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市場調査レポート
商品コード
1247455
SiCパワー半導体の世界市場-2023-2030Global SiC Power Semiconductor Market - 2023-2030 |
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SiCパワー半導体の世界市場-2023-2030 |
出版日: 2023年03月28日
発行: DataM Intelligence
ページ情報: 英文 190 Pages
納期: 約2営業日
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SiCパワー半導体の世界市場は、予測期間(2023-2030年)にCAGR 33.1%で成長しています。
電気自動車や再生可能エネルギーシステムなど、さまざまな用途でエネルギー効率に優れ、環境に配慮したソリューションへの需要が高まっています。SiCパワー半導体は、従来のシリコンベースのパワー半導体に比べて高効率で熱安定性が高いため、高出力かつ高温のアプリケーションで採用が拡大しています。SiCパワー半導体の技術的進歩により、性能と費用対効果が向上した新製品が開発されました。
SiCパワー半導体技術の進歩は、SiCパワー半導体の世界市場成長の重要な促進要因となっています。SiCパワー半導体は、従来のシリコンベースのデバイスに比べて、高効率、高電力密度、高温動作など、いくつかの利点を備えています。SiC MOSFETの開発など、最近のSiCパワー半導体技術の進歩は、SiCパワーエレクトロニクスの性能と信頼性をさらに向上させました。
SiC MOSFETは、ゲート酸化膜に従来の二酸化ケイ素ではなく、炭化ケイ素を使用したトランジスタタイプです。この設計は、低オン抵抗、高速スイッチング、ゲート駆動要件の低減など、いくつかの利点を備えています。これらの利点は、SiCパワーエレクトロニクスのコスト削減と効率向上に役立ち、従来のシリコンベースのデバイスとの競合をより有利にします。
炭化ケイ素(SiC)パワー半導体のコスト高が、世界市場の成長を阻害する主な要因の一つとなっています。SiCパワー半導体は高品質な材料で作られているため、製造コストが高いのです。さらに、SiCパワー半導体の製造工程は複雑で、特殊な設備や技術が必要なため、さらにコストが高くなります。
SiCパワー半導体の高コストは、特にコスト感度の高い民生用や産業用アプリケーションで広く採用されるための大きな障壁となります。また、高コストであるため、中小企業や新興企業が参入しにくく、市場の革新や競争が制限される可能性があります。
COVID-19分析では、COVID前シナリオ、COVIDシナリオ、COVID後シナリオに加え、価格力学(パンデミック時やCOVID前シナリオとの比較による価格変動を含む)、需要-供給スペクトラム(取引制限、封鎖、その後の問題による需要と供給のシフト)、政府の取り組み(政府機関による市場、セクター、産業の活性化に関する取り組み)、メーカーの戦略的取り組み(COVID問題を軽減するためのメーカーの取り組み)についても解説しています。
The global SiC power semiconductor market reached US$ XX million in 2022 and is projected to witness lucrative growth by reaching up to US$ XX million by 2030. The market is growing at a CAGR of 33.1% during the forecast period (2023-2030).
Rising demand for energy-efficient and environmentally friendly solutions in various applications, such as electric vehicles and renewable energy systems. Growing adoption of SiC power semiconductors in high-power and high-temperature applications due to their higher efficiency and thermal stability compared to traditional Silicon-based power semiconductors. Technological advancements in SiC power semiconductors led to the development of new products with improved performance and cost-effectiveness.
Advancements in SiC power semiconductor technology are a significant driving factor for the global SiC power semiconductor market growth. SiC power semiconductors offer several advantages over traditional silicon-based devices, such as higher efficiency, higher power densityand higher temperature operation. Recent advancements in SiC power semiconductor technology, such as the development of SiC MOSFETs, have further improved the performance and reliability of SiC power electronics.
SiC MOSFETs are a transistor type that uses a gate oxide layer made of silicon carbide rather than traditional silicon dioxide. This design offers several advantages, including lower on-resistance, faster switching speedsand reduced gate drive requirements. These benefits help to reduce the cost and improve the efficiency of SiC power electronics, making them more competitive with traditional silicon-based devices.
The high cost of Silicon Carbide (SiC) power semiconductors is one of the main factors hampering the growth of the global market. SiC power semiconductors are made of high-quality materials, which are expensive to manufacture. Additionally, the production process of SiC power semiconductors is complex and requires specialized equipment and technology, which further increases the cost.
The high cost of SiC power semiconductors is a major barrier to widespread adoption, especially for consumer and industrial applications where cost sensitivity is high. The high cost of these devices also makes them less accessible to smaller companies and startups, which can limit innovation and competition in the market.
The COVID-19 Analysis includes Pre-COVID Scenario, COVID Scenario and Post-COVID Scenario along with Pricing Dynamics (Including pricing change during and post-pandemic comparing it with pre-COVID scenarios), Demand-Supply Spectrum (Shift in demand and supply owing to trading restrictions, lockdown and subsequent issues), Government Initiatives (Initiatives to revive market, sector or Industry by Government Bodies) and Manufacturers Strategic Initiatives (What manufacturers did to mitigate the COVID issues will be covered here).
The global SiC power semiconductor market is segmented based on component, application, end-user and region.
SiC discrete are an important part of the SiC power semiconductor market and have supported its growth. Discrete devices are individual components used to control the electricity flow in a circuit and they offer many benefits compared to traditional silicon-based devices. SiC discrete are an important component of the SiC power semiconductor market. They have helped to drive its growth by enabling higher efficiency, higher switching frequency, smaller sizeand increased reliability. As the demand for high-performance, energy-efficient devices continues to grow. SiC discrete are expected to play an increasingly important role in the global semiconductor market.
North American countries such as U.S. and Canada have been at the forefront of technological advancements in SiC power semiconductors. Many of the leading SiC power semiconductor companies are based in North America and they are constantly investing in their research and development to enhance the performance and reduce the cost of SiC power devices. The growing shift towards renewable energy sources such as wind and solar drives the demand for SiC power semiconductors in North America. SiC power devices are more efficient than traditional silicon-based devices, making them ideal for renewable energy applications.
The major global players in the market include: Nouryon, Dow, BASF, Kemira OYJ, Mitsubishi Chemical Holdings Corporation, ADM, Nippon Shokubai Co. Ltd., Ascend Performance Materials, Hexion and Eastman Chemical Company.
The global SiC power semiconductor market report would provide approximately 61 tables, 63 figures and 190 Pages.
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