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GaN-On-Si(シリコン基板上の窒化ガリウム)の主要特許分析

GaN-On-Si Key Patent Analysis

発行 SNE Research 商品コード 247705
出版日 ページ情報 英文 110 Pages
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GaN-On-Si(シリコン基板上の窒化ガリウム)の主要特許分析 GaN-On-Si Key Patent Analysis
出版日: 2012年07月09日 ページ情報: 英文 110 Pages
概要

当レポートでは、GaN-On-Siを対象に、その世界的主要特許に関する分析および重要特許のサマリーをもとに、特許認定の全般的トレンド、主要案件のトレンド、問題点を探るほか、主なGaN-On-Si技術の研究開発マップをまとめ、概略以下の構成でお届けします。

第1章 特許分析概要

  • 背景
  • 特許分析の対象範囲

第2章 技法概要および産業トレンド

  • 技法概要
  • 開発トレンド

第3章 特許認定トレンド分析

  • 特許分析の対象範囲と技術分類体系
  • 特許検索結果
  • 特許認定トレンド - 年・国別
  • 特許認定トレンド - 年・技術別
  • 特許認定トレンド - 年・譲受人別(上位10社)
  • 特許認定トレンド - 国・譲受人別(複数件)
  • 特許認定トレンド - 国・譲受人別(単独件)

第4章 主要特許分析の概要

  • 主要特許の選定と現況
  • 国別主要特許一覧
  • 主要特許の詳細分析方法

第5章 アルミニウム含有バッファ層に対する主要特許の分析

  • 主要特許の現況
  • 主要特許トレンド分析
  • 技術開発チャート

第6章 多層バッファ層に対する主要特許

  • 主要特許の現況
  • 主要特許トレンド分析
  • 技術開発チャート

第7章 他形式のバッファ層に対する主要特許(1)

  • 主要特許の現況
  • 主要特許トレンド分析
  • 技術開発チャート

第8章 他形式のバッファ層に対する主要特許(2)

  • 主要特許の現況
  • 主要特許トレンド分析
  • 技術開発チャート

第9章 基板パターン構造に対する主要特許の分析

  • 主要特許の現況とトレンド分析

第10章 結論と将来予測

  • 特許認定トレンド分析の結果
  • 大手企業の主要技術トレンド
  • 大手企業の特許ネットワーク
  • 特許の問題点
  • 結論・将来予測

第11章 特許サマリー

目次
Product Code: R068NL2012005

Abstract

The size of sapphire substrates is increasing to response to the current trend toward the low LED price, but it is actually hard to grow sapphire single crystals to a large size. For this reason, research on adopting silicon that has commonly used in the semi-conductor process to the LED manufacturing process instead of sapphire wafer has recently boomed in recent years.

Silicon substrates, as low-cost, large-sized substrates, have a lot of advantages over sapphire substrates typically used for nitride-based LEDs in terms of thermal conductivity, electric conductivity, and high processability. Nevertheless, they have not reached the commercialization stage yet, for the reasons that it is hard to control cracks generated by a wide difference in thermal expansion coefficients between silicon and GaN materials, and the energy band of Si substrates is opaque, causing a large optical loss.

There has been considerable progress in its performance, however, as it came possible to control the cracks caused by the difference in thermal expansion coefficients to a certain degree with the recent development of epitaxial technologies. In addition, the light loss issue caused by Si substrates themselves is considerably resolved by using the wafer bonding process using second substrates. Recently Korean companies such as Samsung and LG as well as leading companies such as Phillips, and OSRAM in the LED industry are recently showing aggressive research activities.

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In this circumstance, SNE Research has published a report analyzing key parents related to GaN-On-Si (Gallium Nitride on Silicon) technologies. This report covers Korean, U.S., Japanese, European, and PCT patents that have published until March 3, 2012; qualitative in-depth analysis of total 195 effective patents selected is provided.

In relation to the market expansion of GaN devices, technology development on GaN-On-Si becomes active. The report provides the analysis of patenting trend on the GaN-On-Si related technology by year/technology/assignee and technology flow charts of the key technologies, which is expected to be very helpful to look into the technology development trend and key patents in the field of GaN-On-Si.

The in-depth key patent analysis provided by the report is focused on the U.S. patent, covering the current status of key patents, analysis of key patent trends, and technology flow charts. The conclusion part is composed of the result of the overall patenting trend (summary), and the key technology trend of major companies, patent issues, and implications. In addition, patent summaries of the 97 patents (KR, US, JP, EP, and PCT) are attached.

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The report features

  • Anaysis of global major patents (195 cases), and 97 key patent summaries in 109 pates in total
  • Analysis of the overall patenting trend, key patent trends, and patent issues.
  • Technology development maps on major GaN on Si technologies

Table of Contents

1. Overview of patent analysis

  • Background
  • Patent analysis scope

2. Technical overview and industrial trend

  • Technical overview
  • Development trend

3. Patenting trend analysis

  • Patent analysis scope and technology classification system
  • Patent search result
  • Patenting trend l by year/county
  • Patenting trend l by year/technology
  • Patenting trend l by year/ assignee(TOP 10)
  • Patenting trend l by country/assignee(more than two cases)
  • Patenting trend l by country/assignee (one case)

4. Overview of key patent analysis

  • Key patent selection and current status
  • Key parent list by country
  • In-depth key patent analysis method

5. Analysis of Key Patents on Al-containing buffer layers

  • Current status of key patent
  • Key patent trend analysis
  • Technology development chart

6. Analysis of Key Patents on multi-layer buffer layers

  • Current status of key patent
  • Key patent trend analysis
  • Technology development chart

7. Analysis of Key Patents on other buffer layers (1)

  • Current status of key patent
  • Key patent trend analysis
  • Technology development chart

8. Analysis of Key Patents on other buffer layers (2)

  • Current status of key patent
  • Key patent trend analysis
  • Technology development chart

9. Analysis of Key Patents on substrate patterning

  • Current status of key patents and trend analysis

10. Conclusions/implications

  • Result of patenting trend analysis
  • Key technology trend of major companies
  • Patent network of major companies
  • Patent issues
  • Conclusions/implications

11. Patent summary

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