窒化ガリウム (GaN) 半導体デバイスの世界市場 2023年：パワードライブ、サプライ & インバーター、RF、照明 & レーザー
Gallium Nitride Semiconductor Device Market by Device Type (Opto, Power, RF), Wafer Size, Application (Power Drives, Supply and Inverter, RF, Lighting and Laser), Vertical (Telecommunication, Consumer, Automotive), Geography - Global Forecast to 2023
|出版日||ページ情報||英文 181 Pages
|窒化ガリウム (GaN) 半導体デバイスの世界市場 2023年：パワードライブ、サプライ & インバーター、RF、照明 & レーザー Gallium Nitride Semiconductor Device Market by Device Type (Opto, Power, RF), Wafer Size, Application (Power Drives, Supply and Inverter, RF, Lighting and Laser), Vertical (Telecommunication, Consumer, Automotive), Geography - Global Forecast to 2023|
|出版日: 2017年11月01日||ページ情報: 英文 181 Pages||
世界の窒化ガリウム (GaN) 半導体デバイス市場規模は、2017年から2023年にかけて4.6%のCAGR (年間複合成長率) で拡大し、2023年までに224億7,000万米ドルに達すると予測されています。同市場の成長を促進する主な要因は、消費者エレクトロニクスおよび自動車における窒化ガリウムの広範なアドレッサブル市場、革新的なアプリケーションを促進する窒化ガリウム材料のワイドギャップ特性、RFパワーエレクトロニクスにおける窒化ガリウムの成功、および軍事・防衛・航空宇宙アプリケーションにおける窒化ガリウムRF半導体デバイスの導入拡大です。しかし、高電圧パワー半導体デバイスにおける炭化ケイ素の存在は、全体的な窒化ガリウム半導体デバイス市場を抑制する可能性があります。
当レポートでは、世界における窒化ガリウム (GaN) 半導体デバイス市場の現状と見通しを調査分析し、デバイス種類・ウェハーサイズ・用途・垂直産業・地域/主要国別の市場分析と予測、市場影響因子の分析、競合環境、主要企業のプロファイルなどをまとめ、お届けいたします。
"The global gallium nitride semiconductor device market is expected to grow at a CAGR of 4.6% between 2017 and 2023"
The gallium nitride semiconductor device market is expected to be worth USD 22.47 billion by 2023, growing at a CAGR of 4.6% between 2017 and 2023. The major factors driving the growth of the gallium nitride semiconductor device industry include the vast addressable market for gallium nitride in consumer electronics and automotive, wide bandgap property of gallium nitride material encouraging innovative applications, success of gallium nitride in RF power electronics, and increasing adoption of gallium nitride RF semiconductor device in military, defense and aerospace application. However, the preference of silicon carbide in high-voltage power semiconductor devices is expected to be a potential restraint for the overall gallium nitride semiconductor devices market. This is expected to limit the market growth over the next few years.
The global gallium nitride semiconductor device market for opto-semiconductor device type held the largest market share in 2016. This is attributed its wide application in consumer and enterprise, industrial, and automotive industry. Gallium nitride light-emitting diodes (LEDs) are widely used in laptop and notebook display, mobile display, projectors, televisions and monitor, signs and large displays, etc. The use of gallium nitride-based LEDs for the interior and exterior lightings such as headlights and signal lights, car interior lighting, fog lights, stop lights, and dome lights in the automotive industry has also contributed to the larger market size.
The market for gallium nitride-based power drives is expected to grow significantly during the forecast period attributed to its superior features such as minimum power loss, high-speed switching miniaturization, and high breakdown voltage as compared with the silicon-based power devices. Also, the large total addressable market such as power distribution systems, industrial systems, heavy electrical systems, turbines, heavy machinery, advanced industrial control systems, and electromechanical computing/computer systems; and is also inclusive of several new power applications (clean-tech) such as high-voltage direct current (HVDC), smart grid power systems, wind turbines, wind power systems, solar power systems, and electric and hybrid electric vehicles are among the prime reasons for its faster growth.
APAC is expected to hold the largest share of the gallium nitride semiconductor device market during the forecast period. This is attributed to the increasing demand for LEDs in various industries such as consumer and enterprise, industrial, and automotive. Further, EV charging, and electric vehicle production markets, and increasing renewable energy generation are driving the market in APAC.
The report includes the competitive landscape of the market for prominent players including Cree (US), Samsung (South Korea), Infineon (Germany), Qorvo (US), MACOM (US), Microsemi Corporation (US), Analog Devices (US), Mitsubishi Electric (Japan), Efficient Power Conversion (US), GaN Systems (Canada), Exagan (France) , VisIC Technologies (Israel), Integra Technologies (US), Transphorm (US), Navitas Semiconductor (US), Nichia (Japan), Panasonic (Japan), Texas Instruments (US), Ampleon (Netherlands), Sumitomo Electric (Japan), Northrop Grumman Corporation (US), Dialog Semiconductor (UK), and Epistar (Taiwan).
This research report categorizes the global gallium nitride semiconductor device market on the basis of product, frequency band, license type, application, component, and geography. The report discusses the major drivers, restraints, challenges, and opportunities pertaining to the market; value chain analysis; and market ranking analysis.
The report would help leaders/new entrants in this market in the following ways:
*Details on Business overview, Products Offered, Strength of Product Portfolio, Business Strategy Excellence, Recent Developments, Key relationships might not be captured in case of unlisted companies.