磁気抵抗効果メモリ（MRAM）の世界市場：市場規模 - タイプ別、提供別、用途別、地域別展望、競合戦略、セグメント別予測（～2032年）

世界の磁気抵抗効果メモリ（MRAM）の市場規模は、2032年までに302億2,000万米ドルに達し、CAGRで32.97%の成長が予測されています。

パンデミックは、特定の産業においてMRAMの新たなビジネス機会を生み出しました。リモートワークやオンライン教育への需要の高まりは、データセンターインフラへの需要の急増につながり、MRAMのような高性能メモリソリューションの需要を牽引しています。

当レポートでは、世界の磁気抵抗効果メモリ（MRAM）市場について調査し、市場力学、市場変数と展望、競合情勢、タイプ・提供・用途・地域別の市場分析、企業プロファイル等に関する情報を提供しています。

目次

第1章 イントロダクション

• 調査範囲
• 市場セグメント分析

第2章 調査手法

• 調査データソース
• 市場規模の推定
• データの三角測量

第3章 エグゼクティブサマリー

第4章 市場力学

• 促進要因、抑制要因、機会、課題の分析
  • 促進要因
  • 抑制要因
  • 機会
  • 課題
• 世界の磁気抵抗効果メモリ（MRAM）市場におけるCOVID-19の影響

第5章 市場変数と展望

• SWOT分析
  • 強み
  • 弱み
  • 機会
  • 脅威
• PESTEL分析
  • 政治情勢
  • 経済情勢
  • 社会情勢
  • 技術情勢
  • 環境情勢
  • 法的情勢
• ポーターのファイブフォース分析
  • 供給企業の交渉力
  • 買い手の交渉力
  • 代替品の脅威
  • 新規参入者の脅威
  • 競合企業間の敵対関係
• ヒートマップ分析

第6章 競合情勢

• 世界の磁気抵抗効果メモリ（MRAM）の製造拠点分布、販売エリア、製品タイプ
• 世界の磁気抵抗効果メモリ（MRAM）市場における合併・買収、パートナーシップ、製品発売、コラボレーション

第7章 世界の磁気抵抗効果メモリ（MRAM）市場：タイプ別（2019年～2032年（100万米ドル））

• STT-MRAM
• Toggle MRAM

第8章 世界の磁気抵抗効果メモリ（MRAM）市場：提供別（2019年～2032年（100万米ドル））

• 埋め込み
• スタンドアロン

第9章 世界の磁気抵抗効果メモリ（MRAM）市場：用途別（2019年～2032年（100万米ドル））

• 航空宇宙・防衛
• 自動車
• 家電
• 企業向けストレージ
• ロボティクス
• その他

第10章 世界の磁気抵抗効果メモリ（MRAM）市場：地域別（2019年～2032年（100万米ドル））

• 世界の磁気抵抗効果メモリ（MRAM）の市場規模と市場シェア：地域別（2019年～2025年）
• 世界の磁気抵抗効果メモリ（MRAM）の市場規模と市場シェア：地域別（2026年～2032年）
• アジア太平洋
  • オーストラリア
  • 中国
  • インド
  • 日本
  • 韓国
  • その他のアジア太平洋
• 欧州
  • フランス
  • ドイツ
  • イタリア
  • スペイン
  • 英国
  • その他の欧州
• 中東・アフリカ
  • サウジアラビア王国
  • アラブ首長国連邦
  • その他の中東・アフリカ
• 北米
  • カナダ
  • メキシコ
  • 米国
• ラテンアメリカ
  • アルゼンチン
  • ブラジル
  • その他のラテンアメリカ

第11章 企業プロファイル

• Avalanche Technology Inc.
  • 企業概要
  • 財務展望
  • 製品概要
  • 最近の開発
• Everspin Technology Inc.
• Honeywell International Inc.
• Numen Inc.
• NVE Corporation
• Samsung Electronics Co. Ltd
• Spin Memory
• Taiwan Semiconductor Manufacturing
• Toshiba Corporation

第12章 略語一覧

第13章 参照リンク

第14章 結論

第15章 調査範囲

Global Magneto Resistive RAM Market Overview

According to SPER Market Research, the Global Magneto Resistive RAM Market is estimated to reach USD 30.22 billion by 2032 with a CAGR of 32.97%.

Magneto resistive Random Access Memory (MRAM) is a type of non-volatile memory that uses magnetic fields to store and access data. Unlike traditional Random Access Memory (RAM) which stores data using electronic charges, MRAM uses the magnetic spin of electrons to store data.

MRAM is made up of two basic components: a magnetic storage layer and a magnetic tunnel junction (MTJ). The magnetic storage layer is made up of a thin film of a magnetic material such as iron, cobalt, or nickel. The MTJ is a thin insulating layer sandwiched between two magnetic layers, with the magnetic orientation of the two layers being fixed perpendicular to each other. When an electric current is passed through the MTJ, the magnetic orientation of the magnetic storage layer can be flipped, allowing data to be written and stored.

One of the main advantages of MRAM is its non-volatile nature, meaning that data is retained even when the power is turned off. This makes MRAM a promising candidate for a variety of applications, including in computers, smartphones, and other electronic devices. In addition to its non-volatile nature, MRAM also offers fast read and write speeds, high endurance, and low power consumption. These characteristics make MRAM a potentially disruptive technology that could eventually replace traditional forms of memory such as Dynamic RAM (DRAM) and Flash memory. While MRAM is currently more expensive than traditional memory technologies, ongoing research and development is expected to bring down the cost and increase the scalability of MRAM, making it a more viable option for widespread adoption in the future.

Impact of COVID-19 on the Global Magneto Resistive RAM Market

The COVID-19 pandemic has had a significant impact on the global economy and on the Magneto Resistive RAM (MRAM) market. MRAM is a type of non-volatile memory that uses magnetic storage elements instead of electric charges to store data, making it faster and more energy-efficient than other types of memory.

One of the major impacts of the pandemic on the MRAM market has been a slowdown in production and supply chain disruptions. Many manufacturers of MRAM chips have had to temporarily shut down or reduce production due to lockdowns and other measures to control the spread of the virus. This has led to shortages of MRAM chips and higher prices for consumers.

However, the pandemic has also created new opportunities for MRAM in certain industries. For example, the increased demand for remote work and online education has led to a surge in demand for data center infrastructure, which in turn has driven demand for high-performance memory solutions like MRAM.

Overall, the long-term impact of the pandemic on the MRAM market is likely that the demand for fast, energy-efficient memory solutions will continue to grow as more industries shift towards digitalization and remote work.

Scope of the Report:

Report Metric Details

Market size available for years 2019-2032

Base year considered 2021

Forecast period 2022-2032

Segments covered By Type, By Offering, By Application

Regions covered Asia-Pacific, Europe, Middle East and Africa, North America, Latin America

Companies Covered

Avalanche Technology Inc, Everspin Technology Inc, Honeywell International Inc, Numen Inc, NVE Corporation, Samsung Electronics Co. Ltd, Spin Memory, Taiwan Semiconductor Manufacturing, Toshiba Corporation

Global Magneto Resistive RAM Market Segmentation:

By Type: Based on the Type, Global Magneto Resistive RAM Market is segmented as; Toggle MRAM, Spin-Transfer Torque MRAM.

By Offering: Based on the Offering, Global Magneto Resistive RAM Market is segmented as; Embedded, Stand-alone.

By Application: Based on the Application, Global Magneto Resistive RAM Market is segmented as; Aerospace and Defence, Automotive, Consumer Electronics,

Enterprises Storage, Others.

By Region: This report also provide the data for key regional segments of Asia-Pacific, Europe, Middle East and Africa, North America, Latin America

Table of Contents

1. Introduction

• 1.1. Scope of the report
• 1.2. Market segment analysis

2. Research Methodology

• 2.1 Research data source
  • 2.1.1 Secondary data
  • 2.1.2 Primary data
  • 2.1.3 SPER's internal database
  • 2.1.4 Premium insight from KOL's
• 2.2 Market size estimation
  • 2.2.1 Top-down and Bottom-up approach
• 2.3 Data triangulation

3. Executive Summary

4. Market Dynamics

• 4.1. Driver, Restraint, Opportunity and Challenges analysis
  • 4.1.1 Drivers
  • 4.1.2 Restraints
  • 4.1.3 Opportunities
  • 4.1.4 Challenges
• 4.2. COVID-19 Impacts of the Global Magneto Resistive RAM Market

5. Market variables and outlook

• 5.1. SWOT analysis
  • 5.1.1 Strengths
  • 5.1.2 Weaknesses
  • 5.1.3 Opportunities
  • 5.1.4 Threats
• 5.2. PESTEL analysis
  • 5.2.1 Political landscape
  • 5.2.2 Economic landscape
  • 5.2.3 Social landscape
  • 5.2.4 Technological landscape
  • 5.2.5 Environmental landscape
  • 5.2.6 Legal landscape
• 5.3. PORTER'S five forces analysis
  • 5.3.1 Bargaining power of suppliers
  • 5.3.2 Bargaining power of Buyers
  • 5.3.3 Threat of Substitute
  • 5.3.4 Threat of new entrant
  • 5.3.5 Competitive rivalry
• 5.4. Heat map analysis

6. Competitive Landscape

• 6.1 Global Magneto Resistive RAM Manufacturing Base Distribution, Sales Area, Product Type
• 6.2 Mergers & Acquisitions, Partnerships, Product Launch, and Collaboration in Global Magneto Resistive RAM Market

7. Global Magneto Resistive RAM Market, By Type, 2019-2032 (USD Million)

• 7.1 Spin-transfer Torque MRAM
• 7.2 Toggle MRAM

8. Global Magneto Resistive RAM Market, By Offering, 2019-2032 (USD Million)

• 8.1 Embedded
• 8.2 Stand-alone

9. Global Magneto Resistive RAM Market, By Application, 2019-2032 (USD Million)

• 9.1 Aerospace and Defence
• 9.2 Automotive
• 9.3 Consumer Electronics
• 9.4 Enterprise Storage
• 9.5 Robotics
• 9.6 Others

10. Global Magneto Resistive RAM Market, By Region, 2019-2032 (USD Million)

• 10.1 Global Magneto Resistive RAM Market Size and Market Share by Region (2019-2025)
• 10.2 Global Magneto Resistive RAM Market Size and Market Share by Region (2026-2032)
• 10.3 Asia-Pacific
  • 10.3.1 Australia
  • 10.3.2 China
  • 10.3.3 India
  • 10.3.4 Japan
  • 10.3.5 South Korea
  • 10.3.6 Rest of Asia-Pacific
• 10.4 Europe
  • 10.4.1 France
  • 10.4.2 Germany
  • 10.4.3 Italy
  • 10.4.4 Spain
  • 10.4.5 United Kingdom
  • 10.4.6 Rest of Europe
• 10.5 Middle East and Africa
  • 10.5.1 Kingdom of Saudi Arabia
  • 10.5.2 United Arab Emirates
  • 10.5.3 Rest of Middle East & Africa
• 10.6 North America
  • 10.6.1 Canada
  • 10.6.2 Mexico
  • 10.6.3 United States
• 10.7 Latin America
  • 10.7.1 Argentina
  • 10.7.2 Brazil
  • 10.7.3 Rest of Latin America

11. Company Profiles

• 11.1 Avalanche Technology Inc.
  • 11.1.1 Company details
  • 11.1.2 Financial outlook
  • 11.1.3 Product summary
  • 11.1.4 Recent developments
• 11.2 Everspin Technology Inc.
  • 11.2.1 Company details
  • 11.2.2 Financial outlook
  • 11.2.3 Product summary
  • 11.2.4 Recent developments
• 11.3 Honeywell International Inc.
  • 11.3.1 Company details
  • 11.3.2 Financial outlook
  • 11.3.3 Product summary
  • 11.3.4 Recent developments
• 11.4 Numen Inc.
  • 11.4.1 Company details
  • 11.4.2 Financial outlook
  • 11.4.3 Product summary
  • 11.4.4 Recent developments
• 11.5 NVE Corporation
  • 11.5.1 Company details
  • 11.5.2 Financial outlook
  • 11.5.3 Product summary
  • 11.5.4 Recent developments
• 11.6 Samsung Electronics Co. Ltd
  • 11.6.1 Company details
  • 11.6.2 Financial outlook
  • 11.6.3 Product summary
  • 11.6.4 Recent developments
• 11.7 Spin Memory
  • 11.7.1 Company details
  • 11.7.2 Financial outlook
  • 11.7.3 Product summary
  • 11.7.4 Recent developments
• 11.8 Taiwan Semiconductor Manufacturing
  • 11.8.1 Company details
  • 11.8.2 Financial outlook
  • 11.8.3 Product summary
  • 11.8.4 Recent developments
• 11.9 Toshiba Corporation
  • 11.9.1 Company details
  • 11.9.2 Financial outlook
  • 11.9.3 Product summary
  • 11.9.4 Recent developments

12. List of Abbreviations

13. Reference Links

14. Conclusion

15. Research Scope