GaAs ICの世界市場

イントロダクション

半導体産業は大きな変革期を迎えており、ガリウムヒ素集積回路 (GaAs IC) はこうした変革の原動力として極めて重要な役割を果たしています。

当レポートでは、この重要なセグメントについて詳細に分析し、GaAs ICの現在・将来の市場情勢を定義する、様々な活用領域や技術進歩、市場動向について調査・考察しております。また、競合半導体市場で優位に立とうとする専門企業向けに設計されており、GaAs IC技術の成長・普及の促進要因に関する包括的な考察を提供しています。

GaAs IC技術の動向

GaAs ICの技術進歩は、通信から防衛まで、さまざまな分野を再構築しています。最も顕著な動向の一つに、高周波用途におけるGaAs ICの集積度の向上があります。その電子移動度の高さにより、GaAs ICは高周波 (RF) およびマイクロ波回路で優れた性能を発揮し、5Gネットワークや高度な衛星通信などの次世代通信システムに不可欠なものとなっています。GaAsは、より高い周波数と電力レベルで効率的に動作する能力により、将来のワイヤレス通信の重要な材料として位置づけられています。

オプトエレクトロニクスの領域では、GaAs ICはその直接遷移特性により、発光用途での効率を高め、牽引力を増しています。この動向は、光ファイバー通信の拡大や高度センサーの普及において特に顕著であり、GaAs ICはその比類のない速度と信頼性を提供しています。産業界がデータ伝送やセンシング技術の限界を押し広げ続ける中、GaAs ICはより高い性能基準を達成する上で重要な役割を果たすことになるでしょう。

防衛や航空宇宙分野もGaAs IC技術の主要な導入分野です。過酷な条件下でのGaAs回路の堅牢性と高性能は、レーダーシステム、電子戦、その他の重要な防衛技術への活用に理想的です。さらに、エネルギー効率や再生可能エネルギーソリューションへの関心増大により、従来のシリコンベースのデバイスに比べて効率と熱管理に優れた、GaAsベースの電力増幅器やコンバーターへの関心が高まっています。

目次

第1章 イントロダクション

第2章 エグゼクティブサマリー

第3章 技術的問題

• GaAsデバイス
  • FET
  • HEMT
  • HBT
• ロジックの構造の比較
  • バッファ付きFETロジック
  • FETロジック
  • 容量強化型ロジック
  • 直結型FETロジック
  • ソース結合型FETロジック
• 主要な課題
  • ウエハーの製造
  • エッチピット密度 (HPD)
• 装置
  • イオン注入装置 (インプランター)
  • リソグラフィー
  • エッチング
  • 蒸着
  • 急速熱処理
• パッケージ
  • パッケージの種類
  • 接着
• 試験
• 設計

第4章 GaAs ICの活用領域

• イントロダクション
  • 高周波化の傾向
  • アナログ変調からデジタル変調への移行
  • ディスクリート部品とシリコンベースIC
• 市場
  • 通信システム
  • テレビシステム
  • コンピューティング
  • データ通信
  • 自動車
  • 自動試験装置
  • 軍事

第5章 ICサプライヤーとエンドユーザーの問題

• イントロダクション
• シリコンとの競争
• 日本企業との競争
• 台湾市場の勢い
• 韓国市場の勢い
• ウエハーのサイズ
• SiGeとの競争
  • イントロダクション
  • 技術
  • 活用領域

第6章 市場予測

• 促進要因
• 市場予測の前提条件
• GaAs IC市場の予測
• SiGe IC市場の予測
• 最終用途市場

第7章 GaAs ICメーカーの概要

LIST OF TABLES

• 5.1. Cost Comparison for GaAs Structures
• 5.2. A Comparison of SiGe BiCMOS, RF CMOS, and InGaP/GaAs
• 6.1. Worldwide Merchant GaAs IC Market Forecast By Device Type
• 6.2. Worldwide Merchant Market Forecast By Geographical Region
• 6.3. Worldwide Merchant Market Forecast By Application
• 6.4. Market Shares of Merchant Participants-2013

LIST OF FIGURES

• 3.1. Schematic of GaAs MESFET
• 3.2. Schematic of GaAs HEMT Device
• 3.3. Schematic of GaAs HBT Device
• 3.4. Schematic of GaAs HBT Device
• 3.5. Symbolic Representations of Various GaAs Transistor Type
• 3.6. Schematic of BFL Logic Gate
• 3.7. Schematic of FETL Logic Gate
• 3.8. Schematic of CEL Logic Gate
• 3.9. Schematic of DCFL Logic Gate
• 3.10. Schematic of SCFL Logic Gate
• 3.11. Full wafer EPD mapping of LEC and VGF wafers
• 3.12. Mesoscopic EL2 mapping of LEC and VGF wafers
• 3.13. pHEMT MMIC Process Flow Chart
• 3.14. 0.15 Micron 3MI Process Cross Section
• 3.15. InGaP HBT Process
• 5.1. Comparison of Die Costs of Si and GaAs
• 5.2. Strained Silicon Germanium Technology
• 5.3. Fourth Generation Of Strain Technology
• 5.4. Performance Versus Germanium Content
• 5.5. Bulk Versus SOI Strain Method
• 6.1. Worldwide Merchant GaAs IC Market Forecast
• 6.2. Worldwide GaAs Merchant Market Forecast By Geographical Region
• 6.3. Worldwide GaAs Merchant Market Forecast By Application
• 6.4. Global Handset Market
• 6.5. Migration Of PA's In Handset Market
• 6.6. CMOS Replacement Of Bipolar And GaAs
• 6.7. Worldwide SiGe Market Forecast

Introduction

The semiconductor industry is on the cusp of significant transformations, with Gallium Arsenide Integrated Circuits (GaAs ICs) playing a pivotal role in driving these changes. Our report, "The GaAs IC Market," offers an in-depth analysis of this crucial segment, exploring the multifaceted applications, technological advancements, and market dynamics that define the current and future landscape of GaAs ICs. Designed for professionals looking to stay ahead in the competitive semiconductor market, this report provides comprehensive insights into the factors propelling the growth and adoption of GaAs IC technology.

Trends in GaAs IC Technology

The technological advancements in GaAs ICs are reshaping various sectors, from telecommunications to defense. One of the most prominent trends is the increasing integration of GaAs ICs in high-frequency applications. Thanks to their high electron mobility, GaAs ICs offer superior performance in RF and microwave circuits, making them indispensable for next-generation communication systems such as 5G networks and advanced satellite communications. The ability of GaAs to operate efficiently at higher frequencies and power levels positions it as a key material for the future of wireless communication.

In the realm of optoelectronics, GaAs ICs are gaining traction due to their direct bandgap property, which enhances their efficiency in light-emitting applications. This trend is particularly notable in the expansion of fiber optic communications and the proliferation of advanced sensors, where GaAs ICs provide unparalleled speed and reliability. As industries continue to push the boundaries of data transmission and sensing technologies, GaAs ICs are set to play a critical role in achieving higher performance standards.

The defense and aerospace sectors are also major adopters of GaAs IC technology. The robustness and high-performance capabilities of GaAs circuits under extreme conditions make them ideal for applications in radar systems, electronic warfare, and other critical defense technologies. Additionally, the growing focus on energy efficiency and renewable energy solutions has spurred interest in GaAs-based power amplifiers and converters, which offer superior efficiency and thermal management compared to traditional silicon-based devices.

The Need to Purchase This Report

For businesses and professionals navigating the semiconductor landscape, understanding the intricacies of the GaAs IC market is essential. This report provides a detailed analysis of current market trends, technological innovations, and key drivers shaping the GaAs IC industry. By purchasing this report, stakeholders will gain a strategic advantage through comprehensive market forecasts, competitive landscape evaluations, and insights into the latest advancements in GaAs technology.

Our report offers strategic recommendations for leveraging GaAs IC technology to enhance product performance and capture market opportunities. It delves into the applications of GaAs ICs across various sectors, including telecommunications, optoelectronics, and defense, providing readers with actionable intelligence to inform investment and development decisions. Companies looking to invest in GaAs technology or expand their market presence will find this report invaluable for identifying growth areas and understanding competitive dynamics.

In essence, "The GaAs IC Market" report is an indispensable resource for industry professionals, engineers, researchers, and business leaders. It equips readers with the knowledge needed to navigate the complexities of the GaAs IC market and capitalize on emerging opportunities. By understanding the trends and technological advancements detailed in this report, stakeholders can make informed decisions that drive innovation and growth in the semiconductor industry.

Table of Contents

Chapter 1. Introduction

Chapter 2. Executive Summary

• 2.1. Summary of Major Issues
• 2.2. Summary of Market Forecast

Chapter 3. Technology Issues

• 3.1. GaAs Devices
  • 3.1.1. FETs
  • 3.1.2. HEMTs
  • 3.1.3. HBT
• 3.2. Comparison of Logic Structures
  • 3.2.1. Buffered FET Logic
  • 3.2.2. FET Logic
  • 3.2.3. Capacitively Enhanced Logic
  • 3.2.4. Direct-Coupled FET Logic
  • 3.2.5. Source-Coupled FET Logic
• 3.3. Material Issues
  • 3.3.1. Wafer Production
  • 3.3.2. Etch Pit Densities
• 3.4. Equipment
  • 3.4.1. Implanters
  • 3.4.2. Lithography
  • 3.4.3. Etching
  • 3.4.4. Deposition
  • 3.4.5. Rapid Thermal Processing
• 3.5. Packaging
  • 3.5.1. Package Types
  • 3.5.2. Bonding
• 3.6. Testing
• 3.7. Design

Chapter 4. Applications for GaAs ICs

• 4.1. Introduction
  • 4.1.1. The Trend Toward Higher Frequencies
  • 4.1.2. Transition from Analog to Digital Modulation
  • 4.1.3. Discrete Components and Silicon-Based ICs
• 4.2. Markets
  • 4.2.1. Telecommunications Systems
  • 4.2.2. Television Systems
  • 4.2.3. Computing
  • 4.2.4. Data Communications
  • 4.2.5. Automotive
  • 4.2.6. Automated Test Equipment
  • 4.2.7. Military

Chapter 5. IC Supplier and End-User Issues

• 5.1. Introduction
• 5.2. Competing Against Silicon
• 5.3. Competing Against The Japanese
• 5.4. Taiwan's Market Momentum
• 5.5. Korea's Market Momentum
• 5.6. Wafer Sizes
• 5.7. Competing Against SiGe
  • 5.7.1. Introduction
  • 5.7.2. Technology
    • 5.7.2.1. Strained Silicon
    • 5.7.2.2. Device Manufacturing
  • 5.7.3. Applications
    • 5.7.3.1. Wireless LAN
    • 5.7.3.2. WiMAX
    • 5.7.3.3. Bluetooth
    • 5.7.3.4. Cellular
    • 5.7.3.5. GPS

Chapter 6. Market Forecast

• 6.1. Driving Forces
• 6.2. Market Forecast Assumptions
• 6.3. GaAs IC Market Forecast
• 6.4. SiGe IC Market Forecast
• 6.5. End Application Market

Chapter 7. Profile of GaAs IC Manufacturers