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ガリウムヒ素（GaAs）RFデバイスの世界市場

Gallium Arsenide (GaAs) RF Devices

出版日
ページ情報
英文 155 Pages
納期
即日から翌営業日
適宜更新あり
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本日の銀行送金レート: 1USD=145.41円
ガリウムヒ素（GaAs）RFデバイスの世界市場
出版日: 2025年06月30日
発行: Global Industry Analysts, Inc.
ページ情報: 英文 155 Pages
納期: 即日から翌営業日
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概要

ガリウムヒ素（GaAs）RFデバイスの世界市場は2030年までに9億940万米ドルに達する見込み

2024年に5億9,560万米ドルと推定されるガリウムヒ素（GaAs）RFデバイスの世界市場は、2024年から2030年にかけてCAGR 7.3%で成長し、2030年には9億940万米ドルに達すると予測されます。本レポートで分析したセグメントの1つであるフィルタは、CAGR 7.7%を記録し、分析期間終了時には3億7,730万米ドルに達すると予測されています。パワーアンプ分野の成長率は、分析期間でCAGR 5.3％と推定されます。

米国市場は1億5,660万米ドル、中国はCAGR 7.1％で成長予測

米国のガリウムヒ素（GaAs）RFデバイス市場は、2024年に1億5,660万米ドルと推定されます。世界第2位の経済大国である中国は、2030年までに1億4,560万米ドルの市場規模に達すると予測され、分析期間2024-2030年のCAGRは7.1%です。その他の注目すべき地域別市場としては、日本とカナダがあり、分析期間中のCAGRはそれぞれ6.8％と6.1％と予測されています。欧州では、ドイツがCAGR 5.8%で成長すると予測されています。

世界のガリウムヒ素（GaAs）RFデバイス市場- 主要動向と促進要因のまとめ

なぜGaAs RFデバイスは現代の高周波通信に不可欠なのか？

ガリウムヒ素（GaAs）RFデバイスは、世界の通信インフラにおける基礎的なコンポーネントとして認知されつつあり、最新のワイヤレスシステムに要求される高周波、低ノイズ、高効率の性能を可能にしています。GaAsは、優れた電子移動度と直接的なバンドギャップを有しており、特に電力効率と信号忠実度が重要な無線周波数（RF）およびマイクロ波アプリケーションにおいて、シリコンを凌駕する性能を発揮します。これらの特性により、電力増幅器、低雑音増幅器、スイッチ、ミキサーなどのGaAs RFデバイスは、モバイル通信、航空宇宙・防衛、衛星通信、レーダーシステム、ワイヤレスブロードバンドなどの重要な分野に特に適しています。民生用電子機器では、スマートフォンが、バッテリ寿命を維持し、コンパクトなフォームファクタを維持しながら、マルチバンド4Gおよび5G接続をサポートするために、GaAs RFフロントエンドモジュールに大きく依存しています。また、GaAsデバイスは直線性と利得に優れているため、高データレートのアプリケーションに必要な高度な変調方式をサポートすることができます。世界が5G以降のミリ波周波数など、ますます高周波の周波数帯を使用する方向にシフトするにつれて、シリコンの限界がより明らかになり、先進的なRF回路設計におけるGaAsの関連性がさらに強固なものとなっています。デバイスやネットワーク全体で信頼性が高く、高スループットの無線通信がますます重視される中、GaAs RFデバイスは、高性能な接続性を実現する不可欠なイネーブラとして位置づけられています。

産業アプリケーションは、GaAs RFデバイスの成長と多様化をどのように促進しているか？

ワイヤレス対応アプリケーションの情勢は拡大しており、GaAs RFデバイスの採用は幅広い業界で推進されています。移動体通信では、GaAsパワーアンプとスイッチがユーザー機器と基地局の両方で広く使用され、6 GHz未満やmmWaveを含む複数の周波数帯で強力な信号送受信を実現しています。防衛および航空宇宙分野では、レーダー、電子戦、安全な通信システムにおいて、高出力、堅牢性、耐放射線性が不可欠なGaAs RF技術が長い間利用されてきました。衛星通信では、GaAs RF部品が中継器や端末に使用され、放送、ナビゲーション、世界・インターネット・サービス用の高周波リンクを提供しています。さらに、自動車業界では、V2X（Vehicle-to-Everything）通信やADAS（先進運転支援システム）などの新しいアプリケーションでGaAs RFデバイスの採用が進んでおり、そこでは信頼性の高い高周波性能が安全性と自律機能に不可欠です。産業用 IoT（IIoT）やスマートインフラも、スマートメーター、リモートセンシング、M2M（Machine-to-Machine）通信などのアプリケーションでGaAs RFデバイスの恩恵を受けています。このような多様な使用事例は、市場の需要を拡大するだけでなく、メーカーが独自の環境仕様や技術仕様に対応した、用途に特化したカスタムGaAs RFソリューションを開発することを後押ししています。

どのような技術革新がGaAs RFデバイスの性能と集積度を高めているのか？

材料工学、回路設計、および半導体プロセスにおけるブレークスルーは、GaAs RFデバイスの性能、統合、および製造可能性を大幅に向上させ、次世代通信システムのますます厳しくなる要求に応えることを可能にしています。有機金属化学気相成長法（MOCVD）や分子線エピタキシー法（MBE）などのエピタキシャル成長技術の向上により、HBT（ヘテロ接合バイポーラトランジスタ）やpHEMT（擬似高電子移動度トランジスタ）などの高効率トランジスタの製造に不可欠なドーピングプロファイルやヘテロ接合の形成を精密に制御した、より高純度のGaAsウエハーが製造できるようになっています。高度なリソグラフィとエッチング・プロセスにより、微細な形状と集積密度の向上が可能になり、コンパクトで高性能なモノリシック・マイクロ波集積回路（MMIC）が実現できるようになりました。GaAs基板を使用して製造されるこれらのMMICは、増幅、フィルタリング、スイッチングなどの複数のRF機能を1つのチップにまとめ、消費電力と物理的フットプリントを削減します。先進パッケージング技術やヒートスプレッディング技術などの熱管理における革新は、高出力・高温環境におけるGaAs RFデバイスの信頼性を向上させています。さらに、GaNやSiGeなどの相補的技術とのハイブリッド統合により、異なる材料の利点を組み合わせた多機能モジュールが実現し、より広い周波数帯域で性能を最適化できるようになっています。RFシミュレーションとレイアウト用に調整された電子設計自動化（EDA）ツールのサポートにより、エンジニアは現在、GaAs RF回路の設計、テスト、反復をより効率的に行えるようになり、最先端の無線システムの開発が加速しています。

GaAs RFデバイス産業の拡大を牽引する市場勢力とは？

世界のGaAs RFデバイス市場は、マクロ経済動向、技術的要請、進化する消費者の期待の融合によって力強い成長を遂げています。最も顕著な促進要因の1つは、5Gネットワークの急速な展開と高密度化であり、より広い帯域幅、低遅延、デバイス間通信の強化をサポートできる高周波かつ高効率のRFコンポーネントが求められています。ストリーミング、ゲーム、リアルタイム通信に後押しされたモバイルデータ消費の急増は、高性能RFハードウェアへの投資を通信事業者にさらなるプレッシャーを与えています。同時に、スマートホームから産業オートメーションに至るまで、IoTエコシステムの拡大が、GaAs部品が得意とする分野である小型で低消費電力のRFモジュールへの需要を高めています。特に米国、中国、韓国、EUにおいて、大手チップメーカーによる戦略的投資と、政府が支援する国内半導体能力強化のイニシアチブは、GaAs RFサプライチェーンをさらに活性化させています。電子機器の小型化・多機能化の動向も、性能とスペース・電力効率を両立させる統合RFソリューションの必要性を後押ししています。一方、半導体のサプライチェーンをめぐる地政学的な懸念が続いているため、国や企業は調達先を多様化し、垂直統合型のGaAs製造に投資するようになっています。6G、衛星インターネット、無人システム、防衛エレクトロニクスの分野で新たなアプリケーションが登場するにつれ、高性能RFソリューションに対する需要はますます高まるでしょう。GaAs RFデバイスは、高周波動作の技術的課題に対応する独自の能力を備えており、世界・コネクティビティの次の時代においても重要な技術の柱であり続けることができます。

セグメント

デバイス（フィルター、パワーアンプ、ローノイズアンプ、スイッチ、その他デバイス）、アプリケーション（コンシューマーデバイス、自動車、通信、航空宇宙・防衛、その他アプリケーション）

調査対象企業の例（注目の47社）

  • Analog Devices, Inc.
  • AXT Inc.
  • CEL（California Eastern Laboratories）
  • China Crystal Technologies
  • Coherent Corp.
  • Freiberger Compound Materials GmbH
  • Guerrilla RF
  • IQE PLC
  • MACOM Technology Solutions
  • Microchip Technology Inc.
  • Murata Manufacturing Co., Ltd.
  • NXP Semiconductors N.V.
  • ON Semiconductor Corporation
  • Qorvo, Inc.
  • RFHIC Corporation
  • Shenzhou Crystal Technology Co., Ltd.
  • Skyworks Solutions, Inc.
  • Sumitomo Electric Industries, Ltd.
  • United Monolithic Semiconductors S.A.S.
  • Xiamen Powerway Advanced Material Co., Ltd.

AIインテグレーション

私たちは、有効な専門家コンテンツとAIツールにより、市場情報と競合情報を変革しています。

Global Industry Analystsは、LLMや業界固有のSLMを照会する一般的な規範に従う代わりに、ビデオ記録、ブログ、検索エンジン調査、膨大な量の企業、製品/サービス、市場データなど、世界中の専門家から収集したコンテンツのリポジトリを構築しました。

関税影響係数

Global Industry Analystsは、本社の国、製造拠点、輸出入（完成品とOEM）に基づく企業の競争力の変化を予測しています。この複雑で多面的な市場力学は、売上原価（COGS）の増加、収益性の低下、サプライチェーンの再構築など、ミクロおよびマクロの市場力学の中でも特に競合他社に影響を与える見込みです。

目次

第1章 調査手法

第2章 エグゼクティブサマリー

  • 市場概要
  • 主要企業
  • 市場動向と促進要因
  • 世界市場の見通し

第3章 市場分析

  • 米国
  • カナダ
  • 日本
  • 中国
  • 欧州
  • フランス
  • ドイツ
  • イタリア
  • 英国
  • その他欧州
  • アジア太平洋
  • その他の地域

第4章 競合

目次
Product Code: MCP35099

Global Gallium Arsenide (GaAs) RF Devices Market to Reach US$909.4 Million by 2030

The global market for Gallium Arsenide (GaAs) RF Devices estimated at US$595.6 Million in the year 2024, is expected to reach US$909.4 Million by 2030, growing at a CAGR of 7.3% over the analysis period 2024-2030. Filters, one of the segments analyzed in the report, is expected to record a 7.7% CAGR and reach US$377.3 Million by the end of the analysis period. Growth in the Power Amplifiers segment is estimated at 5.3% CAGR over the analysis period.

The U.S. Market is Estimated at US$156.6 Million While China is Forecast to Grow at 7.1% CAGR

The Gallium Arsenide (GaAs) RF Devices market in the U.S. is estimated at US$156.6 Million in the year 2024. China, the world's second largest economy, is forecast to reach a projected market size of US$145.6 Million by the year 2030 trailing a CAGR of 7.1% over the analysis period 2024-2030. Among the other noteworthy geographic markets are Japan and Canada, each forecast to grow at a CAGR of 6.8% and 6.1% respectively over the analysis period. Within Europe, Germany is forecast to grow at approximately 5.8% CAGR.

Global Gallium Arsenide (GaAs) RF Devices Market - Key Trends & Drivers Summarized

Why Are GaAs RF Devices Essential to Modern High-Frequency Communications?

Gallium Arsenide (GaAs) RF devices are increasingly recognized as foundational components in the global communication infrastructure, enabling the high-frequency, low-noise, and high-efficiency performance required by modern wireless systems. GaAs possesses superior electron mobility and a direct bandgap, which allow it to outperform silicon in radio frequency (RF) and microwave applications, particularly in devices where power efficiency and signal fidelity are crucial. These characteristics make GaAs RF devices-such as power amplifiers, low-noise amplifiers, switches, and mixers-especially suitable for critical sectors including mobile telecommunications, aerospace and defense, satellite communication, radar systems, and wireless broadband. In consumer electronics, smartphones heavily rely on GaAs RF front-end modules to support multiband 4G and 5G connectivity while preserving battery life and maintaining compact form factors. GaAs devices also excel in linearity and gain, enabling them to support sophisticated modulation schemes required for high-data-rate applications. As the world shifts toward increasingly high-frequency spectrum usage, such as millimeter-wave frequencies in 5G and beyond, the limitations of silicon become more apparent-further solidifying GaAs’s relevance in advanced RF circuit design. With a growing emphasis on reliable, high-throughput wireless communication across devices and networks, GaAs RF devices are positioned as indispensable enablers of high-performance connectivity.

How Are Industry Applications Driving Growth and Diversification of GaAs RF Devices?

The expanding landscape of wireless-enabled applications is propelling the adoption of GaAs RF devices across a wide range of industries, each leveraging the technology’s unique strengths for specific operational demands. In mobile communications, GaAs power amplifiers and switches are widely used in both user devices and base stations to ensure strong signal transmission and reception across multiple frequency bands, including sub-6 GHz and mmWave. The defense and aerospace sectors have long depended on GaAs RF technology for radar, electronic warfare, and secure communication systems, where high power output, ruggedness, and resistance to radiation are vital. In satellite communications, GaAs RF components are used in transponders and terminals to provide high-frequency links for broadcasting, navigation, and global internet services. Additionally, the automotive industry is adopting GaAs RF devices in emerging applications such as vehicle-to-everything (V2X) communication and advanced driver-assistance systems (ADAS), where reliable high-frequency performance is critical to safety and autonomous functionality. Industrial IoT (IIoT) and smart infrastructure are also benefiting from GaAs RF devices in applications like smart meters, remote sensing, and machine-to-machine (M2M) communication. These diverse use cases are not only expanding market demand but are also encouraging manufacturers to develop custom, application-specific GaAs RF solutions that meet unique environmental and technical specifications.

What Technological Innovations Are Enhancing the Performance and Integration of GaAs RF Devices?

Breakthroughs in materials engineering, circuit design, and semiconductor processing are significantly enhancing the performance, integration, and manufacturability of GaAs RF devices, enabling them to meet the increasingly stringent demands of next-generation communication systems. Improvements in epitaxial growth techniques-such as metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE)-are producing higher-purity GaAs wafers with precise control over doping profiles and heterojunction formation, which are essential for fabricating high-efficiency transistors like HBTs (heterojunction bipolar transistors) and pHEMTs (pseudomorphic high electron mobility transistors). Advanced lithography and etching processes are enabling finer geometries and greater integration density, allowing for compact and high-performance monolithic microwave integrated circuits (MMICs). These MMICs, fabricated using GaAs substrates, combine multiple RF functions-such as amplification, filtering, and switching-into a single chip, reducing power consumption and physical footprint. Innovations in thermal management, including the use of advanced packaging and heat-spreading techniques, are improving the reliability of GaAs RF devices in high-power and high-temperature environments. Additionally, hybrid integration with complementary technologies such as GaN and SiGe is enabling multifunctional modules that combine the advantages of different materials to optimize performance across a wider frequency spectrum. With the support of electronic design automation (EDA) tools tailored for RF simulation and layout, engineers can now design, test, and iterate GaAs RF circuits more efficiently, accelerating the development of cutting-edge wireless systems.

What Market Forces Are Driving the Expansion of the GaAs RF Devices Industry?

The global GaAs RF devices market is experiencing robust growth fueled by the convergence of macroeconomic trends, technological imperatives, and evolving consumer expectations. One of the most prominent drivers is the rapid rollout and densification of 5G networks, which demand high-frequency and high-efficiency RF components capable of supporting greater bandwidth, low latency, and enhanced device-to-device communication. The surge in mobile data consumption, fueled by streaming, gaming, and real-time communication, is putting additional pressure on telecom providers to invest in high-performance RF hardware. Concurrently, the expansion of IoT ecosystems, from smart homes to industrial automation, is increasing the demand for compact, low-power RF modules, an area where GaAs components excel. Strategic investments by major chipmakers and government-backed initiatives to strengthen domestic semiconductor capabilities-especially in the U.S., China, South Korea, and the EU-are further energizing the GaAs RF supply chain. The trend toward miniaturization and multifunctionality in electronic devices is also driving the need for integrated RF solutions that combine performance with space and power efficiency. Meanwhile, ongoing geopolitical concerns around semiconductor supply chains are prompting nations and companies to diversify sourcing and invest in vertically integrated GaAs manufacturing. As new applications emerge in 6G, satellite internet, unmanned systems, and defense electronics, the demand for high-performance RF solutions will only grow stronger. GaAs RF devices, with their unique ability to meet the technical challenges of high-frequency operation, are well-positioned to remain a critical technology pillar in the next era of global connectivity.

SCOPE OF STUDY:

The report analyzes the Gallium Arsenide (GaAs) RF Devices market in terms of units by the following Segments, and Geographic Regions/Countries:

Segments:

Device (Filters, Power Amplifiers, Low Noise Amplifiers, Switch, Other Devices); Application (Consumer Devices, Automotive, Telecommunications, Aerospace & Defense, Other Applications)

Geographic Regions/Countries:

World; United States; Canada; Japan; China; Europe (France; Germany; Italy; United Kingdom; and Rest of Europe); Asia-Pacific; Rest of World.

Select Competitors (Total 47 Featured) -

  • Analog Devices, Inc.
  • AXT Inc.
  • CEL (California Eastern Laboratories)
  • China Crystal Technologies
  • Coherent Corp.
  • Freiberger Compound Materials GmbH
  • Guerrilla RF
  • IQE PLC
  • MACOM Technology Solutions
  • Microchip Technology Inc.
  • Murata Manufacturing Co., Ltd.
  • NXP Semiconductors N.V.
  • ON Semiconductor Corporation
  • Qorvo, Inc.
  • RFHIC Corporation
  • Shenzhou Crystal Technology Co., Ltd.
  • Skyworks Solutions, Inc.
  • Sumitomo Electric Industries, Ltd.
  • United Monolithic Semiconductors S.A.S.
  • Xiamen Powerway Advanced Material Co., Ltd.

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TABLE OF CONTENTS

I. METHODOLOGY

II. EXECUTIVE SUMMARY

  • 1. MARKET OVERVIEW
    • Influencer Market Insights
    • World Market Trajectories
    • Tariff Impact on Global Supply Chain Patterns
    • Gallium Arsenide (GaAs) RF Devices - Global Key Competitors Percentage Market Share in 2025 (E)
    • Competitive Market Presence - Strong/Active/Niche/Trivial for Players Worldwide in 2025 (E)
  • 2. FOCUS ON SELECT PLAYERS
  • 3. MARKET TRENDS & DRIVERS
    • 5G Infrastructure Rollouts Throw the Spotlight on High-Linearity GaAs RF Device Performance
    • Growth in Mobile Handsets Propels Demand for GaAs-Based Power Amplifiers and Switches
    • Push for Greater RF Efficiency Expands Addressable Market for GaAs in Multi-Band Transceivers
    • High Data Rate and Bandwidth Applications Strengthen the Business Case for GaAs Front-End Modules
    • Military and Aerospace RF Requirements Drive Continued Use of Radiation-Resistant GaAs Devices
    • Emergence of Wi-Fi 6 and 6E Standards Accelerates Adoption of GaAs in Consumer Wireless Devices
    • Low Noise Characteristics of GaAs Support Use in LNA Modules Across Telecom and IoT Equipment
    • Compact, High-Frequency Antenna Designs Benefit from GaAs-Based Component Miniaturization
    • Base Station Densification in Urban Areas Spurs Growth in GaAs RF Power Devices
    • Foundry Advancements in GaAs-on-Si Processes Enable Cost-Efficient, Scalable Production
    • Growing Role in 3D Sensing and VCSEL Modules Drives Adoption in Smartphones and Automotive Systems
    • High-Temperature Operating Requirements in Harsh Environments Support Demand for GaAs RF Components
    • Specialty Epitaxy and Wafer Processing Innovations Improve Yield and Device Consistency
  • 4. GLOBAL MARKET PERSPECTIVE
    • TABLE 1: World Gallium Arsenide (GaAs) RF Devices Market Analysis of Annual Sales in US$ Thousand for Years 2015 through 2030
    • TABLE 2: World Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 3: World 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets for Years 2025 & 2030
    • TABLE 4: World Recent Past, Current & Future Analysis for Filters by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 5: World 6-Year Perspective for Filters by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 6: World Recent Past, Current & Future Analysis for Power Amplifiers by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 7: World 6-Year Perspective for Power Amplifiers by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 8: World Recent Past, Current & Future Analysis for Low Noise Amplifiers by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 9: World 6-Year Perspective for Low Noise Amplifiers by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 10: World Recent Past, Current & Future Analysis for Switch by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 11: World 6-Year Perspective for Switch by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 12: World Recent Past, Current & Future Analysis for Other Devices by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 13: World 6-Year Perspective for Other Devices by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 14: World Recent Past, Current & Future Analysis for Other Applications by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 15: World 6-Year Perspective for Other Applications by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 16: World Recent Past, Current & Future Analysis for Consumer Devices by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 17: World 6-Year Perspective for Consumer Devices by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 18: World Recent Past, Current & Future Analysis for Automotive by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 19: World 6-Year Perspective for Automotive by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 20: World Recent Past, Current & Future Analysis for Telecommunications by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 21: World 6-Year Perspective for Telecommunications by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 22: World Recent Past, Current & Future Analysis for Aerospace & Defense by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 23: World 6-Year Perspective for Aerospace & Defense by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030

III. MARKET ANALYSIS

  • UNITED STATES
    • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in the United States for 2025 (E)
    • TABLE 24: USA Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 25: USA 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 26: USA Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 27: USA 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • CANADA
    • TABLE 28: Canada Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 29: Canada 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 30: Canada Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 31: Canada 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • JAPAN
    • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in Japan for 2025 (E)
    • TABLE 32: Japan Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 33: Japan 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 34: Japan Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 35: Japan 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • CHINA
    • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in China for 2025 (E)
    • TABLE 36: China Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 37: China 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 38: China Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 39: China 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • EUROPE
    • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in Europe for 2025 (E)
    • TABLE 40: Europe Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Geographic Region - France, Germany, Italy, UK and Rest of Europe Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 41: Europe 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Geographic Region - Percentage Breakdown of Value Sales for France, Germany, Italy, UK and Rest of Europe Markets for Years 2025 & 2030
    • TABLE 42: Europe Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 43: Europe 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 44: Europe Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 45: Europe 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • FRANCE
    • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in France for 2025 (E)
    • TABLE 46: France Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 47: France 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 48: France Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 49: France 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • GERMANY
    • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in Germany for 2025 (E)
    • TABLE 50: Germany Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 51: Germany 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 52: Germany Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 53: Germany 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • ITALY
    • TABLE 54: Italy Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 55: Italy 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 56: Italy Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 57: Italy 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • UNITED KINGDOM
    • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in the United Kingdom for 2025 (E)
    • TABLE 58: UK Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 59: UK 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 60: UK Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 61: UK 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • REST OF EUROPE
    • TABLE 62: Rest of Europe Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 63: Rest of Europe 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 64: Rest of Europe Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 65: Rest of Europe 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • ASIA-PACIFIC
    • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in Asia-Pacific for 2025 (E)
    • TABLE 66: Asia-Pacific Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 67: Asia-Pacific 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 68: Asia-Pacific Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 69: Asia-Pacific 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • REST OF WORLD
    • TABLE 70: Rest of World Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 71: Rest of World 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 72: Rest of World Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 73: Rest of World 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030

IV. COMPETITION