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市場調査レポート
商品コード
1800862
GaNパワーデバイスの市場レポート:デバイスタイプ別、電圧範囲別、用途別、最終用途産業別、地域別、2025~2033年GaN Power Device Market Report by Device Type, Voltage Range, Application, End-Use Industry, and Region 2025-2033 |
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GaNパワーデバイスの市場レポート:デバイスタイプ別、電圧範囲別、用途別、最終用途産業別、地域別、2025~2033年 |
出版日: 2025年08月01日
発行: IMARC
ページ情報: 英文 143 Pages
納期: 2~3営業日
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世界のGaNパワーデバイスの市場規模は、2024年に4億5,100万米ドルに達しました。今後、IMARC Groupは、2033年には47億620万米ドルに達し、2025~2033年にかけて28.28%の成長率(CAGR)を示すと予測しています。同市場は、エネルギー効率に対する需要の高まり、電気自動車(EV)市場における最近の進歩、半導体産業における技術革新の高まり、再生可能エネルギー技術の広範な採用、電子機器の小型化などにより、急速に拡大しています。
エネルギー効率に対する需要の高まり
エネルギー効率化への急激なシフトは、窒化ガリウム(GaN)パワーデバイス市場の成長を促す大きな要因です。窒化ガリウム(GaN)パワーデバイスは、シリコンベースよりも高い電圧、周波数、温度で動作することで知られ、より効率的な電力変換につながります。例えば、Efficient Power Conversion(EPC)は、窒化ガリウム(GaN)FETを搭載したスケーラブルな1.5kW、2相48V-12VのデモボードEPC9137を発売しました。このデモボードの設計はスケーラブルで、2つのコンバータを並列接続して3 kW、3つのコンバータを並列接続して4.5 kWを実現できます。2025年までに、世界中で販売される自動車の10台に1台が48Vマイルドハイブリッドになると予測されています。これらのハイブリッドシステムは、燃費を向上させ、4倍の電力を供給し、二酸化炭素排出量を削減するため、48V-12V双方向コンバータを必要とし、その出力は1.5kW~6kWに及びます。EPC eGaN FETは、250kHzのスイッチング周波数で97%の効率で動作することができ、最大スイッチング周波数100kHzではインダクタ電流の制限により600W/相が限界であるシリコンベースのソリューションと比較して、800W/相を可能にします。この動向は、エネルギー消費とカーボンフットプリントの削減を目的とした政府の規制と政策によって支えられており、GaNパワーデバイス市場をさらに促進しています。
電気自動車(EV)市場の成長
活況を呈するEV市場は、GaNパワーデバイスの成長にとって重要な触媒です。これらのデバイスは、車載充電器、DC/DCコンバータ、電力インバータなどの用途でEVに不可欠です。GaNの優れた効率と高い電力密度はEVに最適で、システムの軽量化、小型化、信頼性の向上に貢献します。例えば、IQE plcは、GaN企業のVisICとの戦略的提携により、EVインバーターに使用される高信頼性GaN Dモード(D-Mode GaN)パワー製品を開発しました。両社は、EVの走行距離の延長と充電時間の短縮を実現する200mm DモードGaNパワーエピウェハーを開発し、電気自動車の普及における2つの最も重要な課題に対処しました。さらにEPCは、EPC9194 GaNベースのインバータリファレンスデザインの開発を発表し、重量あたりの電力を倍増させながら、モータ駆動システムの効率、航続距離、トルクを向上させました。14V~60Vの入力電源電圧範囲で動作し、最大60Apk(40ARMS)の出力電流を供給します。この電圧範囲と電力レベルにより、このソリューションは、eバイク、eスクーター、ドローン、ロボット、DCサーボモーターなど、さまざまな3相BLDCモータードライブに最適です。
半導体技術の進歩
半導体材料と製造プロセスにおける継続的な改善とブレークスルーは、GaNパワーデバイスのコストを大幅に削減し、性能を向上させました。例えば、半導体ソリューションの大手サプライヤーであるMACOM Technology Solutions Inc.は、MAPC-A1000とMAPC-A1100という最初の2つの新製品の導入とともに、新しい炭化ケイ素上の窒化ガリウム(GaN-on-SiC)パワーアンプ製品ラインを開発しました。MAPC-A1000は、30MHz~2.7GHzで動作するように設計された高出力GaN-on-SiCアンプです。MAPC-A1000は、30MHzから2.7GHzで動作するように設計された大電力GaN-on-SiCアンプで、入力マッチを内蔵しているため、顧客の設計作業を簡素化します。また、2.2GHzの同時帯域幅で動作するように設計された回路でテストした場合、500MHzから2.7GHzまで50%以上の効率で25W(44dBm)以上を供給することができます。また、MAPC-A1100は3.5GHzまで動作するように設計された高出力GaN-on-SiCアンプです。このデバイスは、エアキャビティセラミックパッケージで少なくとも65W(48.1dBm)の出力電力レベルのCWおよびパルス動作をサポートすることができます。これらの進歩は、予測期間中の市場成長を後押しすると期待されます。
The global GaN power device market size reached USD 451.0 Million in 2024. Looking forward, IMARC Group expects the market to reach USD 4,706.2 Million by 2033, exhibiting a growth rate (CAGR) of 28.28% during 2025-2033. The market is rapidly expanding, driven by the growing demand for energy efficiency, recent advancements in electric vehicle (EV) market, rising innovations in the semiconductor industry, widespread adoption of renewable energy technology, and the ongoing miniaturization of electronics.
Increasing Demand for Energy Efficiency
The sudden shift towards energy efficiency is a major factor driving the gallium nitride (GaN) power devices market growth. They are known for their ability to operate at higher voltages, frequencies, and temperatures than silicon-based counterparts, leading to more efficient power conversion. For instance, Efficient Power Conversion (EPC) launched EPC9137, a scalable 1.5 kW, two-phase 48 V - 12 V demonstration board powered by gallium nitride (GaN) FETs. The design of this demonstration board is scalable as two converters can be paralleled to achieve 3 kW, or three converters can be paralleled to achieve 4.5 kW. By 2025, one of every ten vehicles sold across the globe is projected to be a 48 V mild hybrid. These hybrid systems boost fuel efficiency, deliver four times the power, and reduce carbon dioxide emissions, requiring a 48V - 12V bidirectional converter, with power ranging from 1.5 kW to 6 kW. EPC eGaN FETs can operate with 97% efficiency at 250 kHz switching frequency, enabling 800 W/phase compared to silicon-based solutions, which are limited to 600 W/phase due to the limitation on the inductor current at 100 kHz maximum switching frequency. This trend is supported by governmental regulations and policies aimed at reducing energy consumption and carbon footprints, further propelling the market for GaN power devices.
Growth in the Electric Vehicle (EV) Market
The booming EV market is a significant catalyst for the growth of GaN power devices. These devices are critical in EVs for applications such as onboard chargers, DC/DC converters, and power inverters. GaN's superior efficiency and high-power density is ideal for EVs, contributing to lighter, smaller, and more reliable systems. For instance, IQE plc, in a strategic collaboration with GaN company VisIC, developed high-reliability GaN D-Mode (D-Mode GaN) power products for use in EV inverters. They developed 200mm D-Mode GaN power epiwafers for longer ranges and faster charging times for EVs, addressing two of the most significant challenges in electric vehicle adoption. Moreover, EPC announced the development of the EPC9194 GaN-based inverter reference design that enhances motor drive system efficiency, range, and torque while doubling the power per weight. It operates from an input supply voltage range of 14 V to 60 V and delivers up to 60 Apk (40 ARMS) output current. This voltage range and power level make the solution ideal for a variety of 3-Phase BLDC motor drives, including eBikes, eScooters, drones, robots, and DC servo motors.
Advancements in Semiconductor Technology
Continuous improvements and breakthroughs in semiconductor materials and manufacturing processes have significantly reduced the cost and improved the performance of GaN power devices. For instance, MACOM Technology Solutions Inc. ("MACOM"), a leading supplier of semiconductor solutions, developed a new gallium nitride on silicon carbide (GaN-on-SiC) power amplifier product line, along with the introduction of the first two new products, the MAPC-A1000 and the MAPC-A1100. The MAPC-A1000 is a high-power GaN-on-SiC amplifier designed to operate between 30 MHz and 2.7 GHz. It integrates an input match, which simplifies the customer's design-in effort. It can also deliver more than 25 W (44dBm) at greater than 50% efficiency from 500 MHz to 2.7 GHz when tested in a circuit designed for operation over 2.2 GHz simultaneous bandwidth. Along with this, the MAPC-A1100 is a high-power GaN-on-SiC amplifier that is designed to operate up to 3.5 GHz. The device is capable of supporting CW and pulsed operations with output power levels of at least 65 W (48.1dBm) in an air cavity ceramic package. These advancements are expected to bolster the market growth over the forecasted period.
According to the GaN power device market analysis, the power device sector specializes in dealing with applications that demand efficient power conversion and management. It involves power supply, inverters, and converters for industries, such as renewable energy, automotive, industrial, and consumer electronics. GaN power devices are praised for their efficiency, excellent thermal conductivity, and ability to operate at greater frequencies and temperatures.
In accordance with the GaN power device market segmentation, radio frequency (RF) power devices are used for applications that demand the generation and management of high-frequency signals. It is required in telecommunications devices, like cellular base stations, satellite communications, and radar systems, including those used in military and defense applications. GaN RF power devices are renowned for their great power density, efficiency, and reliability at high frequencies.
According to the GaN power device market statistics, the <200-volt category emphasizes low to medium-power applications in consumer electronics, mobile devices, and automotive subsystems. It is suitable for providing quick charging for cellphones, laptops, and other portable devices. Their higher efficiency and thermal performance allow for lighter, compact, and more energy-efficient power adapters and converters, making them increasingly popular in the consumer electronics sector.
In accordance with the GaN power device market analysis, the 200-600 volt GaN power device covers a wide range of applications, including electric vehicles (EVs), renewable energy systems, and industrial power supply. It is used in EV onboard chargers, DC/DC converters, and solar inverters to increase efficiency, reduce size, and regulate heat, thereby boosting the GaN power device market recent developments.
According to the GaN power device market overview, the >600-volt category is widely utilized for high-power applications, such as industrial motors, grid infrastructure, and high-voltage direct current (HVDC) transmission systems. It is regarded for its capacity to withstand high voltages while minimizing losses and increasing efficiency. Furthermore, GaN's ability to function effectively at high voltages makes it ideal for applications requiring strong power handling capabilities, such as industrial machinery and grid-scale power conversion.
In line with this GaN power device market outlook, the power drives segment caters to applications involving the control and management of electric motors and drives. It includes electric vehicles (EVs), industrial automation systems, and high-performance computing cooling systems. GaN's exceptional efficiency and high switching frequencies that enable compact, lightweight, and energy-efficient designs for motor drives are positively influencing the GaN power device market drivers.
In the power supply systems segment, GaN power devices are improving the design and functionality of power supply units (PSUs), adapters, and converters across consumer electronics, telecommunications, and data centers. Their inherent properties, such as low on-resistance and high thermal conductivity, allow for smaller, lighter, and more energy-efficient power supplies to operate at higher frequencies with reduced heat generation, propelling the GaN power device market share.
The radio frequency (RF) based systems segment focuses on applications requiring high-frequency signal generation and amplification, such as cellular base stations, radar systems, satellite communications, and RF heating. They are lauded for their high-power density, efficiency, and reliability at microwave and millimeter-wave frequencies, enabling more compact and energy-efficient RF systems.
In the telecommunications industry, GaN power devices enhance network efficiency and capacity for the deployment of base stations for cellular networks, including the expansion of fifth-generation (5G) technology. Moreover, they provide the ability to handle high power densities and operate efficiently at high frequencies, which enables telecommunications equipment to support increased data traffic and provide faster and more reliable wireless communication.
The automotive segment is witnessing a significant transformation with the adoption of GaN power devices, especially in electric vehicles (EVs) and hybrid systems. It is utilized in EV powertrains, onboard chargers, DC/DC converters, and power inverters, offering higher efficiency, reduced size, and weight advantages over traditional silicon-based components. Furthermore, the ongoing shift towards electrification to meet stringent environmental regulations and enhance vehicle performance is positively influencing the future of the GaN power device market.
According to the GaN power device market trends, it plays a pivotal role in the renewable power generation sector for solar photovoltaic (PV) inverters and wind power converters. Their superior efficiency and ability to operate at high frequencies enable more compact and cost-effective renewable energy systems. Moreover, the sudden shift towards sustainable energy sources, boosting the use of GaN technology to maximize the conversion efficiency of renewable power systems, is enhancing the GaN power device market demand.
In the military, aerospace, and defense industries, GaN power devices are crucial for applications that require high power and reliability in harsh environments, such as radar systems, satellite communications, and electronic warfare. Moreover, the robustness and high performance of GaN under extreme conditions offer significant advantages in various critical applications to ensure operational effectiveness and reliability.
The consumer electronics segment leverages GaN power devices to meet the growing demand for smaller, more efficient, and powerful electronic devices. They enable compact power adapters, fast charging technologies, and efficient power management solutions for smartphones, laptops, wearables, and smart home devices. Moreover, the continuous push towards miniaturization and the need for high-performance electronics are providing a thrust to the GaN power device market growth.
The report has also provided a comprehensive analysis of all the major regional markets, which include North America (the United States and Canada); Asia Pacific (China, Japan, India, South Korea, Australia, Indonesia, and others); Europe (Germany, France, the United Kingdom, Italy, Spain, Russia, and others); Latin America (Brazil, Mexico, and others); and the Middle East and Africa.
The Asia Pacific region is growing rapidly, attributed to its robust manufacturing base, significant investments in technology and infrastructure, and the rapid growth of end-use industries, such as automotive, consumer electronics, and renewable energy. Countries like China, Japan, and South Korea are at the forefront of electric vehicle (EV) production and telecommunications infrastructure, coupled with the deployment of 5G networks. For example, China accounted for 58% of global sales of electric vehicles (EVs) and a mammoth 70% of total EV production.
Europe's GaN power device market is driven by the region's strong emphasis on energy efficiency, renewable energy, and the automotive sector, owing to the rising shift towards electric vehicles. Moreover, the European Union's stringent regulations on carbon emissions and energy consumption encourage the adoption of advanced technologies like GaN. For instance, the European Parliament has adopted the European Climate Law, which raises the EU's target of reducing net greenhouse gas emissions by at least 55% by 2030 and making climate neutrality by 2050 legally binding.
North America is a key market for GaN power devices, characterized by high technological adoption rates, advanced research and development (R&D) capabilities, and a well-established telecommunications and automotive industry. The United States plays a pivotal role in the development of GaN technology, supported by the presence of leading semiconductor companies and research institutions.
The Latin American market for GaN power devices is emerging, driven by increasing investments in telecommunications, renewable energy, and automotive sectors. Moreover, the rising focus on sustainable development and energy efficiency, which presents opportunities for the expansion of GaN power device applications, is contributing to the market growth.
The Middle East and Africa (MEA) region is witnessing a growing interest in GaN power devices in applications related to renewable energy, telecommunications, and infrastructure development. Moreover, countries in the MEA region are increasingly investing in solar energy projects and infrastructure modernization, driving the demand for efficient power conversion technologies.
(Please note that this is only a partial list of the key players, and the complete list is provided in the report.)