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GAAFETテクノロジーの世界市場

GAAFET Technology

出版日
ページ情報
英文 145 Pages
納期
即日から翌営業日
適宜更新あり
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価格表記: USDを日本円(税抜)に換算
本日の銀行送金レート: 1USD=147.66円
GAAFETテクノロジーの世界市場
出版日: 2025年06月30日
発行: Global Industry Analysts, Inc.
ページ情報: 英文 145 Pages
納期: 即日から翌営業日
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概要

GAAFETテクノロジーの世界市場は2030年までに3億2,750万米ドルに達する見込み

2024年に7,300万米ドルと推定されるGAAFETテクノロジーの世界市場は、2030年には3億2,750万米ドルに達し、分析期間2024-2030年のCAGRは28.4%で成長すると予測されます。同レポートで分析されているセグメントの1つであるナノワイヤは、CAGR 27.6％を記録し、分析期間終了時には1億1,830万米ドルに達すると予測されています。ナノシートセグメントの成長率は、分析期間でCAGR 30.6％と推定されます。

米国市場は1,920万米ドルと推定、中国はCAGR27.0％で成長予測

米国のGAAFETテクノロジー市場は、2024年には1,920万米ドルと推定されます。世界第2位の経済大国である中国は、2030年までに4,960万米ドルの市場規模に達すると予測され、分析期間2024-2030年のCAGRは27.0%です。その他の注目すべき地域別市場としては、日本とカナダがあり、分析期間中のCAGRはそれぞれ25.8％と24.7％と予測されています。欧州では、ドイツがCAGR約19.8%で成長すると予測されています。

世界のGAAFETテクノロジー市場- 主要動向と促進要因のまとめ

GAAFETテクノロジーが半導体イノベーションの新時代を告げる理由とは？

ゲート全周囲電界効果トランジスタ（GAAFET）技術は、半導体アーキテクチャの革新的な進歩であり、FinFET（Fin Field-Effect Transistor）構造から、よりスケーラブルで電力効率に優れ、性能最適化されたトランジスタ設計への重要な進化を意味します。半導体ノードが5nmを越えて3nmや2nmの領域に縮小するにつれ、従来のFinFET設計は、短チャネル効果、リーク電流、静電インテグリティの制御において大きな限界に直面しています。GAAFETは、トランジスタ・チャネルをゲートで完全に取り囲むことでこれらの課題を克服し、電流の流れを優れた方法で制御し、より厳しいスイッチング特性を可能にします。この強化された静電制御により、消費電力が大幅に削減され、駆動電流が改善されるため、GAAFETは、高度なコンピューティング、モバイル・プロセッサ、人工知能（AI）ワークロードにおける高性能かつ低消費電力のアプリケーションに最適です。FinFETとは異なり、ナノシートやナノワイヤなどのGAAFET構造は、チャネルの幅を変えることで異なる性能目標に合わせて精密に調整することができます。サムスン、インテル、TSMCなどの大手半導体メーカーは、GAAFETの開発と次世代チップ設計への統合に積極的に投資しています。ムーアの法則が減速し、トランジスタのスケーリングがより複雑化する中、GAAFETテクノロジーは将来のチップ性能の要として台頭し、データ主導の世界における継続的なイノベーションを可能にしています。

最終用途はどのようにGAAFETテクノロジーの採用とカスタマイズを推進していますか？

GAAFETテクノロジーの採用は、パフォーマンスクリティカルで消費電力に敏感な最終用途に幅広く適用できることから、急速に加速しています。コンシューマーエレクトロニクス分野では、次世代スマートフォン、ラップトップ、ウェアラブルは、バッテリー寿命を節約しながら高速コンピューティングを実現するチップセットを必要としています。膨大な並列処理と高速データ・スループットが要求されるAIや機械学習（ML）のワークロードでは、GAAFETベースのロジックにより、より高いトランジスタ密度と低レイテンシが可能になり、リアルタイムの推論やモデルのトレーニングに不可欠です。ワットあたりの性能が重要な指標となるデータセンターでは、GAAFETは、運用コストやカーボンフットプリントを比例して増加させることなく、クラウド・コンピューティングの成長を維持するために必要なエネルギーの節約を実現します。自動車エレクトロニクス、特に自律走行車やADAS（先進運転支援システム）においても、複雑な車載意思決定システムをサポートするGAAFETの信頼性と高周波動作の恩恵を受けています。さらに、モノのインターネット（IoT）やエッジ・コンピューティング環境では、デバイスが最小限のエネルギー消費と計算の俊敏性のバランスを取る必要がありますが、GAAFETは超小型で高効率のSoC（システム・オン・チップ）を可能にします。アプリケーションの多様性と要求が高まる中、GAAFETは、超低消費電力センサーからハイエンド・プロセッサーまで、複数の性能層に対応するために必要なスケーラビリティとコンフィギュラビリティを提供し、デバイスのインテリジェンスと統合の新時代を押し進めます。

GAAFETアーキテクチャの開発と統合を支える技術革新とは？

GAAFETテクノロジーの実装は、材料工学、リソグラフィ、デバイス製造技術における革新の波によって推進されています。これらはすべて、ナノスケールのトランジスタ設計の課題を克服するために不可欠なものです。GAAFETの特徴の1つは、積層ナノシートまたはナノワイヤを使用することであり、成膜およびエッチング工程では原子レベルの精度が要求されます。先進的な極端紫外線（EUV）リソグラフィは、サブナノメートルの精度でこれらの構造をパターニングする上で極めて重要な役割を果たし、メーカーが3nm以下のノードでも高い歩留まりを達成することを可能にしています。原子層堆積法（ALD）と選択的エッチング技術も、GAAFETの性能を決定づける極薄チャネルとコンフォーマルゲート構造の形成に不可欠です。high-k誘電体、シリコン-ゲルマニウム（SiGe）、新しい金属ゲートスタックなどの材料は、移動度を高め、寄生容量を減らし、長時間の使用に耐える信頼性を維持するために最適化されています。チップレットアーキテクチャやシリコン貫通ビア（TSV）を含む3D集積技術は、システムレベルのパッケージでGAAFETベースの設計を補完するために共同開発されています。さらに、計算モデリング、AI支援設計自動化、電子設計自動化（EDA）ツールにより、さまざまな電気的・熱的条件下でのGAAFETトランジスタの精密なシミュレーションとレイアウトが可能になっています。III-V族半導体やグラフェン、MoS2などの2D材料を含む新しいチャネル材料の調査は、GAAFETの将来的な機能拡張を示唆しています。これらの技術により、GAAFETは3nm以下のノードで実現可能であるだけでなく、チップ製造のオングストローム時代に向けて長期的に進化する態勢が整っています。

GAAFETテクノロジーの世界の普及を促進する市場力学とは？

GAAFETテクノロジー市場の成長は、FinFETからより高度なトランジスタアーキテクチャへの移行を後押しする市場圧力、地政学的変化、業界ロードマップ、競合力学の合流によって促進されています。最も大きな原動力のひとつは、トランジスタ数と電力効率の向上が従来の手段では達成困難なポスト・ムーアの法則の時代に、半導体業界が性能の微細化を継続する必要性に迫られていることです。GAAFETの優れたスケーラビリティとエネルギー効率は、この目標に完全に合致しており、シリコンの進化における次の論理的ステップとなっています。チップメーカーが、より小さく、より高速で、より消費電力に配慮したチップを提供しなければならないというプレッシャーに直面する中、GAAFETは最先端ノードの要求を満たすタイムリーなソリューションを提供します。一方、サプライチェーンの混乱と地政学的緊張によって悪化した技術主権を求める世界の動きは、国や企業に国内の半導体研究開発および鋳造能力への多額の投資を促しており、GAAFETはこうした次世代ファブの中心に位置づけられることが多いです。インテル、サムスン、TSMCといった半導体大手間の競争企業間の敵対関係も、GAAFETベースの商用チップを最初に市場に投入することで技術的優位を得ようとする各社の動きを加速させています。AI、量子コンピューティング、5Gインフラ、ハイパフォーマンス・コンピューティング（HPC）への設備投資の増加は、GAAFETレベルの性能を大規模に求めるニーズを増幅させています。コスト、消費電力、性能が引き続き設計上の考慮事項を支配する中、GAAFETテクノロジーは先端ノード半導体の決定的なアーキテクチャとなり、業界をイノベーションと市場成長の新たな段階へと導きます。

セグメント

タイプ（ナノワイヤ、ナノシート、六方晶FET、ナノリングFET、ナノスラブFET）、最終用途（エネルギー＆パワー、コンシューマーエレクトロニクス、産業システム、自動車、その他の最終用途）

調査対象企業の例

  • ABB Group
  • Advanced Micro Devices, Inc.（AMD）
  • Applied Materials, Inc.
  • ASML Holding N.V.
  • Broadcom Inc.
  • Digi-Key Electronics
  • Fairchild Semiconductor
  • Gaafet Semiconductor Pvt Ltd
  • GlobalFoundries Inc.
  • IBM Corporation
  • Infineon Technologies AG
  • Intel Corporation
  • IXYS Corporation
  • Micron Technology, Inc.
  • NXP Semiconductors N.V.
  • Power Integrations, Inc.
  • Qualcomm Incorporated
  • Renesas Electronics Corporation
  • Samsung Electronics Co., Ltd.
  • STMicroelectronics N.V.
  • Taiwan Semiconductor Manufacturing Company（TSMC）

AIインテグレーション

当社は、有効な専門家コンテンツとAIツールにより、市場情報と競合情報を変革しています。

Global Industry Analystsは、LLMや業界固有のSLMを照会する一般的な規範に従う代わりに、ビデオ記録、ブログ、検索エンジン調査、膨大な量の企業、製品/サービス、市場データなど、世界中の専門家から収集したコンテンツのリポジトリを構築しました。

関税影響係数

Global Industry Analystsは、本社の国、製造拠点、輸出入（完成品とOEM）に基づく企業の競争力の変化を予測しています。この複雑で多面的な市場力学は、売上原価（COGS）の増加、収益性の低下、サプライチェーンの再構築など、ミクロおよびマクロの市場力学の中でも特に競合他社に影響を与える見込みです。

目次

第1章 調査手法

第2章 エグゼクティブサマリー

  • 市場概要
  • 主要企業
  • 市場動向と促進要因
  • 世界市場の見通し

第3章 市場分析

  • 米国
  • カナダ
  • 日本
  • 中国
  • 欧州
  • フランス
  • ドイツ
  • イタリア
  • 英国
  • その他欧州
  • アジア太平洋
  • その他の地域

第4章 競合

目次
Product Code: MCP35095

Global GAAFET Technology Market to Reach US$327.5 Million by 2030

The global market for GAAFET Technology estimated at US$73.0 Million in the year 2024, is expected to reach US$327.5 Million by 2030, growing at a CAGR of 28.4% over the analysis period 2024-2030. Nano Wires, one of the segments analyzed in the report, is expected to record a 27.6% CAGR and reach US$118.3 Million by the end of the analysis period. Growth in the Nano Sheets segment is estimated at 30.6% CAGR over the analysis period.

The U.S. Market is Estimated at US$19.2 Million While China is Forecast to Grow at 27.0% CAGR

The GAAFET Technology market in the U.S. is estimated at US$19.2 Million in the year 2024. China, the world's second largest economy, is forecast to reach a projected market size of US$49.6 Million by the year 2030 trailing a CAGR of 27.0% over the analysis period 2024-2030. Among the other noteworthy geographic markets are Japan and Canada, each forecast to grow at a CAGR of 25.8% and 24.7% respectively over the analysis period. Within Europe, Germany is forecast to grow at approximately 19.8% CAGR.

Global GAAFET Technology Market - Key Trends & Drivers Summarized

Why Is GAAFET Technology Heralding a New Era in Semiconductor Innovation?

Gate-All-Around Field-Effect Transistor (GAAFET) technology represents a transformative advancement in semiconductor architecture, marking a critical evolution from FinFET (Fin Field-Effect Transistor) structures to a more scalable, power-efficient, and performance-optimized transistor design. As semiconductor nodes shrink beyond 5nm into the 3nm and 2nm territory, traditional FinFET designs face significant limitations in controlling short-channel effects, leakage currents, and electrostatic integrity. GAAFET overcomes these challenges by completely surrounding the transistor channel with the gate, allowing for superior control over current flow and enabling tighter switching characteristics. This enhanced electrostatic control results in significantly reduced power consumption and improved drive current, making GAAFETs ideal for high-performance, low-power applications in advanced computing, mobile processors, and artificial intelligence (AI) workloads. Unlike FinFETs, GAAFET structures-such as nanosheets or nanowires-can be precisely tuned for different performance targets by varying the width of the channel, a flexibility that empowers foundries to offer multiple performance-power tradeoffs within a single process node. Leading semiconductor manufacturers like Samsung, Intel, and TSMC are aggressively investing in GAAFET development and integration into their next-generation chip designs. As Moore’s Law slows and transistor scaling becomes more complex, GAAFET technology is emerging as a cornerstone of future chip performance, enabling continued innovation in an increasingly data-driven world.

How Are End-Use Applications Driving Adoption and Customization of GAAFET Technology?

The adoption of GAAFET technology is being rapidly accelerated by its applicability across a wide spectrum of performance-critical and power-sensitive end-use applications. In the consumer electronics sector, next-generation smartphones, laptops, and wearables require chipsets that can deliver high-speed computing while conserving battery life-objectives that GAAFETs address with their superior power efficiency and thermal behavior. For AI and machine learning (ML) workloads, which demand vast parallel processing and fast data throughput, GAAFET-based logic enables higher transistor density and lower latency, critical for real-time inferencing and training models. In data centers, where performance per watt is a key metric, GAAFETs offer the energy savings necessary to sustain growth in cloud computing without proportionally increasing operational costs or carbon footprint. Automotive electronics, particularly in autonomous vehicles and advanced driver-assistance systems (ADAS), are also benefitting from the reliability and high-frequency operation of GAAFETs, which support complex onboard decision-making systems. Additionally, in the Internet of Things (IoT) and edge computing environments, where devices must balance minimal energy consumption with computational agility, GAAFETs allow for ultra-compact, high-efficiency SoCs (systems on chips). As applications grow more diverse and demanding, GAAFETs provide the scalability and configurability needed to serve multiple performance tiers-from ultra-low power sensors to high-end processors-ushering in a new era of device intelligence and integration.

What Technological Innovations Are Powering the Development and Integration of GAAFET Architectures?

The implementation of GAAFET technology is being propelled by a wave of innovations in materials engineering, lithography, and device fabrication techniques, all of which are essential for overcoming the challenges of nanoscale transistor design. One of the defining features of GAAFETs is their use of stacked nanosheets or nanowires, which require atomic-level precision during the deposition and etching processes. Advanced extreme ultraviolet (EUV) lithography plays a pivotal role in patterning these structures with sub-nanometer accuracy, enabling manufacturers to achieve high yields even at nodes below 3nm. Atomic layer deposition (ALD) and selective etching techniques are also critical in forming the ultra-thin channels and conformal gate structures that define GAAFET performance. Materials such as high-k dielectrics, silicon-germanium (SiGe), and new metal gate stacks are being optimized to enhance mobility, reduce parasitic capacitance, and maintain reliability over extended use. 3D integration techniques, including chiplet architectures and through-silicon vias (TSVs), are being co-developed to complement GAAFET-based designs in system-level packages. Furthermore, computational modeling, AI-assisted design automation, and electronic design automation (EDA) tools are enabling precise simulation and layout of GAAFET transistors under varied electrical and thermal conditions. Research into new channel materials, including III-V semiconductors and 2D materials like graphene and MoS2, hints at the future expansion of GAAFET capabilities. These technology enablers are ensuring that GAAFETs are not only viable at sub-3nm nodes but also poised for long-term evolution well into the angstrom era of chipmaking.

What Market Dynamics Are Driving the Global Adoption of GAAFET Technology?

The growth of the GAAFET technology market is being fueled by a confluence of market pressures, geopolitical shifts, industry roadmaps, and competitive dynamics that collectively favor the transition from FinFETs to more advanced transistor architectures. One of the foremost drivers is the semiconductor industry’s need to continue performance scaling in the post-Moore’s Law era, where gains in transistor count and power efficiency are harder to achieve through conventional means. GAAFET’s superior scalability and energy efficiency align perfectly with this goal, making it the next logical step in silicon evolution. As chipmakers face increasing pressure to deliver smaller, faster, and more power-conscious chips, GAAFET offers a timely solution that meets the demands of leading-edge nodes. Meanwhile, the global push for technological sovereignty-exacerbated by supply chain disruptions and geopolitical tensions-is prompting nations and corporations to invest heavily in domestic semiconductor R&D and foundry capabilities, with GAAFET often positioned at the heart of these next-generation fabs. Competitive rivalry among semiconductor giants like Intel, Samsung, and TSMC is also driving accelerated adoption, with each aiming to gain a technological edge by bringing commercial GAAFET-based chips to market first. Rising capital investment in AI, quantum computing, 5G infrastructure, and high-performance computing (HPC) is amplifying the need for GAAFET-level performance at scale. As cost, power, and performance continue to dominate design considerations, GAAFET technology is set to become the defining architecture of advanced node semiconductors, guiding the industry into a new phase of innovation and market growth.

SCOPE OF STUDY:

The report analyzes the GAAFET Technology market in terms of units by the following Segments, and Geographic Regions/Countries:

Segments:

Type (Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs, Nanoslab FETs); End-Use (Energy & Power, Consumer Electronics, Industrial Systems, Automotive, Other End-Uses)

Geographic Regions/Countries:

World; United States; Canada; Japan; China; Europe (France; Germany; Italy; United Kingdom; and Rest of Europe); Asia-Pacific; Rest of World.

Select Competitors (Total 37 Featured) -

  • ABB Group
  • Advanced Micro Devices, Inc. (AMD)
  • Applied Materials, Inc.
  • ASML Holding N.V.
  • Broadcom Inc.
  • Digi-Key Electronics
  • Fairchild Semiconductor
  • Gaafet Semiconductor Pvt Ltd
  • GlobalFoundries Inc.
  • IBM Corporation
  • Infineon Technologies AG
  • Intel Corporation
  • IXYS Corporation
  • Micron Technology, Inc.
  • NXP Semiconductors N.V.
  • Power Integrations, Inc.
  • Qualcomm Incorporated
  • Renesas Electronics Corporation
  • Samsung Electronics Co., Ltd.
  • STMicroelectronics N.V.
  • Taiwan Semiconductor Manufacturing Company (TSMC)

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TARIFF IMPACT FACTOR

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TABLE OF CONTENTS

I. METHODOLOGY

II. EXECUTIVE SUMMARY

  • 1. MARKET OVERVIEW
    • Influencer Market Insights
    • World Market Trajectories
    • Tariff Impact on Global Supply Chain Patterns
    • GAAFET Technology - Global Key Competitors Percentage Market Share in 2025 (E)
    • Competitive Market Presence - Strong/Active/Niche/Trivial for Players Worldwide in 2025 (E)
  • 2. FOCUS ON SELECT PLAYERS
  • 3. MARKET TRENDS & DRIVERS
    • Post-FinFET Scaling Challenges Throw the Spotlight on GAAFET as the Next Evolution in Transistor Design
    • Push for Continued Moore's Law Progression Propels Development of Gate-All-Around Architectures
    • OEM Demand for Power Efficiency and High-Speed Switching Expands GAAFET Adoption in Leading-Edge Nodes
    • Advanced Node Roadmaps by TSMC, Samsung, and Intel Strengthen the Business Case for GAAFET Integration
    • AI and High-Performance Computing Needs Accelerate Transition to Nanosheet-Based Devices
    • Improved Short Channel Control and Reduced Leakage Drive Foundry Migration Toward GAAFET Structures
    • Growth in EUV Lithography Capabilities Enables Scalable Manufacturing of Complex GAAFET Geometries
    • OEM Process Design Kit (PDK) Alignment Supports EDA Toolchain Optimization for GAAFET Layouts
    • Rising Design Complexity Fuels Innovation in Process Co-Optimization and Device Architecture
    • Early Adoption in Mobile and Data Center Chips Drives First-Mover Advantage in GAAFET Foundries
    • Growth in Foundry-as-a-Service Models Enables Startup Access to Next-Gen GAAFET Technologies
  • 4. GLOBAL MARKET PERSPECTIVE
    • TABLE 1: World GAAFET Technology Market Analysis of Annual Sales in US$ for Years 2015 through 2030
    • TABLE 2: World Recent Past, Current & Future Analysis for GAAFET Technology by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ for Years 2024 through 2030 and % CAGR
    • TABLE 3: World 6-Year Perspective for GAAFET Technology by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets for Years 2025 & 2030
    • TABLE 4: World Recent Past, Current & Future Analysis for Nano Wires by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ for Years 2024 through 2030 and % CAGR
    • TABLE 5: World 6-Year Perspective for Nano Wires by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 6: World Recent Past, Current & Future Analysis for Nano Sheets by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ for Years 2024 through 2030 and % CAGR
    • TABLE 7: World 6-Year Perspective for Nano Sheets by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 8: World Recent Past, Current & Future Analysis for Hexagonal FETs by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ for Years 2024 through 2030 and % CAGR
    • TABLE 9: World 6-Year Perspective for Hexagonal FETs by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 10: World Recent Past, Current & Future Analysis for Nano-Ring FETs by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ for Years 2024 through 2030 and % CAGR
    • TABLE 11: World 6-Year Perspective for Nano-Ring FETs by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 12: World Recent Past, Current & Future Analysis for Nanoslab FETs by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ for Years 2024 through 2030 and % CAGR
    • TABLE 13: World 6-Year Perspective for Nanoslab FETs by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 14: World Recent Past, Current & Future Analysis for Other End-Uses by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ for Years 2024 through 2030 and % CAGR
    • TABLE 15: World 6-Year Perspective for Other End-Uses by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 16: World Recent Past, Current & Future Analysis for Energy & Power by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ for Years 2024 through 2030 and % CAGR
    • TABLE 17: World 6-Year Perspective for Energy & Power by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 18: World Recent Past, Current & Future Analysis for Consumer Electronics by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ for Years 2024 through 2030 and % CAGR
    • TABLE 19: World 6-Year Perspective for Consumer Electronics by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 20: World Recent Past, Current & Future Analysis for Industrial Systems by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ for Years 2024 through 2030 and % CAGR
    • TABLE 21: World 6-Year Perspective for Industrial Systems by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 22: World Recent Past, Current & Future Analysis for Automotive by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ for Years 2024 through 2030 and % CAGR
    • TABLE 23: World 6-Year Perspective for Automotive by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030

III. MARKET ANALYSIS

  • UNITED STATES
    • GAAFET Technology Market Presence - Strong/Active/Niche/Trivial - Key Competitors in the United States for 2025 (E)
    • TABLE 24: USA Recent Past, Current & Future Analysis for GAAFET Technology by Type - Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 25: USA 6-Year Perspective for GAAFET Technology by Type - Percentage Breakdown of Value Sales for Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs for the Years 2025 & 2030
    • TABLE 26: USA Recent Past, Current & Future Analysis for GAAFET Technology by End-Use - Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 27: USA 6-Year Perspective for GAAFET Technology by End-Use - Percentage Breakdown of Value Sales for Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive for the Years 2025 & 2030
  • CANADA
    • TABLE 28: Canada Recent Past, Current & Future Analysis for GAAFET Technology by Type - Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 29: Canada 6-Year Perspective for GAAFET Technology by Type - Percentage Breakdown of Value Sales for Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs for the Years 2025 & 2030
    • TABLE 30: Canada Recent Past, Current & Future Analysis for GAAFET Technology by End-Use - Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 31: Canada 6-Year Perspective for GAAFET Technology by End-Use - Percentage Breakdown of Value Sales for Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive for the Years 2025 & 2030
  • JAPAN
    • GAAFET Technology Market Presence - Strong/Active/Niche/Trivial - Key Competitors in Japan for 2025 (E)
    • TABLE 32: Japan Recent Past, Current & Future Analysis for GAAFET Technology by Type - Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 33: Japan 6-Year Perspective for GAAFET Technology by Type - Percentage Breakdown of Value Sales for Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs for the Years 2025 & 2030
    • TABLE 34: Japan Recent Past, Current & Future Analysis for GAAFET Technology by End-Use - Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 35: Japan 6-Year Perspective for GAAFET Technology by End-Use - Percentage Breakdown of Value Sales for Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive for the Years 2025 & 2030
  • CHINA
    • GAAFET Technology Market Presence - Strong/Active/Niche/Trivial - Key Competitors in China for 2025 (E)
    • TABLE 36: China Recent Past, Current & Future Analysis for GAAFET Technology by Type - Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 37: China 6-Year Perspective for GAAFET Technology by Type - Percentage Breakdown of Value Sales for Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs for the Years 2025 & 2030
    • TABLE 38: China Recent Past, Current & Future Analysis for GAAFET Technology by End-Use - Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 39: China 6-Year Perspective for GAAFET Technology by End-Use - Percentage Breakdown of Value Sales for Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive for the Years 2025 & 2030
  • EUROPE
    • GAAFET Technology Market Presence - Strong/Active/Niche/Trivial - Key Competitors in Europe for 2025 (E)
    • TABLE 40: Europe Recent Past, Current & Future Analysis for GAAFET Technology by Geographic Region - France, Germany, Italy, UK and Rest of Europe Markets - Independent Analysis of Annual Sales in US$ for Years 2024 through 2030 and % CAGR
    • TABLE 41: Europe 6-Year Perspective for GAAFET Technology by Geographic Region - Percentage Breakdown of Value Sales for France, Germany, Italy, UK and Rest of Europe Markets for Years 2025 & 2030
    • TABLE 42: Europe Recent Past, Current & Future Analysis for GAAFET Technology by Type - Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 43: Europe 6-Year Perspective for GAAFET Technology by Type - Percentage Breakdown of Value Sales for Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs for the Years 2025 & 2030
    • TABLE 44: Europe Recent Past, Current & Future Analysis for GAAFET Technology by End-Use - Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 45: Europe 6-Year Perspective for GAAFET Technology by End-Use - Percentage Breakdown of Value Sales for Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive for the Years 2025 & 2030
  • FRANCE
    • GAAFET Technology Market Presence - Strong/Active/Niche/Trivial - Key Competitors in France for 2025 (E)
    • TABLE 46: France Recent Past, Current & Future Analysis for GAAFET Technology by Type - Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 47: France 6-Year Perspective for GAAFET Technology by Type - Percentage Breakdown of Value Sales for Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs for the Years 2025 & 2030
    • TABLE 48: France Recent Past, Current & Future Analysis for GAAFET Technology by End-Use - Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 49: France 6-Year Perspective for GAAFET Technology by End-Use - Percentage Breakdown of Value Sales for Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive for the Years 2025 & 2030
  • GERMANY
    • GAAFET Technology Market Presence - Strong/Active/Niche/Trivial - Key Competitors in Germany for 2025 (E)
    • TABLE 50: Germany Recent Past, Current & Future Analysis for GAAFET Technology by Type - Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 51: Germany 6-Year Perspective for GAAFET Technology by Type - Percentage Breakdown of Value Sales for Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs for the Years 2025 & 2030
    • TABLE 52: Germany Recent Past, Current & Future Analysis for GAAFET Technology by End-Use - Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 53: Germany 6-Year Perspective for GAAFET Technology by End-Use - Percentage Breakdown of Value Sales for Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive for the Years 2025 & 2030
  • ITALY
    • TABLE 54: Italy Recent Past, Current & Future Analysis for GAAFET Technology by Type - Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 55: Italy 6-Year Perspective for GAAFET Technology by Type - Percentage Breakdown of Value Sales for Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs for the Years 2025 & 2030
    • TABLE 56: Italy Recent Past, Current & Future Analysis for GAAFET Technology by End-Use - Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 57: Italy 6-Year Perspective for GAAFET Technology by End-Use - Percentage Breakdown of Value Sales for Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive for the Years 2025 & 2030
  • UNITED KINGDOM
    • GAAFET Technology Market Presence - Strong/Active/Niche/Trivial - Key Competitors in the United Kingdom for 2025 (E)
    • TABLE 58: UK Recent Past, Current & Future Analysis for GAAFET Technology by Type - Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 59: UK 6-Year Perspective for GAAFET Technology by Type - Percentage Breakdown of Value Sales for Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs for the Years 2025 & 2030
    • TABLE 60: UK Recent Past, Current & Future Analysis for GAAFET Technology by End-Use - Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 61: UK 6-Year Perspective for GAAFET Technology by End-Use - Percentage Breakdown of Value Sales for Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive for the Years 2025 & 2030
  • REST OF EUROPE
    • TABLE 62: Rest of Europe Recent Past, Current & Future Analysis for GAAFET Technology by Type - Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 63: Rest of Europe 6-Year Perspective for GAAFET Technology by Type - Percentage Breakdown of Value Sales for Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs for the Years 2025 & 2030
    • TABLE 64: Rest of Europe Recent Past, Current & Future Analysis for GAAFET Technology by End-Use - Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 65: Rest of Europe 6-Year Perspective for GAAFET Technology by End-Use - Percentage Breakdown of Value Sales for Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive for the Years 2025 & 2030
  • ASIA-PACIFIC
    • GAAFET Technology Market Presence - Strong/Active/Niche/Trivial - Key Competitors in Asia-Pacific for 2025 (E)
    • TABLE 66: Asia-Pacific Recent Past, Current & Future Analysis for GAAFET Technology by Type - Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 67: Asia-Pacific 6-Year Perspective for GAAFET Technology by Type - Percentage Breakdown of Value Sales for Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs for the Years 2025 & 2030
    • TABLE 68: Asia-Pacific Recent Past, Current & Future Analysis for GAAFET Technology by End-Use - Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 69: Asia-Pacific 6-Year Perspective for GAAFET Technology by End-Use - Percentage Breakdown of Value Sales for Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive for the Years 2025 & 2030
  • REST OF WORLD
    • TABLE 70: Rest of World Recent Past, Current & Future Analysis for GAAFET Technology by Type - Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 71: Rest of World 6-Year Perspective for GAAFET Technology by Type - Percentage Breakdown of Value Sales for Nano Wires, Nano Sheets, Hexagonal FETs, Nano-Ring FETs and Nanoslab FETs for the Years 2025 & 2030
    • TABLE 72: Rest of World Recent Past, Current & Future Analysis for GAAFET Technology by End-Use - Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive - Independent Analysis of Annual Sales in US$ for the Years 2024 through 2030 and % CAGR
    • TABLE 73: Rest of World 6-Year Perspective for GAAFET Technology by End-Use - Percentage Breakdown of Value Sales for Other End-Uses, Energy & Power, Consumer Electronics, Industrial Systems and Automotive for the Years 2025 & 2030

IV. COMPETITION