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GaN(窒化ガリウム) RF半導体デバイスの世界市場:成長率、動向および予測分析(2020年~2025年)

GaN RF Semiconductor Devices Market - Growth, Trends, and Forecast (2020 - 2025)

出版日: | 発行: Mordor Intelligence LLP | ページ情報: 英文 120 Pages | 納期: 2-3営業日

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GaN(窒化ガリウム) RF半導体デバイスの世界市場:成長率、動向および予測分析(2020年~2025年)
出版日: 2020年01月01日
発行: Mordor Intelligence LLP
ページ情報: 英文 120 Pages
納期: 2-3営業日
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  • 目次
概要

世界のGaN(窒化ガリウム) RF半導体デバイス市場の規模は、2018年に4億6,093万米ドルと評価され、2019年から2024年の予測期間中にCAGR 23.20%で成長し、2024年までに15億9,736万米ドルに達すると予想されています。モノのインターネット(IoT)の成長、5Gネットワークの出現、様々な業界の分野にわたる幅広いアプリケーションが、RF GaN半導体市場に大きな成長の機会を提供する見通しです。

当レポートでは、世界のGaN(窒化ガリウム) RF半導体デバイス市場について調査分析し、市場概要、市場力学、市場区分、地域別の市場分析、競合情勢、主要企業などについて、体系的な情報を提供しています。

目次

第1章 イントロダクション

  • 調査の成果
  • 調査の前提条件
  • 調査範囲

第2章 調査方法

第3章 エグゼクティブサマリー

第4章 市場力学

  • 市場概況
  • 市場成長要因
    • ロングタームエボリューションワイヤレスネットワークの普及
  • 市場阻害要因
    • SiCとの競合
  • 業界バリューチェーン分析
  • 業界の魅力 - ファイブフォース分析
    • バイヤー/消費者の交渉力
    • サプライヤーの交渉力
    • 新規参入の脅威
    • 代替製品の脅威
    • 業界内の競合の激しさ

第5章 市場区分

  • アプリケーション別
    • 防衛・航空宇宙
    • テレコム
    • 家電
    • 自動車
    • 工業
    • その他(データセンター、再生可能エネルギーなど)
  • 地域
    • 北米
    • 欧州
    • アジア太平洋地域
    • 中南米
    • 中東・アフリカ

第6章 競合情勢

  • 企業プロファイル
    • GaN Systems
    • NXP Semiconductor
    • Qorvo Inc.
    • Wolfspeed Inc.(A CREE Company)
    • Broadcom Inc.
    • Efficient Power Conversion
    • 富士通セミコンダクター
    • NTTアドバンステクノロジ
    • Texas Instruments

第7章 投資分析

第8章 市場機会および将来動向

目次
Product Code: 57345

Market Overview

The GaN RF semiconductor devices market was valued at USD 567.87 million in 2019 and is expected to reach a value of USD 1967.6 million by 2025, at a CAGR of 23.20%, during the forecast period (2020 - 2025). Owing to the growth of the Internet of Things (IoT), the advent of 5G network and widespread applications across various industry verticals will offer immense growth opportunities to the RF GaN semiconductors market.

  • The successful implementation of IoT needs data transfer over a network without human-to-computer interaction. The increasing implementation of IoT will result in signal congestion and will demand the use of GaN technology that can amplify power, capacity, and the bandwidth required for communicating with all interconnected devices.
  • Development of MEMS technology are an integral part of IoT devices, and will also have a positive impact on the GaN RF semiconductor devices market.
  • Increasing demand for smartphones, gaming devices, laptops, and TVs is expected to drive the GaN semiconductor devices market in the consumer electronics sector.

Scope of the Report

Gallium nitride (GaN) is a material that can be used in the production of semiconductor power devices as well as RF components and light emitting diodes (LEDs). GaN has demonstrated the capability to be the displacement technology for silicon semiconductors in power conversion, RF, and analog applications. GaN RF semiconductor devices can be used in various application depending upon the requirement.

Key Market Trends

Proliferation of Long Term Evolution Wireless Networks to Drive the Market Growth

  • Rise in Long Term Evolution (LTE) wireless networks is one of the primary growth factors for the GaN RF semiconductor devices market. The constantly increasing data consumption has resulted in the growth of commercial networks and will induce network carriers to adopt next-generation LTE networks, such as 4G and 5G.
  • Due to its ability to provide higher frequency data bandwidth connections, GaN RF technology will soon be the ideal choice for network service providers. GaN RF devices help in ensuring that the device can generate maximum frequency at the necessary band, and also prevent any interference from other frequency bands.
  • The deployment of GaN RF power devices will allow LTE devices to offer speeds that allow consumers to upload and download content, such as music and photographs, and also play online games and watch online TV shows on maximum frequency bands, which will lead to a rise in their adoption.

North America to Hold the Largest Share

  • The growth in GaN semiconductors market in North America strongly correlates with the growth of end-user industries, such as telecom, aerospace & defense, consumer electronics, automotive, industrial, others.
  • Moreover, the presence of leading players in the industry also contributes to the share held by the region. The growth in North America is encouraged by propelling defense sector with wider utilization of GaN-based transistors, military radar and electronic warfare in military applications.
  • The US is the highest spender on the defense budget in the world and is expected to spend USD 640 billion in military and defense in 2018. With Canada expected to follow this trend and increase its defense expenditure, the demand for RF GaN semiconductor devices in defense is expected to drive the market in the region.
  • Also, rising demand from consumer electronic products, such as televisions, laptops, gaming devices, personal computers, and tablet PCs has further fuelled the growth of this market in North America.
  • Moreover, expertise in technology has resulted in the growth of convertible laptops, ultra HD or 4K Television sets, and other various wireless electronics, increasing the demand for RF GaN semiconductor in the consumer electronics market of the region.

Competitive Landscape

The GaN RF semiconductor devices market is neither consolidated nor fragmented. Some of the key players include GaN Systems, NXP Semiconductor, Qorvo Inc., Wolfspeed, Inc.(A CREE Company), Broadcom Inc., Efficient Power Conversion, Fujitsu Semiconductor, NTT Advanced Technology, Texas Instruments, among others.

  • June 2019 - GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, will deliver presentations and display numerous innovative wireless power transfer solutions enabled by GaN at Wireless Power week taking place in London on June 17-21, 2019. GaN power semiconductors are enabling a world without wires for consumer and business devices, spurring the next evolution of convenience, intelligence, and autonomy.
  • June 2019 - Qorvo, a leading provider of innovative RF solutions that connect the world, launched two new gallium nitride (GaN) power amplifier (PA) families for domestic and international Ka-band satcom and X-band phased array radar applications. The solutions, which deliver best-in-class power, linearity and efficiency in a smaller footprint, enable higher system performance while reducing costs.

Reasons to Purchase this report:

  • The market estimate (ME) sheet in Excel format
  • Report customization as per the client's requirements
  • 3 months of analyst support

Table of Contents

1 INTRODUCTION

  • 1.1 Study Deliverables
  • 1.2 Study Assumptions
  • 1.3 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET DYNAMICS

  • 4.1 Market Overview
  • 4.2 Market Drivers
    • 4.2.1 Proliferation of Long Term Evolution Wireless Networks
  • 4.3 Market Restraints
    • 4.3.1 Competition from SiC
  • 4.4 Industry Value Chain Analysis
  • 4.5 Industry Attractiveness - Porter's Five Force Analysis
    • 4.5.1 Bargaining Power of Buyers/Consumers
    • 4.5.2 Bargaining Power of Suppliers
    • 4.5.3 Threat of New Entrants
    • 4.5.4 Threat of Substitute Products
    • 4.5.5 Intensity of Competitive Rivalry

5 MARKET SEGMENTATION

  • 5.1 By Application
    • 5.1.1 Defense and Aerospace
    • 5.1.2 Telecom
    • 5.1.3 Consumer Electronics
    • 5.1.4 Automotive
    • 5.1.5 Industrial
    • 5.1.6 Other Applications (Data Centers, Renewable Energy,etc.)
  • 5.2 Geography
    • 5.2.1 North America
    • 5.2.2 Europe
    • 5.2.3 Asia-Pacific
    • 5.2.4 Latin America
    • 5.2.5 Middle East & Africa

6 COMPETITIVE LANDSCAPE

  • 6.1 Company Profiles
    • 6.1.1 GaN Systems
    • 6.1.2 NXP Semiconductor
    • 6.1.3 Qorvo Inc.
    • 6.1.4 Wolfspeed Inc.(A CREE Company)
    • 6.1.5 Broadcom Inc.
    • 6.1.6 Efficient Power Conversion
    • 6.1.7 Fujitsu Semiconductor
    • 6.1.8 NTT Advanced Technology
    • 6.1.9 Texas Instruments

7 INVESTMENT ANALYSIS

8 MARKET OPPORTUNITIES AND FUTURE TRENDS

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