株式会社グローバルインフォメーション
TEL: 044-952-0102
市場調査レポート

IC製造用機器と材料の世界市場

The Global Market for Equipment and Materials for IC Manufacturing

発行 Information Network 商品コード 6131
出版日 ページ情報 英文
納期: お問合せ
価格
本日の銀行送金レート: 1USD=115.27円で換算しております。
Back to Top
IC製造用機器と材料の世界市場 The Global Market for Equipment and Materials for IC Manufacturing
出版日: 2016年11月01日 ページ情報: 英文
概要

当レポートでは、IC製造に関連する各種機器および材料市場の動向、課題や今後の展望などについて、概略下記の構成でまとめております。

第1章 イントロダクション

第2章 低誘電体層間絶縁体の課題と動向

  • イントロダクション
  • 理想的な誘電体
  • 低誘電体層間絶縁体の種類
    • FSG
    • HSQ
    • ナノポーラスシリカ
    • スピンオン・ポリマー
    • BCB
    • Flowfill
    • CVD
    • AF4
    • PTFE
  • サマリー
    • 加工における課題
    • 統合における課題

第3章 リソグラフィの課題と動向

  • 光学システム
  • ナノ・インプリントリソグラフィ
  • X線リソグラフィ
  • 電子ビームシステム
  • イオンビームシステム

第4章化学機械研磨(CMP)の課題と動向

  • 平坦化の必要性
    • リソグラフィ
    • 蒸着
    • エッチング
  • 用途
    • 誘電体
    • 金属
  • 平坦化技術
    • 局所平坦化
    • 全面平坦化
  • CMP
    • 背景
    • 調査活動
    • 利点と欠点
    • プロセスパラメータ
    • デバイス加工パラメータ

第5章 FA(ファクトリーオートメーション)の課題と動向

  • イントロダクション
  • 自動化の要素
  • フレキシブルオートメーション
  • 信頼性
  • ツールの課題と動向
  • E-Manufacturing

第6章 薄膜蒸着の課題と動向

  • 物理気相成長法(PVD)
  • 化学気相成長(CVD)技術

第7章 プラズマエッチングの課題と動向

  • イントロダクション
  • プロセッシングの課題
  • プラズマストリッピング

第8章 薬品および材料の課題と動向

  • 技術課題
  • 純度要件
  • 薬品管理
  • 気体
  • スパッタリングと蒸発材料

第9章 測定

  • 欠陥検査/ウエハー検査
  • 薄膜測定
  • リソグラフィ測定

第10章 市場予測

  • 市場成長促進因子
  • 市場予測の前提条件
  • Low-K
  • リソグラフィ
  • CMP
  • FA
  • 薄膜蒸着
  • プラズマエッチング
  • 薬品および材料
  • 測定

図表

目次

This report examines and projects the technology of equipment and materials involved in the fabrication of VLSI semiconductor devices, their likely developments, why and when their introduction or demise will take place, what problems and choices are facing users, and where the opportunities and pitfalls are. This report discusses the technology trends, products, applications, and suppliers of chemicals (liquids and gases) and equipment (lithography, plasma etching, and CMP). It also gives insights to suppliers for future user needs and should assist them in long range planning, new product development and product improvement.

Table of Contents

Chapter 1 - Introduction

Chapter 2 - Low-K Dielectric Issues and Trends

  • 2.1. Introduction
  • 2.2. Ideal Dielectric
  • 2.3. Types of Low-K Dielectrics
    • 2.3.1. FSG
    • 2.3.2. HSQ
    • 2.3.3. Nanoporous Silica
    • 2.3.4. Spin-on Polymers
    • 2.3.5. BCB
    • 2.3.6. Flowfill
    • 2.3.7. CVD
    • 2.3.8. AF4
    • 2.3.9. PTFE
  • 2.4. Summary
    • 2.4.1. Processing Issues
    • 2.4.2. Integration Issues

Chapter 3 - Lithography Issues And Trends

  • 3.1. Optical Systems
    • 3.1.1. Introduction
    • 3.1.2. Step-and-Repeat Aligners
    • 3.1.3. Deep Ultraviolet (DUV)
  • 3.2. EUV
  • 3.5. Nano-Imprint Lithography
  • 3.4. X-Ray Lithography
  • 3.3. Electron Beam Lithography
  • 3.4. Ion Beam Lithography

Chapter 4 - CMP Issues and Trends

  • 4.1. Need for Planarity
    • 4.1.1. Lithography
    • 4.1.2. Deposition
    • 4.1.3. Etching
  • 4.2. Applications
    • 4.2.1. Dielectrics
    • 4.2.2. Metals
  • 4.3. Planarization Techniques
    • 4.3.1. Local Planarization
      • 4.3.1.1. Deposition-Etchback
      • 4.3.1.2. ECR
      • 4.3.1.3. Oxide Reflow
      • 4.3.1.4. Spin-on-Glass
      • 4.3.1.5. TEOS-Ozone
      • 4.3.1.6. Laser
    • 4.3.2. Global Planarization
      • 4.3.2.1. Polymer
      • 4.3.2.2. Polyimide
      • 4.3.2.3. Isotropic Etch
      • 4.3.2.4. Spin Etch Planarization
      • 4.3.2.5. Electropolishing
  • 4.4. Chemical Mechanical Polishing (CMP)
    • 4.4.1. Background
    • 4.4.2. Research Efforts
    • 4.4.3. Advantages and Disadvantages
    • 4.4.4. Process Parameters
      • 4.4.4.1. STI Planarization
      • 4.4.4.2. Copper CMP
      • 4.4.4.3. Low-K Integration
      • 4.4.4.4. Defect Density
      • 4.4.4.5. Metrology
    • 4.4.5. Device Processing Parameters
      • 4.4.5.1. Memory Devices
      • 4.4.5.2. Logic Devices

Chapter 5 - Factory Automation Issues and Trends

  • 5.1. Introduction
  • 5.2. Elements of Automation
    • 5.2.1. Tool Automation
    • 5.2.2. Intrabay Automation
    • 5.2.3. Interbay Automation
    • 5.2.4. Material-Control System
  • 5.3. Flexible Automation
  • 5.4. Reliability
  • 5.5. Tool Issues and Trends
    • 5.5.1. Flexible Tool Interface
    • 5.5.2. Vacuum Robotics
    • 5.5.3. AGV
    • 5.5.4. Robot Control Systems
    • 5.5.5. 300-mm Wafer Transport
    • 5.5.6. Mini-Environments and Cleanroom Issues
  • 5.6. E-Manufacturing

Chapter 6 - Thin film Deposition Issues and Trends

  • 6.1. Physical Vapor Deposition
    • 6.1.1. Sputtering Technology
    • 6.1.2. Plasma Technology
    • 6.1.3. Reactor Designs
      • 6.1.3.1. Long-Throw Deposition
      • 6.1.3.2. Collimated Sputter Deposition
      • 6.1.3.3. Showerhead Deposition
      • 6.1.3.4. Ionized PVD
    • 6.1.4. Semiconductor Processing
      • 6.1.4.1. Feature Patterning
      • 6.1.4.2. Gap Fill
  • 6.2. Chemical Vapor Deposition (CVD) Techniques
    • 6.2.1. APCVD
    • 6.2.2. LPCVD
    • 6.2.3. PECVD
    • 6.2.4. HDPCVD
    • 6.2.5. ALD
      • 6.2.5.1. Gate Dielectrics
      • 6.2.5.2. Gate Electrodes
      • 6.2.5.3. Metal Interconnects
      • 6.2.5.4. Diffusion Barriers
      • 6.2.5.5. DRAM

Chapter 7 - Plasma Etching Issues and Trends

  • 7.1. Introduction
  • 7.2. Processing Issues
    • 7.2.1. Chlorine Versus Fluorine Processes
    • 7.2.2. Multilevel Structures
    • 7.2.3. New Metallization Materials
    • 7.2.4. GaAs Processing
  • 7.3. Plasma Stripping
    • 7.3.1. Photoresist Stripping
    • 7.3.2. Low-K Removal

Chapter 8 - Chemicals and Materials Issues and Trends

  • 8.1. Technology Issues
    • 8.1.1. Acids and Solvents
    • 8.1.2. Resists
  • 8.2. Purity Requirements
    • 8.2.1. Purification Methods
      • 8.2.1.1. Trends For Purity - Trace Elements
    • 8.2.2. Particulates
      • 8.2.1.1. Effects on Yield
      • 8.2.1.2. Particulate Removal Techniques
      • 8.2.1.3. Particle Monitoring
  • 8.3. Chemical Management
    • 8.3.1. Introduction
    • 8.3.2. Chemical Usage Reduction
  • 8.4. Gases
    • 8.4.1. Requirements
      • 8.4.1.1. Purification Alternatives
    • 8.4.2. Particulate Considerations
      • 8.4.2.1. Particle Monitoring
      • 8.4.2.2. Filtration Methods
    • 8.4.3. Summary
  • 8.5. Sputtering and Evaporation Materials
    • 8.5.1. Technology Issues
    • 8.5.2. Purity Requirements

Chapter 9 - Metrology

  • 9.1. Defect Review/Wafer Inspection
    • 9.1.2. Defect Review
      • 9.1.2.1. SEM Defect Review
      • 9.1.2.2. Optical Defect Review
      • 9.1.2.3. Other Defect Review
    • 9.1.3. Patterned Wafer Inspection
      • 9.1.3.1. E-Beam Patterned Wafer Inspection
      • 9.1.3.2. Optical Patterned Wafer Inspection
    • 9.1.4. Unpatterned Wafer Inspection
    • 9.1.5. Macro-Defect Inspection
  • 9.2. Thin Film Metrology
    • 9.2.1. Metal Thin-Film Metrology
    • 9.2.2. Non-Metal Thin-Film Metrology
    • 9.2.3. Substrate Metrology
  • 9.3. Lithography Metrology
    • 9.3.1. Overlay
    • 9.3.2. CD
    • 9.3.3. Mask (Reticle) Metrology/Inspection

Chapter 10 - Market Forecast

  • 10.1. Market Drivers
    • 10.1.1. Semiconductor Market
    • 10.1.2. Technical Trends
    • 10.1.3. Economic Trends
    • 10.1.4. Geographic Trends
      • 10.1.4.1. China
      • 10.1.4.2. Asia
      • 10.1.4.3. Europe
      • 10.1.4.4. Japan
      • 10.1.4.5. United States
  • 10.2. Market Forecast Assumptions
  • 10.3. Low-K Market
  • 10.4. Lithography Market
  • 10.5. CMP Market
    • 10.5.1. CMP Polisher Market
    • 10.5.2. CMP Slurry Market
  • 10.6. Factory Automation Market
  • 10.7. Thin Film Deposition Market
    • 10.7.1. Chemical Vapor Deposition Market
    • 10.7.2. Physical Vapor Deposition Market
  • 10.8. Plasma Etching Market
  • 10.9. Chemical and Materials Market
    • 10.9.1. Forecast by Chemical and Material
    • 10.9.2. Market Shares
  • 10.10. Metrology Market

FIGURES

  • 2.1: Interconnect Delay for Copper/Low-K
  • 3.1: Lithography Options For MPUs/DRAMs
  • 3.2: Lithography Options For Flash
  • 3.3: Illustration of Stepper Exposure System
  • 3.4: Lens Arrangement For Submicron Features
  • 3.5: Excimer Laser Evolution
  • 3.6: EUV Lithography
  • 3.7: Thermoplastic Nanoimprint Lithography Process
  • 3.8: Step And Flash Nanoimprint Lithography Process
  • 3.9: Illustration of X-Ray Lithography
  • 3.10: Schematic Of Scalpel Electron Beam System
  • 3.11: Multi-Source E-Beam Lithography
  • 3.12: Ion Projection Lithography System
  • 4.1: Planarization Lengths of Various Methods
  • 4.2: Normalized Removal Rates
  • 4.3: Reduced Complexity With Copper
  • 4.4: Copper Loss From CMP
  • 4.5: CMP Copper Process Technologies
  • 4.6: CMP Performance Improvements
  • 4.7: Polish Endpoint Control
  • 5.1: Material-Control System
  • 5.2: Traditional and Flexible Automated Material Handling System
  • 5.3: Overhead Monorail Delivery - Cassette in Box, Cassette in SMIF Pod
  • 5.4: Stocker Design and Interfaces
  • 5.5: Layout Of a 45nm 300mm Fab
  • 5.6: Interfaces To Factory Automation Systems
  • 6.1: Schematic Of Sputtering System
  • 6.2: Magnetron Sputtering Design
  • 6.3: Showerhead Reactor Design
  • 6.4: Ionized PVD
  • 6.5: APCVD Reactor
  • 6.6: Tube CVD Reactor
  • 6.7: HDPCVD Reactor
  • 6.8: ALD Versus PVD Copper Barrier
  • 7.1: Various Enhanced Designs (a) Helicon, (b) Multiple ECR, (c) Helical Resonator
  • 7.2: Schematic of Inductively Coupled Plasma Source
  • 7.3: Schematic of the HRe Source
  • 7.4: Schematic of the Dipole Magnet Source
  • 7.5: Schematic of Chemical Downstream Etch
  • 7.6: Silicon Trench Structure
  • 7.7: Dual Damascene Dielectric Etch Approaches
  • 8.1: Relationship Between Device Yield and Particles
  • 8.2: Relationship Between Die Yield and Chip Size
  • 8.3: Chemical Management Services Tasks
  • 8.4: ITRS Roadmap
  • 8.5: Gate-Last Approach
  • 8.6: Gate-First Approach
  • 9.1: Spectroscopic Ellipsometry Diagram
  • 9.2: ITRS Overlay Technology Roadmap
  • 9.3: Illustration Of 3D Structure
  • 9.4: ITRS Metrology Roadmap
  • 9.5: Illustration Of 3D Structure
  • 10.1: Low-K Deposition Market Shares
  • 10.2: Worldwide Lithography Market Shares
  • 10.3: Semiconductor Equipment Utilization
  • 10.4: Market Shares of Automated Wafer Transfer Suppliers
  • 10.5: Worldwide MCVD Market Shares
  • 10.6: Worldwide DCVD Market Shares
  • 10.7: Worldwide PVD Market Shares
  • 10.8: Worldwide Market Shares for Dry Etch Equipment
  • 10.9: Distribution of Etch Sales by Type
  • 10.10: Worldwide Market Shares of Liquid Chemical Suppliers
  • 10.11: Worldwide Market Shares of Photoresist Suppliers
  • 10.12: Worldwide Market Shares of Silicon Wafer Suppliers
  • 10.13: Worldwide Market Shares of Gas Suppliers
  • 10.14: Total Metrology Market Forecast
  • 10.15: Total Metrology Market Shares

TABLES

  • 2.1: Low-K Material Requirements
  • 2.2: Low-K Materials
  • 3.1: Wavelength “Generations”
  • 3.2: Characteristics of X-Ray Systems
  • 4.1: Levels of Integration of Dynamic Rams
  • 4.2: Interconnect Levels of Logic Device
  • 4.3: Typical Process Specifications
  • 4.4: Organic Polymers for IMD Applications
  • 4.5 : CMP Process Variables
  • 4.7: Optimized CMP and Post-CMP Clean Parameters
  • 4.8: Interconnect Materials by Segment
  • 5.1: Evolution Of Factory Metrics
  • 7.1: Silicon Wafer Usage
  • 7.2: Plasma Source Comparison
  • 7.3: Typical Process Specifications
  • 7.4: Dry Resist Stripping Systems
  • 8.1: Common Wafer Processing Chemicals
  • 8.2: Photoresist Stripping Solutions
  • 8.3: Potential Hazards of Processing Gases
  • 9.1: Comparison Of White-Light With Multiple-Angle Laser Ellipsometry
  • 10.1: Worldwide Capital Spending
  • 10.2: Worldwide GDP
  • 10.3: Worldwide Market Forecast Low-K Market
  • 10.4: Worldwide Stepper Market
  • 10.5: Worldwide CMP Polisher Market
  • 10.6: Worldwide CMP Market Shares
  • 10.7: Worldwide CMP Slurry Market
  • 10.8: Worldwide Forecast of Automated Transfer Tools
  • 10.9: Worldwide CVD Market Forecast
  • 10.10: Worldwide PVD Market Forecast
  • 10.11: Worldwide Market Forecast of Plasma Etching Systems
  • 10.12: Worldwide Forecast of Chemicals and Materials
  • 10.13: Total Metrology Market Forecast
Back to Top