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GaN半導体デバイスの世界市場

GaN Semiconductor Devices


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英文 213 Pages
納期
即日から翌営業日
適宜更新あり
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本日の銀行送金レート: 1USD=146.08円
GaN半導体デバイスの世界市場
出版日: 2025年02月07日
発行: Global Industry Analysts, Inc.
ページ情報: 英文 213 Pages
納期: 即日から翌営業日
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概要

GaN半導体デバイスの世界市場は2030年までに177億米ドルに到達

2024年に57億米ドルと推定されるGaN半導体デバイスの世界市場は、分析期間2024-2030年にCAGR 20.9%で成長し、2030年には177億米ドルに達すると予測されます。本レポートで分析したセグメントの1つであるオプト半導体は、CAGR 19.4%を記録し、分析期間終了時には67億米ドルに達すると予測されます。パワー半導体セグメントの成長率は、分析期間でCAGR 21.1%と推定されます。

米国市場は16億米ドル、中国はCAGR20.4%で成長すると予測

米国のGaN半導体デバイス市場は、2024年に16億米ドルと推定されます。世界第2位の経済大国である中国は、2030年までに28億米ドルの市場規模に達すると予測され、分析期間2024-2030年のCAGRは20.4%です。その他の注目すべき地域別市場としては、日本とカナダがあり、分析期間中のCAGRはそれぞれ18.1%と17.5%と予測されています。欧州では、ドイツがCAGR約14.6%で成長すると予測されています。

世界のGaN半導体デバイス市場- 主要動向と促進要因のまとめ

GaN半導体デバイスはエレクトロニクスおよび電力産業にどのような革命をもたらしているか?

窒化ガリウム(GaN)半導体デバイスは、従来のシリコンベースの半導体よりも大きな利点を提供することで、エレクトロニクスおよび電力業界に変革をもたらしつつあります。ワイドバンドギャップ材料であるGaNは、より高い効率、より速いスイッチング速度、より高い電力密度を可能にし、パワーエレクトロニクス、RF(無線周波数)デバイス、通信などのアプリケーションに理想的です。トランジスタ、ダイオード、アンプなどのGaNデバイスは、シリコンよりも高い電圧と温度で動作するため、性能の向上とエネルギー損失の低減につながります。これらの特質は、電気自動車(EV)、5Gインフラ、再生可能エネルギー・システムなど、効率、小型化、電力管理が重要な分野で特に価値があります。

GaN半導体デバイスの最もインパクトのある用途のひとつは電力変換システムで、シリコンベースの部品に代わるより効率的な選択肢を提供します。例えば、GaNトランジスタは、はるかに高い周波数でスイッチングできるため、より小型、軽量、高効率の電源が可能になります。これは、より小型でエネルギー効率に優れたデバイスへの需要が絶えず高まっている家電製品のような産業では特に有益です。GaNデバイスはまた、データセンターや通信などの高性能アプリケーションにも採用されており、より高速なデータ・トランスミッションと低消費電力が可能になり、運用コストと環境への影響の低減に貢献しています。世界がよりエネルギー効率の高い技術へとシフトする中、GaN半導体デバイスは、エレクトロニクスと電力システムの未来を牽引する重要な役割を果たす用意があります。

どのような技術の進歩がGaN半導体デバイスの性能を高めていますか?

いくつかの技術的進歩により、GaN半導体デバイスの性能とスケーラビリティが大幅に向上し、様々なハイテクアプリケーションでの使用がより現実的になっています。主な発展の一つは、GaNオンシリコン(GaN-on-Si)技術の開発であり、これによりGaNデバイスは標準的なシリコン基板を使用して製造できるようになりました。この技術革新は、GaNの高性能特性を維持しながら製造コストを削減し、低価格でのGaNデバイスの大量生産を可能にします。GaN-on-Si技術はまた、既存のシリコンベースのシステムとの統合を容易にし、産業界が製造工程を大幅に変更することなくGaNデバイスを採用することを容易にします。

もう一つの大きな進歩は、GaNデバイスの熱管理技術の改善です。GaNはシリコンよりも高い温度と電力密度で動作するため、効果的な放熱はデバイスの信頼性と性能を維持するために不可欠です。GaNデバイスの熱伝導性を向上させ、過熱することなく高い電力負荷に対応できるようにするために、新しいパッケージング技術やマテリアルが開発されています。これは、GaNデバイスが厳しい環境で使用される電気自動車、航空宇宙、産業用オートメーションなどの大電力アプリケーションにおいて特に重要です。このような進歩により、GaN半導体デバイスの応用範囲は拡大し、民生用電子機器から重工業用機器に至るまで、あらゆる用途に適しています。

さらに、製造プロセスの進歩により、より小型で効率的なGaNトランジスタ、ダイオード、アンプの製造が可能になっています。例えば、GaN技術に基づく高電子移動度トランジスタ(HEMT)は現在、100GHzを超える周波数で動作可能であり、5Gネットワークや衛星通信を含む次世代通信システムに最適です。高性能を維持しながらGaNデバイスを小型化できるようになったことで、コンパクトで高効率なパワーエレクトロニクスやRFシステムに新たな可能性が生まれ、さまざまな産業でイノベーションが進んでいます。このような技術の進歩により、GaN半導体デバイスはエネルギー効率の高い高性能エレクトロニクスをリードし続けています。

GaN半導体デバイスは、電気自動車、5G、再生可能エネルギーの成長をどのようにサポートしていますか?

GaN半導体デバイスは、電気自動車(EV)、5Gインフラ、再生可能エネルギー技術の成長をサポートするために、これらの急速に発展する分野に必要な高効率、電力密度、性能を提供することで、重要な役割を果たしています。EV業界では、GaNデバイスが車載充電器、インバーター、電力管理システムでより効率的な電力変換を可能にしています。従来のシリコン部品に比べ、スイッチング速度が速く、エネルギー損失が少ないため、エネルギー効率が向上し、より軽量でコンパクトなシステムを実現することができ、ひいては走行距離の延長や充電時間の短縮につながります。GaN技術は、自動車メーカーがEVに搭載するパワーエレクトロニクスの小型・軽量化に貢献し、車両全体の効率と性能の向上に寄与するとともに、EVシステムのコストと複雑さを軽減しています。

通信分野では、GaN半導体デバイスは、より高周波で高出力のRFコンポーネントを必要とする5Gネットワークの展開に不可欠です。ミリ波周波数(30~300GHz)で高い電力効率で動作するGaNの能力は、5G基地局、RFアンプ、スモールセルネットワークに最適です。これらのデバイスは、より高速なデータ・トランスミッション、低遅延、帯域幅の拡大をサポートし、これらはすべて5G通信の高速、低遅延要件に不可欠です。GaN技術はまた、5Gネットワークが世界的に拡大する中で重要な要素である、通信インフラにおけるエネルギー消費の削減にも貢献しています。

再生可能エネルギー・システムでは、GaNデバイスは電力コンバータやインバータの効率向上に使用されており、ソーラーパネルや風力タービンなどのエネルギー源から利用可能な電力に変換するために不可欠です。GaNの高効率と低電力損失は、より効果的なエネルギー変換を可能にし、無駄を省き、再生可能エネルギーシステム全体の出力を増加させます。このため、GaN半導体デバイスは、ソーラー・インバータ、風力発電コンバータ、エネルギー貯蔵システムの性能を最適化する上で極めて重要です。世界がより環境に優しいエネルギー源への移行を続ける中、GaN技術は再生可能エネルギーインフラの効率と信頼性を最大化するのに役立っています。

GaN半導体デバイス市場の成長の原動力は?

エネルギー効率の高い技術に対する需要の増加、電気自動車の拡大、5Gネットワークの展開など、いくつかの要因がGaN半導体デバイス市場の急成長を後押ししています。主な促進要因の1つは、エネルギー効率と持続可能性に向けた世界の推進力です。産業界、政府、消費者がエネルギー消費の削減と環境への影響の最小化を求める中、GaNデバイスは従来のシリコン部品よりも高効率で電力損失が少ないため、重要なソリューションとして台頭しています。家電、自動車、通信などの分野では、よりエネルギー効率の高い電力変換システムが求められており、GaNデバイスの採用が進んでいます。

電気自動車(EV)の台頭もGaN市場の成長に寄与する大きな要因のひとつです。自動車メーカーがEV開発とインフラへの投資を続ける中、より効率的なパワーエレクトロニクスへのニーズが高まっています。GaNデバイスは、サイズ、重量、エネルギー効率の点でシリコンを大きく上回る利点を備えており、EVのパワートレイン、充電システム、電力管理に理想的な選択肢となっています。世界各国の政府が電気自動車の普及に意欲的な目標を掲げていることから、GaNベースのパワーエレクトロニクスに対する需要は今後数年で急増すると予想されます。

5Gネットワークの世界の展開もGaN半導体デバイス市場の主要な促進要因です。通信事業者が5Gのより高い周波数とより高速なデータレートをサポートするために必要なインフラを構築するにつれ、RFアプリケーションにおける優れた性能を持つGaNデバイスが広く採用されるようになっています。電力損失を最小限に抑えながら高周波で動作するGaNの能力は、5G基地局、アンテナ、RFアンプに不可欠な部品となっています。5Gの拡大は、通信事業者が次世代ワイヤレス通信ネットワークの展開を継続する中で、GaN半導体デバイスの持続的な需要を促進すると予想されます。

GaN半導体デバイスの開発を形作る今後の動向は?

GaNとシリコンの統合の進展、パッケージング技術の先進化、コンシューマーエレクトロニクスにおけるGaNの台頭など、いくつかの新たな動向がGaN半導体デバイスの将来の開発を形成しています。最も注目すべき動向の一つは、GaN-on-Si(GaN-on-Si)技術の利用の増加であり、これはシリコンのコスト効率と拡張性とGaNの優れた性能を組み合わせたものです。このハイブリッド・アプローチは、GaNデバイスをより手頃な価格にし、既存のシリコン・ベースのシステムへの統合を容易にすることで、業界全体への幅広い採用を促進しています。GaN-on-Si技術は、コストと性能のバランスを慎重に考慮する必要がある家電製品のような大量生産市場において特に魅力的です。

もう一つの重要な動向は、GaNデバイスの先進パッケージング技術です。GaNはシリコンよりも高い電力密度と温度で動作するため、信頼性と性能を維持するためには効果的な熱管理とパッケージングが不可欠です。チップスケールパッケージング(CSP)や先進サーマルマテリアルなどのパッケージングの革新により、GaNデバイスはサイズと重量を減らしながら、より高い電力負荷に対応できるようになっています。これらの進歩は、スペースと熱の制約が重要な電気自動車、航空宇宙、産業オートメーションなどのアプリケーションにとって極めて重要です。パッケージング・ソリューションの改善により、要求の厳しい環境でのGaNデバイスの使用はさらに拡大するでしょう。

民生用電子機器におけるGaNの使用の増加は、この市場の将来を形作るもう一つの動向です。例えば、GaNベースの電源アダプタや充電器は、そのコンパクトなサイズと高い効率性により普及しつつあります。GaNトランジスタは、より高速、低温、小型の電源を可能にし、ノートパソコン、スマートフォン、その他の携帯機器に最適です。消費者がより小型で効率的な電子機器を求める中、GaN技術は民生用電子機器市場の標準となる準備が整っています。このような動向の進展に伴い、GaN半導体デバイスは、広範な産業の革新と効率化を推進する上で、ますます重要な役割を果たすことになるでしょう。

セグメント

セグメント(光半導体、パワー半導体、GaN高周波デバイス)、エンドユーザー(自動車、家電、航空宇宙・防衛、ヘルスケア、情報通信技術、その他のエンドユーザー)

調査対象企業の例(注目の17社)

  • Bridgelux, Inc.
  • Cree, Inc.
  • Infineon Technologies AG
  • Nichia Corporation
  • NXP Semiconductors NV
  • Osram Opto Semiconductors GmbH
  • Qorvo, Inc.
  • Toyoda Gosei Co., Ltd.

目次

第1章 調査手法

第2章 エグゼクティブサマリー

  • 市場概要
  • 主要企業
  • 市場動向と促進要因
  • 世界市場の見通し

第3章 市場分析

  • 米国
  • カナダ
  • 日本
  • 中国
  • 欧州
  • フランス
  • ドイツ
  • イタリア
  • 英国
  • その他欧州
  • アジア太平洋
  • その他の地域

第4章 競合

目次
Product Code: MCP12121

Global GaN Semiconductor Devices Market to Reach US$17.7 Billion by 2030

The global market for GaN Semiconductor Devices estimated at US$5.7 Billion in the year 2024, is expected to reach US$17.7 Billion by 2030, growing at a CAGR of 20.9% over the analysis period 2024-2030. Opto-Semiconductors, one of the segments analyzed in the report, is expected to record a 19.4% CAGR and reach US$6.7 Billion by the end of the analysis period. Growth in the Power Semiconductors segment is estimated at 21.1% CAGR over the analysis period.

The U.S. Market is Estimated at US$1.6 Billion While China is Forecast to Grow at 20.4% CAGR

The GaN Semiconductor Devices market in the U.S. is estimated at US$1.6 Billion in the year 2024. China, the world's second largest economy, is forecast to reach a projected market size of US$2.8 Billion by the year 2030 trailing a CAGR of 20.4% over the analysis period 2024-2030. Among the other noteworthy geographic markets are Japan and Canada, each forecast to grow at a CAGR of 18.1% and 17.5% respectively over the analysis period. Within Europe, Germany is forecast to grow at approximately 14.6% CAGR.

Global GaN Semiconductor Devices Market - Key Trends and Drivers Summarized

How Are GaN Semiconductor Devices Revolutionizing the Electronics and Power Industry?

Gallium Nitride (GaN) semiconductor devices are transforming the electronics and power industry by offering significant advantages over traditional silicon-based semiconductors. GaN, a wide bandgap material, allows for higher efficiency, faster switching speeds, and greater power density, making it ideal for applications in power electronics, RF (radio frequency) devices, and telecommunications. GaN devices, such as transistors, diodes, and amplifiers, operate at higher voltages and temperatures than silicon, which leads to enhanced performance and reduced energy losses. These qualities are particularly valuable in sectors where efficiency, miniaturization, and power management are critical, such as electric vehicles (EVs), 5G infrastructure, and renewable energy systems.

One of the most impactful uses of GaN semiconductor devices is in power conversion systems, where they offer a more efficient alternative to silicon-based components. GaN transistors, for instance, can switch at much higher frequencies, allowing for smaller, lighter, and more efficient power supplies. This is especially beneficial in industries like consumer electronics, where the demand for more compact, energy-efficient devices is constantly growing. GaN devices are also being adopted in high-performance applications, such as data centers and telecommunications, where they enable faster data transmission and lower power consumption, contributing to reduced operational costs and environmental impact. As the world shifts towards more energy-efficient technologies, GaN semiconductor devices are poised to play a key role in driving the future of electronics and power systems.

What Technological Advancements Are Enhancing the Performance of GaN Semiconductor Devices?

Several technological advancements are significantly enhancing the performance and scalability of GaN semiconductor devices, making them more viable for widespread use in various high-tech applications. One of the key advancements is the development of GaN-on-silicon (GaN-on-Si) technology, which allows GaN devices to be manufactured using standard silicon substrates. This innovation reduces production costs while maintaining the high-performance characteristics of GaN, enabling mass production of GaN devices at a lower price point. GaN-on-Si technology also facilitates integration with existing silicon-based systems, making it easier for industries to adopt GaN devices without significant changes to their manufacturing processes.

Another major advancement is the improvement in thermal management techniques for GaN devices. Since GaN operates at higher temperatures and power densities than silicon, effective heat dissipation is critical to maintaining device reliability and performance. New packaging technologies and materials are being developed to improve the thermal conductivity of GaN devices, allowing them to handle higher power loads without overheating. This is particularly important in high-power applications such as electric vehicles, aerospace, and industrial automation, where GaN devices are used in demanding environments. These advancements are helping to expand the range of applications for GaN semiconductor devices, making them suitable for everything from consumer electronics to heavy industrial equipment.

Additionally, advancements in fabrication processes are enabling the production of smaller and more efficient GaN transistors, diodes, and amplifiers. High-electron-mobility transistors (HEMTs) based on GaN technology, for example, are now capable of operating at frequencies beyond 100 GHz, making them ideal for next-generation telecommunications systems, including 5G networks and satellite communications. The ability to miniaturize GaN devices while maintaining high performance is opening up new possibilities for compact, high-efficiency power electronics and RF systems, driving innovation across multiple industries. These technological advancements are ensuring that GaN semiconductor devices continue to lead the way in energy-efficient, high-performance electronics.

How Are GaN Semiconductor Devices Supporting the Growth of Electric Vehicles, 5G, and Renewable Energy?

GaN semiconductor devices are playing a crucial role in supporting the growth of electric vehicles (EVs), 5G infrastructure, and renewable energy technologies by offering the high efficiency, power density, and performance needed for these rapidly evolving sectors. In the EV industry, GaN devices are enabling more efficient power conversion in onboard chargers, inverters, and power management systems. Their higher switching speeds and lower energy losses compared to traditional silicon components allow for lighter, more compact systems with improved energy efficiency, which in turn leads to longer driving ranges and faster charging times. GaN technology is helping automakers reduce the size and weight of power electronics in EVs, contributing to overall vehicle efficiency and performance, while also reducing the cost and complexity of EV systems.

In the telecommunications sector, GaN semiconductor devices are integral to the rollout of 5G networks, which require higher-frequency, higher-power RF components. GaN’s ability to operate at millimeter-wave frequencies (30-300 GHz) with high power efficiency makes it a perfect fit for 5G base stations, RF amplifiers, and small cell networks. These devices support faster data transmission, lower latency, and increased bandwidth, all of which are critical for the high-speed, low-latency requirements of 5G communication. GaN technology is also helping to reduce energy consumption in telecom infrastructure, a key factor as 5G networks expand globally.

In renewable energy systems, GaN devices are used to improve the efficiency of power converters and inverters, which are essential for converting energy from sources like solar panels and wind turbines into usable electricity. GaN’s high efficiency and low power loss enable more effective energy conversion, reducing waste and increasing the overall output of renewable energy systems. This makes GaN semiconductor devices crucial for optimizing the performance of solar inverters, wind power converters, and energy storage systems. As the world continues to transition to greener energy sources, GaN technology is helping to maximize the efficiency and reliability of renewable energy infrastructure.

What’s Driving the Growth of the GaN Semiconductor Device Market?

Several factors are driving the rapid growth of the GaN semiconductor device market, including the increasing demand for energy-efficient technologies, the expansion of electric vehicles, and the rollout of 5G networks. One of the primary drivers is the global push towards energy efficiency and sustainability. As industries, governments, and consumers seek to reduce energy consumption and minimize environmental impact, GaN devices are emerging as a key solution due to their ability to operate with higher efficiency and lower power losses than traditional silicon components. In sectors such as consumer electronics, automotive, and telecommunications, the demand for more energy-efficient power conversion systems is fueling the adoption of GaN semiconductor devices.

The rise of electric vehicles (EVs) is another major factor contributing to the growth of the GaN market. As automakers continue to invest in EV development and infrastructure, the need for more efficient power electronics is increasing. GaN devices offer significant advantages over silicon in terms of size, weight, and energy efficiency, making them an ideal choice for EV powertrains, charging systems, and power management. With governments worldwide setting ambitious targets for the adoption of electric vehicles, the demand for GaN-based power electronics is expected to surge in the coming years.

The global rollout of 5G networks is also a key driver of the GaN semiconductor device market. As telecom providers build out the infrastructure needed to support 5G’s higher frequencies and faster data rates, GaN devices are being widely adopted for their superior performance in RF applications. GaN’s ability to operate at high frequencies with minimal power loss makes it a vital component in 5G base stations, antennas, and RF amplifiers. The expansion of 5G is expected to drive sustained demand for GaN semiconductor devices as telecom operators continue to deploy the next generation of wireless communication networks.

What Future Trends Are Shaping the Development of GaN Semiconductor Devices?

Several emerging trends are shaping the future development of GaN semiconductor devices, including the growing integration of GaN with silicon, advancements in packaging technologies, and the rise of GaN in consumer electronics. One of the most notable trends is the increasing use of GaN-on-silicon (GaN-on-Si) technology, which combines the cost-effectiveness and scalability of silicon with the superior performance of GaN. This hybrid approach is making GaN devices more affordable and easier to integrate into existing silicon-based systems, driving broader adoption across industries. GaN-on-Si technology is particularly attractive in high-volume markets such as consumer electronics, where cost and performance need to be carefully balanced.

Another key trend is the advancement in packaging technologies for GaN devices. As GaN operates at higher power densities and temperatures than silicon, effective thermal management and packaging are essential for maintaining reliability and performance. Innovations in packaging, such as chip-scale packaging (CSP) and advanced thermal materials, are allowing GaN devices to handle higher power loads while reducing size and weight. These advancements are crucial for applications in electric vehicles, aerospace, and industrial automation, where space and thermal constraints are critical. Improved packaging solutions will further expand the use of GaN devices in demanding environments.

The increasing use of GaN in consumer electronics is another trend shaping the future of this market. GaN-based power adapters and chargers, for example, are becoming popular due to their compact size and high efficiency. GaN transistors allow for faster, cooler, and smaller power supplies, making them ideal for laptops, smartphones, and other portable devices. As consumers demand more compact and efficient electronics, GaN technology is poised to become a standard in the consumer electronics market. As these trends continue to develop, GaN semiconductor devices will play an increasingly important role in driving innovation and efficiency across a wide range of industries.

SCOPE OF STUDY:

The report analyzes the GaN Semiconductor Devices market in terms of units by the following Segments, and Geographic Regions/Countries:

Segments:

Segment (Opto-Semiconductors, Power Semiconductors, GaN Radio Frequency Devices); End-Use (Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology, Other End-Uses)

Geographic Regions/Countries:

World; United States; Canada; Japan; China; Europe (France; Germany; Italy; United Kingdom; and Rest of Europe); Asia-Pacific; Rest of World.

Select Competitors (Total 17 Featured) -

  • Bridgelux, Inc.
  • Cree, Inc.
  • Infineon Technologies AG
  • Nichia Corporation
  • NXP Semiconductors NV
  • Osram Opto Semiconductors GmbH
  • Qorvo, Inc.
  • Toyoda Gosei Co., Ltd.

TABLE OF CONTENTS

I. METHODOLOGY

II. EXECUTIVE SUMMARY

  • 1. MARKET OVERVIEW
    • Influencer Market Insights
    • World Market Trajectories
    • Global Economic Update
    • GaN Semiconductor Devices - Global Key Competitors Percentage Market Share in 2025 (E)
    • Competitive Market Presence - Strong/Active/Niche/Trivial for Players Worldwide in 2025 (E)
  • 2. FOCUS ON SELECT PLAYERS
  • 3. MARKET TRENDS & DRIVERS
    • Advancements in GaN Technology Propel Its Adoption in Power Electronics
    • Growth of Electric Vehicle Markets Drives Demand for GaN Power Devices
    • Increasing Application of GaN Devices in Fast Charging Solutions
    • Miniaturization of Electronic Components Boosts GaN Adoption in Consumer Electronics
    • Role of GaN in Military and Defense for High-frequency Radar
    • Advances in 5G Technology and the Need for High-performance Semiconductors
    • Environmental Benefits of GaN Over Silicon in Power Applications
    • Expansion of GaN in RF Applications Due to Superior Performance
    • Innovations in GaN LED Technologies for Lighting Applications
    • Integration of GaN Devices in Space Applications
  • 4. GLOBAL MARKET PERSPECTIVE
    • TABLE 1: World GaN Semiconductor Devices Market Analysis of Annual Sales in US$ Thousand for Years 2015 through 2030
    • TABLE 2: World Recent Past, Current & Future Analysis for GaN Semiconductor Devices by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 3: World 6-Year Perspective for GaN Semiconductor Devices by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets for Years 2025 & 2030
    • TABLE 4: World Recent Past, Current & Future Analysis for Opto-Semiconductors by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 5: World 6-Year Perspective for Opto-Semiconductors by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 6: World Recent Past, Current & Future Analysis for Power Semiconductors by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 7: World 6-Year Perspective for Power Semiconductors by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 8: World Recent Past, Current & Future Analysis for GaN Radio Frequency Devices by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 9: World 6-Year Perspective for GaN Radio Frequency Devices by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 10: World Recent Past, Current & Future Analysis for Automotive by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 11: World 6-Year Perspective for Automotive by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 12: World Recent Past, Current & Future Analysis for Consumer Electronics by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 13: World 6-Year Perspective for Consumer Electronics by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 14: World Recent Past, Current & Future Analysis for Aerospace & Defense by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 15: World 6-Year Perspective for Aerospace & Defense by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 16: World Recent Past, Current & Future Analysis for Healthcare by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 17: World 6-Year Perspective for Healthcare by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 18: World Recent Past, Current & Future Analysis for Information & Communication Technology by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 19: World 6-Year Perspective for Information & Communication Technology by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 20: World Recent Past, Current & Future Analysis for Other End-Uses by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 21: World 6-Year Perspective for Other End-Uses by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030

III. MARKET ANALYSIS

  • UNITED STATES
    • GaN Semiconductor Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in the United States for 2025 (E)
    • TABLE 22: USA Recent Past, Current & Future Analysis for GaN Semiconductor Devices by Segment - Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 23: USA 6-Year Perspective for GaN Semiconductor Devices by Segment - Percentage Breakdown of Value Sales for Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices for the Years 2025 & 2030
    • TABLE 24: USA Recent Past, Current & Future Analysis for GaN Semiconductor Devices by End-Use - Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 25: USA 6-Year Perspective for GaN Semiconductor Devices by End-Use - Percentage Breakdown of Value Sales for Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses for the Years 2025 & 2030
  • CANADA
    • TABLE 26: Canada Recent Past, Current & Future Analysis for GaN Semiconductor Devices by Segment - Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 27: Canada 6-Year Perspective for GaN Semiconductor Devices by Segment - Percentage Breakdown of Value Sales for Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices for the Years 2025 & 2030
    • TABLE 28: Canada Recent Past, Current & Future Analysis for GaN Semiconductor Devices by End-Use - Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 29: Canada 6-Year Perspective for GaN Semiconductor Devices by End-Use - Percentage Breakdown of Value Sales for Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses for the Years 2025 & 2030
  • JAPAN
    • GaN Semiconductor Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in Japan for 2025 (E)
    • TABLE 30: Japan Recent Past, Current & Future Analysis for GaN Semiconductor Devices by Segment - Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 31: Japan 6-Year Perspective for GaN Semiconductor Devices by Segment - Percentage Breakdown of Value Sales for Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices for the Years 2025 & 2030
    • TABLE 32: Japan Recent Past, Current & Future Analysis for GaN Semiconductor Devices by End-Use - Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 33: Japan 6-Year Perspective for GaN Semiconductor Devices by End-Use - Percentage Breakdown of Value Sales for Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses for the Years 2025 & 2030
  • CHINA
    • GaN Semiconductor Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in China for 2025 (E)
    • TABLE 34: China Recent Past, Current & Future Analysis for GaN Semiconductor Devices by Segment - Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 35: China 6-Year Perspective for GaN Semiconductor Devices by Segment - Percentage Breakdown of Value Sales for Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices for the Years 2025 & 2030
    • TABLE 36: China Recent Past, Current & Future Analysis for GaN Semiconductor Devices by End-Use - Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 37: China 6-Year Perspective for GaN Semiconductor Devices by End-Use - Percentage Breakdown of Value Sales for Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses for the Years 2025 & 2030
  • EUROPE
    • GaN Semiconductor Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in Europe for 2025 (E)
    • TABLE 38: Europe Recent Past, Current & Future Analysis for GaN Semiconductor Devices by Geographic Region - France, Germany, Italy, UK and Rest of Europe Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 39: Europe 6-Year Perspective for GaN Semiconductor Devices by Geographic Region - Percentage Breakdown of Value Sales for France, Germany, Italy, UK and Rest of Europe Markets for Years 2025 & 2030
    • TABLE 40: Europe Recent Past, Current & Future Analysis for GaN Semiconductor Devices by Segment - Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 41: Europe 6-Year Perspective for GaN Semiconductor Devices by Segment - Percentage Breakdown of Value Sales for Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices for the Years 2025 & 2030
    • TABLE 42: Europe Recent Past, Current & Future Analysis for GaN Semiconductor Devices by End-Use - Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 43: Europe 6-Year Perspective for GaN Semiconductor Devices by End-Use - Percentage Breakdown of Value Sales for Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses for the Years 2025 & 2030
  • FRANCE
    • GaN Semiconductor Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in France for 2025 (E)
    • TABLE 44: France Recent Past, Current & Future Analysis for GaN Semiconductor Devices by Segment - Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 45: France 6-Year Perspective for GaN Semiconductor Devices by Segment - Percentage Breakdown of Value Sales for Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices for the Years 2025 & 2030
    • TABLE 46: France Recent Past, Current & Future Analysis for GaN Semiconductor Devices by End-Use - Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 47: France 6-Year Perspective for GaN Semiconductor Devices by End-Use - Percentage Breakdown of Value Sales for Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses for the Years 2025 & 2030
  • GERMANY
    • GaN Semiconductor Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in Germany for 2025 (E)
    • TABLE 48: Germany Recent Past, Current & Future Analysis for GaN Semiconductor Devices by Segment - Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 49: Germany 6-Year Perspective for GaN Semiconductor Devices by Segment - Percentage Breakdown of Value Sales for Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices for the Years 2025 & 2030
    • TABLE 50: Germany Recent Past, Current & Future Analysis for GaN Semiconductor Devices by End-Use - Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 51: Germany 6-Year Perspective for GaN Semiconductor Devices by End-Use - Percentage Breakdown of Value Sales for Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses for the Years 2025 & 2030
  • ITALY
    • TABLE 52: Italy Recent Past, Current & Future Analysis for GaN Semiconductor Devices by Segment - Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 53: Italy 6-Year Perspective for GaN Semiconductor Devices by Segment - Percentage Breakdown of Value Sales for Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices for the Years 2025 & 2030
    • TABLE 54: Italy Recent Past, Current & Future Analysis for GaN Semiconductor Devices by End-Use - Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 55: Italy 6-Year Perspective for GaN Semiconductor Devices by End-Use - Percentage Breakdown of Value Sales for Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses for the Years 2025 & 2030
  • UNITED KINGDOM
    • GaN Semiconductor Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in the United Kingdom for 2025 (E)
    • TABLE 56: UK Recent Past, Current & Future Analysis for GaN Semiconductor Devices by Segment - Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 57: UK 6-Year Perspective for GaN Semiconductor Devices by Segment - Percentage Breakdown of Value Sales for Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices for the Years 2025 & 2030
    • TABLE 58: UK Recent Past, Current & Future Analysis for GaN Semiconductor Devices by End-Use - Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 59: UK 6-Year Perspective for GaN Semiconductor Devices by End-Use - Percentage Breakdown of Value Sales for Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses for the Years 2025 & 2030
  • REST OF EUROPE
    • TABLE 60: Rest of Europe Recent Past, Current & Future Analysis for GaN Semiconductor Devices by Segment - Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 61: Rest of Europe 6-Year Perspective for GaN Semiconductor Devices by Segment - Percentage Breakdown of Value Sales for Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices for the Years 2025 & 2030
    • TABLE 62: Rest of Europe Recent Past, Current & Future Analysis for GaN Semiconductor Devices by End-Use - Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 63: Rest of Europe 6-Year Perspective for GaN Semiconductor Devices by End-Use - Percentage Breakdown of Value Sales for Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses for the Years 2025 & 2030
  • ASIA-PACIFIC
    • GaN Semiconductor Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in Asia-Pacific for 2025 (E)
    • TABLE 64: Asia-Pacific Recent Past, Current & Future Analysis for GaN Semiconductor Devices by Segment - Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 65: Asia-Pacific 6-Year Perspective for GaN Semiconductor Devices by Segment - Percentage Breakdown of Value Sales for Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices for the Years 2025 & 2030
    • TABLE 66: Asia-Pacific Recent Past, Current & Future Analysis for GaN Semiconductor Devices by End-Use - Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 67: Asia-Pacific 6-Year Perspective for GaN Semiconductor Devices by End-Use - Percentage Breakdown of Value Sales for Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses for the Years 2025 & 2030
  • REST OF WORLD
    • TABLE 68: Rest of World Recent Past, Current & Future Analysis for GaN Semiconductor Devices by Segment - Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 69: Rest of World 6-Year Perspective for GaN Semiconductor Devices by Segment - Percentage Breakdown of Value Sales for Opto-Semiconductors, Power Semiconductors and GaN Radio Frequency Devices for the Years 2025 & 2030
    • TABLE 70: Rest of World Recent Past, Current & Future Analysis for GaN Semiconductor Devices by End-Use - Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 71: Rest of World 6-Year Perspective for GaN Semiconductor Devices by End-Use - Percentage Breakdown of Value Sales for Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Information & Communication Technology and Other End-Uses for the Years 2025 & 2030

IV. COMPETITION