自動車用SiCパワー半導体の世界市場

度重なるパンデミックの発生、経済不安、投資・取引の減少、地政学的要因によるサプライチェーンの混乱などの課題を抱えながらも、2022年に向けて第3世代半導体産業は盛り上がりを見せ始めています。パワーデバイスに使用されるSiC（シリコンカーバイド）材料は、ネットゼロ炭素排出の達成やグリーンエネルギーへの移行に向けた世界の取り組みにより、市場の注目を浴びています。低消費電力と高性能を特徴とするSiCデバイスは、家電製品の性能を最大限に引き出す動向に伴い、今後、電気自動車に広く採用されることが予想されます。

当レポートでは、世界の自動車用SiCパワー半導体市場について調査し、市場の概要と業界動向、そして世界のSiCデバイスメーカー上位5社（STマイクロエレクトロニクス、インフィニオン、ウォルフスピード、ローム、オンセミ）の開発動向をまとめています。

目次

第1章 世界の車載用SiCパワー半導体市場の発展

• 世界のネットゼロ炭素排出への取り組みが電気自動車の開発を推進
• xEv開発別パワーコンポーネントの使用量と価値の大幅な増加
• SiCの出現により、従来のSiベースの半導体材料の限界が補われる
• 800V+SiC仕様が電気自動車の主流になる
• 電気自動車の需要拡大によりSiCパワー半導体の世界市場需要が拡大

第2章 世界のSiCパワー半導体産業の発展

• 世界のSiCパワー半導体産業は市場集中度が高い
• SiCパワー半導体業界の主要なボトルネックとしての上流基板とエピタキシー
• 世界トップ5のSiCデバイスサプライヤーの開発動向
• 大規模生産、8インチ生産、社内製造、戦略的提携が業界の主要動向
  • 大規模生産：SiC需要の増加に伴うメーカーの主な目標としての生産能力の拡大

第2章 4.2

• 8インチ生産：大手メーカーは量産化に向けて基板技術の最適化に努める

第2章 4.3

• 内製化：世界のSiC業界では垂直統合が開発トレンドの主流になる可能性が高い
  • 戦略的提携：SiC産業チェーンにおける自動車メーカーの影響力が増大
• 政府の政策がSiC産業の発展の重要な推進力となる
  • 米国：SiC産業の発展を軍事部門と防衛部門に依存
  • 欧州：伝統的な自動車産業の需要を活用し、地域統合プロジェクトを実施
  • 中国：軍民統合政策を通じて国家レベルでのIDM専門化を推進

第3章 今後の見通し

付録

• 企業一覧

Companies covered

• Audi
• BorgWarner
• BYD Auto
• Coherent
• Denso
• Epiworld International
• Ford
• Foxconn
• Geely Auto
• Global Power Technology
• GM
• GT Advanced
• Hestia Power
• Hong Young Semiconductor
• Hyundai
• Infineon
• Jaguar Land Rover Auto
• Lucid Group
• Macronix
• Mercedes-Benz
• Mitsubishi
• NIO Inc.
• Nissan
• Norstel AB
• Onsemi
• Porsche
• Renault
• Resonac
• Sanan Opto
• Semikron
• Sicc Co.
• SiCrystal
• Siltectra
• SK Siltron
• Soitec
• Stellantis N.V.
• STMicroelectronics
• TanKeBlue Semiconductor
• Tesla
• Tianyu Semiconductor
• Toyota
• Vitesco Technologies
• Wolfspeed
• XPeng Auto
• ZF Group
• Zhanxin Electronic

The third-generation semiconductor industry has begun to gain momentum in 2022, despite challenges such as repeated outbreaks of the pandemic, economic instability, reduced investment and trades, and supply chain disruptions caused by geopolitical factors. SiC (Silicon Carbide) materials used in power devices have been grabbing market attention due to global efforts to achieve net-zero carbon emissions and the transition to green energy. Components associated with these semiconductors are rapidly moving from research and development to mass production. As EV (Electronic Vehicles) industry continues to boom, the demand for electric vehicle performance is also increasing. SiC devices characterized by low energy consumption and high performance are expected to be widely adopted in electric vehicles in the future, in line with the trends towards maximizing the performance of consumer electronics. The development of the third-generation semiconductor industry, represented by SiC, is thus likely to become a global trend. This report provides an overview of the global automotive SiC power semiconductor market and industry development and examines the key trends in the development of the global top-five SiC device suppliers, including STMicroelectronics, Infineon, Wolfspeed, Rohm, and Onsemi.

Table of Contents

1.Development of the Global Automotive SiC Power Semiconductor Market

• 1.1 Global Net-zero Carbon Emission Initiatives Drive the Development of Electric Vehicles
• 1.2 Significant Increases in Usage and Value of Power Components under xEv Development
• 1.3 The Emergence of SiC Compensates for Limitations of Traditional Si-based Semiconductor Materials
• 1.4 800V+SiC Specifications Becomes the Mainstream Trend in Electric Vehicle
• 1.5 The Expansion of Electric Vehicle Demand to Boost Global Market Demand for SiC Power Semiconductors

2.Development of the Global SiC Power Semiconductor Industry

• 2.1 Global SiC Power Semiconductor Industry Has High Market Concentration
• 2.2 Upstream Substrates and Epitaxy as Major Bottlenecks in the SiC Power Semiconductor Industry
• 2.3 Trends in the Development of the World’s Top Five SiC Device Suppliers
• 2.4 Large-scale Production, 8-inch Production, In-house Manufacturing, and Strategic Alliances are Key Industry Trends
  • 2.4.1 Large-scale Production: Expanding Production Capacity as the Primary Goal for Manufacturers amid Increased SiC Demand

2.4.2

• 8-inch Production: Leading Manufacturers Strive to Optimize Substrate Technology to Achieve Mass Production

2.4.3

• In-house Manufacturing: Vertical Integration Likely to Become the Mainstream Development Trend in the Global SiC Industry
• 2.4.4 Strategic Alliances: Carmakers' Influence in the SiC Industry Chain Increases
• 2.5 Government Policies are a Key Driver for the Development of the SiC Industry
  • 2.5.1 The US: Relies on the Military and Defense Sectors to Drive SiC Industry Development
  • 2.5.2 Europe: Leverages Demand from the Traditional Automotive Industry and Implements Regional Integration Projects
  • 2.5.3 China: Promoting National-level IDM Specialization at National Level through the Military-Civil Integration Policy

3.MIC Perspective

Appendix

• List of Companies

List of Tables

• Table 1: Physical Performance Differences between Traditional Si Semiconductors and Third-generation Semiconductors based on SiC
• Table 2: Main Reasons for Difficulties in SiC Substrate Production
• Table 3: Trends in the Development of Major SiC Power Semiconductor Manufacturers Worldwide
• Table 4: Strategic Alliances of Major SiC Device Suppliers

List of Figures

• Figure 1: Net-zero Carbon Emission Targets of Major Countries Worldwide
• Figure 2: Timeline of Carmakers Introducing SiC MOSFETs in their Vehicles
• Figure 3: Global SiC Power Device Market Forecast by Application, 2019 - 2025
• Figure 4: Global Market Share of SiC Substrates (Left) and SiC Power Devices (Right)
• Figure 3: SiC Wafer Manufacturing Process and Production Cost Breakdown
• Figure 4: Vertical Integration and Substrate Supply of Key SiC Manufacturers Worldwide