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GaNパワーエレクトロニクスの特許情勢

Power GaN Patent Landscape

発行 Knowmade 商品コード 917171
出版日 ページ情報 英文 PDF >270 Slides, Excel file with >9,500 Patents
納期: 即日から翌営業日
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GaNパワーエレクトロニクスの特許情勢 Power GaN Patent Landscape
出版日: 2019年11月25日 ページ情報: 英文 PDF >270 Slides, Excel file with >9,500 Patents
概要

当レポートでは、GaN (窒化ガリウム) ベース技術に関連した特許情勢およびパワーエレクトロニクスアプリケーション向けデバイスについて調査し、IP動向、主要な特許譲受人のランキング、主要企業のIPポジションと特許ポートフォリオの強み、特許区分、主な特許とその詳細、および主要企業のプロファイルなどを分析しています。

イントロダクション

調査手法

エグゼクティブサマリー

特許情勢の概要

  • 特許公開の時間発展
  • 主要特許の譲受人
  • IP企業:本部の国別
  • IP企業:バリューチェーンにおけるポジション別
  • IP活動が減少またはIP活動を既に行っていないIP企業
  • IP活動が増加しているIP企業
  • 特許情勢における新規参入企業
  • 特許を付与された・出願中の諸国
  • IPリーダーシップおよび主要企業のブロッキングの可能性
  • 企業のIPポジションの進化
  • 特許ポートフォリオの強み

特許区分

パワーエレクトロニクス向けGaN-on-Si (シリコン基板窒化ガリウム)

  • IPのダイナミクスおよび主な特許譲受人
  • 特許譲受人のIPリーダーシップ
  • 主なIP企業、新規参入企業とその特許

パワーエレクトロニクス向けGaN on Sapphire (サファイア基板窒化ガリウム)

  • 主な特許譲受人
  • 主な特許

常時オフ型

  • カスコードトポロジーの主な特許譲受人
  • Eモードトランジスタの主な特許譲受人、ほか

統合

バーティカルパワーデバイス

パッケージング

電流コラプス

GaNパワーエレクトロニクスの主な促進要因

  • GaNパワーエレクトロニクス特許はEV/HEV、急速、およびワイヤレス充電をターゲットに

主要企業のIPプロファイル

結論

目次

Report's Key Features:

  • PDF with > 270 slides
  • Excel file > 9,500 patents
  • IP trends, including time-evolution of published patents, countries of patent filings, etc.
  • Ranking of main patent assignees
  • Key players' IP position and relative strength of their patent portfolios
  • Patent segmentation:
    • Vertical power device (vertical transistor, vertical diode),
    • Normally-off (E-mode transistor, cascode topology),
    • Integration (monolithic E/D-mode, SiP/SoC, power IC),
    • GaN-on-Si,
    • GaN-on-Sapphire,
    • Selective area p-type doping (ion implantation, p-GaN regrowth),
    • Current collapse,
    • Thermal management,
    • Stray inductance,
    • EV/HEV,
    • fast charging,
    • wireless charging.
  • Key patent identification and details
  • IP profile of 40 key players: Infineon, Panasonic, Toshiba etc.
  • Excel database containing all patents analyzed in the report, including technology and application segmentations

Power GaN intellectual property (IP): high-voltage power semiconductor leaders, a core set of strong IP players and numerous newcomers

Things are starting to change for GaN power electronics ! Power GaN is entering mainstream consumer applications with the adoption of GaN HEMT by Chinese OEM Oppo in its 65W fast chargers. In addition, GaN is getting attention from various OEMs and Tier1s in the automotive industry. GaN is also expected to penetrate industrial and telecom power supply applications (datacom, base-stations, UPS, etc.). Yole Développement projects that the GaN power market will be worth over $350M by 2024, with a compound annual growth rate (CAGR) of 85%.

The power electronics industry is familiar with the companies that are actively promoting GaN technology, such as EPC, GaN Systems, Transphorm, Navitas, Exagan, Infineon or ON Semiconductor. Today, more companies are either joining the market, have announced ambitions to do this, or have betrayed their intentions through their patent publications. Many firms have GaN power patenting activity, and a core set of strong companies, with strong technology and IP, are ready to dominate the GaN power market in coming years.

In this report, Knowmade has thoroughly investigated the patent landscape related to GaN-based technologies and devices for power electronics applications. We have selected and analyzed more than 9,500 patents and patent applications published worldwide up to May 2019 and grouped into more than 4,100 patent families. These patents pertain to epiwafers (GaN-on-Si, GaN-on-Sapphire, etc.), semiconductor power devices (D-mode, E-mode, vertical device, p-doping, etc.), integration (SiP, SoC, monolithic integration, etc.), circuit and operating methods (cascode, half-bridge, power IC, etc.), and packaging (thermal management, stray inductance, etc.), for all functions (switch, converter, rectifier, inverter, etc.) and applications (power supply, PV, EV/HEV, UPS, fast charging, wireless charging, etc.).

Since our previous Power GaN report, published in 2015, IP benchmarks herald changes in the GaN power industry and the ramp-up of GaN power market. All power electronics market players are present in the Power GaN patent landscape: Infineon, Fuji Electric, Toshiba, Sanken Electric, ON Semiconductor, STMicroelectronics, Renesas Electronics, Texas Instruments, Dialog Semiconductor, Power Integrations and Nexperia. Most of them are intensifying their Power GaN patenting activity and are enlarging their IP geographic coverage from the US and Japan to new key regions for the GaN power market, namely Europe and China.

In just a few years, Infineon and Transphorm have reached the strongest IP position in the patent landscape. This offers them the capability to limit the freedom-to-operate of competitors who develop GaN technology for power electronics. Infineon definitely has the strongest IP portfolio to front the growing of GaN power market. Transphorm is a major force in the power GaN IP arena, well ahead of the other GaN pure-players, EPC, GaN Systems, Navitas, Exagan or VisIC. According to our analysis, Transphorm today has the dream patent portfolio for all those who want to benefit from strategic advantages in GaN power electronics market. Some weak signals lead us to believe the first 650 V GaN-on-Si FETs from Nexperia announced in November 2019 may use Transphorm's patents.

No matter how GaN providers manufacture power devices, they must consider GaN power patents held by Infineon, Transphorm, Furukawa Electric, Panasonic, Toshiba and Fujitsu. They must also watch other players that are strengthening their IP position such as EPC, Renesas, ON Semi, Toyota, TI, TSMC, Intel, Toyoda Gosei and Sanken. More newcomers of different types are entering the Power GaN patent landscape. Startups include Exagan, Navitas, Cambridge Electronics, GaNPower and Innoscience. New substrate providers include Qromis, AirWater and Zing Semiconductor. Foundries include FMIC, HiWafer, Simgui, Nuvoton, Sinopower and VIS. Integrators include Nissan, Shindengen Electric Manufacturing, Nidec, Kyocera, Hella, Renault, Apple, Midea, Huawei and Velodyne Lidar. China has made an impressive move into Power GaN IP with numerous entrants since 2017.

GaN-on-Silicon and GaN-on-Sapphire

In the report we detail the IP landscape related to GaN-on-Silicon and GaN-on-Sapphire. The GaN-on-Silicon patent landscape is characterized by the presence of numerous GaN pure-play companies and numerous Chinese new entrants. In the GaN-on-Sapphire patent landscape, Power Integrations is the best-known player. However, numerous other players have also developed IP related to GaN-on-Sapphire for power applications, including CorEnergy, Powdec and Seoul Semiconductor.

Normally-off

Infineon leads the IP landscape related to cascode topology thanks to key patents from International Rectifier acquired in 2014. Fujitsu and Transphorm have strong patent portfolios related to E-mode GaN transistors. Infineon, EPC and Renesas are currently the most active IP players. In the report we have identified key patents from key IP players and new entrants for both cascode and E-mode transistors. Furthermore, we map the different solutions claimed in patents to make E-mode transistors.

Integration

We have been witnessed of a growing IP activity for power GaN System-on-Chip with Infineon/IR, Intel and Navitas as the main patent applicants. Infineon and Intel have been developing IP for monolithically integrating GaN power devices with other kind of devices such as RF circuits and LEDs, and/or Si CMOS technology. On the other hand Navitas's patents focus on all GaN Power IC. Other players hold patents on monolithic integration such as Intel, Dialog, Power Integrations, Transphorm, Exagan, ON Semiconductor, GaN Systems, TI, EPC, TSMC. Some other companies recently filed patents related to GaN-on-Silicon-on-Insulator for power electronics.

Vertical power device

Vertical power devices still attract significant attention of patent applicants. Nexgen (formerly Avogy) is the main patent owner, but it has stopped its patenting activity, like Fujitsu and Furukawa. Today, Toyoda Gosei, Fuji Electric, Sumitomo Electric and Toyota are leading the vertical power device IP landscape. Several players are developing IP on vertical devices on silicon substrates including CEA/Renault, Vishay, Renesas, Bosch, Fuji Electric, Furukawa Electric and M-MOS Semiconductor. This report highlights selective ion implantation and selective p-GaN regrowth to form selective p-type regions.

Current collapse and driving applications

We see important IP activity to suppress current collapse, with Fujitsu, Panasonic and Toshiba as main patent assignees. We identify IP players claiming solutions to prevent this dynamic on-resistance increase (field plates, surface passivation, hole injections). In the report we also highlight Power GaN patents explicitly targeting EV/HEVs from CEA/Renault, Toyoda Gosei, Denso, Toyota, CACTi, KOYJ, Shinny, Sentec, China Motor and Egtronics, fast charging from Powdec and Shinny and wireless charging from EPC, Panasonic, Navitas, Rohm, and Hosiden.

Companies mentioned in the report (non-exhaustive)

Infineon, International Rectifier, Toshiba, Panasonic, Fujitsu, Furukawa Electric, Transphorm, Sumitomo Electric, Sharp, Toyota Motor, Toyota Central R&D Labs, Fuji Electric, Xidian University, Toyoda Gosei, Renesas Electronics, UESTC, Nexgen, Avogy, Sanken Electric, University Beijing, Founder Microelectronics IC, Rohm, Intel, Seoul Semiconductor, Samsung Electronics, Sun Yat Sen University, Texas Instruments, On Semiconductor, TSMC, Mitsubishi Electric, HRL Laboratories, Power Integrations, CorEnergy, Denso, NXP, Freescale, Nexperia, SINANO, CEA, Gpower, EPC, IMECAS, Imec, Qorvo, Delta Electronics, Institute of Semiconductors, NTT, LG Electronics, Samsung Electro Mechanics, Cree, Wolfspeed, Hitachi, CETC, LG Innotek, Navitas Semiconductor, Sciocs, Sumitomo Chemical, NEC, ETRI, Macom, Nitronex, Innoscience, Nexperia, Enkris Semiconductor, Gan Systems, Japan Radio, Midea, MIT, STMicroelectronics, Epistar, Exagan, Richtek Technology, HKUST, Soitec, Epigan, NGK Insulators, Peking University, Bosch, IBM, Murata Manufacturing, Siemens, Alpha & Omega Semiconductor, Coorstek, General Electric, Hiwafer, SUSTech, Foshan Tk Semiconductor, University of California, VisIC Technologies, CNRS, Dowa Electronics Materials, Powdec, SNU, ITRI, Ku Leuven, Qromis, Sanan IC, SETi, Vishay, A*STAR, Cambridge Electronics, Dialog Semiconductor, Dynax Semiconductor, Ganpower, Globalfoundries, Huawei, Simgui, University of Florida, Air Water, IQE, M-MOS Semiconductor, University of Sheffield, Zing Semiconductor, Allos Semiconductors, Arizona State University, Fraunhofer, Hella, KETI, Korea Advanced Nano Fab Center, Kyocera, Nuvoton, Shin-Etsu, Sigetronics, Sony, University of Illinois, University of South Carolina, US Navy, Alstom Transport, ASTRI, Caltech, Nissan Motor, North Carolina State University, Renault, Sixpoint Materials, Velodyne Lidar, etc.

TABLE OF CONTENTS

INTRODUCTION

  • Introduction
  • Scope of the report
  • Key feature of the report
  • Main patent assignees cited in the report

METHODOLOGY

  • Patent search, selection and analysis
  • Patent segmentation
  • Terminology for patent analysis
  • Definitions for key patents and key IP players

EXECUTIVE SUMMARY

PATENT LANDSCAPE OVERVIEW

  • Time evolution of patent publications
  • Main patent assignees
  • IP players by country of head office
  • IP players by position in the value chain
  • IP players with decreasing or no longer IP activity
  • IP players with increasing IP activity
  • New entrants in the patent landscape
  • Countries of filings for granted and pending patents
  • IP leadership and blocking potential of main players
  • Evolution of players' IP position since 2015
  • Strength of patent portfolios

PATENT SEGMENTATION

  • For each segment Key
  • IP players, new entrants, key patents, IP dynamics Segments Vertical power device (vertical transistor, vertical diode), Normally off (E mode transistor, cascode topology), Integration (monolithic E/D mode, SiP / power IC), GaN on Si, GaN on Sapphire, Selective area p type doping (ion implantation, p GaN regrowth), Current collapse, Thermal management, Stray inductance, EV/HEV, fast charging, wireless charging

GAN ON SILICON FOR POWER ELECTRONICS

IP dynamics and main patent assignees

  • IP leadership of patent assignees
  • Key IP players, new entrants, and their key patents
  • Focus on Infineon, Fujitsu, Transphorm Furukawa Electric, Fuji Electric, Toshiba, Panasonic, EPC, GaN Systems, Navitas, VisIC Exagan TSMC, Intel, STMicroelectronics, CEA, imec MIT, FMIC

GAN ON SAPPHIRE FOR POWER ELECTRONICS

  • Main patent assignees
  • Main patents from Power Integrations, CorEnergy Furukawa Electric, Seoul Semiconductor, Panasonic, HRL, Powdec Alpha Omega, Fujitsu, Toyoda Gosei etc

NORMALLY OFF

  • Leading patent assignees for cascode topology
  • Leading patent assignees for E mode transistor
  • Main patent assignees by type of E mode GaN HEMT recessed gate p GaN under gate ion implantation under gate MIS HEMT) Key IP players new entrants, and their key patents

INTEGRATION

  • Main patent assignees for SiP SoC monolithic integration and monolithic power IC
  • Key IP players new entrantsn and their key patents
  • Noticeable recent patents related to monolithically integrated E/D mode transistors
  • Monolithic power IC focus on patents held by Navitas, Dialog, Infineon, GaN Systems, EPC, TI, etc
  • SoC with group IV and group III nitride devices on SOI substrates

VERTICAL POWER DEVICE

  • Leading patent assignees for vertical GaN power transistor and vertical GaN power diode
  • Key IP players new entrants, and their key patents
  • Vertical GaN power device on silicon substrate
  • Selective area doping issues for vertical structure main patent assignees for selective ion implantation and selective p GaN regrowth

PACKAGING

  • Leading patent assignees for GaN power package
  • Thermal management noticeable recent patents
  • Stray inductance noticeable recent patents

CURRENT COLLAPSE

  • Leading patent assignees for current collapse
  • Main patent assignees by solution to prevent current collapse (field plate, surface passivation, holes injection)

MAIN DRIVERS FOR POWER GAN

  • Power GaN patents explicitly targeting EV/HEV, fast charging and wireless charging

IP PROFILE OF KEY PLAYERS

  • For each player patent portfolio overview, key patents, and recent patenting activity 40 players profiled Infineon, Panasonic, Toshiba, Fujitsu, Transphorm Furukawa Electric, Cree/ Wolfspeed Sanken Electric, Renesas Electronics, Texas Instruments, Toyota, ON Semiconductor, Power Integrations, Sumitomo Electric, Sharp, Fuji Electric, Rohm, Toyoda Gosei Intel, TSMC, Seoul Semiconductor, Nexperia EPC, GaN Systems, Nexgen VisIC Navitas Semiconductor, Exagan Dialog Semiconductor, CEA, STMicroelectronics, HRL, imec Innoscience GaNPower Gpower CorEnergy FMIC, Xidian University, UESTC

CONCLUSION

KNOWMADE PRESENTATION

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