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窒化ガリウム (GaN) 産業用デバイスの世界市場:2015年〜2021年

GaN Industrial Devices Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2015 - 2021

発行 Transparency Market Research 商品コード 332677
出版日 ページ情報 英文 155 Pages
納期: 即日から翌営業日
価格
本日の銀行送金レート: 1USD=114.77円で換算しております。
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窒化ガリウム (GaN) 産業用デバイスの世界市場:2015年〜2021年 GaN Industrial Devices Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2015 - 2021
出版日: 2015年05月22日 ページ情報: 英文 155 Pages
概要

窒化ガリウム (GaN) 産業用デバイスは、自動車、防衛、IT、軍、航空宇宙、送電システムといった様々な分野での用途が広がっており市場成長を促進しています。

当レポートでは、世界の窒化ガリウム (GaN) 産業用デバイス市場について調査分析を行い、市場概要、市場の促進因子および抑制因子、種類別、用途別、地域別のセグメントごとに考察するとともに、2015年〜2021年の予測、主要企業などについてまとめています。

第1章 はじめに

第2章 エグゼクティブサマリー

第3章 世界のGaN産業用デバイス市場の概要

  • イントロダクション
  • 市場の進化
  • 市場促進因子
  • 世界のGaN産業用デバイス市場の市場魅力分析
  • 世界のGaN RFデバイス市場:サプライチェーン分析
  • 世界のGaN RFデバイス市場:ファウンドリ
  • 世界のGaN産業用デバイス市場:M&A
  • 世界のGaN RFデバイス市場:最近の資金調達活動
  • 競合状況

第4章 世界のGaN RFデバイスデバイス市場分析:高電子移動度トランジスタ (HEMT)

  • イントロダクション
  • GaNとシリコンFET
  • マイクロ波周波数帯域比較 (Si、SiGe、GaAs、その他)
  • 高電力産業用トランジスター比較 (GaN、Si、Sic)
  • 電力産業向けGaNデバイスの既存の製品
  • HEMTのコスト分析:GaN/SiC
  • 世界のHEMT市場の収益:2014年〜2021年
  • エピタキシー法
  • 半絶縁性GaN基板

第5章 世界のGaN NEMT市場の収益:用途別:2014年〜2021年

  • 概要
  • WiMAX/LTE市場
  • 無線電話インフラ:基地局 (BTS) 市場
  • CATV市場
  • V-SAT市場
  • 衛星市場
  • 防衛市場
  • その他 (10%以上のシェア)

第6章 GaN技術の成熟

  • 無線周波数 (RF)
  • 発光ダイオード (LED)
  • 電力デバイス

第7章 窒化ガリウム (GaN) 産業用デバイス市場の収益:種類別:2014年〜2021年

  • イントロダクション
  • 電力用デバイス
  • 光電子工学

第8章 世界のGaN産業用デバイスT市場の収益と出荷量:用途別:2014年〜2021年

  • 概要
  • 無線周波数 (RF)
  • 発光ダイオード (LED)
  • 電力デバイス

第9章 世界のGaN産業用デバイス市場の収益:地域別:2014年〜2021年

  • 概要
  • 欧州
  • アジア太平洋地域
  • 中東/アフリカ
  • ラテンアメリカ

第10章 企業プロファイル

  • Fujitsu Limited
  • GaN Systems Inc.
  • Freescale Semiconductor Inc.
  • Efficient Power Conversion Corporation
  • International Rectifier
  • NXP Semiconductors N.V.
  • Renesas Electronics Corporation
  • Toshiba Corporation
  • Texas Instruments Inc.
  • International Quantum Epitaxy plc
  • Nichia Corporation
  • Cree Inc.
  • RF Micro Devices Inc.

図表

目次

The report provides a strategic analysis of the global GaN industrial devices market. The global GaN industrial devices market has been segmented on the basis of types, applications and geography. Furthermore, GaN HEMT (High Electron Mobility Transistor) has been bifurcated on the basis of their application areas. The cross sectional analysis of global GaN industrial devices market across the five major geographical segments has also been covered under the purview of this report. Increasing application of GaN based industrial devices in various areas such as automotive, defense, information and communication technology, military, aerospace and power distribution systems is primarily driving the growth of the market. GaN is being widely implemented in radio frequency (RF) devices, light-emitting diodes (LEDs) and power electronics, owing to its ability to operate at high frequency, power density and high temperature.

Moreover, increasing demand from defense sector for enhanced battlefield performance has consequently accelerated the demand for GaN industrial devices. The major application of GaN in military is its usage in HEMT (High Electron Mobility Transistor), which is essential for high frequency operations. Another factor fuelling the growth of the global GaN industrial devices market is the introduction of advanced technology and large scale production of GaN. Due to rapid improvement in GaN technology, many companies are coming up with new innovative products that are cost-effective and have better design and performance. The conjoint effect of all these drivers and trends is thus set to bolster the growth of the global GaN industrial devices market during the forecast period from 2015-2021.

GaN has found a strong foothold in various applications of power electronics such as security systems, cruise control, inverters, auxiliary power, battery management and voltage converters, due to the rapid development in material processing technologies. Gallium nitride promises to revolutionize the electronics industry and serve as an attractive replacement for silicon devices for applications in the field of electro-mobility and photovoltaic. Developments in improving the breakdown voltage of GaN based devices are indicating the future for the next generation hybrid electric vehicles (HEVs). However, the production cost of pure Gallium nitride is significantly higher compared to silicon carbide, which has been a dominant semiconductor material for high voltage power electronics for a decade. This could be one of the major challenges in the commercialization of pure GaN based devices.

The competitive profiling of the key players in the market and their market share across the five geographic segments namely, North America, Europe, Asia Pacific, Middle East and Africa and Latin America have been covered under the scope of the report. Moreover, the different business strategies that have been adopted by the leading players have been covered in this report. The market attractiveness analysis and supply chain analysis have been included in the report in order to provide an insight into the market dynamics.

An exhaustive analysis of the market dynamics namely, the market drivers, restraints and opportunities has been also included under the purview of the report. Market dynamics are the factors that impact the growth of the market and thus help to understand the current trends in the market. Thus, the report provides a detailed analysis of the global GaN industrial devices market and also offers the forecast from 2015 to 2021.

Some of the key players in the GaN industrial devices market are, Fujitsu Limited (Tokyo, Japan), GaN Systems Inc (Canada, US), Freescale Semiconductor Inc (Texas, US), Efficient Power Conversion Corporation (California, US), International Rectifier (California, US), NXP Semiconductors N.V. (Netherlands), Renesas Electronics Corporation (Tokyo, Japan), Toshiba Corporation (Tokyo, Japan), Texas Instruments Inc. (Texas, US), International Quantum Epitaxy plc (United Kingdom), Nichia Corporation (Tokushima, Japan), Cree Inc (North Carolina, US) and RF Micro Devices (North Carolina, US) among others.

The global GaN industrial devices market has been segmented into:

GaN HEMT market, by Application

  • WiMAX/LTE market
  • Wireless phone infrastructure: Base stations (BTS) market
  • CATV market
  • V-SAT market
  • Satellite market
  • Defense market
  • Others

GaN industrial devices market, by Types:

  • Power devices
    • Schottky diode
    • Metal oxide semiconductor field effect transistor (MOSFETs)
    • High electron mobility transistors (HEMTs)
    • Others (rectifiers, other advanced transistor types)
  • Opto electronics
    • Light-emitting diodes
    • Laser diodes

GaN industrial devices market, by Application

  • Radio frequency (RF)
  • Light-emitting diodes (LED)
  • Power device

GaN industrial devices market, by geography: The market is broadly segmented on the basis of geography into:

  • North America
    • United States
    • Canada
    • Others)
  • Europe
    • Germany
    • United Kingdom
    • Italy
    • France
    • Rest of Europe
  • Asia Pacific
    • APEJ
      • China
      • India
      • Rest of APEJ
    • Japan
  • Middle East and Africa (MEA)
    • Saudi Arabia
    • South Africa
    • Others
  • Latin America
    • Brazil
    • Others

Table of Contents

Chapter 1 - Preface

  • 1.1. Report description
  • 1.2. Research scope
  • 1.3. Research methodology

Chapter 2 - Executive Summary

CHAPTER 3 - Global GaN Industrial Devices Market Overview

  • 3.1. Introduction
  • 3.2. Market Evolution
  • 3.3. Market drivers
    • 3.3.1. Supply side drivers
      • 3.3.1.1. Introduction of advanced technology and large scale production
    • 3.3.2. Demand side drivers
      • 3.3.2.1. Increasing application areas for GaN based devices
      • 3.3.2.2. Growing demand for enhanced battlefield performance from defense sector
    • 3.3.3. Economic drivers
      • 3.3.3.1. Growing economy in developing countries
    • 3.3.4. Impact analysis of drivers
    • 3.3.5. Restraints
      • 3.3.5.1. High cost of pure Gallium Nitride
    • 3.3.6. Opportunities
      • 3.3.6.1. Powering the next-generation Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)
  • 3.4. Market Attractiveness Analysis for Global GaN Industrial Devices Market Recommendations
  • 3.5. Global GaN RF Devices Market: Supply Chain Analysis
    • 3.5.1. Overview
      • 3.5.1.1. Raw Material Acquisition
      • 3.5.1.2. Wafer Coating and Manufacturing
      • 3.5.1.3. Device Fabrication
      • 3.5.1.4. Etching and Doping
      • 3.5.1.5. Cutting and Mounting
      • 3.5.1.6. Assembly, Packaging and Testing
    • 3.5.2. Companies Forming An Integral Part In The Global Supply Chain of RF Devices Market
      • 3.5.2.1. North America
      • 3.5.2.2. Europe
      • 3.5.2.3. APAC
      • 3.5.2.4. Rest of the World
  • 3.6. Global GaN RF Devices Market: Foundries
    • 3.6.1. North America
    • 3.6.2. Europe
    • 3.6.3. APAC
    • 3.6.4. Rest of the World
  • 3.7. Global GaN Industrial Devices Market: Mergers and acquisitions
  • 3.8. Global GaN RF Devices Market: Recent funding activities
  • 3.9. Competitive landscape
    • 3.9.1. Market positioning of key players, 2014

Chapter 4 - Global GaN RF Market Analysis: High Electron Mobility Transistor (HEMT)

  • 4.1 Introduction
  • 4.2 GaN versus Silicon FET
  • 4.3 Microwave frequency bands comparison (Si, SiGe, GaAs and others)
  • 4.4 High-power industry transistors comparison (GaN, Si and Sic)
  • 4.5 Existing product portfolio for power industry GaN devices
  • 4.6 Cost analysis HEMT process GaN/SiC
  • 4.7 Global HEMT market revenue, 2014 - 2021 (USD million)
    • 4.7.1 Revenue forecast, 2014 - 2021 (USD Mn)
      • 4.7.1.1 4 inch revenue forecast, 2014 - 2021 (USD Mn)
      • 4.7.1.2 Others
      • 4.7.1.3 Others revenue forecast, 2014 - 2021 (USD Mn)
  • 4.8 Epitaxy techniques
    • 4.8.1 Growth potential
  • 4.9 Semi-insulating GaN substrates
    • 4.9.1 Manufacturers

Chapter 5 - Global GaN HEMT Market Revenue: By Application, 2014 - 2021 (USD Mn)

  • 5.1 Overview
    • 5.1.1 Global GaN HEMT Market Revenue, By Application, 2014 - 2021 (USD million)
  • 5.2 WiMAX/LTE market
    • 5.2.1 WiMAX/LTE market revenue and forecast, 2014 - 2021 (USD million)
  • 5.3 Wireless phone infrastructure: Base stations (BTS) market
    • 5.3.1 Wireless phone infrastructure: base stations (BTS) market revenue and forecast, 2014 - 2021 (USD million)
  • 5.4 CATV market
    • 5.4.1 CATV market revenue and forecast, 2014 - 2021 (USD million)
  • 5.5 V-SAT market
    • 5.5.1 V-SAT market revenue and forecast, 2014 - 2021 (USD million)
  • 5.6 Satellite market
    • 5.6.1 Satellite market revenue and forecast, 2014 - 2021 (USD million)
  • 5.7 Defense market
    • 5.7.1 Defense market revenue and forecast, 2014 - 2021 (USD million)
  • 5.8 Others (>10% share)
    • 5.8.1 Others (industrial, power, solar and wind sectors) market revenue and forecast, 2014 - 2021 (USD million)

Chapter 6 - Maturity of GaN Technology

  • 6.1. Radio frequency (RF)
    • 6.1.1. Field failure rate
    • 6.1.2. Reliability issue
    • 6.1.3. Development trend
  • 6.2. Light-emitting diode (LED)
    • 6.2.1. Field failure rate
    • 6.2.2. Reliability issue
    • 6.2.3. Development trend
  • 6.3. Power devices
    • 6.3.1. Field failure rate
    • 6.3.2. Reliability issues
    • 6.3.3. Development trend

Chapter 7 - Gallium Nitride (GaN) Industrial Devices Market Revenue, By Types, 2014 - 2021 (USD Mn)

  • 7.1 Introduction
  • 7.2 Power devices
    • 7.2.1 Global power devices market revenue and forecast, by types 2014 - 2021 (USD million)
    • 7.2.2 Schottky diode
    • 7.2.3 Metal oxide semiconductor field effect transistor (MOSFETs)
    • 7.2.4 High electron mobility transistors (HEMTs)
    • 7.2.5 Others (rectifiers, other advanced transistor types)
  • 7.3 Opto electronics
    • 7.3.1 Global GaN opto electronics market revenue and forecast, by types, 2014 - 2021 (USD million)
    • 7.3.2 Light emitting diodes
    • 7.3.3 Laser diodes

Chapter 8 - Global GaN Industrial Devices Market Revenue and Shipment Volume, by Applications, 2014 - 2021 (USD Mn and Million Units)

  • 8.1 Overview
  • 8.2 Radio frequency (RF)
    • 8.2.1 Technology roadmaps
    • 8.2.2 Technology Roadmap RF
    • 8.2.3 Major Players
    • 8.2.4 Resources distribution
    • 8.2.5 Revenue and Shipment Volume, 2010 - 2021 (USD Mn and Million Units)
  • 8.3 Light-emitting diode (LED)
    • 8.3.1 Technology roadmaps
    • 8.3.2 Technology Roadmap LED
    • 8.3.3 Major Players
    • 8.3.4 Resources distribution
    • 8.3.5 Revenue and Shipment Volume, 2010 - 2021 (USD Mn and Million Units)
  • 8.4 Power device
    • 8.4.1 Technology roadmaps
    • 8.4.2 Technology Roadmap Power Device
    • 8.4.3 Major Players
    • 8.4.4 Resources distribution
    • 8.4.5 Revenue and Shipment Volume, 2010 - 2021 (USD Mn and Million Units)

Chapter 9 - Global GaN Industrial Devices Market Revenue, By Geography, 2014 - 2021 (USD Million)

  • 9.1 Overview
    • 9.1.1 Global GaN industrial devices market revenue share, 2014 and 2021 (%)
    • 9.2.1 North America GaN industrial devices market revenue, and forecast, 2014 - 2021 (USD million)
      • 9.2.2.1 U.S. GaN industrial devices market revenue, and forecast, 2014 - 2021 (USD million)
      • 9.2.3.1 Canada GaN industrial devices market revenue, and forecast, 2014 - 2021 (USD million)
      • 9.2.4.1 Others GaN industrial devices market revenue, and forecast, 2014 - 2021 (USD million)
  • 9.3 Europe GaN industrial devices market
    • 9.3.1 Europe GaN industrial device market size and forecast, 2014 - 2021 (USD million)
      • 9.3.2.1 Germany GaN industrial device market size and forecast, 2014 - 2021 (USD million)
      • 9.3.3.1 UK GaN industrial device market size and forecast, 2014 - 2021 (USD million)
      • 9.3.4.1 Italy GaN industrial device market size and forecast, 2014 - 2021 (USD million)
      • 9.3.5.1 France GaN industrial device market size and forecast, 2014 - 2021 (USD million)
      • 9.3.6.1 ROE GaN industrial device market size and forecast, 2014 - 2021 (USD million)
  • 9.4 Asia Pacific GaN industrial devices market
    • 9.4.1 Asia Pacific GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
    • 9.4.2 APEJ GaN industrial devices market
      • 9.4.2.1 APEJ GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
      • 9.4.2.2 China GaN industrial devices market
        • 9.4.2.2.1 China GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
      • 9.4.2.3 India GaN industrial devices market
        • 9.4.2.3.1 India GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
      • 9.4.2.4 Rest of APEJ GaN industrial devices market
        • 9.4.2.4.1 Rest of APEJ GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
    • 9.4.3 Japan GaN industrial devices market
      • 9.4.3.1 Japan GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
  • 9.5 Middle East and Africa (MEA) GaN industrial devices market
    • 9.5.1 Middle East and Africa (MEA) GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
    • 9.5.2 Saudi Arabia GaN industrial devices market
      • 9.5.2.1 Saudi Arabia GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
    • 9.5.3 South Africa industrial devices market
      • 9.5.3.1 South Africa GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
    • 9.5.4 Others GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
  • 9.6 Latin America GaN industrial devices market
    • 9.6.1 Latin America GaN industrial device market size and forecast, 2014 - 2021 (USD million)
      • 9.6.2.1 Brazil GaN industrial device market size and forecast, 2014 - 2021 (USD million)
      • 9.6.3.1 Others GaN industrial device market size and forecast, 2014 - 2021 (USD million)

Chapter 10 - Company Profiles

  • 10.1. Fujitsu Limited
    • 10.1.1. Company overview
    • 10.1.2. Financial overview
    • 10.1.3. Business strategies
    • 10.1.4. Recent developments
  • 10.2. GaN Systems Inc.
    • 10.2.1. Company overview
    • 10.2.2. Financial overview
    • 10.2.3. Business strategies
    • 10.2.4. Recent developments
  • 10.3. Freescale Semiconductor Inc.
    • 10.3.1. Company overview
    • 10.3.2. Financial overview
    • 10.3.3. Business strategies
    • 10.3.4. Recent developments
  • 10.4. Efficient Power Conversion Corporation
    • 10.4.1. Company overview
    • 10.4.2. Financial overview
    • 10.4.3. Business strategies
    • 10.4.4. Recent developments
  • 10.5. International Rectifier
    • 10.5.1. Company overview
    • 10.5.2. Financial overview
    • 10.5.3. Business strategies
    • 10.5.4. Recent developments
  • 10.6. NXP Semiconductors N.V.
    • 10.6.1. Company overview
    • 10.6.2. Financial overview
    • 10.6.3. Business strategies
    • 10.6.4. Recent developments
  • 10.7. Renesas Electronics Corporation
    • 10.7.1. Company overview
    • 10.7.2. Financial overview
    • 10.7.3. Business strategies
    • 10.7.4. Recent developments
  • 10.8. Toshiba Corporation
    • 10.8.1. Company overview
    • 10.8.2. Financial overview
    • 10.8.3. Business strategies
    • 10.8.4. Recent developments
  • 10.9. Texas Instruments Inc.
    • 10.9.1. Company overview
    • 10.9.2. Financial overview
    • 10.9.3. Business strategies
    • 10.9.4. Recent developments
  • 10.10. International Quantum Epitaxy plc
    • 10.10.1. Company overview
    • 10.10.2. Financial overview
    • 10.10.3. Business strategies
    • 10.10.4. Recent developments
  • 10.11. Nichia Corporation
    • 10.11.1. Company overview
    • 10.11.2. Financial overview
    • 10.11.3. Business strategies
    • 10.11.4. Recent developments
  • 10.12. Cree Inc.
    • 10.12.1. Company overview
    • 10.12.2. Financial overview
    • 10.12.3. Business strategies
    • 10.12.4. Recent developments
  • 10.13. RF Micro Devices Inc.
    • 10.13.1. Company overview
    • 10.13.2. Financial overview
    • 10.13.3. Business strategies
    • 10.13.4. Recent developments

List of Figures

  • FIG. 1: Market segmentation: Global GaN Industrial Devices Market
  • FIG. 2: Market Attractiveness Analysis, By Application, 2014
  • FIG. 3: Global GaN RF Devices Market: Supply Chain Analysis
  • FIG. 4: Global GaN industrial devices market positioning of key players, 2014 (Value %)
  • FIG. 5: Mechanism of Gallium Nitride High Electron Mobility Transistor (GaN HEMT)
  • FIG. 6: Global HEMT market revenue, 2014 - 2021 (USD million)
  • FIG. 7: 4 inch revenue forecast, 2014 - 2021 (USD Mn)
  • FIG. 8: Others revenue forecast, 2014 - 2021 (USD Mn)
  • FIG. 9: Global GaN HEMT Market Revenue, By Application, 2014 - 2021 (USD million)
  • FIG. 10: WiMAX/LTE market revenue and forecast, 2014 - 2021 (USD million)
  • FIG. 11: Wireless phone infrastructure : base stations (BTS) market revenue and forecast, 2014 - 2021 (USD million)
  • FIG. 12: CATV market revenue and forecast, 2014 - 2021 (USD million)
  • FIG. 13: V-SAT market revenue and forecast, 2014 - 2021 (USD million)
  • FIG. 14: Satellite market revenue and forecast, 2014 - 2021 (USD million)
  • FIG. 15: Defense market revenue and forecast, 2014 - 2021 (USD million)
  • FIG. 16: Others (industrial, power, solar and wind sectors) market revenue and forecast, 2014 - 2021 (USD million)
  • FIG. 17: Field failure mechanisms in GaN based RF devices
  • FIG. 18: Global GaN industrial devices market revenue share, by types, 2014 and 2021 (%)
  • FIG. 19: Global GaN power devices market revenue and forecast 2014 - 2021 (USD million)
  • FIG. 20: Global GaN opto electronics market revenue and forecast 2014 - 2021 (USD million)
  • FIG. 21: Global GaN industrial devices market revenue share, by applications, 2014 and 2021 (%)
  • FIG. 22: Global GaN industrial devices market volume share, by applications, 2014 and 2021 (%)
  • FIG. 23: Technology Roadmap RF
  • FIG. 24: RF Global GaN Industrial Devices market revenue, volume and forecast, 2010 - 2021 (USD million and million units)
  • FIG. 25: Technology Roadmap LED
  • FIG. 26: LED Global GaN Industrial Devices market revenue, volume and forecast, 2010 - 2021 (USD million and million units)
  • FIG. 27: Technology Roadmap Power Device
  • FIG. 28: Power Device Global GaN Industrial Devices market revenue, volume and forecast, 2010 - 2021 (USD million and million units)
  • FIG. 29: Global GaN industrial devices market revenue share, 2014 and 2021 (%)
  • FIG. 30: North America GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
  • FIG. 31: U.S. GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
  • FIG. 32: Canada GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
  • FIG. 33: Others GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
  • FIG. 34: Europe GaN industrial device market size and forecast, 2014 - 2021 (USD million)
  • FIG. 35: Germany GaN industrial device market size and forecast, 2014 - 2021 (USD million)
  • FIG. 36: UK GaN industrial device market size and forecast, 2014 - 2021 (USD million)
  • FIG. 37: Italy GaN industrial device market size and forecast, 2014 - 2021 (USD million)
  • FIG. 38: France GaN industrial device market size and forecast, 2014 - 2021 (USD million)
  • FIG. 39: ROE GaN industrial device market size and forecast, 2014 - 2021 (USD million)
  • FIG. 40: Asia Pacific GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
  • FIG. 41: APEJ GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
  • FIG. 42: China GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
  • FIG. 43: India GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
  • FIG. 44: Rest of APEJ GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
  • FIG. 45: Japan GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
  • FIG. 46: Middle East and Africa (MEA) GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
  • FIG. 47: Saudi Arabia GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
  • FIG. 48: South Africa GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
  • FIG. 49: Others GaN industrial devices market revenue and forecast, 2014 - 2021 (USD million)
  • FIG. 50: Latin America GaN industrial device market size and forecast, 2014 - 2021 (USD million)
  • FIG. 51: Brazil GaN industrial device market size and forecast, 2014 - 2021 (USD million)
  • FIG. 52: Others GaN industrial device market size and forecast, 2014 - 2021 (USD million)
  • FIG. 53: Fujitsu Limited annual revenue, 2012 - 2014 (USD billion)
  • FIG. 54: Freescale Semiconductor Inc annual revenue, 2012 - 2014 (USD billion)
  • FIG. 55: NXP Semiconductors N.V. annual revenue, 2012 - 2014 (USD billion)
  • FIG. 56: Renesas Electronics Corporation annual revenue, 2011 - 2013 (USD billion)
  • FIG. 57: Toshiba Corporation annual revenue, 2011 - 2013 (USD billion)
  • FIG. 58: Texas Instruments Inc annual revenue, 2012 - 2014 (USD billion)
  • FIG. 59: International Quantum Epitaxy plc annual revenue, 2012 - 2014 (USD billion)
  • FIG. 60: Cree Inc. annual revenue, 2011 - 2013 (USD billion)
  • FIG. 61: RF Micro Devices Inc. annual revenue, 2011 - 2013 (USD billion)

List of Tables

  • TABLE 1: Global GaN Industrial Devices Market Snapshot
  • TABLE 2: Impact analysis of drivers
  • TABLE 3: Impact analysis of drivers
  • TABLE 4: Impact analysis of drivers
  • TABLE 5: Comparison of Physical Properties of Semiconductors
  • TABLE 6: Comparison of Material Properties
  • TABLE 7: Global power devices market revenue and forecast, by types 2014 - 2021 (USD million)
  • TABLE 8: Global GaN opto electronics market revenue and forecast, by types, 2014 - 2021 (USD million)
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