GaN (窒化ガリウム) パワーデバイスの世界市場 2023年：パワードライブ・サプライ & インバーター・高周波 (RF)
GaN Power Device Market by Device Type (Power, RF Power), Voltage Range, Application (Power Drives, Supply & Inverter, and RF), Vertical (Telecommunications, Consumer, Automotive, Military, Defense, Aerospace), and Geography - Global Forecast to 2023
|出版日||ページ情報||英文 172 Pages
|GaN (窒化ガリウム) パワーデバイスの世界市場 2023年：パワードライブ・サプライ & インバーター・高周波 (RF) GaN Power Device Market by Device Type (Power, RF Power), Voltage Range, Application (Power Drives, Supply & Inverter, and RF), Vertical (Telecommunications, Consumer, Automotive, Military, Defense, Aerospace), and Geography - Global Forecast to 2023|
|出版日: 2017年12月18日||ページ情報: 英文 172 Pages||
GaN (窒化ガリウム) パワーデバイスの市場規模は2017年から2023年にかけて29.1%のCAGR (年間複合成長率) で推移し、2017年の4億830万米ドルから2023年までに18億9,020万米ドルへ達すると予測されています。GaNパワーデバイス市場の成長を促進する主な要因は、革新を促進するGaNマテリアルのワイドバンドギャップ特性、RFパワーエレクトロニクスにおけるGaNの成功、および軍事・防衛・航空宇宙産業におけるGaN RFパワー半導体デバイスの導入拡大です。しかし、高電圧パワーデバイスにおいて炭化ケイ素 (SiC) が好まれる傾向は、全体的なGaNパワーデバイス市場を抑制する可能性があります。
当レポートでは、GaN (窒化ガリウム) パワーデバイス市場を調査し、市場概要、産業構造とバリューチェーン、市場への影響因子および市場機会の分析、デバイスタイプ・電圧範囲・用途・垂直産業・地域など各種区分別の主要動向および市場規模の推移と予測、競合環境、主要企業のプロファイルなどをまとめています。
"The global GaN power device market is expected to register a CAGR of 29.1% between 2017 and 2023"
The GaN power device market is expected to be worth USD 1890.2 million by 2023 from USD 408.3 million in 2017, at a CAGR of 29.1% between 2017 and 2023. The major factors driving the growth of the GaN power device industry include huge revenue generation from the consumer electronics and automotive verticals, wide bandgap property of GaN material encouraging innovation, success of GaN in RF-power electronics, and increasing adoption of GaN RF power device in military, defense, and aerospace verticals. However, the preference of silicon carbide in high-voltage power devices is expected to be a potential restraint in the overall GaN power device market. This factor is expected to limit the market growth over the next few years.
The global GaN power device market for RF power device held the largest share in 2016. In 2016, more than 90% of the total GaN power device market for RF power devices was dominated by the telecommunications; military, defense, and aerospace; and consumer and enterprise verticals. RF power devices are used in the military applications, very small aperture terminal (VSAT), phased-array radar applications, defense applications, RF cellular infrastructure, jammers, and satellite communications. Initially developed for improvised explosive device (IED) jammers in Iraq, GaN RF power has emerged as the technology of choice for all new microwave and millimeter-wave electronics including radar, satellite, communications, and electronic warfare.
The market for GaN-based power drives is expected to grow significantly during the forecast period. This is attributed to its characteristics such as high breakdown voltage and low conduction resistance characteristics that enable high-speed switching and miniaturization. The growing EV charging and electric vehicle production markets, as well as increasing renewable energy generation are the main reasons for the high growth rate of GaN-based power devices. Moreover, there is a huge demand for motor drives due to the high efficiency and performance characteristics offered by GaN devices in high voltage range (above 400 V) applications. GaN power devices are mainly used in UPS and motor control, wireless charging, high-efficiency power supply applications, servo motor drive, and hybrid and EV battery control and health management systems.
Asia Pacific (APAC) is expected to hold the largest share of the GaN power device market during the forecast period owing to the growing demand for power devices in the industrial, computing, telecommunications, automotive and military, and aerospace and defense verticals in emerging Asian countries such as China, Japan, Taiwan, the Philippines, and India. Moreover, the EV charging and electric vehicle production markets, as well as increasing renewable energy generation are driving the growth of the GaN power device market in APAC.
The report includes the competitive landscape of the market for prominent players including Cree (US), Qorvo (US), MACOM (US), Microsemi Corporation (US), Analog Devices US), Efficient Power Conversion (US), Integra Technologies (US), Transphorm (US), Navitas Semiconductor (US), Texas Instruments (US), Sumitomo Electric (Japan), Northrop Grumman Corporation (US), Qromis (US), Polyfet (US), TOSHIBA (Japan), Sumitomo Electric (Japan), Mitsubishi Electric (Japan), Panasonic (Japan), GaN Systems (Canada), VisIC Technologies (Israel), GaNPower (Canada), Infineon (Germany), Exagan (France), Ampleon (Netherlands), and EpiGaN (Belgium).
This research report categorizes the global GaN power device market on the basis of device type, voltage range, application, vertical, and geography. The report describes the major drivers, restraints, challenges, and opportunities pertaining to the market; value chain analysis; and market ranking analysis.
The report would help leaders/new entrants in this market in the following ways:
*Details on Business Overview, Products Offered, Strength of Product Portfolio, Business Strategy Excellence, Recent Developments, Key relationships might not be captured in case of unlisted companies.