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パワー半導体における画期的イノベーション

Breakthrough Innovations in Power Semiconductors

発行 Frost & Sullivan 商品コード 723008
出版日 ページ情報 英文 48 Pages
納期: 即日から翌営業日
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本日の銀行送金レート: 1USD=114.94円で換算しております。
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パワー半導体における画期的イノベーション Breakthrough Innovations in Power Semiconductors
出版日: 2018年09月27日 ページ情報: 英文 48 Pages
概要

当レポートでは、世界のパワー半導体市場における近年のイノベーションについて、主にWBG (ワイドバンドギャップ) 半導体ならびに今後5-6年のうちに発生すると見込まれる新たなアプリケーションに注目して分析しており、技術情勢、アプリケーション評価、開発・導入に影響を及ぼす要因 (促進要因・課題) 、世界の動向とイノベーションの指標、技術・アプリケーションのロードマップ、市場・新しい動向についての戦略的考察などをまとめています。

第1章 エグゼクティブサマリー

第2章 技術・アプリケーション情勢の評価

  • 現在のパワーエレクトロニクス産業におけるパワー半導体の技術的な重要性
  • シリコン・WBG技術のイントロダクション
  • シリコン・WBG半導体の違い
  • パワー半導体のアプリケーションの多様性

第3章 WBG半導体:動向・促進要因・課題・新しい用途・特許・資金状況

  • WBG半導体: GaN および SiC 半導体の重要性
  • シリコン・回路小型化の限界がWBG半導体を促進
  • グリーンエネルギー・省エネ需要の高まりがWBGパワー半導体の開発を促進
  • WBG半導体の導入を妨げる課題
  • 世界のWBGパワー半導体の動向
  • WBG半導体を採用する新しいアプリケーション
  • 特許発行動向
  • 特許分析からの推測:主なフォーカスエリア
  • イノベーションを促進する主な特許保有者
  • WBG半導体における政府資金状況
  • WBG半導体のサプライチェーンモデル

第4章 WBGパワー半導体の発展を促進するイノベーション

  • SiC MOSFETを用いた保護回路の除去
  • コスト効果的な炭化ケイ素デバイス開発に向けた独自の技術
  • WBC半導体製造のための新しい基板技術
  • パワー半導体向けの先進ウェハー技術
  • 省電力GaNパワースイッチモジュール
  • パワーエレクトロニクス向けバーティカルGaN FET (窒化ガリウム型電界効果トランジスタ)
  • GaN FET
  • 高出力用バーティカル酸化ガリウムトランジスタ、ほか

第5章 将来の成長機会・戦略の見通し

  • パワー半導体の将来のロードマップ
  • アナリストの視点:パワー半導体の競合の性質および世界の導入状況
  • アナリストの視点:パワー半導体の主な魅力的用途および将来の機会

第6章 産業の契約

目次
Product Code: D858

SiC and GaN Drive Opportunities in High Power Electronics Applications

Power semiconductors are the fundamental electronic components present in any power electronic device. They have been evolving for 30 years in size and performance. The power semiconductors are capable of acting as a switch or amplify current or voltage which has enabled them to serve diverse applications ranging from logic gates in the computer processors to sound amplifiers. Research and development towards improving the performance parameters of power semiconductors and to determine new semiconductor materials apart from silicon is an on-going process. Power semiconductors are being developed in order to propel the rapid advancements in technology like 5G (5th generation) communication, wireless charging and energy conversion.

This technology and innovation report offers insights on the recent innovations in the power semiconductors. The research scope of this research service focuses mainly on the Wide Band Gap (WBG) semiconductors which are opening up new avenues in power electronics industry as a promising alternative for silicon semiconductors. This research service also offers insights on applications that might evolve in the next 5 to 6 years.

GaN (gallium nitride) and SiC (silicon carbide) are two wide band gap materials which are extensively researched in the power electronics industry as possible replacements for silicon semiconductors. Other innovations in semiconductors which will be important from future perspective would be diamond, gallium oxide and their usage in different applications such as high power electronics, radio frequency, wireless charging and 5G communications. Semiconductors are being instrumental in design of any power electronic circuits, advancements in various power electronics domain has impacted plethora of applications at the component level. Power circuits in datacentres will be benefitted from WBG semiconductors to reduce the power consumption. Wireless charging circuit design can be optimized using the GaN semiconductors such as transistors.

This report covers various WBG technologies and includes the following modules:

  • Technology landscape
  • Applications assessment
  • Factors influencing development and adoption-Key drivers and challenges
  • Global trends and innovation indicators
  • Stakeholder Initiatives and Innovation profiles
  • Breadth of applications impacted
  • Technology and application roadmaps showing the future prospect of Transistors
  • Strategic insights about market and emerging trends

Table of Contents

1.0. EXECUTIVE SUMMARY

  • 1.1. Research Scope
  • 1.2. Research Methodology
  • 1.2. Research Methodology (continued)
  • 1.3. Key Research Findings
  • 1.3. Key Research Findings (continued)

2.0. TECHNOLOGY AND APPLICATION LANDSCAPE ASSESSMENT

  • 2.1. Technological Significance of Power Semiconductors in Today's Power Electronics Industry
  • 2.2. Introduction to Silicon and WBG Technologies
  • 2.3. Differentiation between Silicon and WBG Semiconductors
  • 2.4. Application Diversity of Power Semiconductors

3.0. WBG SEMICONDUCTORS - TRENDS, DRIVERS, CHALLENGES, EMERGING APPLICATIONS, PATENT AND FUNDING SCENARIO

  • 3.1. WBG Semiconductors - Significance of GaN and SiC Semiconductors
  • 3.2. Limitations of Silicon and Circuit Miniaturization are Driving WBG Semiconductors
  • 3.3. Rising Demand for Green Energy and Energy Efficiency Propels the Development of WBG Power Semiconductors
  • 3.4. Challenges Hindering the Adoption of WBG Semiconductors
  • 3.5. Global Trends in WBG Power Semiconductors
  • 3.6. Emerging Applications Employing WBG Semiconductors
  • 3.7. Patent Publication Trends
  • 3.8. Inference from Patent Analysis: Key Focus Areas
  • 3.9. Key Patent Holders Driving Innovation
  • 3.10. Government Funding Scenarios in WBG Semiconductors
  • 3.11. Supply Chain Model for WBG Semiconductors

4.0. INNOVATIONS DRIVING THE DEVELOPMENTS IN WBG POWER SEMICONDUCTORS

  • 4.1. Elimination of Protective Circuitry using SiC MOSFETs
  • 4.2. Unique Technology for Developing Cost-efficient Silicon Carbide Devices
  • 4.3. Novel Substrate Technology for Fabrication of WBGSemiconductors
  • 4.4. Advanced Wafering Technology for Power Semiconductors
  • 4.5. Power Efficient GaN Power Switch Module
  • 4.6. Vertical GaN FETs (Gallium Nitride Field Effect Transistors) for Power Electronic Applications
  • 4.7. Gallium Nitride-based Field Effect Transistor Technology
  • 4.8. Vertical Gallium Oxide Transistor for High Power Applications
  • 4.9. Novel Technique for Fabrication of Gallium Oxide Power Devices
  • 4.10. GaN-on-Diamond Wafer Technology for Development of Power Amplifiers
  • 4.11. Diamond-based Circuits for Energy Saving Applications
  • 4.12. Diamond Substrate Technology for Boosting Gallium Nitride Performance
  • 4.13Novel Diamond Platform for High-power Electronics Applications

5.0. FUTURE GROWTH OPPORTUNITIES AND STRATEGIC PERSPECTIVES

  • 5.1. Future Roadmap for Power Semiconductors
  • 5.2. From the Analyst's Desk: What is the Nature of Competition and Global Adoption Scenario for Power Semiconductors
  • 5.3. From the Analyst's Desk: What are Key Attractive Applications and Future Opportunities for Power Semiconductors?

6.0. INDUSTRY CONTACTS

  • 6.1. Key Contacts
  • Legal Disclaimer
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