次世代不揮発性メモリ市場：世界の産業規模、シェア、動向、機会、予測、タイプ別、ウエハーサイズ別、組織規模別、エンドユーザー別、地域別、競合別、2019年～2029年

世界の次世代不揮発性メモリの市場規模は、2023年に35億米ドルとなり、予測期間中のCAGRは14.2%で、2029年までには78億3,000万米ドルに達すると予測されています。

次世代不揮発性メモリ（NVM）市場は、幅広いメモリ技術の中で急速に発展している分野であり、従来の方法を超えてデータの保存と検索機能を強化することを目的とした技術革新が特徴です。電源が切れてもデータを保持する不揮発性メモリは、NANDフラッシュやDRAMのような既存のソリューションの限界に対処するために設計された次世代技術の導入により、著しい進歩を遂げています。こうした進歩の背景には、コンシューマーエレクトロニクス、企業データセンター、自動車システム、産業オートメーションなど、さまざまな用途で、より高速、高効率、大容量のメモリ・ソリューションに対する需要が高まっていることがあります。次世代NVM市場には、従来のメモリに比べて性能、耐久性、拡張性を向上させるさまざまな新技術が含まれています。この市場の主要技術には、抵抗変化メモリ（ReRAM）、相変化メモリ（PCM）、磁気抵抗RAM（MRAM）、強誘電体RAM（FeRAM）などがあります。これらの技術はそれぞれ、データの保存と読み出しに独自のメカニズムを活用し、速度、エネルギー効率、データの完全性の面で明確な利点を提供します。例えば、ReRAMは抵抗スイッチングを利用して材料の抵抗を変化させるため、高速動作と低消費電力を実現します。一方、PCMは相変化材料を利用してデータを保存するため、優れた耐久性とデータ保持を実現します。MRAMは磁気状態を利用してデータを表現し、高速性能と不揮発性を実現します。FeRAMは強誘電体材料を利用して高速書き込み速度と低電力要件を達成します。

主要な市場促進要因

高性能コンピューティングへの需要の高まり

モノのインターネット（IoT）とスマートデバイスの進歩

データ・セキュリティと信頼性への関心の高まり

主要な市場課題

技術の複雑さと統合

高い開発コストと経済性

主要な市場動向

新しいメモリ技術の出現

IoTとエッジコンピューティングの成長がNVM需要を牽引

目次

第1章 製品概要

第2章 調査手法

第3章 エグゼクティブサマリー

第4章 顧客の声

第5章 世界の次世代不揮発性メモリ市場展望

• 市場規模・予測
  • 金額別
• 市場シェア・予測
  • タイプ別（磁気抵抗ランダムアクセスメモリ、強誘電体ランダムアクセスメモリ、抵抗ランダムアクセスメモリ、ナノランダムアクセスメモリ、スピントランスファートルクRAM、その他）
  • ウエハーサイズ別（200mm、300mm、その他）
  • 組織規模別（大企業、中小企業）
  • エンドユーザー別（IT・通信、メディア・エンターテインメント、ヘルスケア、自動車・輸送、航空宇宙・防衛、BFSI、その他）
  • 地域別
• 企業別（2023年）
• 市場マップ

第6章 北米の次世代不揮発性メモリ市場展望

• 市場規模・予測
  • 金額別
• 市場シェア・予測
  • タイプ別
  • ウエハーサイズ別
  • 組織規模別
  • エンドユーザー別
  • 国別
• 北米：国別分析
  • 米国
  • カナダ
  • メキシコ

第7章 欧州の次世代不揮発性メモリ市場展望

• 市場規模・予測
  • 金額別
• 市場シェア・予測
  • タイプ別
  • ウエハーサイズ別
  • 組織規模別
  • エンドユーザー別
  • 国別
• 欧州：国別分析
  • ドイツ
  • 英国
  • イタリア
  • フランス
  • スペイン

第8章 アジア太平洋の次世代不揮発性メモリ市場展望

• 市場規模・予測
  • 金額別
• 市場シェア・予測
  • タイプ別
  • ウエハーサイズ別
  • 組織規模別
  • エンドユーザー別
  • 国別
• アジア太平洋：国別分析
  • 中国
  • インド
  • 日本
  • 韓国
  • オーストラリア

第9章 南米の次世代不揮発性メモリ市場展望

• 市場規模・予測
  • 金額別
• 市場シェア・予測
  • タイプ別
  • ウエハーサイズ別
  • 組織規模別
  • エンドユーザー別
  • 国別
• 南米：国別分析
  • ブラジル
  • アルゼンチン
  • コロンビア

第10章 中東・アフリカの次世代不揮発性メモリ市場展望

• 市場規模・予測
  • 金額別
• 市場シェア・予測
  • タイプ別
  • ウエハーサイズ別
  • 組織規模別
  • エンドユーザー別
  • 国別
• 中東・アフリカ：国別分析
  • 南アフリカ
  • サウジアラビア
  • アラブ首長国連邦
  • クウェート
  • トルコ

第11章 市場力学

• 促進要因
• 課題

第12章 市場動向と発展

第13章 企業プロファイル

• Intel Corporation
• Samsung Electronics Co., Ltd.
• Sony Corporation
• Toshiba Corporation
• IBM Corporation
• STMicroelectronics International N.V.
• SK Hynix Inc.
• NXP Semiconductors N.V.
• Renesas Electronics Corporation
• Infineon Technologies AG

第14章 戦略的提言

第15章 調査会社について・免責事項

Global Next Generation Non-Volatile Memory Market was valued at USD 3.5 billion in 2023 and is expected to reach USD 7.83 billion by 2029 with a CAGR of 14.2% during the forecast period. The next generation non-volatile memory (NVM) market represents a rapidly evolving sector within the broader memory technology landscape, characterized by innovations aimed at enhancing data storage and retrieval capabilities beyond traditional methods. Non-volatile memory, which retains data even when power is lost, has seen significant advancements with the introduction of next-generation technologies designed to address the limitations of existing solutions like NAND flash and DRAM. These advancements are driven by the growing demand for faster, more efficient, and higher-capacity memory solutions across various applications, including consumer electronics, enterprise data centers, automotive systems, and industrial automation. The market for next-generation NVM encompasses a range of emerging technologies that offer improved performance, endurance, and scalability compared to conventional memory types. Key technologies in this market include Resistive RAM (ReRAM), Phase-Change Memory (PCM), Magnetoresistive RAM (MRAM), and Ferroelectric RAM (FeRAM). Each of these technologies leverages unique mechanisms to store and retrieve data, providing distinct advantages in terms of speed, energy efficiency, and data integrity. For instance, ReRAM uses resistive switching to change the resistance of a material, offering high-speed operation and low power consumption. PCM, on the other hand, utilizes phase-change materials to store data, providing excellent endurance and data retention. MRAM relies on magnetic states to represent data, delivering high-speed performance and non-volatility, while FeRAM uses ferroelectric materials to achieve fast write speeds and low power requirements.

Key Market Drivers

Increasing Demand for High-Performance Computing

The growing demand for high-performance computing (HPC) is a primary driver for the next generation non-volatile memory (NVM) market. As computational requirements escalate across various sectors-ranging from data centers and cloud computing to artificial intelligence (AI) and machine learning-the need for faster and more efficient memory solutions becomes critical. Traditional memory technologies, such as DRAM and NAND flash, often face limitations in speed, endurance, and scalability, which can impact the performance of HPC systems. Next-generation NVM technologies, such as 3D XPoint, phase-change memory (PCM), and resistive random-access memory (ReRAM), offer significant advantages in terms of speed, endurance, and energy efficiency. These advanced memory technologies enable faster data access and lower latency, which are essential for handling large datasets and complex computations in real-time. For instance, 3D XPoint technology provides a substantial improvement in data transfer speeds and durability compared to conventional NAND flash, making it ideal for applications that require high-speed data processing and frequent read/write operations. Similarly, PCM and ReRAM technologies offer potential benefits in terms of high-speed performance and low power consumption, further enhancing the efficiency of HPC systems. As industries continue to push the boundaries of data processing and computing power, the adoption of next-generation NVM technologies is expected to grow, driving market expansion and innovation. In April 2023, SK Hynix Inc. (South Korea) achieved a significant milestone by becoming the first in the industry to develop a 12-layer HBM3 product with a 24-gigabyte (GB) memory capacity, the largest currently available in the market. This advancement marks a 50% increase in memory capacity compared to its predecessor and follows the company's successful mass production of the world's first HBM3 in June 2022.

Advancements in Internet of Things (IoT) and Smart Devices

The rapid expansion of the Internet of Things (IoT) and the proliferation of smart devices are significant drivers of the next generation non-volatile memory (NVM) market. IoT applications, including smart home devices, wearable technology, industrial sensors, and connected automotive systems, generate vast amounts of data that need to be stored and processed efficiently. Traditional memory solutions may not always meet the performance and durability requirements of these emerging applications. Next-generation NVM technologies offer enhanced capabilities that align with the needs of IoT devices. For instance, technologies like resistive random-access memory (ReRAM) and phase-change memory (PCM) provide high endurance, low power consumption, and fast access times, making them well-suited for the demanding requirements of IoT devices. These memory solutions can handle frequent read/write cycles and operate efficiently in environments with limited power resources. Additionally, the compact form factor and non-volatility of next-generation NVMs enable their integration into small, low-power devices without compromising performance. As the number of connected devices and the volume of data generated by IoT applications continue to grow, the demand for advanced memory solutions that can support these requirements is expected to drive the adoption of next-generation NVM technologies.

Growing Focus on Data Security and Reliability

The increasing focus on data security and reliability is a crucial driver for the next generation non-volatile memory (NVM) market. As data breaches and cyber-attacks become more prevalent, organizations across various sectors are prioritizing the protection and integrity of their data. Traditional memory technologies may not always provide the level of security and reliability required to safeguard sensitive information. Next-generation NVM technologies offer enhanced features that address these concerns. For example, technologies such as phase-change memory (PCM) and 3D XPoint provide improved data integrity and durability, which are essential for applications requiring reliable data storage and retrieval. PCM, with its ability to withstand high temperatures and maintain data integrity under challenging conditions, offers advantages in terms of data protection and longevity. Additionally, the non-volatile nature of next-generation NVM ensures that data is preserved even in the event of power failures or system shutdowns, reducing the risk of data loss. The growing emphasis on data security and reliability in sectors such as finance, healthcare, and critical infrastructure is driving the demand for advanced memory solutions that can meet these stringent requirements. As organizations seek to enhance their data protection measures and ensure the reliability of their storage systems, the adoption of next-generation NVM technologies is expected to increase, fueling market growth and innovation.

Key Market Challenges

Technological Complexity and Integration

One of the primary challenges facing the next generation non-volatile memory (NVM) market is the technological complexity associated with developing and integrating advanced memory technologies. The next-generation NVM landscape, which includes technologies such as 3D NAND, phase-change memory (PCM), resistive RAM (ReRAM), and spin-transfer torque RAM (STT-RAM), is characterized by rapid innovation and intricate design requirements. Each of these technologies has unique characteristics and performance metrics, and integrating them into existing systems poses significant technical hurdles. For instance, 3D NAND, which offers high storage density and improved performance over traditional NAND flash, requires advanced fabrication techniques to stack memory cells vertically. This process involves intricate layering and precise control over materials and deposition methods, increasing the complexity of manufacturing. Similarly, PCM, which stores data by changing the phase of a material, needs precise control over temperature and electrical conditions to ensure reliable data storage and retrieval. This complexity extends to the design and testing of memory controllers, interfaces, and integration with other system components. The challenge is compounded by the need for seamless integration with current computing architectures and systems. Next-generation NVM technologies must be compatible with existing hardware and software infrastructures, which requires extensive engineering efforts to ensure interoperability and optimize performance. The development of new memory technologies often necessitates changes to system designs, including modifications to memory controllers, data paths, and firmware. This process can be time-consuming and costly, particularly for organizations that need to balance the integration of new technologies with maintaining the stability and performance of existing systems. NVM market evolves, companies must navigate a rapidly shifting landscape of standards and protocols. The lack of universally accepted standards can lead to fragmentation and compatibility issues, making it challenging for technology providers to develop solutions that work across different platforms and applications. Ensuring that next-generation NVM technologies adhere to emerging industry standards while delivering competitive performance is a significant challenge for manufacturers. Technological complexity of next-generation NVMs and the need for effective integration with existing systems represent substantial barriers to market adoption. Addressing these challenges requires substantial investment in research and development, as well as collaboration across industry stakeholders to establish standards and best practices.

High Development Costs and Economic Viability

Another major challenge for the next generation non-volatile memory (NVM) market is the high development costs and economic viability of advanced memory technologies. The development and commercialization of next-generation NVMs, such as 3D NAND, phase-change memory (PCM), and resistive RAM (ReRAM), involve significant financial investments in research and development, manufacturing infrastructure, and scaling production. The initial costs associated with developing new NVM technologies are substantial. This includes expenses related to advanced material research, fabrication equipment, and the creation of prototypes for testing and validation. The development cycle for next-generation memory technologies can span several years, during which companies must invest heavily in ensuring that their innovations meet performance, reliability, and durability standards. These costs can be prohibitive, particularly for smaller companies or startups without substantial financial resources. Once developed, scaling production of next-generation NVMs to meet commercial demand presents additional economic challenges. High-volume manufacturing of advanced memory technologies requires state-of-the-art facilities and equipment, which entails significant capital expenditure. The transition from pilot production to full-scale manufacturing involves overcoming technical and logistical hurdles, such as maintaining consistent quality and yield rates while optimizing production processes. These factors contribute to the overall cost structure of next-generation NVMs, potentially impacting their market competitiveness. High development and production costs must be balanced with market pricing strategies. For next-generation NVM technologies to achieve widespread adoption, they must be competitively priced relative to existing memory solutions. This requires careful management of production costs and pricing strategies to ensure that new technologies offer a clear value proposition to end-users. Additionally, the market's competitive nature means that companies must continually innovate and reduce costs to stay ahead of rivals, which further pressures profit margins. Economic viability also depends on achieving a sufficient return on investment. Companies must assess the long-term profitability of their NVM technologies, considering factors such as market demand, pricing dynamics, and competitive pressures. Ensuring that next-generation NVMs are both economically viable and commercially successful is a complex and challenging task that requires strategic planning and financial acumen. High development costs and economic viability of next-generation NVMs pose significant challenges to market growth and adoption. Addressing these challenges involves careful management of financial resources, strategic investment in manufacturing capabilities, and effective pricing strategies to achieve a balance between cost, performance, and market competitiveness.

Key Market Trends

Emergence of New Memory Technologies

The next generation non-volatile memory (NVM) market is witnessing the emergence of several innovative memory technologies that promise to revolutionize data storage and processing. Traditional memory technologies like NAND flash and DRAM have long dominated the market, but new advancements are driving significant changes in the landscape. Among the most notable of these technologies are Resistive Random Access Memory (ReRAM), Phase Change Memory (PCM), and Magnetoresistive Random Access Memory (MRAM). Each of these emerging technologies offers distinct advantages that address the limitations of current memory solutions. For instance, ReRAM, also known as memristor, promises higher speed, lower power consumption, and increased endurance compared to NAND flash memory. Its ability to switch resistance states quickly and reliably makes it a strong candidate for future memory solutions in both consumer electronics and enterprise applications. Similarly, PCM leverages changes in the phase state of materials to store data, offering improved performance and endurance over traditional NAND flash, with potential applications in high-performance computing and data centers. MRAM, which utilizes magnetic states to represent data, provides non-volatility with high speed and low power consumption, making it suitable for applications requiring fast access and reliable data retention. The continuous development and commercialization of these next-generation memory technologies are poised to drive innovation across various sectors, including consumer electronics, automotive, and data centers, by offering enhanced performance, durability, and efficiency. As these technologies mature and become more widely adopted, they are expected to reshape the memory market, pushing the boundaries of data storage and processing capabilities.

Growth of IoT and Edge Computing Driving NVM Demand

The rapid expansion of the Internet of Things (IoT) and edge computing is a key trend influencing the next generation non-volatile memory (NVM) market. The proliferation of IoT devices and the shift towards edge computing are creating new demands for memory solutions that offer low power consumption, high durability, and reliable data retention. IoT devices, which range from smart home appliances to industrial sensors, generate and process vast amounts of data that require efficient storage and fast access. Traditional memory technologies may not always meet the power and performance requirements of these devices, driving the need for advanced NVM solutions. Next-generation NVM technologies, such as ReRAM and PCM, are particularly well-suited for IoT and edge computing applications due to their low power consumption, high endurance, and ability to operate effectively in diverse environmental conditions. For example, ReRAM's low power requirements and high-speed performance make it an ideal choice for battery-operated IoT devices that need to process and store data efficiently while minimizing energy consumption. Similarly, PCM's durability and reliability are advantageous for edge computing devices that operate in harsh conditions and require robust memory solutions for data storage and retrieval. The growth of IoT and edge computing is also driving innovation in memory architecture, as companies seek to develop new solutions that can handle the increasing volume of data generated by these technologies. As the demand for connected devices and real-time data processing continues to rise, the next-generation NVM market is expected to benefit from the increasing need for advanced memory solutions that support the evolving requirements of IoT and edge computing applications.

Segmental Insights

Type Insights

The Spin-Transfer Torque RAM segment held the largest Market share in 2023. The advancement and growing adoption of spin-transfer torque random-access memory (STT-RAM) are driven by several key factors that underscore its significant potential in the next generation non-volatile memory market. STT-RAM represents a groundbreaking innovation in memory technology, leveraging the spin of electrons to manipulate magnetic states and achieve data storage. One of the primary drivers for the STT-RAM market is its superior performance characteristics compared to traditional memory technologies. STT-RAM offers faster data access speeds, higher endurance, and greater energy efficiency, which are crucial for modern computing demands. Unlike conventional NAND flash memory and dynamic RAM (DRAM), STT-RAM combines the benefits of non-volatile storage with the speed of volatile memory, eliminating the trade-off between speed and persistence. This unique attribute makes STT-RAM particularly attractive for applications requiring rapid data processing and long-term data retention without power. Another significant driver is the growing need for high-performance computing in various sectors, including data centers, consumer electronics, and industrial applications. As data volumes continue to expand and computational tasks become increasingly complex, there is a pressing demand for memory solutions that can offer both high speed and reliable data storage. STT-RAM's ability to provide instant access to stored data while maintaining it without power makes it an ideal solution for applications such as real-time data analytics, high-speed caching, and critical system memory in servers and workstations. Additionally, STT-RAM's low power consumption is a crucial advantage in an era where energy efficiency is a top priority. With the increasing emphasis on reducing energy consumption and improving battery life in mobile devices and other portable electronics, STT-RAM offers a compelling solution by delivering high performance with minimal power requirements. The rise of the Internet of Things (IoT) and the proliferation of smart devices also contribute to the growing interest in STT-RAM. IoT devices often require memory solutions that can handle frequent data access and updates while operating efficiently in power-constrained environments. STT-RAM's non-volatility and high-speed performance align well with these requirements, making it suitable for applications such as smart sensors, wearable technology, and connected appliances. Furthermore, the ongoing advancements in STT-RAM technology, including improvements in scalability and integration with existing semiconductor processes, are driving its adoption. Research and development efforts are focused on enhancing the performance, reducing the cost, and increasing the density of STT-RAM, which are essential for making it a viable alternative to traditional memory technologies in mainstream applications. STT-RAM market is driven by its superior performance characteristics, the need for high-speed and reliable memory solutions in high-performance computing, energy efficiency requirements, and the growing demand for smart, connected devices. As technology continues to evolve and the need for advanced memory solutions becomes more pronounced, STT-RAM is well-positioned to play a pivotal role in the next generation non-volatile memory landscape.

Regional Insights

North America region held the largest market share in 2023. The next generation non-volatile memory market in North America is experiencing significant growth driven by several critical factors that reflect the region's technological advancement and increasing data demands. One of the primary drivers is the rapid evolution of data-intensive applications and the need for faster, more efficient memory solutions. In North America, a hub for technological innovation and digital transformation, industries such as cloud computing, artificial intelligence (AI), and big data analytics are expanding at an unprecedented pace. These applications require advanced memory technologies that can deliver superior speed, durability, and efficiency. Next generation non-volatile memory (NVM) technologies, such as 3D NAND, Phase-Change Memory (PCM), and Resistive RAM (ReRAM), offer significant improvements over traditional memory solutions, including higher data storage density, faster read/write speeds, and enhanced endurance. This performance boost is crucial for handling the massive volumes of data generated and processed by these cutting-edge applications. Increasing adoption of Internet of Things (IoT) devices and smart technologies in North America is driving demand for next-generation NVM. IoT devices, which range from consumer electronics to industrial sensors, require memory solutions that are not only fast and reliable but also energy-efficient and capable of withstanding varying environmental conditions. Next-generation NVM provides these attributes, supporting the deployment of IoT devices that require robust and efficient memory for real-time data processing and storage. As the IoT ecosystem expands, driven by the growth of smart cities, autonomous vehicles, and connected infrastructure, the need for advanced non-volatile memory solutions becomes more pronounced. The growing focus on enhancing data security and integrity is another key driver for the next-generation NVM market. As data breaches and cyber threats become increasingly sophisticated, organizations in North America are prioritizing security measures that safeguard sensitive information. Next-generation NVM technologies offer improved data protection features, including better resistance to data corruption and loss, which is critical for maintaining data integrity in mission-critical applications. This enhanced security capability is driving the adoption of advanced NVM solutions across various sectors, including finance, healthcare, and government. Ongoing advancements in semiconductor manufacturing processes and the reduction in memory costs are making next-generation NVM more accessible and economically viable. Innovations in memory technology, such as the development of new materials and fabrication techniques, are lowering production costs and improving the performance-to-cost ratio of non-volatile memory solutions. This cost reduction is facilitating the broader adoption of next-generation NVM across different market segments, from high-performance computing to consumer electronics. supportive ecosystem of research and development, coupled with favorable government policies and investments in technology infrastructure, is fostering the growth of the next-generation NVM market in North America. The region's strong emphasis on technological advancement and innovation creates an environment conducive to the development and commercialization of advanced memory technologies. Collaborative efforts between industry players, academic institutions, and government agencies are accelerating the advancement of NVM technologies, driving their adoption across various applications. North American next generation non-volatile memory market is being propelled by the demand for high-performance, reliable, and secure memory solutions in data-intensive applications, IoT devices, and emerging technologies. The combination of technological advancements, cost reductions, and a supportive innovation ecosystem is fueling the growth and adoption of next-generation NVM in the region.

Key Market Players

• Intel Corporation
• Samsung Electronics Co., Ltd.
• Sony Corporation
• Toshiba Corporation
• IBM Corporation
• STMicroelectronics International N.V.
• SK Hynix Inc.
• NXP Semiconductors N.V.
• Renesas Electronics Corporation
• Infineon Technologies AG

Report Scope:

In this report, the Global Next Generation Non-Volatile Memory Market has been segmented into the following categories, in addition to the industry trends which have also been detailed below:

Next Generation Non-Volatile Memory Market, By Type:

• Magneto Resistive Random-Access Memory
• Ferroelectric Random-Access Memory
• Resistive Random-Access Memory
• Nano Random-Access Memory
• Spin-Transfer Torque RAM
• Others

Next Generation Non-Volatile Memory Market, By Wafer Size:

• 200 mm
• 300 mm
• Others

Next Generation Non-Volatile Memory Market, By Organization Size:

• Large Enterprises
• Small & Medium Enterprises

Next Generation Non-Volatile Memory Market, By End-User:

• IT & Telecom
• Media & Entertainment
• Healthcare
• Automotive & Transportation
• Aerospace & Defense
• BFSI
• Others

Next Generation Non-Volatile Memory Market, By Region:

• North America
  • United States
  • Canada
  • Mexico
• Europe
  • France
  • United Kingdom
  • Italy
  • Germany
  • Spain
• Asia-Pacific
  • China
  • India
  • Japan
  • Australia
  • South Korea
• South America
  • Brazil
  • Argentina
  • Colombia
• Middle East & Africa
  • South Africa
  • Saudi Arabia
  • UAE
  • Kuwait
  • Turkey

Competitive Landscape

Company Profiles: Detailed analysis of the major companies presents in the Global Next Generation Non-Volatile Memory Market.

Available Customizations:

Global Next Generation Non-Volatile Memory Market report with the given Market data, TechSci Research offers customizations according to a company's specific needs. The following customization options are available for the report:

Company Information

• Detailed analysis and profiling of additional Market players (up to five).

Table of Contents

1. Product Overview

• 1.1. Market Definition
• 1.2. Scope of the Market
  • 1.2.1. Markets Covered
  • 1.2.2. Years Considered for Study
• 1.3. Key Market Segmentations

2. Research Methodology

• 2.1. Objective of the Study
• 2.2. Baseline Methodology
• 2.3. Formulation of the Scope
• 2.4. Assumptions and Limitations
• 2.5. Sources of Research
  • 2.5.1. Secondary Research
  • 2.5.2. Primary Research
• 2.6. Approach for the Market Study
  • 2.6.1. The Bottom-Up Approach
  • 2.6.2. The Top-Down Approach
• 2.7. Methodology Followed for Calculation of Market Size & Market Shares
• 2.8. Forecasting Methodology
  • 2.8.1. Data Triangulation & Validation

3. Executive Summary

4. Voice of Customer

5. Global Next Generation Non-Volatile Memory Market Outlook

• 5.1. Market Size & Forecast
  • 5.1.1. By Value
• 5.2. Market Share & Forecast
  • 5.2.1. By Type (Magneto Resistive Random-Access Memory, Ferroelectric Random-Access Memory, Resistive Random-Access Memory, Nano Random-Access Memory, Spin-Transfer Torque RAM, and Others)
  • 5.2.2. By Wafer Size (200 mm, 300 mm, Others)
  • 5.2.3. By Organization Size (Large Enterprises, Small & Medium Enterprises)
  • 5.2.4. By End-User (IT & Telecom, Media & Entertainment, Healthcare, Automotive & Transportation, Aerospace & Defense, BFSI, Others)
  • 5.2.5. By Region
• 5.3. By Company (2023)
• 5.4. Market Map

6. North America Next Generation Non-Volatile Memory Market Outlook

• 6.1. Market Size & Forecast
  • 6.1.1. By Value
• 6.2. Market Share & Forecast
  • 6.2.1. By Type
  • 6.2.2. By Wafer Size
  • 6.2.3. By Organization Size
  • 6.2.4. By End-User
  • 6.2.5. By Country
• 6.3. North America: Country Analysis
  • 6.3.1. United States Next Generation Non-Volatile Memory Market Outlook
    • 6.3.1.1. Market Size & Forecast
      • 6.3.1.1.1.By Value
    • 6.3.1.2. Market Share & Forecast
      • 6.3.1.2.1.By Type
      • 6.3.1.2.2.By Wafer Size
      • 6.3.1.2.3.By Organization Size
      • 6.3.1.2.4.By End-User
  • 6.3.2. Canada Next Generation Non-Volatile Memory Market Outlook
    • 6.3.2.1. Market Size & Forecast
      • 6.3.2.1.1.By Value
    • 6.3.2.2. Market Share & Forecast
      • 6.3.2.2.1.By Type
      • 6.3.2.2.2.By Wafer Size
      • 6.3.2.2.3.By Organization Size
      • 6.3.2.2.4.By End-User
  • 6.3.3. Mexico Next Generation Non-Volatile Memory Market Outlook
    • 6.3.3.1. Market Size & Forecast
      • 6.3.3.1.1.By Value
    • 6.3.3.2. Market Share & Forecast
      • 6.3.3.2.1.By Type
      • 6.3.3.2.2.By Wafer Size
      • 6.3.3.2.3.By Organization Size
      • 6.3.3.2.4.By End-User

7. Europe Next Generation Non-Volatile Memory Market Outlook

• 7.1. Market Size & Forecast
  • 7.1.1. By Value
• 7.2. Market Share & Forecast
  • 7.2.1. By Type
  • 7.2.2. By Wafer Size
  • 7.2.3. By Organization Size
  • 7.2.4. By End-User
  • 7.2.5. By Country
• 7.3. Europe: Country Analysis
  • 7.3.1. Germany Next Generation Non-Volatile Memory Market Outlook
    • 7.3.1.1. Market Size & Forecast
      • 7.3.1.1.1.By Value
    • 7.3.1.2. Market Share & Forecast
      • 7.3.1.2.1.By Type
      • 7.3.1.2.2.By Wafer Size
      • 7.3.1.2.3.By Organization Size
      • 7.3.1.2.4.By End-User
  • 7.3.2. United Kingdom Next Generation Non-Volatile Memory Market Outlook
    • 7.3.2.1. Market Size & Forecast
      • 7.3.2.1.1.By Value
    • 7.3.2.2. Market Share & Forecast
      • 7.3.2.2.1.By Type
      • 7.3.2.2.2.By Wafer Size
      • 7.3.2.2.3.By Organization Size
      • 7.3.2.2.4.By End-User
  • 7.3.3. Italy Next Generation Non-Volatile Memory Market Outlook
    • 7.3.3.1. Market Size & Forecast
      • 7.3.3.1.1.By Value
    • 7.3.3.2. Market Share & Forecast
      • 7.3.3.2.1.By Type
      • 7.3.3.2.2.By Wafer Size
      • 7.3.3.2.3.By Organization Size
      • 7.3.3.2.4.By End-User
  • 7.3.4. France Next Generation Non-Volatile Memory Market Outlook
    • 7.3.4.1. Market Size & Forecast
      • 7.3.4.1.1.By Value
    • 7.3.4.2. Market Share & Forecast
      • 7.3.4.2.1.By Type
      • 7.3.4.2.2.By Wafer Size
      • 7.3.4.2.3.By Organization Size
      • 7.3.4.2.4.By End-User
  • 7.3.5. Spain Next Generation Non-Volatile Memory Market Outlook
    • 7.3.5.1. Market Size & Forecast
      • 7.3.5.1.1.By Value
    • 7.3.5.2. Market Share & Forecast
      • 7.3.5.2.1.By Type
      • 7.3.5.2.2.By Wafer Size
      • 7.3.5.2.3.By Organization Size
      • 7.3.5.2.4.By End-User

8. Asia-Pacific Next Generation Non-Volatile Memory Market Outlook

• 8.1. Market Size & Forecast
  • 8.1.1. By Value
• 8.2. Market Share & Forecast
  • 8.2.1. By Type
  • 8.2.2. By Wafer Size
  • 8.2.3. By Organization Size
  • 8.2.4. By End-User
  • 8.2.5. By Country
• 8.3. Asia-Pacific: Country Analysis
  • 8.3.1. China Next Generation Non-Volatile Memory Market Outlook
    • 8.3.1.1. Market Size & Forecast
      • 8.3.1.1.1.By Value
    • 8.3.1.2. Market Share & Forecast
      • 8.3.1.2.1.By Type
      • 8.3.1.2.2.By Wafer Size
      • 8.3.1.2.3.By Organization Size
      • 8.3.1.2.4.By End-User
  • 8.3.2. India Next Generation Non-Volatile Memory Market Outlook
    • 8.3.2.1. Market Size & Forecast
      • 8.3.2.1.1.By Value
    • 8.3.2.2. Market Share & Forecast
      • 8.3.2.2.1.By Type
      • 8.3.2.2.2.By Wafer Size
      • 8.3.2.2.3.By Organization Size
      • 8.3.2.2.4.By End-User
  • 8.3.3. Japan Next Generation Non-Volatile Memory Market Outlook
    • 8.3.3.1. Market Size & Forecast
      • 8.3.3.1.1.By Value
    • 8.3.3.2. Market Share & Forecast
      • 8.3.3.2.1.By Type
      • 8.3.3.2.2.By Wafer Size
      • 8.3.3.2.3.By Organization Size
      • 8.3.3.2.4.By End-User
  • 8.3.4. South Korea Next Generation Non-Volatile Memory Market Outlook
    • 8.3.4.1. Market Size & Forecast
      • 8.3.4.1.1.By Value
    • 8.3.4.2. Market Share & Forecast
      • 8.3.4.2.1.By Type
      • 8.3.4.2.2.By Wafer Size
      • 8.3.4.2.3.By Organization Size
      • 8.3.4.2.4.By End-User
  • 8.3.5. Australia Next Generation Non-Volatile Memory Market Outlook
    • 8.3.5.1. Market Size & Forecast
      • 8.3.5.1.1.By Value
    • 8.3.5.2. Market Share & Forecast
      • 8.3.5.2.1.By Type
      • 8.3.5.2.2.By Wafer Size
      • 8.3.5.2.3.By Organization Size
      • 8.3.5.2.4.By End-User

9. South America Next Generation Non-Volatile Memory Market Outlook

• 9.1. Market Size & Forecast
  • 9.1.1. By Value
• 9.2. Market Share & Forecast
  • 9.2.1. By Type
  • 9.2.2. By Wafer Size
  • 9.2.3. By Organization Size
  • 9.2.4. By End-User
  • 9.2.5. By Country
• 9.3. South America: Country Analysis
  • 9.3.1. Brazil Next Generation Non-Volatile Memory Market Outlook
    • 9.3.1.1. Market Size & Forecast
      • 9.3.1.1.1.By Value
    • 9.3.1.2. Market Share & Forecast
      • 9.3.1.2.1.By Type
      • 9.3.1.2.2.By Wafer Size
      • 9.3.1.2.3.By Organization Size
      • 9.3.1.2.4.By End-User
  • 9.3.2. Argentina Next Generation Non-Volatile Memory Market Outlook
    • 9.3.2.1. Market Size & Forecast
      • 9.3.2.1.1.By Value
    • 9.3.2.2. Market Share & Forecast
      • 9.3.2.2.1.By Type
      • 9.3.2.2.2.By Wafer Size
      • 9.3.2.2.3.By Organization Size
      • 9.3.2.2.4.By End-User
  • 9.3.3. Colombia Next Generation Non-Volatile Memory Market Outlook
    • 9.3.3.1. Market Size & Forecast
      • 9.3.3.1.1.By Value
    • 9.3.3.2. Market Share & Forecast
      • 9.3.3.2.1.By Type
      • 9.3.3.2.2.By Wafer Size
      • 9.3.3.2.3.By Organization Size
      • 9.3.3.2.4.By End-User

10. Middle East and Africa Next Generation Non-Volatile Memory Market Outlook

• 10.1. Market Size & Forecast
  • 10.1.1. By Value
• 10.2. Market Share & Forecast
  • 10.2.1. By Type
  • 10.2.2. By Wafer Size
  • 10.2.3. By Organization Size
  • 10.2.4. By End-User
  • 10.2.5. By Country
• 10.3. Middle East and Africa: Country Analysis
  • 10.3.1. South Africa Next Generation Non-Volatile Memory Market Outlook
    • 10.3.1.1. Market Size & Forecast
      • 10.3.1.1.1. By Value
    • 10.3.1.2. Market Share & Forecast
      • 10.3.1.2.1. By Type
      • 10.3.1.2.2. By Wafer Size
      • 10.3.1.2.3. By Organization Size
      • 10.3.1.2.4. By End-User
  • 10.3.2. Saudi Arabia Next Generation Non-Volatile Memory Market Outlook
    • 10.3.2.1. Market Size & Forecast
      • 10.3.2.1.1. By Value
    • 10.3.2.2. Market Share & Forecast
      • 10.3.2.2.1. By Type
      • 10.3.2.2.2. By Wafer Size
      • 10.3.2.2.3. By Organization Size
      • 10.3.2.2.4. By End-User
  • 10.3.3. UAE Next Generation Non-Volatile Memory Market Outlook
    • 10.3.3.1. Market Size & Forecast
      • 10.3.3.1.1. By Value
    • 10.3.3.2. Market Share & Forecast
      • 10.3.3.2.1. By Type
      • 10.3.3.2.2. By Wafer Size
      • 10.3.3.2.3. By Organization Size
      • 10.3.3.2.4. By End-User
  • 10.3.4. Kuwait Next Generation Non-Volatile Memory Market Outlook
    • 10.3.4.1. Market Size & Forecast
      • 10.3.4.1.1. By Value
    • 10.3.4.2. Market Share & Forecast
      • 10.3.4.2.1. By Type
      • 10.3.4.2.2. By Wafer Size
      • 10.3.4.2.3. By Organization Size
      • 10.3.4.2.4. By End-User
  • 10.3.5. Turkey Next Generation Non-Volatile Memory Market Outlook
    • 10.3.5.1. Market Size & Forecast
      • 10.3.5.1.1. By Value
    • 10.3.5.2. Market Share & Forecast
      • 10.3.5.2.1. By Type
      • 10.3.5.2.2. By Wafer Size
      • 10.3.5.2.3. By Organization Size
      • 10.3.5.2.4. By End-User

11. Market Dynamics

• 11.1. Drivers
• 11.2. Challenges

12. Market Trends & Developments

13. Company Profiles

• 13.1. Intel Corporation
  • 13.1.1. Business Overview
  • 13.1.2. Key Revenue and Financials
  • 13.1.3. Recent Developments
  • 13.1.4. Key Personnel/Key Contact Person
  • 13.1.5. Key Product/Services Offered
• 13.2. Samsung Electronics Co., Ltd.
  • 13.2.1. Business Overview
  • 13.2.2. Key Revenue and Financials
  • 13.2.3. Recent Developments
  • 13.2.4. Key Personnel/Key Contact Person
  • 13.2.5. Key Product/Services Offered
• 13.3. Sony Corporation
  • 13.3.1. Business Overview
  • 13.3.2. Key Revenue and Financials
  • 13.3.3. Recent Developments
  • 13.3.4. Key Personnel/Key Contact Person
  • 13.3.5. Key Product/Services Offered
• 13.4. Toshiba Corporation
  • 13.4.1. Business Overview
  • 13.4.2. Key Revenue and Financials
  • 13.4.3. Recent Developments
  • 13.4.4. Key Personnel/Key Contact Person
  • 13.4.5. Key Product/Services Offered
• 13.5. IBM Corporation
  • 13.5.1. Business Overview
  • 13.5.2. Key Revenue and Financials
  • 13.5.3. Recent Developments
  • 13.5.4. Key Personnel/Key Contact Person
  • 13.5.5. Key Product/Services Offered
• 13.6. STMicroelectronics International N.V.
  • 13.6.1. Business Overview
  • 13.6.2. Key Revenue and Financials
  • 13.6.3. Recent Developments
  • 13.6.4. Key Personnel/Key Contact Person
  • 13.6.5. Key Product/Services Offered
• 13.7. SK Hynix Inc.
  • 13.7.1. Business Overview
  • 13.7.2. Key Revenue and Financials
  • 13.7.3. Recent Developments
  • 13.7.4. Key Personnel/Key Contact Person
  • 13.7.5. Key Product/Services Offered
• 13.8. NXP Semiconductors N.V.
  • 13.8.1. Business Overview
  • 13.8.2. Key Revenue and Financials
  • 13.8.3. Recent Developments
  • 13.8.4. Key Personnel/Key Contact Person
  • 13.8.5. Key Product/Services Offered
• 13.9. Renesas Electronics Corporation
  • 13.9.1. Business Overview
  • 13.9.2. Key Revenue and Financials
  • 13.9.3. Recent Developments
  • 13.9.4. Key Personnel/Key Contact Person
  • 13.9.5. Key Product/Services Offered
• 13.10. Infineon Technologies AG
  • 13.10.1. Business Overview
  • 13.10.2. Key Revenue and Financials
  • 13.10.3. Recent Developments
  • 13.10.4. Key Personnel/Key Contact Person
  • 13.10.5. Key Product/Services Offered

14. Strategic Recommendations

15. About Us & Disclaimer