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市場調査レポート

世界のNAND型フラッシュメモリ市場:種類(SLC、MLC、TLC)、構造(2D、3D)、用途(スマートフォン、メモリーカード、タブレット)、地域別(2018年〜2023年)

Global NAND Flash Memory Market - Segmented - by Type (SLC, MLC, and TLC), Structure (2-D Structure and 3-D Structure), Application (Smartphones, Memory Cards, and Tablets), and Region - Growth, Trends, and Forecast (2018 - 2023)

発行 Mordor Intelligence LLP 商品コード 704831
出版日 ページ情報 英文 95 Pages
納期: 即日から翌営業日
価格
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世界のNAND型フラッシュメモリ市場:種類(SLC、MLC、TLC)、構造(2D、3D)、用途(スマートフォン、メモリーカード、タブレット)、地域別(2018年〜2023年) Global NAND Flash Memory Market - Segmented - by Type (SLC, MLC, and TLC), Structure (2-D Structure and 3-D Structure), Application (Smartphones, Memory Cards, and Tablets), and Region - Growth, Trends, and Forecast (2018 - 2023)
出版日: 2018年08月18日 ページ情報: 英文 95 Pages
概要

世界のNAND型フラッシュメモリ市場の2018年から2023年のCAGR(複合年間成長率)は9.1%になる見通しです。

当レポートでは、世界のNAND型フラッシュメモリ市場を調査し、市場の概要、タイプ・構造・用途・地域別の市場規模の推移と予測、市場動向、市場の成長要因および阻害要因の分析、競合情勢、主要企業のプロファイルなど、包括的な情報を提供しています。

目次

第1章 イントロダクション

  • 主な調査成果
  • 調査の前提条件
  • 調査結果

第2章 調査手法

第3章 エグゼクティブサマリー

第4章 市場動向

  • 市場概要
  • 市場の促進要因
    • 低コストのストレージに対する需要の増加
    • スマートデバイスの普及率の上昇
    • 重要な分野で使用される高性能コンピュータの需要の増加
  • 市場の課題
    • フラッシュメモリの高い初期コスト
  • ファイブフォース分析
    • 買い手の交渉力
    • 供給企業の交渉力
    • 新規参入業者の脅威
    • 代替品の脅威
    • 競争企業間の敵対関係

第5章 NAND型フラッシュメモリ市場:セグメント別

  • タイプ別
    • SLC
    • MLC
    • TLC
  • 構造別
    • 2D
    • 3D
  • 用途別
    • スマートフォン
    • SSD
    • メモリカード
    • タブレット
    • その他
  • 地域別
    • 北米
    • 欧州
    • アジア太平洋地域
    • ラテンアメリカ
    • 中東・アフリカ

第6章 ベンダーの市場シェア

第7章 企業プロファイル

  • Samsung Electronics Co. Ltd
  • 東芝
  • Micron Technology Inc.
  • SK Hynix Inc.
  • Intel Corporation
  • ルネサスエレクトロニクス
  • SanDisk Corp.
  • Numonyx Inc.
  • Powerchip Technology Corporation
  • Spansion Inc.

第8章 投資分析

第9章 市場の将来展望

目次
Product Code: 63838

The NAND Flash Memory market is expected to register a CAGR of 9.1%, during the forecast period (2018 - 2023). The scope of the report includes different end-user industries, such as consumer electronics, automotive, industrial, and various others. Regions considered in the scope of the report include North America, Europe, etc.

Increase Demand for Low-cost Storage.

Applications of NAND flash memory are expected to increase, over the forecast period, due to the technical capability to fully use fabrication substrates. There has also been an emphasis on the evolution of new technology and products, as existing solutions cannot effectively scale to the capacity needed to meet the increasing demand for data. NAND flash memory not only offers larger storage space but also operates faster at a slightly reduced cost. Therefore, implementation of the NAND flash memory technology is being adopted by major companies to achieve the desired output at high performance and reliability, thus, driving the demand of the market.

Smartphones Sector to Augment the Growth

With smartphones becoming indispensable, the competition in the consumer electronics industry is increasing. Thus, companies have been rapidly adopting next-generation technologies to retain their position in the market, which in turn, will increase the demand for ample storage space. As NAND flash memory delivers a cost-effective solution for applications demanding solid-state storage and high density, major manufacturing companies, in the consumer electronics product segment, are adopting this memory device to fulfill the need for large storage space. This is anticipated to drive the market growth, over the forecast period.

Asia-Pacific to Register the Largest Share

Asia-Pacific is set to occupy the largest share in the NAND flash memory market, over the forecast period, due to the high technological adoption of memory devices in the consumer electronics and enterprise storage sectors in the region. Due to industrially developing economies, such as China, South Korea, and India, this region is driving the demand for NAND flash memory devices. Also, memory devices manufacturers, globally, are now adopting various strategies, such as joint ventures, to increase their businesses and market shares in the NAND flash memory market.

Key Developments in the Market:

  • June 2018: Micron and Intel entered into a partnership to produce the first 4bits/cell 3D NAND technology. These companies also announced the progress of development for the third-generation 96-tier 3D NAND structure, which provides a 50% increase in layers.
  • Major Players: SAMSUNG ELECTRONICS CO. LTD, TOSHIBA CORPORATION, MICRON TECHNOLOGY INC., INTEL CORPORATION, AND POWERCHIP TECHNOLOGY CORPORATION, among others.

Reasons to Purchase this Report:

  • Current and future of the NAND flash memory market
  • Analyzing various perspectives of the market with the help of Porter's five forces analysis
  • Identifying the type of service and end-user industry that is expected to dominate the market
  • Identifying the regions that are expected to witness the fastest growth, during the forecast period
  • Identify the latest developments, market shares, and strategies employed by major market players
  • 3-month analyst support, along with the Market Estimate sheet (in Excel)

Customization of the Report:

This report can be customized to meet your requirements. Please connect with our representative, who will ensure you get a report that suits your needs.

Table of Contents

1. Introduction

  • 1.1 Key Deliverables of the Study
  • 1.2 Study Assumptions
  • 1.3 Key Findings of the Study

2. Research Approach and Methodology

3. Executive Summary

4. NAND Flash Memory Market Dynamics

  • 4.1 NAND Flash Memory Market Overview
  • 4.2 Factors Driving the NAND Flash Memory Market
    • 4.2.1 Increasing Demand for Low-cost Storage
    • 4.2.2 Increasing Penetration of Smart Devices
    • 4.2.3 Increasing Demand for High-performance Computers used in various Critical Areas
  • 4.3 Challenges in the NAND Flash Memory Market
    • 4.3.1 High Initial Cost of Flash Memory
  • 4.4 Industry Attractiveness - Porter's Five Forces Analysis
    • 4.4.1 Bargaining Power of Suppliers
    • 4.4.2 Bargaining Power of Consumers
    • 4.4.3 Threat of New Entrants
    • 4.4.4 Threat of Substitute Products or Services
    • 4.4.5 Competitive Rivalry among Existing Competitors

5. NAND Flash Memory Market - Segmentation

  • 5.1 By Type
    • 5.1.1 SLC (One-bit Per Cell)
    • 5.1.2 MLC (Two-bit Per Cell)
    • 5.1.3 TLC (Three-bit Per Cell)
  • 5.2 By Structure
    • 5.2.1 2-D Structure
    • 5.2.2 3-D Structure
  • 5.3 By Application
    • 5.3.1 Smartphones
    • 5.3.2 SSD
    • 5.3.3 Memory Cards
    • 5.3.4 Tablets
    • 5.3.5 Others
  • 5.4 By Region
    • 5.4.1 North America NAND Flash Memory Market Share (2018-2023)
    • 5.4.2 Europe NAND Flash Memory Market Share (2018-2023)
    • 5.4.3 Asia-Pacific NAND Flash Memory Market Share (2018-2023)
    • 5.4.4 Latin America NAND Flash Memory Market Share (2018-2023)
    • 5.4.5 Middle East & Africa NAND Flash Memory Market Share (2018-2023)

6. Vendor Market Share

7. Competitive Intelligence - Company Profiles

  • 7.1 Samsung Electronics Co. Ltd
  • 7.2 Toshiba Corporation
  • 7.3 Micron Technology Inc.
  • 7.4 SK Hynix Inc.
  • 7.5 Intel Corporation
  • 7.6 Renesas Electronics Corporation
  • 7.7 SanDisk Corp.
  • 7.8 Numonyx Inc.
  • 7.9 Powerchip Technology Corporation
  • 7.10 Spansion Inc.

List Not Exhaustive

8. Investment Analysis

9. Future of the NAND Flash Memory Market

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