フラッシュメモリの世界市場 - 2017〜2021年
Global Flash Memory Market 2017-2021
|発行||TechNavio (Infiniti Research Ltd.)||商品コード||538535|
|出版日||ページ情報||英文 86 Pages
フラッシュメモリの世界市場は2017年から2021年までの期間において11.37%のCAGR (年平均成長率) にて成長が続くものと予測されます。
Flash memory is a non-volatile memory. Dr. Fujio Masuoka invented the flash memory when he worked for Toshiba in the 1980s. Flash memory penetrated the semiconductor market by early 1990s. Flash memory evolved from erasable programmable read-only memory (EPROM) and electrically erasable programmable read-only memory (EEPROM). If considered technically, flash memory is a variant of EEPROM. However, the industry reserves the term EEPROM for byte-level erasable memory and applies the term flash memory to larger block-level erasable memory. Flash memory is a type of non-volatile memory that erases data in units called blocks. A block stored on a flash memory chip must be erased before any form of data is written or programmed to the microchip. Flash memory retains the stored data for an extended period of time even when the flash-equipped device is powered on or off.
Technavio's analysts forecast the global flash memory market to grow at a CAGR of 11.37% during the period 2017-2021.
The report covers the present scenario and the growth prospects of the global flash memory market for 2017-2021. To calculate the market size, the report considers the non-volatile flash memory technologies and excludes volatile memory technologies.
The market is divided into the following segments based on geography:
Technavio's report, Global Flash Memory Market 2017-2021, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the key vendors operating in this market.
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