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市場調査レポート

歪シリコンの世界市場

Strained Silicon

発行 Global Industry Analysts, Inc. 商品コード 115484
出版日 ページ情報 英文 739 Pages
納期: 即日から翌営業日
価格
こちらの商品の販売は終了いたしました。
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歪シリコンの世界市場 Strained Silicon
出版日: 2010年02月01日 ページ情報: 英文 739 Pages

当商品の販売は、2016年07月01日を持ちまして終了しました。

概要

当レポートでは、チップ速度を大幅に向上させるシリコン改良技術、歪シリコンを対象に、その開発および用途開発に対応する世界市場の現況と将来動向、競合模様を分析・展望する調査データを、概略以下の構成でお届けします。

第1章 イントロダクション、方法論、製品の定義

第2章 エグゼクティブサマリー

  • 産業概要
    • イントロダクション
    • シリコンを超える新技術
    • 概略
    • 半導体の理解
      • あらゆる電子機器の心臓部
      • ムーアの法則どおりの進化速度
      • さらなる前進
    • 市場への主な影響ファクター
      • 業界内の周期的成長需要
      • ゴードン・ムーアの予言どおりに進化を続ける産業水準
      • 末端市場需要の特性
      • 拡大する半導体内情報量
      • 環境ファクター
    • 主な市場推進要因
    • 主な市場抑制要因
    • 技術革新
      • 32ナノメータ世代プロセッサーが今ここに
      • 2011年には22ナノメータ世代マイクロプロセッサーも視野に
      • UMCが高誘電率(High-K)/メタルゲート技術の有効性を発表
      • FEIはエラーフリー・歪プロファイリングを実現する新TrueCrystal Packageを公表
      • SOITECが発表した革命的Smart Cut層転写技術
      • NGS(Next-Generation Strain):SiGenによる革命的技術
      • シリコン‐ゲルマニウムエピタキシャル成長の新工程
      • 歪精度評価の新技法
    • 技術障壁
      • 総体的製造手法への順応迅速化:課題
      • 貫通転位の制御:主要な障壁
    • 今後の方向性:来るべき世界の物語
      • 超高速コンピューティングにおける今後の発展を先導する
      • 投資要件への確かなチェックを
      • 高性能デバイスの将来を牽引する歪シリコン技術
      • プロジェクトDECISIF
    • 進行する業界再編
    • 競合シナリオ
  • 製品概要
    • 歪工学:基礎知識
      • 一軸歪と二軸歪
      • 歪方法
    • 歪シリコン応用技術
      • 歪シリコン‐ゲルマニウム(sSiGe)
      • シリコンオンインシュレーター(SOI)/歪シリコンオンインシュレーター(sSOI)
    • 歪シリコントランジスタ製造法
      • 歪シリコン多層構造
      • 歪シリコン多層構造の優位点
  • 製品および技術の導入・開発
  • 戦略的企業展開
  • 世界の主要参入企業
  • 市場見通し

第3章 競合環境

目次
Product Code: MCP-1892

This report analyzes the Global market for Strained Silicon in US$ Million. Annual forecasts are provided for the period 2006 through 2015. The report profiles 66 companies including many key and niche players such as Advanced Micro Devices, Inc., Applied Materials, Inc., ASM International NV, Atmel Corporation, AmberWave Systems Corporation, Canon, Inc., CEVA, Inc., Chartered Semiconductor Manufacturing Ltd., Honeywell International, Inc., International Business Machines Corp., Isonics Corporation, Infineon Technologies, AG, Intel Corp., International Rectifier Corp., KLA Tencor Corporation, Maxim Integrated Products, Inc., MEMC Electronic Materials, Inc., Micron Technology Inc., Mitsubishi Materials Corporation, NEC Electronics Corporation, Oki Semiconductor Company Ltd., Peregrine Semiconductor Corp., Renesas Technology Corporation, Sandia National Laboratories, Soitec S. A., STMicroelectronics N.V., Shanghai Simgui Technology Co., Ltd, Shin-Etsu Handotai Co., Ltd., Silicon Genesis Corporation, Siltronic AG, Texas Instruments Incorporated, Toshiba Corporation, Taiwan Semiconductor Manufacturing Company Limited, United Microelectronic Corporation, and Vitesse Semiconductor Corporation. Market data and analytics are derived from primary and secondary research. Company profiles are mostly extracted from URL research and reported select online sources.

Table of Contents

I. INTRODUCTION, METHODOLOGY & PRODUCT DEFINITIONS

  • Study Reliability and Reporting Limitations
  • Disclaimers
  • Data Interpretation & Reporting Level
  • Quantitative Techniques & Analytics
  • Product Definitions and Scope of Study

II. EXECUTIVE SUMMARY

1. INDUSTRY OVERVIEW

  • Introduction
  • Moving Beyond Silicon
  • Outlook
  • Table 1: World Recent Past, Current & Future Analysis for Strained Silicon - Independently Analyzed with Annual Sales Figures in US$ Million for Years 2006 through 2015 (includes corresponding Graph/Chart)
  • Understanding Semiconductors
  • The Heart of Any Electronic Device
  • Keeping Pace with Moore' s Law
  • And Going Beyond...
  • Key Factors Influencing the Market
  • The Cyclical Growth Demand Within the Industry
  • Industry Keeping Pace with Gordon Moore' s Predictions
  • End-Market Demand Characteristics
  • Increasing Content Within the Semiconductor
  • Environmental Factors
  • Key Market Drivers
  • Technology Migration: A Pre-requisite to Survive Competition
  • New Materials hold the Key
  • Copper for Superior Electrical Conductivity
  • Key Market Constraints
  • Growing Payback Periods on Invested Capital: A Prime Concern
  • Lack of Standards Acts Spoilsport
  • Need for Greater Collaboration Among the Players
  • Technological Innovations
  • The 32-nm Generation Processor is Here
  • Target ' 22-nm Generation Microprocessors' , by 2011
  • UMC Announces the Validation of High-K/Metal-Gate Technology
  • FEI Unveils the New TrueCrystal Package for Error-Free Strain Profiling
  • The Revolutionary Smart Cut(tm) Layer Transfer Technology From SOITEC
  • Smart Cut(tm) in the Manufacturing of Strained Silicon on Insulator (sSOI)
  • NGS (Next-Generation Strain): A Technology Revolution By SiGen
  • New Process for Epitaxial Germanium Growth on Silicon Oxide
  • New Technique to Evaluate the Degree of Strain
  • Technological Barriers
  • Faster Adaptation of holistic manufacturing practices: A Challenge
  • Controlling Threading Dislocation: A Major Barrier
  • Future Directions: The Shape of Things to Come
  • To Spearhead the Future Advances in Ultra High-Speed Computing
  • Put a Firm Check on Investment Requirements
  • Strained Silicon Technology To Spearhead the Future in High-Performance Devices
  • Project DECISIF
  • Consolidation Gets Underway
  • Landmark Deals Announced or Completed by Companies Engaged in Strained Silicon and Semiconductor devices, During the Year 2007 & 2008
  • Competition Scenario
  • The Historical Intel-IBM Rivalry
  • Intel and AMD Battle it out in the 45-nm Processor Servers Market
  • SiGen: The Leader in Silicon-on-Insulator (SOI) Technology

2. PRODUCT OVERVIEW

  • Strain Engineering: A Primer
  • Uni-Axial Strain and Bi-Axial Strain
  • Straining Methods
  • Strained Silicon Based Technologies
  • Strained Silicon-Germanium (sSiGe)
  • Hand in Hand with the Wireless Revolution
  • Simplified Manufacturing Process
  • Silicon on Insulator (SOI)/ Strained Silicon on Insulator (sSOI)
  • Strained Silicon-on-Insulator (sSOI): The New Industry Benchmark
  • SOI Technology Acts as a Complementary to Strained Silicon Technology
  • SOI Tests China Waters
  • Fabricating Methods of Strained Silicon Transistors
  • Strained Silicon Multi-layer Structures
  • Advantage of Strained Silicon Multi-layered structure Over Others

3. PRODUCT & TECHNOLOGY LAUNCHES/

DEVELOPMENTS
  • Maxim' s Single-Conversion Silicon Tuner Replaces Canned Tuner for Hybrid Applications
  • IQE Expands Manufacturing Processes Portfolio
  • International Rectifier Launches DirectFET(r) MOSFET Chipset
  • Jazz Semiconductor Introduces SiGe BiCMOS Tech for Next-Generation Green Analog ICs
  • AWR and austriamicrosystems Launch Process Design Kit for SiGe BiCMOS Process Technology
  • StrataLight Develops Silicon Germanium (SiGe) Chipset for 100GbE Transponders
  • Tokyo Instruments Develops Basic Technology for Non-Destructive Strain-Measuring Instrument
  • Silicon Genesis Unveils the First 20 mm Solar Cell Foils
  • Silicon Genesis Unveils the New PolyMax(tm) Process Technology
  • Fujitsu Unveils New Power-Saving CMOS Technology
  • UMC Announces the Launch of 65nm Customer Silicon, Using the Proprietary URAM Technology
  • Renesas Launches New Affordable Fabrication Technology
  • Renesas Unveils New Technology for SRAM Implementation in 45nm Generation Devices
  • Epson Commences Large-Scale Production of 0.7inch Full HD HTPS Panels
  • Intel and UC Santa Barbara Develops the First Hybrid Silicon Laser
  • Maxim Integrated Products Launches DS1091L Silicon EconOscillator(tm)
  • Oki Electric Creates Extremely Low Cost-Effective ?BOSA Chips for FTTH Modules
  • Texas Instruments Launches SiGe Process Based Op-Amps
  • Sony, Toshiba and NEC Electronics Releases High Performance System LSI
  • Silicon Genesis Unveils the First 20 mm Solar Cell Foils
  • Silicon Genesis Unveils the New PolyMax(tm) Process Technology
  • Fujitsu Unveils New Power-Saving CMOS Technology
  • UMC Announces the Launch of 65nm Customer Silicon, Using the Proprietary URAM Technology
  • Renesas Launches New Affordable Fabrication Technology
  • Renesas Unveils New Technology for SRAM Implementation in 45nm Generation Devices
  • Epson Commences Large-Scale Production of 0.7inch Full HD HTPS Panels
  • Intel and UC Santa Barbara Develops the First Hybrid Silicon Laser
  • Maxim Integrated Products Launches DS1091L Silicon EconOscillator(tm)
  • Oki Electric Creates Extremely Low Cost-Effective ?BOSA Chips for FTTH Modules
  • Texas Instruments Launches SiGe Process Based Op-Amps
  • Sony, Toshiba and NEC Electronics Releases High Performance System LSI
  • Epson and JSR Pioneers Micro-Liquid Processes
  • SiGen Presents Single Crystal Silicon Film Transfer on Substrate

4. STRATEGIC CORPORATE DEVELOPMENTS

  • Silicon Genesis Enters into Agreement with REC
  • Silicon Genesis and NorSun Enter into Agreement
  • Soitec Inaugurates New Fab Facility in Singapore
  • AMCC Enters into Strategic Alliance with Silicon Image
  • CopperGate Communication Acquires the HomePlug AV Business from Conexant
  • AMG Invest Acquires Stakes in Graphit Kropfmuhl
  • Globe Specialty Metals Acquires Stakes in Solsil
  • Intrinsiq Materials Takes Over pSiNutria from pSiVida
  • Permatex Acquires Anaerobicos
  • AmberWave Acquires Aonex Technologies
  • IBM Adopts the QuickCap NX Parasitic Extraction Software from Magma
  • IMEC Selects SOI MEMS Technology From Tronics Microsytems
  • Silex System to Acquire Minority Stake in Translucent Photonics
  • LSI Corp Takes Over Tarari
  • E-Ton Solar Tech Takes Over ADEMA Technologies
  • Gintech and MEMC Completes Agreement for Solar Wafer Supply
  • MEMC, Suntech Signs Letter of Intent for Solar Wafer Supply
  • AmberWave Signs License Agreement with LG Siltron on Strained Silicon IP
  • ARM Acquires Soisic
  • Sumco to Takeover KEM
  • Samsung and Siltronic to Construct New Fab Facility
  • ARM Collaborates with Soitec (France)

5. FOCUS ON SELECT GLOBAL PLAYERS

  • Advanced Micro Devices, Inc. (USA)
  • Applied Materials, Inc. (USA)
  • ASM International NV (Netherlands)
  • Atmel Corporation (USA)
  • AmberWave Systems Corporation (USA)
  • Canon, Inc. (Japan)
  • CEVA, Inc. (USA)
  • Chartered Semiconductor Manufacturing Ltd (Singapore)
  • Honeywell International, Inc. (USA)
  • International Business Machines Corp. (USA)
  • Isonics Corporation (USA)
  • Infineon Technologies, AG (Germany)
  • Intel Corp. (USA)
  • International Rectifier Corp. (USA)
  • KLA Tencor Corporation (USA)
  • Maxim Integrated Products, Inc. (USA)
  • MEMC Electronic Materials, Inc. (USA)
  • Micron Technology Inc. (USA)
  • Mitsubishi Materials Corporation. (Japan)
  • NEC Electronics Corporation (Japan)
  • Oki Semiconductor Company Co. Ltd. (Japan)
  • Peregrine Semiconductor Corp. (USA)
  • Renesas Technology Corporation (Japan)
  • Sandia National Laboratories (USA)
  • Soitec S. A. (France)
  • STMicroelectronics N.V. (Switzerland)
  • Shanghai Simgui Technology Co., Ltd (China)
  • Shin-Etsu Handotai Co., Ltd (Japan)
  • Silicon Genesis Corporation (USA)
  • Siltronic AG (Germany)
  • Texas Instruments Incorporated (USA)
  • Toshiba Corporation (Japan)
  • Taiwan Semiconductor Manufacturing Company Limited (Taiwan)
  • United Microelectronic Corporation (Taiwan)
  • Vitesse Semiconductor Corporation (USA)

III. COMPETITIVE LANDSCAPE

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