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市場調査レポート

化合物半導体の世界市場(半導体タイプ、蒸着技術、製品、用途別) - 成長機会分析と産業予測

Compound Semiconductor Market by Type (III-V Compound Semiconductors, II-VI Compound Semiconductors, Sapphire, IV-IV Compound Semiconductors), Deposition Technology, Product, and Application - Global Opportunity Analysis and Industry Forecast, 2017-2023

発行 Allied Market Research 商品コード 563350
出版日 ページ情報 英文 309 Pages
納期: 即日から翌営業日
価格
本日の銀行送金レート: 1USD=111.05円で換算しております。
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化合物半導体の世界市場(半導体タイプ、蒸着技術、製品、用途別) - 成長機会分析と産業予測 Compound Semiconductor Market by Type (III-V Compound Semiconductors, II-VI Compound Semiconductors, Sapphire, IV-IV Compound Semiconductors), Deposition Technology, Product, and Application - Global Opportunity Analysis and Industry Forecast, 2017-2023
出版日: 2017年08月01日 ページ情報: 英文 309 Pages
概要

当レポートでは、化合物半導体の世界市場に注目し、需給規模の推移を半導体タイプ、蒸着技術、製品、用途、地域の別に分析・予測するほか、市場発展の推進・制約要因や課題、技術開発、競合環境、主要参入企業などについての最新情報を集めています。

第1章 イントロダクション

  • レポート解説
  • レポートの主要利点
  • 主要市場セグメント
  • 調査方法
    • 二次情報調査
    • 一次情報取材
    • 分析ツールおよびモデル

第2章 エグゼクティブサマリー

  • 経営トップの視点

第3章 市場概要

  • 市場の定義と範囲
  • 重要所見
    • 主要影響ファクター
    • 主要投資ポケット
    • 主要成功戦略
  • Porterのファイブフォース分析
    • Porterのファイブフォース分析
  • バリューチェーン分析
    • 原材料供給業者
    • メーカー
    • インテグレーター
    • 最終利用者
  • PESTLE分析
  • 市場シェア分析
  • 競合分析
  • 特許分析
  • 市場動態
    • 推進要因
    • 制約要因
    • 成長機会

第4章 化合物半導体市場 - 半導体タイプ別

  • イントロダクション
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
  • III-V族半導体
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
    • 窒化ガリウム(GaN)
    • ガリウムリン(GaP)
    • ガリウムヒ素(GaAS)
    • インジウムリン(InP)
    • インジウムアンチモン(InSb)
  • II-VI族半導体
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
    • カドミウムセレニド(CdSe)
    • カドミウムテルル(CdTe)
    • 亜鉛セレニド(ZnSe)
  • サファイア
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
  • IV-IV族半導体
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
    • 炭化ケイ素(SiC)
    • シリコンゲルマニウム(SiGe)
  • その他
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
    • アルミニウムガリウムヒ素(AlGaAs)
    • アルミニウムインジウムヒ素(AlInAs)
    • 窒化アルミニウムガリウム(AlGaN)
    • アルミニウムガリウムリン(AlGaP)
    • 窒化インジウムガリウム(InGaN)
    • カドミウム亜鉛テルル(CdZnTe)
    • 水銀カドミウムテルル(HgCdTe)

第5章 化合物半導体市場 - 蒸着技術別

  • イントロダクション
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
  • 化学蒸着(CVD)
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
    • 金属有機化学蒸着(MOMBE)
  • ハイドライド気相成長(HVPE)
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
  • アモノサーマル
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
    • 液相成長(LPE)
  • 原子層蒸着(ALD)
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
  • その他
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測

第6章 化合物半導体市場 - 製品別

  • イントロダクション
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
  • 電力半導体
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
  • トランジスタ
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
    • 高電子移動度トランジスタ(HEMT)
    • 金属酸化膜半導体電界効果トランジスタ(MOSFET)
    • 金属-半導体電界効果トランジスタ(MESFET)
  • 集積回路(IC)
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
    • モノリシックマイクロ波集積回路(MMIC)
    • 高周波集積回路(RFIC)
  • ダイオードおよび整流素子
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
    • PINダイオード
    • ツェナーダイオード
    • ショットキーダイオード
    • 発光ダイオード
  • その他
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
  • その他
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測

第7章 化合物半導体市場 - 用途別

  • イントロダクション
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
  • 情報技術(IT)・遠隔通信
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
    • 信号増幅器および交換システム
    • 衛星通信
    • レーダー
    • 無線周波数装置
  • 工業、エネルギーおよび電力
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
    • スマートグリッド
    • 風力タービンおよび風力発電システム
    • 太陽光発電インバーター
    • モーター駆動装置
  • 航空宇宙・防衛
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
    • 戦闘車両
    • 艦船
    • マイクロ波放射装置
  • 自動車
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
    • 電気自動車およびハイブリッド電気自動車
    • 自動車ブレーキシステム
    • 鉄道牽引車
    • 自動車モーター駆動装置
  • 家庭用電子機器
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
    • インバーター
    • LED照明
    • モード切替家庭用電源システム
  • 医療
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
    • インプラント型医療装置(IMD)
    • バイオ医療電子機器

第8章 化合物半導体市場 - 地域別

  • イントロダクション
  • 北米
    • 重要市場動向、成長ファクター、機会
    • 市場の規模と予測
    • 米国
    • カナダ
    • メキシコ
  • 欧州
  • アジア太平洋地域
  • 中南米・中東

第9章 企業プロファイル

目次
Product Code: SE 171006

The global compound semiconductor market was valued at $66,623 million in 2016, and is expected to reach $142,586 million by 2023, registering a CAGR of 11.3% from 2017 to 2023. Compound semiconductors, such as GaN and SiC, comprises two or more elements of the periodic table, and are synthesized using deposition technologies. The devices manufactured using semiconductors form essential components of most electronic circuits, , as they possess unique properties such as, wide bandgap, high operational temperatures, high current & voltage holding capacity, and ability to generate microwave signals.

The global compound semiconductor market is driven by widespread applications of gallium nitride electronics and rise in demand for different automotive electronics in the Asia-Pacific region. Moreover, increase in demand for optoelectronics devices & wireless communication technologies and rise in adoption of photovoltaics boost the market growth. In addition, evolution of compound semiconductor compliant technology & products in the Asia-Pacific region and increase in volume of data transactions drive the market growth. However, rise in compatibility issues related to high-end materials, such as silicon, restrains the market growth. Conversely, increase in use of GaN in smart grid as compared to traditional silicon semiconductors is expected to provide growth opportunities for the market.

The global compound semiconductor market is segmented on the basis of type, deposition technology, product, application, and geography. Based on type, it is categorized into III-V compound semiconductors, II-VI compound semiconductors, sapphire, IV-IV compound semiconductors, and others (aluminum gallium arsenide (ALGAAS), aluminum indium arsenide (ALINAS), aluminum gallium nitride (ALGAN), aluminum gallium phosphide (ALGAP), indium gallium nitride (INGAN), cadmium zinc telluride (CDZNTE), and mercury cadmium telluride (HGCDTE)). The III-V compound semiconductors segment is further divided into gallium nitride (GAN), gallium phosphide (GAP), gallium arsenide (GAAS), indium phosphide (INP), and indium antimonide (INSB).

The II-VI compound semiconductors segment is classified into cadmium selenide (CDSE), cadmium telluride (CDTE), and zinc selenide (ZNSE). The IV-IV compound semiconductors segment is bifurcated into silicon carbide (SIC) and silicon germanium (SIGE). Based on deposition technology, the market is divided into chemical vapor deposition (CVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), ammonothermal, liquid phase epitaxy (LPE), atomic layer deposition (ALD), and others. On the basis of product, it is categorized into power semiconductor, transistors, integrated circuits (ICs), diodes & rectifiers, and others. The transistors segment is further classified into high electron mobility transistors (HEMTs), metal oxide semiconductor field effect transistors (MOSFETs), and metal semiconductor field effect transistors (MESFETs). ICs are further bifurcated into monolithic microwave integrated circuits (MMICs) and radio frequency integrated circuits (RFICs). The diode & rectifiers segment is further divided into PIN diode, Zener diode, Schottky diode, and light emitting diode. The applications covered in this study include IT & telecom, industrial and energy & power, aerospace & defense, automotive, consumer electronics, and healthcare.

The IT & telecom segment is further categorized into signal amplifiers & switching systems, satellite communication applications, radar applications, and RF. The aerospace & defense segment is classified into combat vehicles, ships & vessels, and microwave radiation. The industrial and energy & power segment is further bifurcated into wind turbines and wind power systems. The consumer electronics segment is further divided into inverters in consumer applications, LED lighting in consumer applications, and switch mode consumer power supply systems. The automotive segment is further categorized into electric vehicles & hybrid electric vehicles, automotive braking systems, rail traction, and automobile motor drives. The healthcare segment is bifurcated into implantable medical devices and biomedical electronics.

Geographically, the market is analyzed across North America (U.S., Mexico, and Canada), Europe (UK, Germany, France, and rest of Europe), Asia-Pacific (China, Japan, India, Australia, and rest of Asia-Pacific), and LAMEA (Latin America, Middle East, and Africa).

The major companies profiled in the report include Cree Inc., International Quantum Epitaxy PLC., Freescale Semiconductor Inc., LM Ericsson Telefon AB, Taiwan Semiconductor Manufacturing Company Ltd., Renesas Electronics Corporation, Texas Instruments, Inc., STMicroelectronics NV, Infineon Technologies AG, and Toshiba Corporation.

KEY BENEFITS FOR STAKEHOLDERS

  • The report provides comprehensive analysis of the current trends and future estimations in the global compound semiconductor market.
  • The report offers the competitive scenario of the industry along with the growth trends, structure, drivers, scope, opportunities, and challenges.
  • The report includes a detailed analysis of the key segments to provide insights on the market dynamics.
  • Porter's five forces analysis highlights the potential of buyers & suppliers and the competitive structure of the market to devise effective growth strategies and facilitate better decision-making.

KEY MARKET SEGMENTS

By Type

  • III-V Compound Semiconductors
  • Gallium Nitride (GAN)
  • Gallium Phosphide (GAP)
  • Gallium Arsenide (GAAS)
  • Indium Phosphide (INP)
  • Indium Antimonide (INSB)
  • II-VI Compound Semiconductors
  • Cadmium Selenide (CDSE)
  • Cadmium Telluride (CDTE)
  • Zinc Selenide (ZNSE)
  • Sapphire
  • IV-IV Compound Semiconductors
  • Silicon Carbide (SIC)
  • Silicon Germanium (SIGE)
  • Others
  • Aluminum Gallium Arsenide (ALGAAS)
  • Aluminum Indium Arsenide (ALINAS)
  • Aluminum Gallium Nitride (ALGAN)
  • Aluminum Gallium Phosphide (ALGAP)
  • Indium Gallium Nitride (INGAN)
  • Cadmium Zinc Telluride (CDZNTE)
  • Mercury Cadmium Telluride (HGCDTE)

By Deposition Technology

  • Chemical Vapor Deposition (CVD)
  • Metal Organic Chemical Vapor Deposition (MOCVD)
  • Molecular Beam Epitaxy (MBE)
  • Metal Organic Molecular Beam Epitaxy (MOMBE)
  • Hydride Vapor Phase Epitaxy (HVPE)
  • Ammonothermal
  • Liquid Phase Epitaxy (LPE)
  • Atomic Layer Deposition (ALD)
  • Others
  • NA-FLUX LPE

By Product

  • Power Semiconductor
  • Transistors
  • High Electron Mobility Transistors (HEMTs)
  • Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)
  • Metal Semiconductor Field Effect Transistors (MESFETs)
  • Integrated Circuits (ICs)
  • Monolithic Microwave Integrated Circuits(MMICs)
  • Radio Frequency Integrated Circuits (RFICs)
  • Diodes & Rectifiers
  • PIN diode
  • Zener Diode
  • Schottky Diode
  • Light Emitting Diode
  • Others

By Application

  • ICT Sector
  • Signal Amplifiers & Switching Systems
  • Satellite Communication
  • Radar
  • RF
  • Aerospace & Defense
  • Combat Vehicles
  • Ships & Vessels
  • Microwave Radiation
  • Industrial and Energy & Power
  • Smart Grid
  • Wind Turbines & Wind Power Systems
  • Photovoltaic Inverters
  • Motor Drives
  • Consumer Electronics
  • Inverters in Consumer
  • LED Lighting in Consumer
  • Switch Mode Consumer Power Supply Systems
  • Automotive
  • Electric Vehicles & Hybrid Electric Vehicles
  • Automotive Braking Systems
  • Rail Traction
  • Automobile Motor Drives
  • Medical
  • Implantable Medical Devices
  • Biomedical Electronics

By Geography

  • North America
  • U.S.
  • Mexico
  • Canada
  • Europe
  • UK
  • Germany
  • France
  • Rest of Europe
  • Asia-Pacific
  • China
  • Japan
  • India
  • Australia
  • Rest of Asia-Pacific
  • LAMEA
  • Latin America
  • Middle East
  • Africa
  • Key Players
  • Cree Inc.
  • International Quantum Epitaxy Plc.
  • Freescale Semiconductor Inc.
  • LM Ericsson Telefon AB
  • Taiwan Semiconductor Manufacturing Company Ltd.
  • Renesas Electronics Corporation
  • Texas Instruments, Inc.
  • STMicroelectronics NV
  • Infineon Technologies AG
  • Toshiba Corporation
  • The other players in the value chain include (profiles not included in the report)
  • Mining & Chemical Products Ltd.
  • Umicore Indium Products
  • United Mineral & Chemical Corp

Table of Contents

CHAPTER 1 Introduction

  • 1.1. Report Description
  • 1.2. Key Benefits for Stakeholders
  • 1.3. Key Market Segments
  • 1.4. Research Methodology
    • 1.4.1. Secondary Research
    • 1.4.2. Primary Research
    • 1.4.3. Analyst Tools and Models

Chapter 2 Executive Summary

  • 2.1. CXO Perspective

Chapter 3 Market Overview

  • 3.1. Market Definition and Scope
  • 3.2. Key Findings
    • 3.2.1. Top Impacting Factors
    • 3.2.2. Top Winning Strategies
    • 3.2.3. Top Investment Pockets
  • 3.3. Porters Five Forces Analysis
    • 3.3.1. Porters Five Forces Analysis
  • 3.4. Value Chain Analysis
    • 3.4.1. Raw Material Providers
    • 3.4.2. Manufacturers
    • 3.4.3. Integrators
    • 3.4.4. End Users
  • 3.5. Pestle Analysis
  • 3.6. Market Share Analysis, 2016
  • 3.7. Competitive Analysis
  • 3.8. Patent Analysis
  • 3.9. Market Dynamics
    • 3.9.1. Drivers
    • 3.9.2. Restraint
    • 3.9.3. Opportunity

CHAPTER 4 COMPOUND SEMICONDUCTOR MARKET, BY TYPE

  • 4.1. INTRODUCTION
    • 4.1.1. Key market trends, growth factors, and opportunities
    • 4.1.2. Market size and forecast
  • 4.2. III-V COMPOUND SEMICONDUCTORS
    • 4.2.1. Key market trends, growth factors, and opportunities
    • 4.2.2. Market size and forecast
    • 4.2.3. Gallium nitride (GaN)
      • 4.2.3.1. Market size and forecast
    • 4.2.4. Gallium phosphide (GaP)
      • 4.2.4.1. Market size and forecast
    • 4.2.5. Gallium arsenide (GaAS)
      • 4.2.5.1. Market size and forecast
    • 4.2.6. Indium phosphide (InP)
      • 4.2.6.1. Market size and forecast
    • 4.2.7. Indium antimonide (InSb)
      • 4.2.7.1. Market size and forecast
  • 4.3. II-VI COMPOUND SEMICONDUCTORS
    • 4.3.1. Key market trends, growth factors, and opportunities
    • 4.3.2. Market size and forecast
    • 4.3.3. Cadmium selenide (CdSe)
      • 4.3.3.1. Market size and forecast
    • 4.3.4. Cadmium telluride (CdTe)
      • 4.3.4.1. Market size and forecast
    • 4.3.5. Zinc selenide (ZnSe)
      • 4.3.5.1. Market size and forecast
  • 4.4. SAPPHIRE
    • 4.4.1. Key market trends, growth factors, and opportunities
    • 4.4.2. Market size and forecast
  • 4.5. IV-IV COMPOUND SEMICONDUCTORS
    • 4.5.1. Key market trends, growth factors, and opportunities
    • 4.5.2. Market size and forecast
    • 4.5.3. Silicon carbide (SiC)
      • 4.5.3.1. Market size and forecast
    • 4.5.4. Silicon germanium (SiGe)
      • 4.5.4.1. Market size and forecast
  • 4.6. OTHERS
    • 4.6.1. Key market trends, growth factors, and opportunities
    • 4.6.2. Market size and forecast
    • 4.6.3. Aluminum gallium arsenide (AlGaAs)
      • 4.6.3.1. Market size and forecast
    • 4.6.4. Aluminum indium arsenide (AlInAs)
      • 4.6.4.1. Market size and forecast
    • 4.6.5. Aluminum gallium nitride (AlGaN)
      • 4.6.5.1. Market size and forecast
    • 4.6.6. Aluminum gallium phosphide (AlGaP)
      • 4.6.6.1. Market size and forecast
    • 4.6.7. Indium gallium nitride (InGaN)
      • 4.6.7.1. Market size and forecast
    • 4.6.8. Cadmium zinc telluride (CdZnTe)
      • 4.6.8.1. Market size and forecast
    • 4.6.9. Mercury cadmium telluride (HgCdTe)
      • 4.6.9.1. Market size and forecast

CHAPTER 5 COMPOUND SEMICONDUCTOR MARKET, BY DEPOSITION TECHNOLOGY

  • 5.1. INTRODUCTION
    • 5.1.1. Key market trends, growth factors, and opportunities
    • 5.1.2. Market size and forecast
  • 5.2. CHEMICAL VAPOR DEPOSITION (CVD)
    • 5.2.1. Key market trends, growth factors, and opportunities
    • 5.2.2. Market size and forecast
    • 5.2.3. Metal organic chemical vapor deposition (MOCVD)
      • 5.2.3.1. Market size and forecast
  • 5.3. MOLECULAR BEAM EPITAXY (MBE)
    • 5.3.1. Key market trends, growth factors, and opportunities
    • 5.3.2. Market size and forecast
    • 5.3.3. Metal organic molecular beam epitaxy (MOMBE)
      • 5.3.3.1. Market size and forecast
  • 5.4. HYDRIDE VAPOR PHASE EPITAXY (HVPE)
    • 5.4.1. Key market trends, growth factors, and opportunities
    • 5.4.2. Market size and forecast
  • 5.5. AMMONOTHERMAL
    • 5.5.1. Key market trends, growth factors, and opportunities
    • 5.5.2. Market size and forecast
      • 5.5.2.1. Liquid Phase Epitaxy (LPE)
    • 5.5.3. Key market trends, growth factors, and opportunities
    • 5.5.4. Market size and forecast
  • 5.6. ATOMIC LAYER DEPOSITION (ALD)
    • 5.6.1. Key market trends, growth factors, and opportunities
    • 5.6.2. Market size and forecast
  • 5.7. OTHERS
    • 5.7.1. Key market trends, growth factors, and opportunities
    • 5.7.2. Market size and forecast

CHAPTER 6 COMPOUND SEMICONDUCTOR MARKET, BY PRODUCT

  • 6.1. INTRODUCTION
    • 6.1.1. Key market trends, growth factors, and opportunities
    • 6.1.2. Market size and forecast
  • 6.2. POWER SEMICONDUCTOR
    • 6.2.1. Key market trends, growth factors, and opportunities
    • 6.2.2. Market size and forecast
  • 6.3. TRANSISTOR
    • 6.3.1. Key market trends, growth factors, and opportunities
    • 6.3.2. Market size and forecast
    • 6.3.3. High electron mobility transistors (HEMTs)
      • 6.3.3.1. Market size and forecast
    • 6.3.4. Metal oxide semiconductor field-effect transistors (MOSFETs)
      • 6.3.4.1. Market size and forecast
    • 6.3.5. Metal semiconductor field-effect transistors (MESFETs)
      • 6.3.5.1. Market size and forecast
  • 6.4. INTEGRATED CIRCUITS (ICS)
    • 6.4.1. Key market trends, growth factors, and opportunities
    • 6.4.2. Market size and forecast
    • 6.4.3. Monolithic microwave integrated circuits (MMICs)
      • 6.4.3.1. Market size and forecast
    • 6.4.4. Radio frequency integrated circuits (RFICs)
      • 6.4.4.1. Market size and forecast
  • 6.5. DIODES & RECTIFIERS
    • 6.5.1. Key market trends, growth factors, and opportunities
    • 6.5.2. Market size and forecast
    • 6.5.3. PIN diode
      • 6.5.3.1. Market size and forecast
    • 6.5.4. Zener diode
      • 6.5.4.1. Market size and forecast
    • 6.5.5. Schottky diode
      • 6.5.5.1. Market size and forecast
    • 6.5.6. Light-emitting diode (LED)
      • 6.5.6.1. Market size and forecast
  • 6.6. OTHERS
    • 6.6.1. Key market trends, growth factors, and opportunities
    • 6.6.2. Market size and forecast

CHAPTER 7 COMPOUND SEMICONDUCTOR MARKET, BY APPLICATION

  • 7.1. INTRODUCTION
    • 7.1.1. Key market trends, key growth factors, and opportunities
    • 7.1.2. Market size and forecast
  • 7.2. IT & TELECOM
    • 7.2.1. Key market trends, growth factors, and opportunities
    • 7.2.2. Market size and forecast
    • 7.2.3. Signal amplifiers & switching systems
      • 7.2.3.1. Market size and forecast
    • 7.2.4. Satellite communication
      • 7.2.4.1. Market size and forecast
    • 7.2.5. Radar
      • 7.2.5.1. Market size and forecast
    • 7.2.6. RF
      • 7.2.6.1. Market size and forecast
  • 7.3. INDUSTRIAL AND ENERGY & POWER
    • 7.3.1. Key market trends, growth factors, and opportunities
    • 7.3.2. Market size and forecast
    • 7.3.3. Smart grid
      • 7.3.3.1. Market size and forecast
    • 7.3.4. Wind turbines & wind power systems
      • 7.3.4.1. Market size and forecast
    • 7.3.5. Photovoltaic inverters
    • 7.3.6. Motor drives
      • 7.3.6.1. Market size and forecast
  • 7.4. AEROSPACE & DEFENSE
    • 7.4.1. Key market trends, growth factors, and opportunities
    • 7.4.2. Market size and forecast
    • 7.4.3. Combat vehicles
      • 7.4.3.1. Market size and forecast
    • 7.4.4. Ships & vessels
      • 7.4.4.1. Market size and forecast
    • 7.4.5. Microwave radiation
      • 7.4.5.1. Market size and forecast
  • 7.5. AUTOMOTIVE
    • 7.5.1. Key market trends, growth factors, and opportunities
    • 7.5.2. Market size and forecast
    • 7.5.3. Electric vehicles & hybrid electric vehicles
      • 7.5.3.1. Market size and forecast
    • 7.5.4. Automotive braking systems
      • 7.5.4.1. Market size and forecast
    • 7.5.5. Rail traction
      • 7.5.5.1. Market size and forecast
    • 7.5.6. Automobile motor drives
      • 7.5.6.1. Market size and forecast
  • 7.6. CONSUMER ELECTRONICS
    • 7.6.1. Key market trends, growth factors, and opportunities
    • 7.6.2. Market size and forecast
    • 7.6.3. Inverters
      • 7.6.3.1. Market size and forecast
    • 7.6.4. LED lighting
      • 7.6.4.1. Market size and forecast
    • 7.6.5. Switch mode consumer power supply system (SMPS)
      • 7.6.5.1. Market size and forecast
  • 7.7. HEALTHCARE
    • 7.7.1. Key market trends, growth factors, and opportunities
    • 7.7.2. Market size and forecast
    • 7.7.3. Implantable medical devices (IMDs)
      • 7.7.3.1. Market size and forecast
    • 7.7.4. Biomedical electronics
      • 7.7.4.1. Market size and forecast

CHAPTER 8 COMPOUND SEMICONDUCTOR MARKET, BY GEOGRAPHY

  • 8.1. INTRODUCTION
  • 8.2. NORTH AMERICA
    • 8.2.1. Key market trends, growth factors, and opportunities
    • 8.2.2. Market size and forecast
    • 8.2.3. U.S.
      • 8.2.3.1. Market size and forecast
    • 8.2.4. Canada
      • 8.2.4.1. Market size and forecast
    • 8.2.5. Mexico
      • 8.2.5.1. Market size and forecast
  • 8.3. EUROPE
    • 8.3.1. Introduction
    • 8.3.2. Key market trends, growth factors, and opportunities
    • 8.3.3. Market size and forecast
    • 8.3.4. UK
      • 8.3.4.1. Market size and forecast
    • 8.3.5. Germany
      • 8.3.5.1. Market size and forecast
    • 8.3.6. France
      • 8.3.6.1. Market size and forecast
    • 8.3.7. Rest of Europe
      • 8.3.7.1. Market size and forecast
  • 8.4. ASIA-PACIFIC
    • 8.4.1. Introduction
    • 8.4.2. Key market trends, growth factors, and opportunities
    • 8.4.3. Market size and forecast
    • 8.4.4. China
      • 8.4.4.1. Market size and forecast
    • 8.4.5. Japan
      • 8.4.5.1. Market size and forecast
    • 8.4.6. India
      • 8.4.6.1. Market size and forecast
    • 8.4.7. Australia
      • 8.4.7.1. Market size and forecast
    • 8.4.8. Rest of Asia-Pacific
  • 8.5. LAMEA
    • 8.5.1. Introduction
    • 8.5.2. Key market trends, growth factors, and opportunities
    • 8.5.3. Market size and forecast
    • 8.5.4. Latin America
      • 8.5.4.1. Market size and forecast
    • 8.5.5. Middle East
      • 8.5.5.1. Market size and forecast
    • 8.5.6. Africa
      • 8.5.6.1. Market size and forecast

CHAPTER 9 COMPANY PROFILE

  • 9.1. CREE INC.
    • 9.1.1. Company overview
    • 9.1.2. Operating business segments
    • 9.1.3. Business performance
  • 9.2. INFINEON TECHNOLOGIES AG
    • 9.2.1. Company overview
    • 9.2.2. Operating business segments
    • 9.2.3. Business performance
    • 9.2.4. Key strategic moves and developments
  • 9.3. INTERNATIONAL QUANTUM EPITAXY PLC.
    • 9.3.1. Company overview
    • 9.3.2. Operating business segments
    • 9.3.3. Business performance
    • 9.3.4. Key strategic moves and developments
  • 9.4. TOSHIBA CORPORATION
    • 9.4.1. Company overview
    • 9.4.2. Operating business segments
    • 9.4.3. Business performance
    • 9.4.4. Key strategic moves and developments
  • 9.5. LM ERICSSON TELEFON AB
    • 9.5.1. Company overview
    • 9.5.2. Operating business segments
    • 9.5.3. Business performance
  • 9.6. NXP SEMICONDUCTORS
    • 9.6.1. Company overview
    • 9.6.2. Operating business segments
    • 9.6.3. Business performance
    • 9.6.4. Key strategic moves and developments
  • 9.7. RENESAS ELECTRONICS CORPORATION
    • 9.7.1. Company overview
    • 9.7.2. Operating business segments
    • 9.7.3. Business performance
  • 9.8. STMICROELECTRONICS NV
    • 9.8.1. Company overview
    • 9.8.2. Operating business segments
    • 9.8.3. Business performance
    • 9.8.4. Key strategic moves and developments
  • 9.9. TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    • 9.9.1. Company overview
    • 9.9.2. Operating business segments
    • 9.9.3. Business performance
    • 9.9.4. Key strategic moves and developments
  • 9.10. TEXAS INSTRUMENTS
    • 9.10.1. Company overview
    • 9.10.2. Operating business segments
    • 9.10.3. Business performance
    • 9.10.4. Key strategic moves and developments
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