conversion efficiencies exceeding 98%, reducing energy losses and operational costs.

For instance, Transphorm Inc. has developed GaN power modules that enable solar power systems to deliver higher energy yields while occupying 50% less space compared to traditional systems. As countries push for renewable energy adoption to meet net-zero emission goals, the demand for GaN technology in this sector is expected to rise significantly.

The Gallium Nitride (GaN) semiconductor market is poised for sustained growth, driven by factors such as 5G infrastructure deployment, expanding EV production, advancements in aerospace and defense applications, consumer electronics innovation, and the transition to renewable energy systems.

Dynamics

Surging Investments Powering the Market

The Gallium Nitride (GaN) semiconductor market is experiencing robust growth, primarily driven by surging investments from both private and public sectors. GaN semiconductors are gaining traction due to their superior properties, such as higher efficiency, faster switching speeds, and better thermal performance compared to traditional silicon-based semiconductors.

For instance, in 2025, Cambridge GaN Devices (CGD), a leading innovator in gallium nitride (GaN) power devices, has successfully closed a US$ 32 million Series C funding round. The investment was led by a strategic investor with participation from British Patient Capital and supported by existing investors Parkwalk, BGF, Cambridge Innovation Capital (CIC), Foresight Group, and IQ Capital.

Additionally, in 2023, GlobalFoundries, had been awarded US$ 35 million in federal funding from the U.S. government to accelerate the manufacturing of GF's differentiated gallium nitride (GaN) on silicon semiconductors at its facility in Essex Junction, Vermont. This funding brings GF closer to large-scale production of GaN chips, which are unique in their ability to handle high voltages and temperatures. The surge in investments across various sectors-ranging from telecommunications, automotive, and aerospace to consumer electronics-is significantly propelling the GaN semiconductor market.

Increasing Demand for Fast Charging Solutions

The increasing demand for fast charging solutions is a significant driver of the Gallium Nitride (GaN) Semiconductor Market, as GaN-based chargers offer superior performance, efficiency, and compactness compared to traditional silicon-based chargers. For instance, as the global EV market grows, the demand for fast-charging infrastructure is increasing. GaN-based chargers can handle higher power levels (e.g., 350 kW or more) without overheating, making them ideal for high-speed EV charging stations. This is accelerating the adoption of GaN technology in the automotive sector.

Additionally, the need for faster and more efficient power management in data centers is driving the adoption of GaN semiconductors. These devices enable higher power density and faster switching speeds, which are critical for managing the growing energy demands of cloud computing and big data.

Moreover, the convenience of wireless charging, combined with the efficiency of GaN semiconductors, is driving demand in the consumer electronics and automotive markets. For example, GaN-based wireless chargers can deliver up to 15W of power, enabling faster charging times for devices like smartphones and earbuds. The increasing demand for fast-charging solutions is a major driver of the GaN Semiconductor Market, as GaN technology offers significant advantages in terms of efficiency, size, and performance.

High Investment Costs

The high production costs associated with Gallium Nitride (GaN) semiconductors significantly restrain market growth by limiting adoption across cost-sensitive industries. Unlike traditional silicon (Si) semiconductors, GaN devices require expensive raw materials and complex manufacturing processes, leading to elevated overall costs.

For instance, the price of a GaN wafer ranges from US$ 1,900 to US$ 2,500 per 2-inch wafer, compared to US$ 25 to US$ 50 for a silicon wafer of the same size. Moreover, GaN-on-silicon carbide (GaN-on-SiC) wafers, preferred for high-power applications like 5G base stations and satellite communications, are even more expensive, costing up to US$ 3,000 per 2-inch wafer.

This price disparity makes it challenging for GaN technology to compete with silicon in industries where budget constraints dominate purchasing decisions. The high production costs of GaN semiconductors, driven by expensive raw materials, complex fabrication processes, and significant infrastructure investments, act as a major restraint on market growth.

Segment Analysis

The global Gallium Nitride Semiconductor market is segmented based on type, application, technology, end-user and region.

GaN Power Devices Leading the Charge in Gallium Nitride Semiconductor Market

The GaN power devices segment is a key driver of growth in the Gallium Nitride (GaN) semiconductor market, primarily due to the increasing demand for high-efficiency, high-power density solutions across various industries. GaN power devices, such as transistors, diodes, and integrated circuits (ICs), offer significant advantages over traditional silicon-based devices, including faster switching speeds, higher breakdown voltage, and improved thermal performance.

In the automotive sector, the rising adoption of electric vehicles (EVs) is a major factor driving demand for GaN power devices. Companies like Tesla and Lucid Motors are incorporating GaN-based onboard chargers and powertrains, which enable faster charging and greater energy efficiency, ultimately improving driving range. For instance, GaN Systems reported that their GaN transistors can reduce energy losses by up to 40% compared to silicon-based solutions, enhancing overall EV performance.

Additionally, GaN devices contribute to lighter and more compact vehicle designs, addressing the automotive industry's focus on energy efficiency and performance optimization. Thus, GaN power devices segment drives the Gallium Nitride semiconductor market by enabling high-performance, energy-efficient solutions across multiple industries.

Geographical Penetration

Strong Government Support and Strategies by the Companies in North America

The North America region dominates the Gallium Nitride (GaN) semiconductor market due to strong technological advancements, robust investments, and the presence of leading industry players. The region's dominance is further bolstered by widespread adoption of GaN technology across key industries such as automotive, aerospace and defense, telecommunications, renewable energy, and consumer electronics.

For instance, in 2024, Texas Instruments, stated that it has begun production of gallium nitride (GaN)-based power semiconductors at its factory in Aizu, Japan. Coupled with its existing GaN manufacturing in Dallas, Texas, TI will now internally manufacture four times more GaN-based power semiconductors, as Aizu ramps to production.

Additionally, in 2024, ROHM Co., Ltd. (ROHM), stated that ROHM and TSMC had entered a strategic partnership on development and volume production of gallium nitride (GaN) power devices for electric vehicle applications. The partnership will integrate ROHM's device development technology with TSMC's industry-leading GaN-on-silicon process technology to meet the growing demand for superior high-voltage and high-frequency properties over silicon for power devices. Therefore, North America's dominance in the GaN semiconductor market is driven by its advanced defense applications, leadership in 5G deployment, growing EV ecosystem, consumer electronics demand, and a thriving R&D environment.

Competitive Landscape

The major global players in the market include Wolfspeed Inc, Infineon Technologies, Qorvo, MACOM Technology Solutions, Texas Instruments, NXP Semiconductors, GaN Systems, Efficient Power Conversion (EPC), Navitas, Semiconductor, STMicroelectronics and among others.

Key Developments

• In 2024, Infineon Technologies AG, partnered with Canada-based AWL-Electricity Inc., a pioneer in MHz resonant capacitive coupling power transfer technology. Infineon provides AWL-E with CoolGaN GS61008P allowing the development of advanced wireless power solutions, enabling new ways to solve power challenges in various industries.
• In 2024, Renesas Electronics Corporation, had completed the acquisition of Transphorm, Inc, a global leader in gallium nitride (GaN) as of June 20, 2024. With the closing of the acquisition now completed, Renesas will immediately start offering GaN-based power products and related reference designs to meet the rising demand for wide bandgap (WBG) semiconductor products.

By Type

• GaN Power Devices
• GaN RF Devices
• GaN Optoelectronic Devices
• GaN Substrates
• Others

By Application

• Power Electronics
• RF Electronics
• Optoelectronics
• Others

By Technology

• Enhancement-Mode GaN (eGaN)
• Depletion-Mode GaN (dGaN)

By End-User

• Consumer Electronics
• Automotive
• Telecommunications
• Aerospace & Defense
• Healthcare
• Energy & Utilities
• Others

By Region

• North America
  • US
  • Canada
  • Mexico
• Europe
  • Germany
  • UK
  • France
  • Italy
  • Spain
  • Rest of Europe
• South America
  • Brazil
  • Argentina
  • Rest of South America
• Asia-Pacific
  • China
  • India
  • Japan
  • Australia
  • Rest of Asia-Pacific
• Middle East and Africa

Why Purchase the Report?

• To visualize the global gallium nitride semiconductor market segmentation based on type, application, technology, end-user and region.
• Identify commercial opportunities by analyzing trends and co-development.
• Excel data sheet with numerous data points at the gallium nitride semiconductor market level for all segments.
• PDF report consists of a comprehensive analysis after exhaustive qualitative interviews and an in-depth study.
• Product mapping available as excel consisting of key products of all the major players.

The global Gallium Nitride Semiconductor market report would provide approximately 70 tables, 61 figures and 205 pages.

Target Audience 2024

• Manufacturers/ Buyers
• Industry Investors/Investment Bankers
• Research Professionals
• Emerging Companies

Table of Contents

1. Methodology and Scope

• 1.1. Research Methodology
• 1.2. Research Objective and Scope of the Report

2. Definition and Overview

3. Executive Summary

• 3.1. Snippet by Type
• 3.2. Snippet by Application
• 3.3. Snippet by Technology
• 3.4. Snippet by End-User
• 3.5. Snippet by Region

4. Dynamics

• 4.1. Impacting Factors
  • 4.1.1. Drivers
    • 4.1.1.1. Surging Investments Powering the Market
    • 4.1.1.2. Increasing Demand for Fast Charging Solutions
  • 4.1.2. Restraints
    • 4.1.2.1. High Investment Costs
  • 4.1.3. Opportunity
  • 4.1.4. Impact Analysis

5. Industry Analysis

• 5.1. Porter's Five Force Analysis
• 5.2. Supply Chain Analysis
• 5.3. Pricing Analysis
• 5.4. Regulatory Analysis
• 5.5. Sustainable Analysis
• 5.6. DMI Opinion

6. By Type

• 6.1. Introduction
  • 6.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
  • 6.1.2. Market Attractiveness Index, By Type
• 6.2. GaN Power Devices*
  • 6.2.1. Introduction
  • 6.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
• 6.3. GaN RF Devices
• 6.4. GaN Optoelectronic Devices
• 6.5. GaN Substrates
• 6.6. Others

7. By Application

• 7.1. Introduction
  • 7.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
  • 7.1.2. Market Attractiveness Index, By Application
• 7.2. Power Electronics*
  • 7.2.1. Introduction
  • 7.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
• 7.3. RF Electronics
• 7.4. Optoelectronics
• 7.5. Others

8. By Technology

• 8.1. Introduction
  • 8.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
  • 8.1.2. Market Attractiveness Index, By Technology
• 8.2. Enhancement-Mode GaN (eGaN)*
  • 8.2.1. Introduction
  • 8.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
• 8.3. Depletion-Mode GaN (dGaN)

9. By End-User

• 9.1. Introduction
  • 9.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By End-User
  • 9.1.2. Market Attractiveness Index, By End-User
• 9.2. Consumer Electronics*
  • 9.2.1. Introduction
  • 9.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
• 9.3. Automotive
• 9.4. Telecommunications
• 9.5. Aerospace & Defense
• 9.6. Healthcare
• 9.7. Energy & Utilities
• 9.8. Others

10. Sustainability Analysis

• 10.1. Environmental Analysis
• 10.2. Economic Analysis
• 10.3. Governance Analysis

11. By Region

• 11.1. Introduction
  • 11.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Region
  • 11.1.2. Market Attractiveness Index, By Region
• 11.2. North America
  • 11.2.1. Introduction
  • 11.2.2. Key Region-Specific Dynamics
  • 11.2.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
  • 11.2.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
  • 11.2.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
  • 11.2.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By End-User
  • 11.2.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
    • 11.2.7.1. US
    • 11.2.7.2. Canada
    • 11.2.7.3. Mexico
• 11.3. Europe
  • 11.3.1. Introduction
  • 11.3.2. Key Region-Specific Dynamics
  • 11.3.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
  • 11.3.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
  • 11.3.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
  • 11.3.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By End-User
  • 11.3.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
    • 11.3.7.1. Germany
    • 11.3.7.2. UK
    • 11.3.7.3. France
    • 11.3.7.4. Italy
    • 11.3.7.5. Spain
    • 11.3.7.6. Rest of Europe
• 11.4. South America
  • 11.4.1. Introduction
  • 11.4.2. Key Region-Specific Dynamics
  • 11.4.3. Key Region-Specific Dynamics
  • 11.4.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
  • 11.4.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
  • 11.4.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
  • 11.4.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By End-User
  • 11.4.8. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
    • 11.4.8.1. Brazil
    • 11.4.8.2. Argentina
    • 11.4.8.3. Rest of South America
• 11.5. Asia-Pacific
  • 11.5.1. Introduction
  • 11.5.2. Key Region-Specific Dynamics
  • 11.5.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
  • 11.5.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
  • 11.5.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
  • 11.5.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By End-User
  • 11.5.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
    • 11.5.7.1. China
    • 11.5.7.2. India
    • 11.5.7.3. Japan
    • 11.5.7.4. Australia
    • 11.5.7.5. Rest of Asia-Pacific
• 11.6. Middle East and Africa
  • 11.6.1. Introduction
  • 11.6.2. Key Region-Specific Dynamics
  • 11.6.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
  • 11.6.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
  • 11.6.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
  • 11.6.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By End-User

12. Competitive Landscape

• 12.1. Competitive Scenario
• 12.2. Market Positioning/Share Analysis
• 12.3. Mergers and Acquisitions Analysis

13. Company Profiles

• 13.1. Wolfspeed Inc*
  • 13.1.1. Company Overview
  • 13.1.2. Product Portfolio and Description
  • 13.1.3. Financial Overview
  • 13.1.4. Key Developments
• 13.2. Infineon Technologies
• 13.3. Qorvo
• 13.4. MACOM Technology Solutions
• 13.5. Texas Instruments
• 13.6. NXP Semiconductors
• 13.7. GaN Systems
• 13.8. Efficient Power Conversion (EPC)
• 13.9. Navitas Semiconductor
• 13.10. STMicroelectronics

LIST NOT EXHAUSTIVE

14. Appendix

• 14.1. About Us and Services
• 14.2. Contact Us