窒化ガリウム半導体デバイス市場：地域別、2024年～2031年

窒化ガリウム半導体デバイス市場評価、2024年～2031年

窒化ガリウム半導体デバイス市場が急成長しています。GaNデバイスは、従来のシリコンベースのものと比較して高い性能を発揮します。GaNには、効率の向上、スイッチング速度の高速化、電力処理能力の向上など、いくつかの利点があります。これらの特性により、パワーエレクトロニクス、無線周波数（RF）デバイス、次世代の電気自動車など、幅広い用途に適しています。市場規模は2024年に232億4,000万米ドルを超え、2031年には約345億9,000万米ドルに達します。

5Gネットワークの展開、電化の進展、航空宇宙・防衛分野の改善といった動向が、GaNデバイスの需要を大きく押し上げています。GaN技術が進化し、製造技術がよりコスト効率よくなるにつれて、この市場は今後さらに成長すると予想されます。費用対効果が高く効率的な窒化ガリウム半導体デバイスへの需要の高まりにより、2024年から2031年までのCAGRは5.10%で市場は成長します。

窒化ガリウム半導体デバイス市場：定義/概要

窒化ガリウム（GaN）半導体デバイスは、高い電子移動度と飽和速度を持つダイレクトバンドギャップ半導体であるGaN材料で構成された先進的な電子部品です。GaNデバイスには、パワーエレクトロニクスやオプトエレクトロニクスで利用されるトランジスタ、ダイオード、LEDが含まれます。これらのデバイスは、優れた電力効率、熱伝導性、より高い温度と周波数で機能する能力など、いくつかの重要な点で、典型的なシリコンベースの半導体を上回っています。

GaN半導体デバイスは、その卓越した性能特性により、さまざまな産業で広く使用されています。通信業界では、5GネットワークのRFアンプのような高周波アプリケーションに不可欠です。パワーエレクトロニクスでは、GaNトランジスタとダイオードが電源、インバーター、電気自動車（EV）充電システムに使用され、大幅な省エネとパワーモジュールの小型軽量化を実現しています。オプトエレクトロニクス産業では、GaNベースのLEDやレーザーダイオードが照明、ディスプレイ、データストレージに利用され、その恩恵を受けています。

GaN半導体デバイスの成長予測は楽観的で、さまざまな産業で継続的な進歩と採用の増加が見込まれています。より高い経済性と性能への要求が高まる中、GaNデバイスは電気自動車、再生可能エネルギー発電システム、次世代無線通信（6GY以降）の成長において重要な役割を果たすと予測されます。GaN技術の革新により、より小型で、より高速で、よりエネルギー効率の高いエレクトロニクスが実現すると予測されます。

高性能エレクトロニクスへの需要は窒化ガリウム半導体デバイス市場を牽引するか？

高性能エレクトロニクスへの要望が、窒化ガリウム（GaN）半導体デバイス市場の拡大を後押ししそうです。GaNは、従来のシリコンベースのデバイスに比べて、効率の向上、スイッチング速度の高速化、パワーハンドリングの改善など、大きな利点があります。これらの特性により、GaNはパワーエレクトロニクス、RFアンプ、LED照明など、さまざまなアプリケーションに最適です。産業界がより効率的で小型のソリューションを求める中、GaN技術はますます現実的な選択肢と見なされるようになり、世界の採用と市場拡大につながっています。

GaN技術の継続的な開発により、GaN技術はより魅力的なものとなっています。研究開発の結果、GaNの材料特性、デバイス設計、製造プロセスが強化されています。これにより、性能が向上するだけでなく価格も下がり、GaNデバイスはより手頃な価格になっています。

シリコンを上回る優れた性能GaNデバイスには、標準的なシリコンベースの半導体を上回るいくつかの利点があります。効率が向上し、スイッチング速度が速くなり、電力処理能力が向上します。その結果、パワーエレクトロニクス、RFデバイス、さらには次世代の電気自動車など、さまざまなアプリケーションで性能が向上します。

バルク窒化ガリウム（GAN）の高コストは窒化ガリウム半導体デバイス市場の成長に影響するか？

バルク窒化ガリウム（GaN）の高コストは、GaN半導体デバイス市場の成長に影響を与える可能性があります。GaNは、効率や電力処理能力の向上といった性能向上のメリットを提供する一方で、その初期コストが従来のシリコンベースのデバイスの障壁となっています。このコスト面は、特に価格に敏感な産業や費用対効果が重要なアプリケーションにおいて、一般的な採用を遅らせる可能性があります。

しかし、現在の研究開発活動は、製造コストの引き下げと製造効率の向上を目指しており、時間の経過とともにこの障害を緩和し、GaN技術の幅広い市場受容を促進する可能性があります。

限られた規模の経済は、窒化ガリウム（GaN）半導体デバイス市場の成長に影響を与える可能性があります。GaN技術は、特にバルク形態では、シリコンなどのより確立された半導体材料に匹敵する規模の経済を得る上でハードルがあります。この制約が生産コストの上昇を招き、価格競争力や様々なアプリケーションへの普及に影響を及ぼす可能性があります。この障害を克服し、GaN半導体デバイス市場の成長軌道を押し上げるためには、生産能力を増強し、製造プロセスを改善する努力が不可欠です。

目次

第1章 イントロダクション

• 市場の定義
• 市場セグメンテーション
• 調査手法

第2章 エグゼクティブサマリー

• 主な調査結果
• 市場概要
• 市場ハイライト

第3章 市場概要

• 市場規模と成長の可能性
• 市場動向
• 市場促進要因
• 市場抑制要因
• 市場機会
• ポーターのファイブフォース分析

第4章 窒化ガリウム半導体デバイス市場：デバイスタイプ別

• GaNパワー半導体
• GaN高周波（RF）デバイス
• GaNオプトエレクトロニクスデバイス

第5章 窒化ガリウム半導体デバイス市場：用途別

• 電源
• RFデバイス
• 自動車
• コンシューマーエレクトロニクス
• 通信機器
• 産業用機器
• 航空宇宙・防衛
• ヘルスケア

第6章 窒化ガリウム半導体デバイス市場：最終用途産業別

• 通信
• 自動車
• 家電
• 航空宇宙・防衛
• 産業用
• ヘルスケア

第7章 地域分析

• 北米
• 米国
• カナダ
• メキシコ
• 欧州
• 英国
• ドイツ
• フランス
• イタリア
• アジア太平洋
• 中国
• 日本
• インド
• オーストラリア
• ラテンアメリカ
• ブラジル
• アルゼンチン
• チリ
• 中東・アフリカ
• 南アフリカ
• サウジアラビア
• アラブ首長国連邦

第8章 市場力学

• 市場促進要因
• 市場抑制要因
• 市場機会
• COVID-19の市場への影響

第9章 競合情勢

• 主要企業
• 市場シェア分析

第10章 企業プロファイル

• Wolfspeed, Inc.（US）
• Qorvo, Inc.（US）
• MACOM Technology Solutions Holdings, Inc.（US）
• Infineon Technologies AG（Germany）
• Sumitomo Electric Industries, Ltd.（Japan）
• Navitas Semiconductor（US）
• Mitsubishi Electric（Japan）
• Epistar Corporation（Taiwan）
• Cree, Inc.（US）（acquired by Wolfspeed in 2021）
• Transphorm, Inc.（US）
• Efficient Power Conversion Corporation（EPC）（US）
• GaN Systems Inc.（US）
• Nichia Corporation（Japan）
• Texas Instruments Incorporated（US）
• Microchip Technology Incorporated（US）
• Panasonic Corporation（Japan）
• Analog Devices, Inc.（US）
• Visic Technologies, Inc.（US）
• Integra Technologies, Inc.（US）
• Exagan, Inc.（US）

第11章 市場の展望と機会

• 新興技術
• 今後の市場動向
• 投資機会

第12章 付録

• 略語リスト
• 出典と参考文献

Gallium Nitride Semiconductor Device Market Valuation - 2024-2031

The market for gallium nitride semiconductor devices is growing rapidly. The GaN devices' higher performance when compared to classic silicon-based ones. GaN has several advantages, including increased efficiency, faster switching speeds, and improved power handling capabilities. These characteristics make them suitable for a wide range of applications, including power electronics, radio frequency (RF) devices, and future generations of electric vehicles. The market size surpass USD 23.24 Billion valued in 2024 to reach a valuation of aroundUSD 34.59 Billion by 2031.

Trends like as the deployment of 5G networks, increased electrification, and improvements in the aerospace and defense sectors are driving a significant demand for GaN devices. As GaN technology evolves and manufacturing techniques become more cost-effective, we may expect this market to grow more in the next years. The rising demand for cost-effective and efficient gallium nitride semiconductor device is enabling the market to grow at aCAGR of 5.10% from 2024 to 2031.

Gallium Nitride Semiconductor Device Market: Definition/ Overview

Gallium Nitride (GaN) semiconductor devices are advanced electronic components constructed from the GaN material, a direct bandgap semiconductor with high electron mobility and saturation velocity. GaN devices include transistors, diodes, and LEDs, which are utilized in power electronics and optoelectronics. These devices exceed typical silicon-based semiconductors in several important ways, including great power efficiency, thermal conductivity, and the ability to function at higher temperatures and frequencies.

GaN semiconductor devices are widely used in a variety of industries due to their outstanding performance characteristics. In the telecommunications industry, they are critical for high-frequency applications like RF amplifiers in 5G networks. In power electronics, GaN transistors and diodes are used in power supplies, inverters, and electric vehicle (EV) charging systems, resulting in significant energy savings and smaller, lighter power modules. The optoelectronics industry benefits from GaN-based LEDs and laser diodes, which are utilized in lighting, displays, and data storage.

The projected growth of GaN semiconductor devices looks optimistic, with continuing advances and increased adoption across a variety of industries. As the demand for greater economy and performance rises, GaN devices are projected to play an important part in the growth of electric vehicles, renewable energy systems, and next-generation wireless communications (6G and beyond). Innovations in GaN technology are projected to result in even smaller, quicker, and more energy-efficient electronics.

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Will Demand for High-Performance Electronics Drive the Gallium Nitride Semiconductor Device Market?

The desire for high-performance electronics is likely to fuel expansion in the Gallium Nitride (GaN) semiconductor device market. GaN has substantial advantages over traditional silicon-based devices, including an increase in efficiency, faster switching speeds, and improved power handling. These properties make GaN ideal for a variety of applications, including power electronics, RF amplifiers, and LED illumination. As industries seek more efficient and smaller solutions, GaN technology is increasingly viewed as a viable choice, resulting in global adoption and market expansion.

Advances in GaN technology continuous developments in GaN technology make it more appealing. Research and development are resulting in enhanced GaN material properties, device design, and production processes. This not only improves performance but also lowers prices, making GaN devices more affordable.

Superior performance over silicon GaN devices has several advantages over standard silicon-based semiconductors. They have increased efficiency, faster switching rates, and better power-handling capacity. This results in improved performance in a variety of applications, including power electronics, RF devices, and even future generations of electric vehicles.

Will the High Cost of Bulk Gallium Nitride (GAN) Impact the Growth of the Gallium Nitride Semiconductor Device Market?

The high cost of bulk gallium nitride (GaN) could have an impact on the growth of the GaN semiconductor device market. While GaN provides improved performance benefits, such as increase in efficiency and power handling capabilities, its initial cost remains a barrier to traditional silicon-based devices. This cost aspect may slow down general adoption, particularly in price-sensitive industries and applications where cost-effectiveness is critical.

However, current research and development activities are aimed at lowering production costs and improving manufacturing efficiencies, which may alleviate this obstacle over time and drive broader market acceptance of GaN technology.

The limited economies of scale could have an impact on the growth of the Gallium Nitride (GaN) semiconductor device market. GaN technology, particularly in bulk form, presents hurdles in obtaining economies of scale comparable to more established semiconductor materials such as silicon. This constraint might result in higher production costs, affecting pricing competitiveness and widespread adoption across a variety of applications. Efforts to increase production capacity and improve manufacturing processes are critical to overcoming this obstacle and boosting the growth trajectory of the GaN semiconductor device market.

Category-Wise Acumens

How High-Power Density Accelerates the GaN Power Semiconductors for the Gallium Nitride Semiconductor Device Market?

The GaN power semiconductor category dominates the gallium nitride semiconductor device market. The market adoption of GaN power semiconductors is largely driven by their high-power density. GaN devices have higher power density than traditional silicon-based competitors, enabling smaller, lighter, and more efficient power electronics solutions. This advantage is especially useful in applications like electric vehicles, renewable energy systems, and telecommunications infrastructure, where reducing size and weight while boosting efficiency is crucial. As industries prioritize small and energy-efficient solutions, GaN semiconductors' inherent high power density makes them well-suited for significant expansion in these applications.

Superior efficiency is a primary driver of the Gallium Nitride (GaN) semiconductor device market. GaN devices are more efficient than typical silicon-based semiconductors, especially in power electronics and RF applications. This efficiency advantage translates into lower energy consumption, lower operating costs, and improved performance, making GaN an appealing option for enterprises seeking energy efficiency and sustainability. As demand for more efficient electronics rises across multiple industries, GaN's exceptional efficiency prepares it for significant market expansion.

The GaN Radio Frequency (RF) Device category is growing the quickest in the Gallium Nitride Semiconductor Device Market. This rapid increase is being driven by the introduction of next-generation wireless technology and advances in numerous RF applications.

Will Solar Inverters Power Supplies Segment Propel for the Gallium Nitride Semiconductor Device Market?

The gallium nitride semiconductor device market is currently led by the power supplies segment. This dominance is primarily driven by the growing demand for efficient power conversion across a variety of industries. Solar inverters are a significant market segment pushing the usage of Gallium Nitride (GaN) semiconductor devices.

GaN's ability to handle high frequencies and voltages more efficiently makes it ideal for usage in power supplies in solar inverters. These inverters require strong, high-performance components to convert DC electricity from solar panels into AC power for use in electrical networks or on-site consumption. GaN devices have benefits such as increased power density, smaller size and weight, and enhanced reliability, making them increasingly popular in the solar energy industry for improving overall system efficiency and performance.

Telecommunications is the fastest growing segment in the gallium nitride semiconductor device market. This spike is being driven by the adoption of next-generation wireless technologies and the growing need for greater data transfer speeds. The global deployment of 5G networks demands high-performance radio frequency (RF) components for base stations and user equipment. GaN technology is ideal for this application because of its high frequency and power handling capabilities.

Country/Region-wise Acumens

Will Government Support in the Asian Pacific Region Lead the Gallium Nitride Semiconductor Device Market?

The Asia-Pacific region currently dominates the gallium nitride semiconductor device market. Government support in Asia-Pacific is projected to fuel expansion in the Gallium Nitride (GaN) semiconductor device market. Many Asian countries, including Japan, South Korea, and China, have efforts and policies in place to promote semiconductor manufacturing and drive technological innovation.

These initiatives include sponsoring research and development, offering incentives to semiconductor companies, and encouraging the use of advanced technologies such as GaN for applications ranging from power electronics to telecommunications. Such support helps to strengthen infrastructure, lower production costs, and expedite market adoption, all of which contribute to the overall growth of the GaN semiconductor device market in the region and beyond.

The growing demand for consumer electronics in Asia-Pacific is likely to propel the Gallium Nitride (GaN) semiconductor device market. As consumer electronics makers strive to meet rising demand for smaller, more efficient, and high-performance products, GaN technology provides substantial benefits. GaN semiconductors enable the creation of tiny power adapters, fast-charging solutions, and high-frequency RF components, which are consistent with the trend toward portable, energy-efficient devices. The growing consumer electronics market in Asia-Pacific, fueled by rising disposable incomes and technical improvements, creates a good environment for GaN semiconductor adoption and market expansion.

Will Early Adoption of New Technologies Drive the Gallium Nitride Semiconductor Device Market in North America?

North America is expected to be the most rapidly increasing area in the gallium nitride semiconductor device market. Early adoption of new technologies is projected to drive the North American region's gallium nitride (GaN) semiconductor device market. North America, noted for its strong innovation ecosystem and early adoption of breakthrough technologies, is well-positioned to capitalize on GaN's advantages in various applications, including power electronics, RF devices, and LED lighting. The region's industries, such as automotive, telecommunications, and aerospace, place a premium on performance, efficiency, and reliability, all of which GaN excels in. As North American enterprises seek competitive advantages and technological leadership, using GaN semiconductor devices is expected to accelerate, adding to regional market growth.

North America's powerful ecosystem of research institutions, technological businesses, and venture capital promotes rapid semiconductor innovation and development. GaN's outstanding performance in power electronics, RF applications, and LED lighting is consistent with the region's focus on efficiency, performance, and sustainability. As automotive, telecommunications, and renewable energy industries seek cutting-edge solutions, GaN usage is likely to increase, aided by continued breakthroughs and investments in revolutionary semiconductor technologies throughout North America.

Competitive Landscape

The gallium nitride semiconductor device market is a dynamic and competitive space, characterized by a diverse range of players vying for market share. These players are on the run for solidifying their presence through the adoption of strategic plans such as collaborations, mergers, acquisitions, and political support.

The organizations are focusing on innovating their product line to serve the vast population in diverse regions. Some of the prominent players operating in the gallium nitride semiconductor device market include:

• Wolfspeed, Inc.
• Qorvo, Inc.
• MACOM Technology Solutions Holdings, Inc.
• Infineon Technologies AG
• Sumitomo Electric Industries, Ltd.
• Navitas Semiconductor
• Mitsubishi Electric
• Epistar Corporation
• Cree, Inc.
• Transphorm, Inc.
• Efficient Power Conversion Corporation (EPC)
• GaN Systems, Inc.
• Nichia Corporation
• Texas Instruments Incorporated
• Microchip Technology Incorporated
• Panasonic Corporation
• Analog Devices, Inc.
• Visic Technologies, Inc.
• Integra Technologies, Inc.
• Exagan, Inc.

Latest Developments

• In April 2024, Transphorm, Inc., a GaN power semiconductor provider, and Weltrend Semiconductor Inc. launched two new GaN System-in-Packages (SiPs). The latest additions, the WT7162RHUG24C and WT7162RHUG24B, combine Weltrend's high-frequency multi-mode (QR/Valley Switching) Flyback PWM controller with Transphorm's 480 mQ and 150 mQ SuperGaN FETs, respectively. This partnership expands on Weltrend's flagship GaN SiP from last year, creating the first SiP product line based on Transphorm's SuperGaN technology.
• In March 2024, Efficient Power Conversion Corporation announced EPC2361, a revolutionary gallium nitride (GaN) field-effect transistor (FET) with the market's lowest on-resistance at 100V, 1mQ. This invention is expected to double power density when compared to EPC's previous generation products. The EPC2361 has an excellent typical RDS (on) of only 2mQ) and is placed in a thermally improved QFN packaging with an exposed top, taking up a small 3mm x 5mm footprint.
• In January 2024, Transphorm Inc. launched two new 650V SuperGaN devices, packaged in a 4-lead TO-247 package (TO-247-4L). The new FETs, TP65H035G4YS and TP65H050G4YS, have on-resistances of 35mΩ and 50mΩ, respectively. They include a Kelvin-source terminal, allowing for flexibility switching with low energy losses.
• In November 2023, Cambridge GaN Devices (CGD) teamed with Cambridge University Technical Services (CUTS) in the UK and Chicony Power Technology in Taiwan to offer high-power-density adapters and data center power solutions using GaN technology.

TABLE OF CONTENTS

1. Introduction

• Market Definition
• Market Segmentation
• Research Methodology

2. Executive Summary

• Key Findings
• Market Overview
• Market Highlights

3. Market Overview

• Market Size and Growth Potential
• Market Trends
• Market Drivers
• Market Restraints
• Market Opportunities
• Porter's Five Forces Analysis

4. Gallium Nitride Semiconductor Device Market, By Device Type

• GaN Power Semiconductors
• GaN Radio Frequency (RF) Devices
• GaN Optoelectronic Devices

5. Gallium Nitride Semiconductor Device Market, By Application

• Power Supplies
• RF Devices
• Automotive
• Consumer Electronics
• Telecommunications
• Industrial
• Aerospace and Defense
• Healthcare

6. Gallium Nitride Semiconductor Device Market, By End-Use Industry

• Telecommunications
• Automotive
• Consumer Electronics
• Aerospace and Defense
• Industrial
• Healthcare

7. Regional Analysis

• North America
• United States
• Canada
• Mexico
• Europe
• United Kingdom
• Germany
• France
• Italy
• Asia-Pacific
• China
• Japan
• India
• Australia
• Latin America
• Brazil
• Argentina
• Chile
• Middle East and Africa
• South Africa
• Saudi Arabia
• UAE

8. Market Dynamics

• Market Drivers
• Market Restraints
• Market Opportunities
• Impact of COVID-19 on the Market

9. Competitive Landscape

• Key Players
• Market Share Analysis

10. Company Profiles

• Wolfspeed, Inc. (US)
• Qorvo, Inc. (US)
• MACOM Technology Solutions Holdings, Inc. (US)
• Infineon Technologies AG (Germany)
• Sumitomo Electric Industries, Ltd. (Japan)
• Navitas Semiconductor (US)
• Mitsubishi Electric (Japan)
• Epistar Corporation (Taiwan)
• Cree, Inc. (US) (acquired by Wolfspeed in 2021)
• Transphorm, Inc. (US)
• Efficient Power Conversion Corporation (EPC) (US)
• GaN Systems Inc. (US)
• Nichia Corporation (Japan)
• Texas Instruments Incorporated (US)
• Microchip Technology Incorporated (US)
• Panasonic Corporation (Japan)
• Analog Devices, Inc. (US)
• Visic Technologies, Inc. (US)
• Integra Technologies, Inc. (US)
• Exagan, Inc. (US)

11. Market Outlook and Opportunities

• Emerging Technologies
• Future Market Trends
• Investment Opportunities

12. Appendix

• List of Abbreviations
• Sources and References