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High-k・CVD ALD金属前駆体市場:技術別、最終用途別、地域別、2024-2032年High-k and CVD ALD Metal Precursors Market by Technology (Interconnect, Capacitor/Memory, Gates), End Use (Consumer Electronics, Aerospace and Defense, IT and Telecommunication, Industrial, Automotive, Healthcare, and Others), and Region 2024-2032 |
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High-k・CVD ALD金属前駆体市場:技術別、最終用途別、地域別、2024-2032年 |
出版日: 2024年01月30日
発行: IMARC
ページ情報: 英文 148 Pages
納期: 2~3営業日
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世界のHigh-k・CVD ALD金属前駆体市場規模は、2023年に6億1,880万米ドルに達しました。今後、IMARC Groupは、市場は2032年までに11億2,240万米ドルに達し、2024年から2032年の間に6.63%の成長率(CAGR)を示すと予測しています。コンシューマーエレクトロニクスの販売増加、自律走行車や電気自動車(EV)の需要増加、さまざまな医療用画像処理装置におけるHigh-k・CVD ALD金属前駆体の使用拡大などが、市場を牽引する主な要因となっています。
High-k(高誘電率)は、トランジスタのゲート絶縁膜として使用され、静電容量を向上させ、デバイスの性能を高めます。一方、CVD(化学気相成長法)ALD(原子層堆積法)は、金属前駆体を用いて基板上に薄膜を堆積させる技術です。High-k・CVD ALD金属前駆体は、チタン、タンタル、タングステンなどを含む様々な金属を堆積させるために半導体技術で利用される材料です。これらは、ダイナミックランダムアクセスメモリ(DRAM)やフラッシュメモリデバイスなど、さまざまなメモリデバイスの製造に使用されます。現在、デバイスの小型化動向の高まりが、世界中でHigh-k・CVD ALD金属前駆体の需要を喚起しています。
高性能でエネルギー効率の高い電子機器へのニーズが高まっています。これは、スマートフォン、ラップトップ、タブレット、ゲーム機、カメラ、テレビの販売台数の増加と相まって、世界中でHigh-k・CVD ALD金属前駆体の需要を牽引する主要因の一つとなっています。さらに、再生可能エネルギーの利用拡大が、電池や太陽電池などのエネルギー貯蔵・変換デバイスにおけるHigh-k・CVD ALD金属前駆体の需要にプラスの影響を与えています。さらに、High-k・CVD ALD金属前駆体は、効率を改善し、デバイスのサイズと重量を減らすために自動車産業で採用されています。カメラ、レーダー、ライダー、テレマティクスシステムなどのADAS(先進運転支援システム)や、ディスプレイ、オーディオシステム、ナビゲーションシステムなどのインフォテインメントシステムに使用され、性能を高めています。High-k・CVD ALD金属前駆体は、車線逸脱警告システムやアダプティブクルーズコントロールなどの先進安全システムにも利用され、感度と応答時間を向上させています。これは、急速な都市化と所得水準の上昇により自律走行車や電気自動車(EV)の販売が増加していることと相まって、市場の成長に寄与しています。これとは別に、X線、コンピュータ断層撮影(CT)スキャナ、グルコースセンサなど、さまざまな医療用イメージングデバイスやバイオメディカルセンサにおけるHigh-k・CVD ALD金属前駆体の使用量の増加が、市場に明るい見通しをもたらしています。
The global high-k and CVD ALD metal precursors market size reached US$ 618.8 Million in 2023. Looking forward, IMARC Group expects the market to reach US$ 1,122.4 Million by 2032, exhibiting a growth rate (CAGR) of 6.63% during 2024-2032. The increasing sales of consumer electronics, rising demand for autonomous and electric vehicles (EVs), and the growing use of high-k and CVD ALD metal precursors in various medical imaging devices represent some of the key factors driving the market.
High dielectric constant (High-K) is used as gate dielectrics in transistors to improve the capacitance and enhance the performance of the device. On the other hand, chemical vapor deposition (CVD) atomic layer deposition (ALD) is a technique that relies on metal precursors to deposit thin films onto a substrate. High-k and CVD ALD metal precursors are materials utilized in the semiconductor technology to deposit various metals, including titanium, tantalum, tungsten, and others. They are used in the manufacturing of various memory devices, such as dynamic random access memory (DRAM) and flash memory devices. At present, the rising trend of device miniaturization is catalyzing the demand for high-k and CVD ALD metal precursors across the globe.
There is an increase in the need for high performance and energy efficient electronic devices. This, coupled with the rising sales of smartphones, laptops, tablets, gaming consoles, cameras, and television, represents one of the major factors driving the demand for high-k and CVD ALD metal precursors around the world. Moreover, the growing use of renewable energy sources is positively influencing the demand for high-k and CVD ALD metal precursors in energy storage and conversion devices, such as batteries and solar cells. In addition, high-k and CVD ALD metal precursors are employed in the automotive industry to improve the efficiency and reduce the size and weight of devices. They are used in advanced driver assistance systems (ADAS), such as cameras, radar, lidar, telematics systems, and infotainment systems, like displays, audio systems, and navigation systems to enhance the performance. High-k and CVD ALD metal precursors are also utilized in advanced safety systems, including lane departure warning systems and adaptive cruise control, to improve the sensitivity and response time. This, in confluence with the increasing sales of autonomous and electric vehicles (EVs) on account of rapid urbanization and inflating income levels, is contributing to the market growth. Apart from this, the rising usage of high-k and CVD ALD metal precursors in various medical imaging devices and biomedical sensors, such as X-ray, computed tomography (CT) scanners, and glucose sensors, is creating a positive outlook for the market.
IMARC Group provides an analysis of the key trends in each segment of the global high-k and CVD ALD metal precursors market, along with forecasts at the global, regional, and country level from 2024-2032. Our report has categorized the market based on technology and end use.
Interconnect
Capacitor/Memory
Gates
The report has provided a detailed breakup and analysis of the high-k and CVD ALD metal precursors market based on the technology. This includes interconnect, capacitor/memory, and gates. According to the report, interconnect represented the largest segment.
Consumer Electronics
Aerospace and Defense
IT and Telecommunication
Industrial
Automotive
Healthcare
Others
A detailed breakup and analysis of the high-k and CVD ALD metal precursors market based on the end use has also been provided in the report. This includes consumer electronics, aerospace and defense, IT and telecommunication, industrial, automotive, healthcare, and others. According to the report, consumer electronics accounted for the largest market share.
North America
United States
Canada
Asia-Pacific
China
Japan
India
South Korea
Australia
Indonesia
Others
Europe
Germany
France
United Kingdom
Italy
Spain
Russia
Others
Latin America
Brazil
Mexico
Others
Middle East and Africa
The report has also provided a comprehensive analysis of all the major regional markets, which include North America (the United States and Canada); Asia Pacific (China, Japan, India, South Korea, Australia, Indonesia, and others); Europe (Germany, France, the United Kingdom, Italy, Spain, Russia, and others); Latin America (Brazil, Mexico, and others); and the Middle East and Africa. According to the report, Asia Pacific was the largest market for high-k and CVD ALD metal precursors. Some of the factors driving the Asia Pacific high-k and CVD ALD metal precursors market included the increasing R&D activities, rising demand for fabricating semiconductor devices, the growing sales of autonomous and electric vehicles, etc.
The report has also provided a comprehensive analysis of the competitive landscape in the global high-k and CVD ALD metal precursors market. Detailed profiles of all major companies have also been provided. Some of the companies covered include Adeka Corporation, Dow Inc., Merck KGaA, Nanmat Technology Co. Ltd., Strem Chemicals Inc. (Ascensus Specialties LLC), Tri Chemical Laboratories Inc., etc.