特集 : 国別レポートが13,000件から検索可能になりました!

特集 : 海外市場の委託調査がセミカスタムベースでお手軽にできます

株式会社グローバルインフォメーション
市場調査レポート
商品コード
704833

世界の高周波窒化ガリウム(RF GaN)市場:材料(SiC基板/窒化ガリウム、シリコン基板/窒化ガリウム)、用途、地域別

RF GaN (Radio-frequency Gallium Nitride) Market - Growth, Trends, and Forecast (2020 - 2025)

出版日: | 発行: Mordor Intelligence LLP | ページ情報: 英文 127 Pages | 納期: 2-3営業日

価格
価格表記: USDを日本円(税抜)に換算
本日の銀行送金レート: 1USD=105.70円
世界の高周波窒化ガリウム(RF GaN)市場:材料(SiC基板/窒化ガリウム、シリコン基板/窒化ガリウム)、用途、地域別
出版日: 2020年01月01日
発行: Mordor Intelligence LLP
ページ情報: 英文 127 Pages
納期: 2-3営業日
担当者のコメント
本レポートは最新情報反映のため適宜更新し、内容構成変更を行う場合があります。ご検討の際はお問い合わせください。
  • 全表示
  • 概要
  • 目次
概要

当レポートでは、世界の高周波窒化ガリウム(RF GaN)市場を調査し、市場の概要、材料・用途・地域別の市場規模の推移と予測、市場動向、市場の成長要因および課題の分析、競合情勢、主要企業のプロファイルなど、包括的な情報を提供しています。

目次

第1章 イントロダクション

  • 調査成果
  • 市場の定義
  • 調査の前提条件

第2章 調査方法

第3章 エグゼクティブサマリー

第4章 市場洞察

  • 市場概要
  • ファイブフォース分析
    • 買い手の交渉力
    • 供給企業の交渉力
    • 新規参入業者の脅威
    • 代替品の脅威
    • 競争企業間の敵対関係
  • 産業バリューチェーン分析
  • 技術ロードマップ

第5章 市場力学

  • 市場の成長要因
    • IoTとスマートシティの浸透
    • 電気自動車とパワーエレクトロニクスの普及
    • 5G実装への移行
  • 市場の阻害要因
    • 原材料と製造コストの高さ

第6章 世界の高周波窒化ガリウム市場:セグメント別

  • 材料別
    • SiC基板/窒化ガリウム
    • シリコン基板/窒化ガリウム
    • その他
  • 用途別
    • 無線インフラ
    • 航空宇宙・防衛
    • ケーブルテレビ(CATV)
    • 衛星通信
    • その他
  • 地域別
    • 北米
    • 欧州
    • アジア太平洋
    • ラテンアメリカ
    • 中東・アフリカ

第7章 企業プロファイル

  • 住友電気
  • RFHIC Corporation
  • Aethercomm Inc.
  • Analog Devices Inc.
  • Cree Inc.
  • GaN Systems Inc.
  • Integra Technologies Inc.
  • M/A-COM Technology Solutions Holdings Inc.
  • Microsemi Corporation
  • 三菱電機
  • NXP Semiconductors NV
  • Qorvo Inc.
  • STMicroelectronics NV
  • 東芝

第8章 投資分析

第9章 市場の将来展望

目次
Product Code: 63835

Market Overview

The RF GaN Market was valued at USD 598 million at a CAGR of 20.2%, during the forecast period (2020 - 2025).

  • With Gallium nitride (GaN) technology continuously evolving, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for cable TV (CATV), VSAT and defense communications.
  • Growing investments by companies concerning 5G technology are further expected to add to the market growth. For Instance, according to Ericsson's Mobility Report of June 2019, More than 10 million 5G subscriptions are projected worldwide by the end of 2019. This is indicative of the fact that the market is poised to grow throughout the forecast period.
  • Companies such as Qorvo, a provider of RF solutions expanded its offering for 5G applications in 2018, with the 28 GHz Gallium Nitride front-end module. This FEM reduces system costs for base station equipment manufacturers as they expand into 5G. The company has shipped around 100 million 5G wireless infrastructure components since January 2018.
  • Some of the prominent players in the industry through strategic partnerships, research & developments, and Mergers & acquisitions have been able to further the technology. This is expected to fuel market growth over the forecast period. For instance, in March 2018, Cree, Inc., acquired the RF Power assets of Infineon Technologies in a move that would allow Cree's Wolfspeed business unit to expand wireless opportunities and enhance its leadership in RF GaN-on-SiC technologies.
  • The RF GaN market is also expected to experience a significant growth, over the forecast period, due to the increasing demand for power electronics that consume less power and are energy efficient. GaN possess dynamic electrical and chemical properties, such as high-voltage breakdown and saturation velocity, which makes them the apt choice for use in a variety of switching devices.

Scope of the Report

GAN stands out in RF applications because of several reasons such as High breakdown field, High saturation velocity, Outstanding thermal properties as they have been instrumental in transmitting signals over long distances or at high-end power levels. This report segments the market by Material (GaN-on-Sic and GaN-on-Silicon), Application (Wireless Infrastructure and Aerospace and Defense), and Geography.

Key Market Trends

Aerospace & Defense is Expected to Hold Significant Share

  • The RF GAN is being increasingly adopted by the military in the fields of military radar and EW system designs as an alternative or replacement for laterally diffused MOSFET (LDMOS) components. This is expected to boost market growth over the forecast period.
  • Through research and development, the players in the industry have been able to further develop the technology which would contribute towards the growth of the market over the forecast period.
  • For instance, in December 2017, Scientists at the Air Force Research Laboratory (AFRL) successfully demonstrated a flexible RF (radio frequency) transistor device based on Gallium Nitride that actually performs under strain and is flexible, and powerful.
  • The Defense Advanced Research Projects Agency (DARPA) is also anticipated to use this product in military radios and electronics that utilize amplifiers. According to the SIPRI, the defense spending of the United States is the highest among others, thus the demand for GaN-based transistors in the military and defense sectors in the region may increase over the forecast period. GaN-based transistor meets the need for improved real-time air traffic control, reduced collisions, and effective navigation system.

Asia-Pacific is Expected to Experience Significant Growth

  • Asia-Pacific is expected to occupy the largest share of the RG GaN market, during the forecast period, due to the established power electronics industry in this region and the presence of several established vendors of RF GaN such as Mitsubishi Electric Corporation (Japan), Toshiba Corporation (Japan), and Sumitomo Electric Industries Ltd. (Japan)
  • With the increasing emissions from the SI and CI powered engines, the region is promoting the usage of electric vehicles that represents a potential opportunity for the RF GAN providers as a new generation GaN are lighter, smaller, and more comfortable to package as well as can be useful to counteract the issues of elevated temperatures.
  • According to the IEA, in 2017, China accounted for 1.23 million electric cars in circulation. Electric car deployment also increased in China. In 2018, around 45% of electric cars were on road in China (a total of 2.3 million), as compared to 39% in 2017. This is expected to boost the adoption of the RF GAN over the forecast period.

Competitive Landscape

The competetive rivalry among the players in the RF GaN market is high owing to the presence of some key players such as Mitsubishi, STM microelectronics, amongst others. Their ability to continually innovate their offerings has allowed them to gain competitive advantage other players. Through research & development, strategic partnerships, and mergers and acquisitions these players have been able to gain a strong foothold in the maret.

  • June 2018 - NXP Semiconductors NV launched new RF GaN wideband power transistors and expanded its Airfast third-generation Si-LDMOS portfolio of macro- and outdoor small-cell solutions to enable next-generation 5G mobile networks.

Reasons to Purchase this report:

  • The market estimate (ME) sheet in Excel format
  • Report customization as per the client's requirements
  • 3 months of analyst support

Table of Contents

1 INTRODUCTION

  • 1.1 Study Deliverables
  • 1.2 Study Assumptions
  • 1.3 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET DYNAMICS

  • 4.1 Market Overview
  • 4.2 Industry Attractiveness - Porter's Five Force Analysis
    • 4.2.1 Threat of New Entrants
    • 4.2.2 Bargaining Power of Buyers/Consumers
    • 4.2.3 Bargaining Power of Suppliers
    • 4.2.4 Threat of Substitute Products
    • 4.2.5 Intensity of Competitive Rivalry
  • 4.3 Introduction to Market Drivers and Restraints
  • 4.4 Market Drivers
    • 4.4.1 Proliferation Of Iot And Smart Cities
    • 4.4.2 Growing Transition Toward 5g Implementation
    • 4.4.3 Proliferation Of Electric Vehicles And Power Electronics
  • 4.5 Market Restraints
    • 4.5.1 High Cost Of Raw Materials And Production Processes

5 TECHNOLOGY SNAPSHOT

  • 5.1 GaN-on-SiC
  • 5.2 GaN-on-Silicon

6 MARKET SEGMENTATION

  • 6.1 By Application
    • 6.1.1 Wireless Infrastructure
    • 6.1.2 Aerospace and Defense
    • 6.1.3 Community Access Television (CATV)
    • 6.1.4 Satellite Communication
    • 6.1.5 Other Applications
  • 6.2 Geography
    • 6.2.1 North America
    • 6.2.2 Europe
    • 6.2.3 Asia-Pacific
    • 6.2.4 Latin America
    • 6.2.5 Middle East and Africa

7 COMPETITIVE LANDSCAPE

  • 7.1 Company Profiles
    • 7.1.1 Sumitomo Electric Industries Ltd
    • 7.1.2 RFHIC Corporation
    • 7.1.3 Aethercomm Inc.
    • 7.1.4 Analog Devices Inc.
    • 7.1.5 Cree Inc.
    • 7.1.6 Integra Technologies Inc.
    • 7.1.7 M/A-COM Technology Solutions Holdings Inc.
    • 7.1.8 Microsemi Corporation (Microchip Technology Incorporated)
    • 7.1.9 Mitsubishi Electric Corporation
    • 7.1.10 NXP Semiconductors NV
    • 7.1.11 Qorvo Inc.
    • 7.1.12 STMicroelectronics NV
    • 7.1.13 Toshiba Corporation

8 INVESTMENT ANALYSIS

9 MARKET OPPORTUNITIES AND FUTURE TRENDS

株式会社グローバルインフォメーション
© Copyright 1996-2020, Global Information, Inc. All rights reserved.