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RF GaNの特許情勢(2020年)

RF GaN Patent Landscape 2020

出版日: | 発行: KnowMade | ページ情報: 英文 PDF >230 slides, Excel file > 3,000 patent families | 納期: 即日から翌営業日

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RF GaNの特許情勢(2020年)
出版日: 2020年11月06日
発行: KnowMade
ページ情報: 英文 PDF >230 slides, Excel file > 3,000 patent families
納期: 即日から翌営業日
  • 全表示
  • 概要
  • 目次
概要

RF GaNの知的財産(IP)活動は、次世代の通信および軍事技術の要件に牽引されて成長を続けています。YoleDveloppementによると、世界のGaN RF市場規模は、2019年に7億4,000万米ドルとなりました。同市場は、2025年年までの間に12%のCAGRで成長し、20億米ドルを超えると予測されています。

最初のRFGaN特許出願は1990年代に提出されました。2004年に活動が始まると、2015年から大幅に加速しています。今日、IPの拡大は、中国とバリューチェーンのさらに下への知財のシフトという2つの主要な要因によって推進されています。中国の知的財産活動は2015年から加速しています。過去2年間で、中国からの特許が著しく増加し、多くの中国の新規参入者がRF GaNIPの情勢に参入しています。

当レポートは、世界のRF GaNの特許情勢について調査しており、主なIP成長要因と主要な動向、主要IPポートフォリオの強み、およびその技術/用途の焦点、企業・国・技術別特許出願の時間発展、RF GaNの特許技術の状況に関する洞察、各技術と用途の動向の特定などの情報を提供しています。

当レポート掲載の企業

Air Water, AIST, Akash Systems, Akoustis, Ampleon, Analog Devices, Avago Technologies, BAE Systems, Boeing, Bosemi, Broadwave Electric, Carsem, CEA, CETC, China Mobile, CNRS, Comba Telecom, Cree, Dynax Semiconductor, Element Six/Group4 Labs, Ericsson, Eridan Communications, ETRI, Everbright Technology, Fraunhofer, Fudan University, Fujitsu, Gaxtrem, Gemini Semiconductor Manufacturing, Georgia Tech, GlobalWafers, Hangzhou Dianzi University, Hanhua Semiconductor, Hatchip, HC Semitek, HiWafer, HKUST, HRL Laboratories, Huawei, II-VI, Imec, IMECAS, Infineon, Institute of Semiconductors (CAS), Intel, IQE, Japan Radio, Jiejie Microelectronics, KETI, KNU, Korean Agency for Defense Development, KPU, LG, Lockheed Martin, MACOM, Mems Solution, MIT, Mitsubishi Electric, Murata Manufacturing, Nagoya University, Nanjing Changfeng Aerospace Electronic Equipment, Nanjing University of Science & Technology, Nanyang Technological University, National Technology & Engineering Solutions of Sandia, NEC, Nexgo (Shenzhen Xinguodu Technology), NGK Insulators, Nichia, NIMS, Nokia, Northrop Grumman, Northwestern Polytechnical University, NPP Pulsar, NTT, NXP, OKI Electric Industry, ON Semiconductor, Panasonic, Peking University, Qorvo, Qualcomm, Raytheon, Renesas Electronics, RFHIC, Samsung Electro Mechanics, Samsung Electronics, Sanan IC, Sanken Electric, SCIOCS/Sumitomo Chemical, SCUT, SETi, Shaanxi Reactor Microelectronics, Shandong University, Sharp, Shin-Etsu, Sichuan University, SINANO, SITP, Soitec/Epigan, South China Normal University, Southeast University Nanjing, STMicroelectronics, Sumitomo Electric, Sun Yat Sen University, SUSTECH, Suzhou Jena Microelectronics, Tagore Technology, Taiyo Yuden, Teledyne Scientific & Imaging, Thales, Tianjin University, Tiger Microwave, Tomsk State University, Toshiba, Tower Semiconductor, Transphorm, Tsinghua University, TSMC, TUS - Semiconductor, UESTC, University of California, University of Colorado, University of Florida, U-Tel, Wavepia, Wavice, Win Semiconductors, Xidian University, Zhonghe Boxin Semiconductor, Zhuhai Crystal Resonance Technologies, ZTE, and more.

目次

イントロダクション

  • 環境
  • 調査範囲
  • レポートの主な機能
  • レポートで引用されている企業
  • 特許の情勢を調査する理由

調査手法および用語

エグゼクティブサマリー

特許情勢の概要

  • 特許出願/刊行物の時間発展
  • 企業の本社の時間発展
  • 主要な特許出願人
  • 3つ以上の特許ファミリーを持つ他のパテント譲受人
  • 主な譲受人からの特許刊行物の時間発展
  • 2019年1月以降の主に活動的な特許出願人
  • 2019年1月以降に公開された新しい特許のトピック
  • 2019年~2020年の新規参入企業
  • 新規特許のトピック
  • 2015年以降の主なIP転送とIP提携
  • 主なIPプレーヤーとその特許の現在の法的地位
  • 付与された特許と係属中の特許の地理的範囲
  • 主な譲受人のIPポートフォリオの地理的範囲
  • 特許譲受人のIPリーダーシップ
  • 国別の主要IP企業本社
  • 特許譲受人の特許ポートフォリオ強度指数
  • 技術セグメント別の特許ファミリの概要
  • 主要な技術セグメントのIPダイナミクス
  • 主な譲受人のIPポートフォリオのテクノロジーカバレッジ
  • バリューチェーンセグメント別の主な特許出願人

アメリカのIPプレーヤー

欧州のIPプレーヤー

日本のIPプレーヤー

中国のIPプレーヤー

香港と台湾のIPプレーヤー

韓国のIPプレーヤー

国/地域ごと:

  • 主要な特許譲受人
  • 主な譲受人からの特許刊行物の時間発展
  • 主な譲受人のIPポートフォリオの地理的範囲
  • 主な譲受人のIPポートフォリオのテクノロジーカバレッジ

セグメンテーション

  • セグメント別の特許ファミリーの概要
  • 主なセグメントの特許刊行物の時間発展
  • 主な譲受人のIPポートフォリオの技術カバレッジ
  • バリューチェーンセグメント別の主な特許出願人
  • RF機能と周波数帯域別の主な特許出願人
  • マトリックステクノロジーとRFデバイス/機能/周波数帯域
  • マトリックスの主な問題と主なセグメント

テクノロジー

  • GaN-on-Sic
  • GaN-on-Silicon
  • GaN-on-Sapphire
  • GaN-on-Diamond
  • GaN-on-GaN
  • 各テクノロジーについて:主な特許出願人、主なトピック、および注目すべき最近の特許

RFデバイス

  • 電界効果トランジスタ(FET、HEMT、HFET、ノーマリーオフなど)
  • ヘテロ接合バイポーラトランジスタ(HBT)
  • RFダイオード(ショットキー、バラクター、RTD、IMPATTなど)
  • RF音波デバイス(SAW、TC-SAW、FBAR、BAW-SMR)
  • 各RFデバイスについて:主な特許出願人、主なトピック、および注目すべき最近の特許

MMIC

  • 主要な特許出願人
  • Cree、Toshiba、Raytheon、Win Semiconductors、Qorvo、Northrop Grumman、BAE Systems、TigerMircrowaveが所有する注目すべき特許

回路と操作方法

  • 主な特許出願人と、バイアス、保護、マッチング、線形性に関連する特許出版物の時間発展
  • 注目すべき最近の特許

機能

  • RF増幅器(PA、LNA、Doherty PA、スイッチモードPA)
  • RFスイッチ
  • RFフィルター
  • 各機能について:主な特許出願人、特許出版物の時間発展、および注目すべき最近の特許

周波数帯

  • 電波、マイクロ波、ミリ波、テラヘルツに関する主要な特許出願人と時間発展特許の出版物
  • 5Gネットワークをターゲットとする特許出願人
  • 5Gネットワークを対象とした注目すべき特許

結論

知識のプレゼンテーション

目次
Product Code: KM20008

RF GaN intellectual property (IP) activities continue to grow, driven by next-gen telecom and military technologies requirements

The radio frequency (RF) GaN market is experiencing impressive growth, mainly driven by telecom and military applications. The overall GaN RF market is expected to increase from $740M in 2019 to more than $2B in 2025, with a CAGR of 12%, according to Yole Développement.

In this report, Knowmade's Semiconductor team gives a thorough description and analysis of the patent landscape related to GaN-based RF electronics, covering the whole value chain from epitaxial structures to RF semiconductor devices, circuits, packages, modules and systems. Analysts have selected and analyzed more than 6,300 patents published worldwide up to August 2020, representing more than 3,000 patent families (inventions) filed by more than 500 different organizations. This 2020 edition comprises 2x more patent families and more than 100 new players compared to the 2019 edition.

The first RF GaN patent applications were filed in the 1990s. The level of activity took off in 2004 and accelerated significantly from 2015. Today, the IP dynamics are driven by two major factors: (1) China, and (2) the shift of IP further down the value chain. Chinese IP activity has been accelerating since 2015. Over the last 2 years, we witnessed a remarkable increase in patents coming from China and many Chinese newcomers entering the RF GaN IP landscape. In 2019-2020, the Chinese organizations represented more than 40% of the patent applicants (Americans = 23%, Japanese = 10%, Europeans = 3%). The rise in RF GaN patents from China-based companies follows a more general trend as the country transitions from a manufacturing to an innovation-driven economy. This trend also reflects the situation in the RF industry, with a Chinese market that shows exploding demand for commercial wireless telecom applications and Chinese companies already developing next-gen telecom networks. Moreover, following the US-China trade war, numerous China-based companies are trying to develop GaN RF for 5G infrastructures internally.

Over the last few years, the level of creativity to address all the technology and manufacturing roadblocks for GaN RF devices has been impressive. More recently, IP developments are accelerating on topics further down the value chain: RF circuits, packaging, and modules/systems. The current patent activity suggests that manufacturing and technology issues still need to be solved in monolithic integration of different RF semiconductor devices; thermal management at epi-stack, semiconductor device and package levels; linearity at semiconductor device and circuit levels; and protection, matching and distortion compensation at circuit level.

GaN RF leading companies should not underestimate China's IP as it is changing the landscape

The RF GaN patent landscape is currently dominated by American and Japanese companies such as Cree, Fujitsu, Sumitomo Electric, Mitsubishi Electric, Intel, MACOM, Toshiba, Qorvo and Raytheon. The IP competition has been stronger in the US, as demonstrated by a much higher number of granted patents (1,200+) in contrast with China (640+), Japan (440+) and Europe (250+). However, the patenting activity is now focused on China.

Cree has the stronger IP position thanks to numerous fundamental patents, especially for GaN-on-SiC technology. Over the past 5 years, inventive activity at Cree, Sumitomo Electric and Toshiba stalled. These IP leaders have developed broad patent portfolios covering a wide range of RF GaN technology nodes. The reduced IP activity could be a sign of confidence in their already robust RF GaN patent portfolio. Intel and MACOM have strongly increased their IP activity since 2017, especially for GaN-on-Silicon technology. Intel is currently the most active patent applicant in the RF GaN field, with a record-high level of activity of patenting new inventions over the last couple of years which could, down the road, position it ahead of Sumitomo Electric, Fujitsu or Cree in terms of IP leadership.

In China, CETC and Xidian University have the most prolific inventive activity. Other players such as HiWafer, Dynax, Hanhua and China's top public research entities UEST, IMECAS, SCUT and Institute of Semiconductors have built sizeable RF GaN IP portfolios, and ambitious new players are entering the IP landscape (Boxin, Reactor Microelectronics, TUS-Semiconductor, Hatchip, Nexgo, Bosemi, HC Semitek, A-INFO, RDW, Chippacking, China Mobile, Gaxtrem, etc.). European RF players Thales, BAE Systems, Infineon, Ampleon, Ericsson, etc. are only playing a small part in the current RF GaN IP dynamics. In Taiwan, the foundries Win Semiconductors, TSMC and GlobalWafers entered the RF GaN IP landscape first in the mid-2010s, followed by others such as VIS and Wavetek in 2018. South Korean entities are not very active. ETRI continued to file few new inventions every year over the past decade. In 2016, RFHIC acquired GaN-on-Diamond-related patents from Element Six, then we observed the entry of Wavice, UTel and Wavepia more recently.

Strategic and technological paths followed by leading companies and newcomers for RF GaN technologies

This report provides the main IP dynamics of the RF GaN field and offers a complementary vision of the RF GaN competitive landscape through patenting activity. In this report, we give deep insights on the IP portfolios and strategies of key RF GaN players and newcomers. We analyze their patented technologies, IP strength, markets of interest and future intents, and we highlight the strategic and technological paths they are following for RF GaN technologies.

In this 2020 edition, we detail the IP landscape and recent patents of note related to GaN-on-SiC, GaN-on-Silicon, GaN-on-Diamond and GaN-on-Sapphire. We analyze and describe the IP activity related to RF transistors (HEMT, HBT, E-mode, etc.), RF diodes (varactor, RTD, IMPATT, etc.) and RF acoustic wave devices (SAW, TC-SAW, FBAR, BAW-SMR). Furthermore, the report includes a section dedicated to GaN-based MMIC-related patents. Overall, we highlight patents dealing with manufacturing and technology issues still of interest to IP players (heat dissipation, monolithic integration, linearity, impedance matching, etc.), and/or targeting MW/mmWave frequency ranges or 5G applications.

Useful Excel database

This report also includes an extensive Excel database with the 3,000+ patent families analyzed in this study. This useful patent database allows for multi-criteria searches and includes patent publication numbers, hyperlinks to the original documents, priority date, title, abstract, assignees, current legal status and technological and application segments (epitaxial structures, RF transistors, RF diodes, RF acoustic wave devices, MMIC, GaN-on-SiC, GaN-on-Si, GaN-on-Diamond, PA, RF switch, RF filter, Microwaves, mm-waves, 5G, etc.).

Companies mentioned in this report

Air Water, AIST, Akash Systems, Akoustis, Ampleon, Analog Devices, Avago Technologies, BAE Systems, Boeing, Bosemi, Broadwave Electric, Carsem, CEA, CETC, China Mobile, CNRS, Comba Telecom, Cree, Dynax Semiconductor, Element Six/Group4 Labs, Ericsson, Eridan Communications, ETRI, Everbright Technology, Fraunhofer, Fudan University, Fujitsu, Gaxtrem, Gemini Semiconductor Manufacturing, Georgia Tech, GlobalWafers, Hangzhou Dianzi University, Hanhua Semiconductor, Hatchip, HC Semitek, HiWafer, HKUST, HRL Laboratories, Huawei, II-VI, Imec, IMECAS, Infineon, Institute of Semiconductors (CAS), Intel, IQE, Japan Radio, Jiejie Microelectronics, KETI, KNU, Korean Agency for Defense Development, KPU, LG, Lockheed Martin, MACOM, Mems Solution, MIT, Mitsubishi Electric, Murata Manufacturing, Nagoya University, Nanjing Changfeng Aerospace Electronic Equipment, Nanjing University of Science & Technology, Nanyang Technological University, National Technology & Engineering Solutions of Sandia, NEC, Nexgo (Shenzhen Xinguodu Technology), NGK Insulators, Nichia, NIMS, Nokia, Northrop Grumman, Northwestern Polytechnical University, NPP Pulsar, NTT, NXP, OKI Electric Industry, ON Semiconductor, Panasonic, Peking University, Qorvo, Qualcomm, Raytheon, Renesas Electronics, RFHIC, Samsung Electro Mechanics, Samsung Electronics, Sanan IC, Sanken Electric, SCIOCS/Sumitomo Chemical, SCUT, SETi, Shaanxi Reactor Microelectronics, Shandong University, Sharp, Shin-Etsu, Sichuan University, SINANO, SITP, Soitec/Epigan, South China Normal University, Southeast University Nanjing, STMicroelectronics, Sumitomo Electric, Sun Yat Sen University, SUSTECH, Suzhou Jena Microelectronics, Tagore Technology, Taiyo Yuden, Teledyne Scientific & Imaging, Thales, Tianjin University, Tiger Microwave, Tomsk State University, Toshiba, Tower Semiconductor, Transphorm, Tsinghua University, TSMC, TUS - Semiconductor, UESTC, University of California, University of Colorado, University of Florida, U-Tel, Wavepia, Wavice, Win Semiconductors, Xidian University, Zhonghe Boxin Semiconductor, Zhuhai Crystal Resonance Technologies, ZTE, and more.

Report's Key Features

  • PDF with > 230 slides
  • Excel file > 3,000 patent families
  • Main IP dynamics and key trends.
  • IP leaders, most active players and newcomers.
  • IP portfolio strength of key players, and their technology/application focus.
  • Time evolution of patents filings by company, countries, and technology.
  • IP collaborations and IP transfers between key organizations.
  • Insights into the status of RF GaN patented technologies, identifying trends for each technology and application.
  • Extensive Excel database of over 3,000 patent families with all patent information and technology segmentation.

Table of Contents

INTRODUCTION

  • Context
  • Scope of the report
  • Key features of the report
  • Companies cited in the report
  • Whystudy the patent landscape

METHDOLOGY & TERMINOLOGY

EXECUTIVE SUMMARY

PATENT LANDSCAPE OVERVIEW

  • Time evolution of patent applications / publications
  • Time evolution of company headquarters
  • Leading patent applicants
  • Other patent assignees with 3 or more patent families
  • Time evolution of patent publications from main assignees
  • Most active patent applicants since Jan 2019
  • Topics of new patents published since Jan 2019
  • Newcomers in 2019-2020
  • Topics of newcomers' patents
  • Main IP transfers and IP collaborations since 2015
  • Main IP players and the current legal status of their patents
  • Geographical coverage of granted and pending patents
  • Geographical coverage of main assignees' IP portfolios
  • IP leadership of patent assignees
  • Key IP players by country of headquarters
  • Patent portfolio strength index of patent assignees
  • Overview of patent familes by technological segment
  • IP dynamics for main technological segments
  • Technology coverage of main assignees' IP portfolios
  • Main patent applicant by value chain segment

American IP players

European IP players

Japanese IP players

Chinese IP players

Hong kongese and Taiwanese IP players

South Korean IP players

For each country / area:

  • Leading patent assignees
  • Time evolution of patent publications from main assignees
  • Geographic coverage of main assignees' IP portfolios
  • Technology coverage of main assignees' IP portfolios

SEGMENTATION

  • Overview of patent families by segment
  • Time evolution of patent publications for main segments
  • Technology coverage of main assignees' IP portfoliios
  • Main patent applicants by value chain segment
  • Main patent applicants by RF function and frequency band
  • Matrix Technology vs RF device/Function/Frequency band
  • Matrix Main issues vs Main segments

Technology GaN-on-X

  • GaN-on-Sic
  • GaN-on-Silicon
  • GaN-on-Sapphire
  • GaN-on-Diamond
  • GaN-on-GaN
  • For each technology: leading patent applicants, main topics, and noteworthy recent patents

RF devices

  • Field effect transistors (FET, HEMT, HFET, Normally-off, etc.)
  • Heterojunction bipolar transistors (HBT)
  • RF diodes (Schottky, varactor, RTD, IMPATT, etc.)
  • RF acoustic wave devices (SAW, TC-SAW, FBAR, BAW-SMR)
  • For each RF device: leading patent applicants, main topics, and noteworthy recent patents.

MMIC

  • Leading patent applicants
  • Noteworthly patents owned by Cree, Toshiba, Raytheon, Win Semiconductors, Qorvo, Northrop Grumman, BAE Systems, Tiger Mircrowave.

Circuit & Operating methods

  • Leading patent applicants and time evolution of patent publications related to bias, protection, matching, and linearity.
  • Noteworthy recent patents

Function

  • RF amplifer (PA, LNA, Doherty PA, switch-mode PA)
  • RF switch
  • RF filter
  • For each function: leading patent applicants, time evolution of patent publications, and noteworthy recent patents.

Frequency bands

  • Leading patent applicants and time evolution patent publications for Radio waves, Microwaves, mm-Waves and THz
  • Patent applicants targeting 5G networks
  • Noteworthy patents targeting 5G networks

CONCLUSIONS

KNOWMADE PRESENTATION

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