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世界のシリコンカーバイド(SiC)パワー半導体市場:コンポーネント(ディスクリート、モジュール、パワーIC)、エンドユーザー、地域別(2018年〜2023年)

Global Silicon Carbide Power Semiconductor Market - Segmented By Component (Discrete, Modules, Power Integrated Circuits) by End-User and Region - Growth, Trends and Forecast (2018 - 2023)

発行 Mordor Intelligence LLP 商品コード 704893
出版日 ページ情報 英文 91 Pages
納期: 即日から翌営業日
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本日の銀行送金レート: 1USD=113.36円で換算しております。
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世界のシリコンカーバイド(SiC)パワー半導体市場:コンポーネント(ディスクリート、モジュール、パワーIC)、エンドユーザー、地域別(2018年〜2023年) Global Silicon Carbide Power Semiconductor Market - Segmented By Component (Discrete, Modules, Power Integrated Circuits) by End-User and Region - Growth, Trends and Forecast (2018 - 2023)
出版日: 2018年08月18日 ページ情報: 英文 91 Pages
概要

世界のシリコンカーバイド(SiC)パワー半導体市場は、2018年から2023年の予測期間を通じて27.5%を超えるCAGRで推移することが予測されています。

当レポートでは、世界のシリコンカーバイド(SiC)パワー半導体市場を調査し、市場の概要、コンポーネント・エンドユーザー・地域別の市場規模の推移と予測、市場の成長要因および阻害要因の分析、市場機会、競合情勢、主要企業のプロファイルなど、包括的な情報を提供しています。

目次

第1章 イントロダクション

  • 主な調査成果
  • 市場の前提条件
  • 市場の定義
  • 主な所見

第2章 調査アプローチと方法論

第3章 エグゼクティブサマリー

第4章 市場力学

  • 市場の成長要因
    • 太陽光エネルギーとワイヤレス通信の需要の増加
    • エネルギー効率の高いバッテリー駆動式ポータブル機器の需要の高まり
  • 市場の阻害要因
    • 生産容量を超える消費者需要
    • 世界なシリコンウェハーの不足
  • ファイブフォース分析
    • 買い手の交渉力
    • 供給企業の交渉力
    • 新規参入業者の脅威
    • 代替品の脅威
    • 競争企業間の敵対関係
  • 産業バリューチェーン

第5章 世界のSiCパワー半導体市場:セグメント別

  • コンポーネント別
    • ディスクリート
    • モジュール
    • パワーIC
  • エンドユーザー別
    • 自動車
    • 家電
    • IT・通信
    • 軍事航空
    • 電力
    • 産業
    • その他
  • 地域別
    • 北米
    • 欧州
    • アジア太平洋地域
    • ラテンアメリカ
    • 中東・アフリカ

第6章 企業プロファイル

  • Infineon technologies AG
  • Texas instruments Inc
  • ST Microelectronics N.V
  • NXP semiconductor
  • ON Semiconductor Corporation
  • ルネサスエレクトロニクス
  • Broadcom limited
  • 日立パワーデバイス
  • 東芝
  • 三菱電機
  • 富士電機
  • Semikron International.
  • Cree Inc.

第7章 市場の投資分析

第8章 市場機会

目次
Product Code: 62914

The Silicon Carbide (SiC) Power Semiconductor market is expected to register a CAGR of over 27.5% during the forecast period 2018 - 2023. The report profiles the application of Silicon Carbide Power Semiconductors for various industries.

The silicon carbide (SiC) power semiconductor market is growing significantly due to its characteristics like enhanced features of power efficiency, low input and switching loss and high speed, enhanced portability are the other drivers guiding the growth of the SiC power semiconductor market in the future. The increasing demand for SiC-based photovoltaic cells and rising government investments, especially in growing economies, and the expanding application of solar energy are expected to propel market growth further. Apart from technological advantages, Silicon carbide power semiconductors are trending these days, due to increasing consumer interest towards electric vehicles and growing advancement in next-generation transistors. The growing advancement in SiC MOSFETs are impacting the future growth of SiC power semiconductor market.

However, with growth of consumer demand exceeding the factory capacity and global shortage of Silicon Wafer due to limited number of vendors could be some of the factors hindering the growth of the Silicon Carbide (SiC) power semiconductors market over the forecast period.

Power Integrated Circuits is expected to grow at a Significant Rate

The key features of a Silicon Carbide power integrated circuits like handling high voltage, high current over conventional Silicon based semiconductor technologies is a significant factor driving the growth of silicon carbide power integrated circuits over the forecast period. Their benefits of working in harsh environments has also increased their application in oil & gas drilling, industrial motors drives, space exploration, aviation and nuclear energy. Their rising adoption in the automotive industry, for an electric vehicle or multiplexed bus system with distributed power integrated circuits for control of lights, motors and air conditioning are also transforming the automotive sector. Due to their power efficiency characteristics, their applications are also growing in the power industry. The global power management integrated circuits market is expected to register a CAGR of 8.94% over the forecast period. Therefore, with so much of scope, Silicon carbide power integrated circuit market will grow significantly over the forecast period.

Asia Pacific Will Grow Significantly Over the Forecast Period in Silicon Carbide Power Semiconductor Market

Asia Pacific is estimated to dominate the market for SiC power semiconductor over the forecast period owing to increasing adoption of energy efficient projects and growing advancement in energy distribution system & Electric Vehicle (EV) infrastructure. The region is also dominating the global semiconductor market. The growing number of power projects coupled with the implementation of solar projects in the region is creating enormous demands for SiC power semiconductors. Feed-in tariff (FiT) schemes have been instrumental to solar PV growth, hence for SiC power semiconductor too, in Southeast Asia. In Thailand, which is by far the largest producer of solar energy in Southeast Asia due to strong government support, solar capacity has jumped in the past three years. Also, the growing government's solar energy initiative in Japan, India and China has led to an increasing need for solar power panels in the region. The region is also having the highest adoption EV models, as China is also the largest maker of electric vehicles. In 2016, it sold 507,000, including buses and commercial vehicles, according to the China Association of Automobile Manufacturers. Hence, the region will grow significantly over the forecast period.

Key Developments in The Market

Mar 2018: Cree, Inc. has acquired assets of Infineon Technologies AG Radio Frequency (RF) Power Business for approximately EUR 345 million. The transaction expands the Cree Wolfspeed business unit's wireless market opportunity. This business holds a leading market position offering transistors and MMICs (Monolithic Microwave Integrated Circuits) for wireless infrastructure radio frequency power amplifiers based on both LDMOS and Gallium Nitride on Silicon Carbide (GaN-on-SiC) technologies.

Jan 2018: Mitsubishi Electric Corporation announced that it has developed a 6.5 kV full silicon carbide (SiC) power semiconductor module that is believed to offer the world's highest power density (calculated from rated voltage and current) among power semiconductor modules rated from 1.7 kV to 6.5 kV.

Major Players: INFINEON TECHNOLOGIES AG, TEXAS INSTRUMENTS INC., STMICROELECTRONICS N.V., HITACHI POWER SEMICONDUCTOR DEVICE LTD., NXP SEMICONDUCTOR, FUJI ELECTRIC CO. LTD., SEMIKRON INTERNATIONAL GMBH, CREE INC., ON SEMICONDUCTOR CORPORATION, RENESAS ELECTRONIC CORPORATION, BROADCOM LIMITED, TOSHIBA CORPORATION, and MITSUBISHI ELECTRIC CORPORATION, among others.

Reasons to Purchase The Report

Impact of growth of silicon carbide power semiconductor on the market

Analysis of various perspectives of the market with the help of Porter's five forces analysis

The segments that are expected to dominate the market

Regional analysis of the market during the forecast period

Latest developments, market shares and strategies employed by the major market players and key innovators

3 months analyst support along with the Market Estimate sheet (in Excel)

Customization of the Report

This report can be customized to meet your requirements. Please connect with our representative, who will ensure you get a report that suits your needs.

Table of Contents

1. Introduction

  • 1.1 Key Deliverables of the Silicon Carbide Power Semiconductor Market Study
  • 1.2 Silicon Carbide Power Semiconductor Market Study Assumptions
  • 1.3 Silicon Carbide Power Semiconductor Market Definition
  • 1.4 Key Findings of the Silicon Carbide Power Semiconductor Market Study

2. Research Approach and Methodology

3. Executive Summary

4. Silicon Carbide Power Semiconductor Market Dynamics

  • 4.1 Silicon Carbide Power Semiconductor Market Overview
  • 4.2 Factors Driving the Silicon Carbide Power Semiconductor Market
    • 4.2.1 Increasing Demand of Solar Energy and Wireless Communications
    • 4.2.2 Growing Demand for Energy-Efficient Battery-Powered Portable Devices
  • 4.3 Factors Restraining the Silicon Carbide Power Semiconductor Market
    • 4.3.1 Consumer Demand Exceeding Factory Capacity
    • 4.3.2 Silicon Wafer Shortages Globally
  • 4.4 Industry Attractiveness - Porter's Five Industry Forces Analysis
    • 4.4.1 Bargaining Power of Suppliers
    • 4.4.2 Bargaining Power of Consumers
    • 4.4.3 Threat of New Entrants
    • 4.4.4 Threat of Substitute Products or Services
    • 4.4.5 Competitive Rivalry among Existing Competitors
  • 4.5 Industry Value Chain

5. Global Silicon Carbide Power Semiconductor Market Segmentation

  • 5.1 Silicon Carbide Power Semiconductor Market By Component
    • 5.1.1 Discrete
    • 5.1.2 Modules
    • 5.1.3 Power Integrated Circuits
  • 5.2 Silicon Carbide Power Semiconductor Market By End-user Applications
    • 5.2.1 Automotive
    • 5.2.2 Consumer Electronic
    • 5.2.3 IT & Telecommunication
    • 5.2.4 Military & Aerospace
    • 5.2.5 Power
    • 5.2.6 Industrial
    • 5.2.7 Others
  • 5.3 Silicon Carbide Power Semiconductor Market By Geography
    • 5.3.1 North America
    • 5.3.2 Europe
    • 5.3.3 Asia-Pacific
    • 5.3.4 Latin America
    • 5.3.5 The Middle-East & Africa

6. Silicon Carbide Power Semiconductor Market Companies

  • 6.1 Infineon technologies AG
  • 6.2 Texas instruments Inc
  • 6.3 ST Microelectronics N.V
  • 6.4 NXP semiconductor
  • 6.5 ON Semiconductor Corporation
  • 6.6 Renesas electronic corporation
  • 6.7 Broadcom limited
  • 6.8 Hitachi Power Semiconductor Device, Ltd.
  • 6.9 Toshiba Corporation
  • 6.10 Mitsubishi Electric Corporation
  • 6.11 Fuji Electric Co. Ltd
  • 6.12 Semikron International.
  • 6.13 Cree Inc.

List Not Exhaustive

7. Investment Analysis of Silicon Carbide Power Semiconductor Market

8. Opportunities in Global Silicon Carbide Power Semiconductor Market

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