炭化ケイ素（SiC）パワーデバイス市場規模、シェア、成長分析：タイプ別、電圧範囲別、用途別、地域別 - 産業予測 2025～2032年

炭化ケイ素（SiC）パワーデバイス市場規模は2023年に12億4,000万米ドルと評価され、2024年の15億3,000万米ドルから2032年には84億1,000万米ドルに成長し、予測期間（2025-2032年）のCAGRは23.7％で成長する見通しです。

世界の炭化ケイ素（SiC）パワーデバイス市場は、エネルギー効率の高いソリューションに対する需要の高まり、電気自動車（EV）の普及、再生可能エネルギー源の統合によって、力強い成長を遂げています。SiCデバイスは、伝導損失とスイッチング損失が低いため、従来のシリコンデバイスを凌駕し、より高い動作周波数と動作温度で効率を高めることができます。これは特に自動車分野で顕著で、SiCデバイスはより高い電圧と温度条件をサポートすることでEVの性能を強化し、電力変換効率と走行距離を向上させます。さらに、結晶成長技術の向上やウエハースケール生産などの製造プロセスの進歩により、製造コストが削減され、世界の二酸化炭素削減の動きの中で、さまざまな産業用途へのSiC技術の普及をさらに後押ししています。

目次

イントロダクション

• 調査の目的
• 調査範囲
• 定義

調査手法

• 情報調達
• 二次と一次データの方法
• 市場規模予測
• 市場の前提条件と制限

エグゼクティブサマリー

• 世界市場の見通し
• 供給と需要の動向分析
• セグメント別機会分析

市場力学と見通し

• 市場概要
• 市場規模
• 市場力学
  • 促進要因と機会
  • 抑制要因と課題
• ポーターの分析

主な市場の考察

• 重要成功要因
• 競合の程度
• 主な投資機会
• 市場エコシステム
• 市場の魅力指数（2024年）
• PESTEL分析
• マクロ経済指標
• バリューチェーン分析
• 価格分析
• ケーススタディ
• 技術の進歩
• 規制情勢
• 特許分析

炭化ケイ素（SiC）パワーデバイス市場規模：タイプ別& CAGR（2025-2032）

• 市場概要
• SiCディスクリートデバイス
• SiCパワーモジュール

炭化ケイ素（SiC）パワーデバイス市場規模：電圧範囲別& CAGR（2025-2032）

• 市場概要
• 低電圧
• 中電圧
• 高電圧

炭化ケイ素（SiC）パワーデバイス市場規模：用途別& CAGR（2025-2032）

• 市場概要
• 自動車
• 産業
• 家電
• 通信
• エネルギーと電力
• 航空宇宙と防衛
• 医療機器

炭化ケイ素（SiC）パワーデバイス市場規模：地域別& CAGR（2025-2032）

• 北米
  • 米国
  • カナダ
• 欧州
  • ドイツ
  • スペイン
  • フランス
  • 英国
  • イタリア
  • その他欧州地域
• アジア太平洋地域
  • 中国
  • インド
  • 日本
  • 韓国
  • その他アジア太平洋地域
• ラテンアメリカ
  • ブラジル
  • その他ラテンアメリカ地域
• 中東・アフリカ
  • GCC諸国
  • 南アフリカ
  • その他中東・アフリカ

競合情報

• 上位5社の比較
• 主要企業の市場ポジショニング（2024年）
• 主な市場企業が採用した戦略
• 最近の市場動向
• 企業の市場シェア分析（2024年）
• 主要企業の企業プロファイル
  • 企業の詳細
  • 製品ポートフォリオ分析
  • 企業のセグメント別シェア分析
  • 収益の前年比比較（2022-2024）

主要企業プロファイル

• STMicroelectronics N.V.（Switzerland）
• Infineon Technologies AG（Germany）
• Wolfspeed, Inc.（USA）
• ROHM Co., Ltd.（Japan）
• ON Semiconductor Corporation（USA）
• Mitsubishi Electric Corporation（Japan）
• Fuji Electric Co., Ltd.（Japan）
• Littelfuse, Inc.（USA）
• Microchip Technology Inc.（USA）
• Texas Instruments Incorporated（USA）
• Toshiba Corporation（Japan）
• Renesas Electronics Corporation（Japan）
• ABB Ltd.（Switzerland）
• Analog Devices, Inc.（USA）
• Semikron（Germany）
• Coherent Corp.（USA）
• GeneSiC Semiconductor Inc.（USA）
• Power Integrations, Inc.（USA）

結論と提言

Silicon Carbide (SiC) Power Devices Market size was valued at USD 1.24 billion in 2023 and is poised to grow from USD 1.53 billion in 2024 to USD 8.41 billion by 2032, growing at a CAGR of 23.7% during the forecast period (2025-2032).

The global Silicon Carbide (SiC) Power Devices market is experiencing robust growth, driven by escalating demands for energy-efficient solutions, the rise in electric vehicle (EV) adoption, and the integration of renewable energy sources. SiC devices outperform traditional silicon counterparts by offering lower conduction and switching losses, enabling higher operational frequencies and temperatures for enhanced efficiency. This is particularly pertinent in the automotive sector, where SiC devices bolster EV performance by supporting higher voltages and thermal conditions, thus improving power conversion efficiency and driving range. Additionally, advancements in manufacturing processes, including enhanced crystal growth techniques and wafer-scale production, have reduced production costs, further encouraging the widespread implementation of SiC technology across diverse industrial applications amidst a global push for carbon reduction.

Top-down and bottom-up approaches were used to estimate and validate the size of the Silicon Carbide (Sic) Power Devices market and to estimate the size of various other dependent submarkets. The research methodology used to estimate the market size includes the following details: The key players in the market were identified through secondary research, and their market shares in the respective regions were determined through primary and secondary research. This entire procedure includes the study of the annual and financial reports of the top market players and extensive interviews for key insights from industry leaders such as CEOs, VPs, directors, and marketing executives. All percentage shares split, and breakdowns were determined using secondary sources and verified through Primary sources. All possible parameters that affect the markets covered in this research study have been accounted for, viewed in extensive detail, verified through primary research, and analyzed to get the final quantitative and qualitative data.

Silicon Carbide (Sic) Power Devices Market Segments Analysis

Global Silicon Carbide (SiC) Power Devices Market is segmented by Type, Voltage Range, Application and region. Based on Type, the market is segmented into SiC Discrete Devices and SiC Power Modules. Based on Voltage Range, the market is segmented into Low Voltage, Medium Voltage and High Voltage. Based on Application, the market is segmented into Automotive, Industrial, Consumer Electronics, Telecommunications, Energy and Power, Aerospace and Defense and Medical Devices. Based on region, the market is segmented into North America, Europe, Asia Pacific, Latin America and Middle East & Africa.

Driver of the Silicon Carbide (Sic) Power Devices Market

A significant factor propelling the growth of the global Silicon Carbide (SiC) Power Devices market is the rising need for energy-efficient power electronics. SiC devices provide numerous benefits over conventional silicon-based counterparts, such as enhanced efficiency, quicker switching capabilities, and the ability to operate at higher temperatures. This increasing demand spans multiple sectors, including automotive, aerospace, and industrial applications, which is resulting in greater adoption of SiC power devices. Additionally, government initiatives aimed at curbing carbon emissions and advocating for renewable energy sources further enhance the market's expansion, solidifying SiC power devices as a preferred choice for energy-conscious technologies.

Restraints in the Silicon Carbide (Sic) Power Devices Market

A significant challenge hindering the expansion of the global Silicon Carbide (SiC) Power Devices market is the elevated pricing associated with SiC power devices when compared to conventional silicon-based alternatives. This high cost stems from the intricate manufacturing processes required to produce SiC materials and the restricted availability of SiC wafer suppliers. Consequently, the uptake of SiC power devices is primarily confined to high-end applications that demand superior efficiency and rapid switching capabilities. While this high price point is likely to impede market growth in the near term, it is anticipated that costs will decrease as the market matures and evolves.

Market Trends of the Silicon Carbide (Sic) Power Devices Market

The global Silicon Carbide (SiC) Power Devices market is experiencing a significant upward trend, primarily driven by the surging demand for electric vehicles (EVs) and renewable energy systems. SiC power devices, known for their superior efficiency, thermal conductivity, and high-frequency performance, are increasingly favored over traditional silicon alternatives. The automotive sector's shift towards electrification is accelerating the integration of SiC technology into EV power electronics, enhancing performance and range. Furthermore, advancements in SiC manufacturing processes are reducing costs, further propelling market growth. As global initiatives towards decarbonization intensify, the SiC power devices market is poised for remarkable expansion.

Table of Contents

Introduction

• Objectives of the Study
• Scope of the Report
• Definitions

Research Methodology

• Information Procurement
• Secondary & Primary Data Methods
• Market Size Estimation
• Market Assumptions & Limitations

Executive Summary

• Global Market Outlook
• Supply & Demand Trend Analysis
• Segmental Opportunity Analysis

Market Dynamics & Outlook

• Market Overview
• Market Size
• Market Dynamics
  • Drivers & Opportunities
  • Restraints & Challenges
• Porters Analysis
  • Competitive rivalry
  • Threat of substitute
  • Bargaining power of buyers
  • Threat of new entrants
  • Bargaining power of suppliers

Key Market Insights

• Key Success Factors
• Degree of Competition
• Top Investment Pockets
• Market Ecosystem
• Market Attractiveness Index, 2024
• PESTEL Analysis
• Macro-Economic Indicators
• Value Chain Analysis
• Pricing Analysis
• Case Studies
• Technology Advancement
• Regulatory Landscape
• Patent Analysis

Global Silicon Carbide (SiC) Power Devices Market Size by Type & CAGR (2025-2032)

• Market Overview
• SiC Discrete Devices
• SiC Power Modules

Global Silicon Carbide (SiC) Power Devices Market Size by Voltage Range & CAGR (2025-2032)

• Market Overview
• Low Voltage
• Medium Voltage
• High Voltage

Global Silicon Carbide (SiC) Power Devices Market Size by Application & CAGR (2025-2032)

• Market Overview
• Automotive
• Industrial
• Consumer Electronics
• Telecommunications
• Energy and Power
• Aerospace and Defense
• Medical Devices

Global Silicon Carbide (SiC) Power Devices Market Size & CAGR (2025-2032)

• North America (Type, Voltage Range, Application)
  • US
  • Canada
• Europe (Type, Voltage Range, Application)
  • Germany
  • Spain
  • France
  • UK
  • Italy
  • Rest of Europe
• Asia Pacific (Type, Voltage Range, Application)
  • China
  • India
  • Japan
  • South Korea
  • Rest of Asia-Pacific
• Latin America (Type, Voltage Range, Application)
  • Brazil
  • Rest of Latin America
• Middle East & Africa (Type, Voltage Range, Application)
  • GCC Countries
  • South Africa
  • Rest of Middle East & Africa

Competitive Intelligence

• Top 5 Player Comparison
• Market Positioning of Key Players, 2024
• Strategies Adopted by Key Market Players
• Recent Developments in the Market
• Company Market Share Analysis, 2024
• Company Profiles of All Key Players
  • Company Details
  • Product Portfolio Analysis
  • Company's Segmental Share Analysis
  • Revenue Y-O-Y Comparison (2022-2024)

Key Company Profiles

• STMicroelectronics N.V. (Switzerland)
  • Company Overview
  • Business Segment Overview
  • Financial Updates
  • Key Developments
• Infineon Technologies AG (Germany)
  • Company Overview
  • Business Segment Overview
  • Financial Updates
  • Key Developments
• Wolfspeed, Inc. (USA)
  • Company Overview
  • Business Segment Overview
  • Financial Updates
  • Key Developments
• ROHM Co., Ltd. (Japan)
  • Company Overview
  • Business Segment Overview
  • Financial Updates
  • Key Developments
• ON Semiconductor Corporation (USA)
  • Company Overview
  • Business Segment Overview
  • Financial Updates
  • Key Developments
• Mitsubishi Electric Corporation (Japan)
  • Company Overview
  • Business Segment Overview
  • Financial Updates
  • Key Developments
• Fuji Electric Co., Ltd. (Japan)
  • Company Overview
  • Business Segment Overview
  • Financial Updates
  • Key Developments
• Littelfuse, Inc. (USA)
  • Company Overview
  • Business Segment Overview
  • Financial Updates
  • Key Developments
• Microchip Technology Inc. (USA)
  • Company Overview
  • Business Segment Overview
  • Financial Updates
  • Key Developments
• Texas Instruments Incorporated (USA)
  • Company Overview
  • Business Segment Overview
  • Financial Updates
  • Key Developments
• Toshiba Corporation (Japan)
  • Company Overview
  • Business Segment Overview
  • Financial Updates
  • Key Developments
• Renesas Electronics Corporation (Japan)
  • Company Overview
  • Business Segment Overview
  • Financial Updates
  • Key Developments
• ABB Ltd. (Switzerland)
  • Company Overview
  • Business Segment Overview
  • Financial Updates
  • Key Developments
• Analog Devices, Inc. (USA)
  • Company Overview
  • Business Segment Overview
  • Financial Updates
  • Key Developments
• Semikron (Germany)
  • Company Overview
  • Business Segment Overview
  • Financial Updates
  • Key Developments
• Coherent Corp. (USA)
  • Company Overview
  • Business Segment Overview
  • Financial Updates
  • Key Developments
• GeneSiC Semiconductor Inc. (USA)
  • Company Overview
  • Business Segment Overview
  • Financial Updates
  • Key Developments
• Power Integrations, Inc. (USA)
  • Company Overview
  • Business Segment Overview
  • Financial Updates
  • Key Developments

Conclusion & Recommendations