3D NANDフラッシュメモリの世界市場予測（2022年～2027年）

世界の3D NANDフラッシュメモリの市場規模は、2020年に312億8,900万米ドルとなりました。市場を牽引する要因には、既存の技術では必要な要件を満たすことができないため、この技術に対する需要が高まっていることなどが挙げられます。

当レポートでは、世界の3D NANDフラッシュメモリ市場について調査し、市場規模や予測、COVID-19の影響、市場の促進要因および課題、市場動向、セグメント別の市場分析、競合情勢、主要企業のプロファイルなどの体系的な情報を提供しています。

目次

第1章 イントロダクション

• 市場概要
• COVID-19の影響
• 市場の定義
• 市場セグメンテーション

第2章 調査手法

• 調査データ
• 前提条件

第3章 エグゼクティブサマリー

• 調査のハイライト

第4章 市場力学

• 市場促進要因
• 市場抑制要因
• ポーターのファイブフォース分析
  • 供給企業の交渉力
  • 買い手の交渉力
  • 新規参入者の脅威
  • 代替品の脅威
  • 競争企業間の敵対関係
• 業界のバリューチェーン分析

第5章 3D NANDフラッシュメモリ市場：技術別

• シングルレベルセル（SLC）
• マルチレベルセル（MLC）
• トリプルレベルセル（TLC）

第6章 3D NANDフラッシュメモリ市場：最終用途業界別

• 自動車
• 家庭用電化製品
• 通信
• その他

第7章 3D NANDフラッシュメモリ市場：地域別

• イントロダクション
• 南北アメリカ
  • 米国
  • その他
• 欧州、中東・アフリカ
  • ドイツ
  • フランス
  • 英国
  • その他
• アジア太平洋地域
  • 中国
  • 日本
  • インド
  • 韓国
  • 台湾
  • その他

第8章 競合情勢

• 主要企業と戦略分析
• 新興企業と市場の有利性
• 合併、買収、契約、コラボレーション
• ベンダーの競合マトリックス

第9章 企業プロファイル

• Intel Corporation
• Micron Technology Inc.
• Sk Hynix Inc.
• Samsung
• Western Digital Corporation
• Toshiba Electronic Devices & Storage Corporation
• Changiiang Storage Technology Co., Ltd.
• ATP Electronics Inc.

The 3D NAND flash memory market is estimated to be valued at US$31.289 billion in 2020. The 3D NAND flash memory technology has come into the picture due to a continuous increase in demand for data storage, it offers more storage and has a faster processing speed at a cheaper cost.

There is an extensive demand for this technology as the existing technologies are not able to fulfil the desired requirements. The 3D NAND here proves very efficient by giving a faster processing speed in a more compact size along with minimum power consumption.

By end-user, the 3D NAND Flash Memory market is segmented into automotive, consumer electronics, communications, and others. The consumer electronics segment shows tremendous growth resulting from an increase in disposable income, and due to rapid technological developments in the smartphone market, demands for faster processing at a minimum space are increasing. Many companies are spending heavily on R&D which shows the growth of these devices at a greater pace during the forecasted period.

By geography, the 3D NAND Flash Memory market is segmented into North America, South America, Europe, the Middle East, Africa, and Asia Pacific. The Asia Pacific region is expected to witness a significant increase in demand for the 3D NAND market due to an increase in investments in data centers. Simultaneously, the increase in production of smartphones & automobiles in China and India acts as a driver which is expected to push the demand for 3D NAND during the forecasted period.

Key Developments:

• July 2022: Micron Technology, Inc. announced that it has started volume manufacturing of the world's first 232-layer NAND. In comparison to earlier generations of Micron NAND, it offers the most industry-leading areal density, more capacity, and enhanced energy efficiency, enabling best-in-class support for the most data-intensive use scenarios from client to cloud. With the help of this NAND's ground-breaking capabilities, customers will be able to offer more creative solutions for data centers, lighter, slimmer laptops, the newest mobile devices, and the intelligent edge.
• September 2022: Apple has approved Yangtze Memory Technologies Corp.'s 3D NAND flash to be used in the next iPhone 14 devices. Apple is evaluating alternative NAND memory suppliers for the iPhone in an effort to diversify its supply chain and boost its resilience in the face of unexpected disruptions. The decision is a big milestone for YMTC and will guarantee a continuous supply of flash memory for Apple's upcoming products. Yangtze will provide 3D NAND for the next iPhone 14 models. The latest series of six-plane 3D NAND chips from YMTC, which have a 2400 MT/s interface speed and the firm's Xtacking 3.0 architecture, are among the company's competitive upcoming products. In the future, these processors could be able to power some of the finest SSDs.
• September 2022: Samsung Electronics has started producing on a new production line NAND in South Korea. NAND flash is being produced in the new production line in Pyeongtaek, the biggest chip manufacturing facility ever constructed by Samsung. According to Samsung, the Pyeongtaek campus, which is home to 60,000 employees, is almost as big as the combined 1.45 million square metres of the Giheung and 1.6 million square metres of the Hwaseong campuses.The Pyeongtaek site is becoming Samsung's primary manufacturing base for cutting-edge semiconductors, including the smallest 14-nanometer (nm) DRAM and cutting-edge V-NAND to sub-5nm logic solutions, according to the president and CEO of Samsung's DS division.

Product Offering:

• Intel QLC 3D NAND: SSDs using Intel QLC 3D NAND are made to handle massive data and storage capacity requirements. Based on QLC NAND on cell technology, which has been tested for more than 3 decades is known for its dependability and excellence. Intel's QLC benefits from novel vertical floating gate technology. SSDs are highly effective, because they have 64 layers and very small cells. It has large-capacity storage that is affordable. Intel QLC 3D NAND Innovation provides a scalable, low-cost a method to reduce the size of tri-level cell (TLC) SSDs and HDDs footprints of a system.
• Micron 3D NAND Flash Memory: Using floating gate cells, Micron's unique 3D NAND flash memory has a special architecture that overcomes density restrictions to allow endurance and performance that are superior to the norm NAND planar architecture. Micron's 32 cell 3D NAND stacks 256Gb multilevel cell die is achieved by stacking layers vertically can allow for SSDs larger than 2TB in gum stick size of storage, which is three times as much than current planar NAND remedies.
• Samsung 3bit 3D V-NAND technology: The 3bit 3D V-NAND technology from Samsung includes an unique structure that layers 32 levels of 3 bit cells instead of attempting to shorten the cells' length & to accommodate the ever-shrinking form factors. With this the density of the 3D V-NAND architecture is double that of a small-footprint 2D planar NAND with the same functionality. The 3bit V-NAND flash has surpassed the threshold of costs in dollars per gigabit for being capable of storing 3 bits per cell over 2 bits per cell when compared to Samsung's 2-bit 32-layer V-NAND technology.

Segmentation:

• By Technology

Single Level Cell (SLC)

Multi-Level Cell (MLC)

Triple Level Cell (TLC)

• By End-User Industry

Automotive

Consumer Electronics

Communications

Others

• By Geography

Americas

• USA
• Others

Europe Middle East and Africa

• Germany
• France
• United Kingdom
• Others

Asia Pacific

• China
• Japan
• India
• South Korea
• Taiwan
• Others

TABLE OF CONTENTS

1. INTRODUCTION

• 1.1. Market Overview
• 1.2. COVID-19 Scenario
• 1.3. Market Definition
• 1.4. Market Segmentation

2. RESEARCH METHODOLOGY

• 2.1. Research Data
• 2.2. Assumptions

3. EXECUTIVE SUMMARY

• 3.1. Research Highlights

4. MARKET DYNAMICS

• 4.1. Market Drivers
• 4.2. Market Restraints
• 4.3. Porter's Five Forces Analysis
  • 4.3.1. Bargaining Power of Suppliers
  • 4.3.2. Bargaining Power of Buyers
  • 4.3.3. Threat of New Entrants
  • 4.3.4. Threat of Substitutes
  • 4.3.5. Competitive Rivalry in the Industry
• 4.4. Industry Value Chain Analysis

5. 3D NAND FLASH MEMORY MARKET BY TECHNOLOGY

• 5.1. Single Level Cell (SLC)
• 5.2. Multi-Level Cell (MLC)
• 5.3. Triple Level Cell (TLC)

6. 3D NAND FLASH MEMORY MARKET BY END-USER INDUSTRY

• 6.1. Automotive
• 6.2. Consumer Electronics
• 6.3. Communications
• 6.4. Others

7. 3D NAND FLASH MEMORY MARKET BY GEOGRAPHY

• 7.1. Introduction
• 7.2. Americas
  • 7.2.1. USA
  • 7.2.2. Others
• 7.3. Europe Middle East and Africa
  • 7.3.1. Germany
  • 7.3.2. France
  • 7.3.3. United Kingdom
  • 7.3.4. Others
• 7.4. Asia Pacific
  • 7.4.1. China
  • 7.4.2. Japan
  • 7.4.3. India
  • 7.4.4. South Korea
  • 7.4.5. Taiwan
  • 7.4.6. Others

8. COMPETITIVE INTELLIGENCE

• 8.1. Major Players and Strategy Analysis
• 8.2. Emerging Players and Market Lucrativeness
• 8.3. Mergers, Acquisitions, Agreements, and Collaborations
• 8.4. Vendor Competitiveness Matrix

9. COMPANY PROFILES

• 9.1. Intel Corporation
• 9.2. Micron Technology Inc.
• 9.3. Sk Hynix Inc.
• 9.4. Samsung
• 9.5. Western Digital Corporation
• 9.6. Toshiba Electronic Devices & Storage Corporation
• 9.7. Changiiang Storage Technology Co., Ltd.
• 9.8. ATP Electronics Inc.