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市場調査レポート
商品コード
1455062
炭化ケイ素（SiC）パワーデバイスの世界市場規模、シェア、成長分析、タイプ別、用途別-産業予測、2024～2031年Global Silicon Carbide (SiC) Power Devices Market Size, Share, Growth Analysis, By Type(SiC Power Module and SiC Power Diode), By Application(Power Supplies, and Inverters) - Industry Forecast 2024-2031 |
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| 炭化ケイ素（SiC）パワーデバイスの世界市場規模、シェア、成長分析、タイプ別、用途別-産業予測、2024～2031年 |
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出版日: 2024年03月18日
発行: SkyQuest
ページ情報: 英文 182 Pages
納期: 3～5営業日
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- 全表示
- 概要
- 目次
炭化ケイ素（SiC）パワーデバイスの世界市場規模は、2022年に23億米ドルと評価され、2023年の28億3,000万米ドルから2031年には149億3,000万米ドルに成長し、予測期間中（2024～2031年）のCAGRは23.10％で成長する展望です。
世界の炭化ケイ素（SiC）パワーデバイス市場は、エネルギー効率の高いソリューションに対する需要の高まり、電気自動車の急速な普及、再生可能エネルギー源の拡大、従来のシリコンベースのデバイスに対する優位性、産業用途の増加、技術の進歩など、いくつかの要因によって大きな成長を遂げています。世界的にエネルギー保全が重視され、二酸化炭素排出量の削減が急務となる中、高効率を実現するパワーデバイスへの需要が高まっています。SiCパワーデバイスは、伝導損失とスイッチング損失を低減し、高い周波数と温度での動作を可能にすることで、エネルギー効率を高めています。さらに、自動車セグメントでは、環境意識と政府の義務化によって電気自動車への移行が進んでいます。SiCパワーデバイスは、より高い電圧と温度に対応できるため、特に電気自動車アプリケーションに適しており、電力変換効率の向上と走行距離の延長をもたらします。さらに、SiCパワーデバイスは、より高い降伏電圧、より速いスイッチング速度、優れた熱伝導性によって、従来のシリコンベースの同等品よりも優れており、電力密度の向上、システムサイズの縮小、多様な用途にわたる性能の強化につながります。さらに、洗練された結晶成長技術やウエハスケール生産を含むSiCパワーデバイス製造プロセスの継続的な進歩は、製造コストの低下を促し、SiCパワーデバイスをより経済的に実行可能なものとし、様々な産業での幅広い採用を促進しています。
目次
エグゼクティブサマリー
- 市場概要
- 繁栄と衰退
調査手法
- 情報調達
- セカンダリとプライマリデータソース
- 市場規模の推定
- 市場の前提条件と制限
親市場の分析
- 市場概要
- 市場規模
- 市場力学
- 促進要因
- 機会
- 抑制要因
- 課題
主要市場の考察
- 技術分析
- 価格分析
- サプライチェーン分析
- バリューチェーン分析
- 市場のエコシステム
- IP分析
- 貿易分析
- スタートアップ分析
- 原材料の分析
- イノベーションマトリクス
- パイプライン製品の分析
- マクロ経済指標
- 主要投資の分析
- 主要成功要因
- 競合の程度
市場力学と展望
- 市場力学
- 促進要因
- 機会
- 抑制要因
- 課題
- 規制情勢
- ポーターの分析
- 将来の混乱についての特別な考察
炭化ケイ素（SiC）パワーデバイスの世界市場：タイプ別
- 市場概要
- SiCパワーモジュールとSiCパワーダイオード
炭化ケイ素（SiC）パワーデバイスの世界市場：用途別
- 市場概要
- 電源
- インバータ
炭化ケイ素（SiC）パワーデバイスの世界市場規模：地域別
- 市場概要
- 北米
- 米国
- カナダ
- 欧州
- ドイツ
- スペイン
- フランス
- 英国
- その他の欧州地域
- アジア太平洋
- 中国
- インド
- 日本
- 韓国
- その他のアジア太平洋
- ラテンアメリカ
- ブラジル
- その他のラテンアメリカ地域
- 中東・アフリカ
- GCC諸国
- 南アフリカ
- その他中東・アフリカ地域
競合情勢
- 上位5社の比較
- 主要企業の市場ポジショニング（2021年）
- 主要市場企業が採用した戦略
- 主要成功戦略
- 市場における最近の活動
- 主要企業の市場シェア（2021年）
主要企業プロファイル
- Infineon Technologies AG（ドイツ）
- Cree, Inc.（米国）
- ROHM Co., Ltd.（日本）
- STMicroelectronics N.V.（スイス）
- ON Semiconductor Corporation（米国）
- Toshiba Corporation（日本）
- Mitsubishi Electric Corporation（日本）
- Renesas Electronics Corporation（日本）
- NXP Semiconductors N.V.（オランダ）
- Fuji Electric Co., Ltd.（日本）
- General Electric（米国）
- Wolfspeed, Inc.（米国）
- Littelfuse, Inc.（米国）
- United Silicon Carbide Inc.（米国）
- Microchip Technology Inc.（米国）
- Danfoss A/S（デンマーク）
- Analog Devices, Inc.（米国）
- Semikron International GmbH（ドイツ）
- GeneSiC Semiconductor Inc.（米国）
- Monolith Semiconductor Inc.（米国）
Global Silicon Carbide (SiC) Power Devices Market size was valued at USD 2.30 Billion in 2022 and is poised to grow from USD 2.83 Billion in 2023 to USD 14.93 Billion by 2031, growing at a CAGR of 23.10% during the forecast period (2024-2031).
The Global Silicon Carbide (SiC) Power Devices market is experiencing significant growth driven by several factors, including the escalating demand for energy-efficient solutions, the burgeoning adoption of electric vehicles, the expansion of renewable energy sources, advantages over traditional silicon-based devices, increasing industrial applications, and technological progress. With a heightened global emphasis on energy preservation and the imperative to reduce carbon emissions, the demand for power devices offering heightened efficiency is on the rise. SiC power devices boast reduced conduction and switching losses, enabling operation at elevated frequencies and temperatures, thereby enhancing energy efficiency. Furthermore, the automotive sector is witnessing a transition towards electric vehicles propelled by environmental consciousness and governmental mandates. SiC power devices are particularly well-suited for EV applications due to their capacity to manage higher voltages and temperatures, resulting in enhanced power conversion efficiency and extended driving ranges. Additionally, SiC power devices outshine traditional silicon-based counterparts with higher breakdown voltage, swifter switching speeds, and superior thermal conductivity, culminating in heightened power density, diminished system size, and enhanced performance across diverse applications. Furthermore, ongoing advancements in SiC power device manufacturing processes, encompassing refined crystal growth techniques and wafer-scale production, have precipitated a decline in manufacturing costs, rendering SiC power devices more economically viable and fostering broader adoption across various industries.
Top-down and bottom-up approaches were used to estimate and validate the size of the Global Silicon Carbide (SiC) Power Devices Market and to estimate the size of various other dependent submarkets. The research methodology used to estimate the market size includes the following details: The key players in the market were identified through secondary research, and their market shares in the respective regions were determined through primary and secondary research. This entire procedure includes the study of the annual and financial reports of the top market players and extensive interviews for key insights from industry leaders such as CEOs, VPs, directors, and marketing executives. All percentage shares split, and breakdowns were determined using secondary sources and verified through Primary sources. All possible parameters that affect the markets covered in this research study have been accounted for, viewed in extensive detail, verified through primary research, and analyzed to get the final quantitative and qualitative data.
Global Silicon Carbide (SiC) Power Devices Market Segmental Analysis
Global Silicon Carbide (SiC) Power Devices market is segmented by type, application, and region. Based on type, the market can be segmented into SiC Power Module, and SiC Power Diode. Based on application, the market is segmented into power supplies, and inverters. Based on region, the market is segmented into North America, Europe, Asia Pacific, Middle East and Africa, and Latin America.
Drivers of the Global Silicon Carbide (SiC) Power Devices Market
The burgeoning global Silicon Carbide (SiC) Power Devices market is propelled by the escalating need for energy-efficient power electronics, fueled by various industries such as automotive, aerospace, and industrial sectors. SiC power devices offer myriad advantages over conventional silicon-based counterparts, such as enhanced efficiency, swifter switching speeds, and increased operating temperatures. Additionally, governmental efforts aimed at curbing carbon emissions and advocating for renewable energy sources serve as further catalysts, bolstering the adoption of SiC power devices.
Restraints in the Global Silicon Carbide (SiC) Power Devices Market
One significant barrier hindering the expansion of the global Silicon Carbide (SiC) Power Devices market is the considerable expense associated with SiC power devices in contrast to conventional silicon-based counterparts. This elevated cost primarily stems from the intricate manufacturing procedures necessary for SiC material production and the restricted availability of SiC wafer suppliers. Consequently, the utilization of SiC power devices remains confined to upscale applications necessitating superior efficiency and rapid switching capabilities. While the current high cost of SiC power devices is projected to impede market progression momentarily, it is anticipated to diminish gradually as the market evolves.
Market Trends of the Global Silicon Carbide (SiC) Power Devices Market
The primary trend driving the global Silicon Carbide (SiC) Power Devices market is the rising utilization of SiC-based power electronics within electric vehicles (EVs). SiC power devices present numerous benefits compared to conventional silicon-based alternatives, such as enhanced efficiency and quicker switching speeds, rendering them well-suited for EV power systems. With the increasing global uptake of EVs, there is anticipated substantial growth in demand for SiC-based power electronics in the automotive sector. This surge is poised to propel the expansion of the SiC power devices market in the foreseeable future.
Table of Contents
Executive Summary
- Market Overview
- Wheel of Fortune
Research Methodology
- Information Procurement
- Secondary & Primary Data Sources
- Market Size Estimation
- Market Assumptions & Limitations
Parent Market Analysis
- Market Overview
- Market Size
- Market Dynamics
- Drivers
- Opportunities
- Restraints
- Challenges
Key Market Insights
- Technology Analysis
- Pricing Analysis
- Supply Chain Analysis
- Value Chain Analysis
- Ecosystem of the Market
- IP Analysis
- Trade Analysis
- Startup Analysis
- Raw Material Analysis
- Innovation Matrix
- Pipeline Product Analysis
- Macroeconomic Indicators
- Top Investment Analysis
- Key Success Factor
- Degree of Competition
Market Dynamics & Outlook
- Market Dynamics
- Drivers
- Opportunities
- Restraints
- Challenges
- Regulatory Landscape
- Porters Analysis
- Competitive rivalry
- Threat of Substitute Products
- Bargaining Power of Buyers
- Threat of New Entrants
- Bargaining Power of Suppliers
- Skyquest Special Insights on Future Disruptions
- Political Impact
- Economic Impact
- Social Impact
- Technical Impact
- Environmental Impact
- Legal Impact
Global Silicon Carbide (SiC) Power Devices Market by Type
- Market Overview
- SiC Power Module and SiC Power Diode
Global Silicon Carbide (SiC) Power Devices Market by Application
- Market Overview
- Power Supplies
- and Inverters
Global Silicon Carbide (SiC) Power Devices Market Size by Region
- Market Overview
- North America
- USA
- Canada
- Europe
- Germany
- Spain
- France
- UK
- Rest of Europe
- Asia Pacific
- China
- India
- Japan
- South Korea
- Rest of Asia-Pacific
- Latin America
- Brazil
- Rest of Latin America
- Middle East & Africa (MEA)
- GCC Countries
- South Africa
- Rest of MEA
Competitive Landscape
- Top 5 Player Comparison
- Market Positioning of Key Players, 2021
- Strategies Adopted by Key Market Players
- Top Winning Strategies
- By Development
- By Company
- By Year
- Recent Activities in the Market
- Key Companies Market Share (%), 2021
Key Company Profiles
- Infineon Technologies AG (Germany)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Cree, Inc. (US)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- ROHM Co., Ltd. (Japan)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- STMicroelectronics N.V. (Switzerland)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- ON Semiconductor Corporation (US)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Toshiba Corporation (Japan)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Mitsubishi Electric Corporation (Japan)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Renesas Electronics Corporation (Japan)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- NXP Semiconductors N.V. (Netherlands)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Fuji Electric Co., Ltd. (Japan)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- General Electric (US)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Wolfspeed, Inc. (US)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Littelfuse, Inc. (US)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- United Silicon Carbide Inc. (US)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Microchip Technology Inc. (US)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Danfoss A/S (Denmark)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Analog Devices, Inc. (US)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Semikron International GmbH (Germany)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- GeneSiC Semiconductor Inc. (US)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Monolith Semiconductor Inc. (US)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
