Abstract
With an annual volume of more than 5 millions units of 2" equivalent
substrates, GaN-based green, blue and white LED is the main eater of nitride
materials targeting a $3.5B market at devices level. Current split shows that
SiC substrates is accounting for ~10% of the total production, sapphire making
the balancing.
Sapphire market for LED is now tending toward equilibrium with 2/3 LED
manufactured on 2" and 1/3 on 3" substrates and a recent introduction of 4"
production announced by Japanese Showa Denko. Sapphire material market has
then just beaten the $150M barrier in 2006.
SiC is also entering in a 4" production stage at CREE but cannot be considered
as a real open market.
The substrate market playground can be seen as partially unstable because of
the rapid emergence of new substrates for GaN epitaxy. GaN-on-Silicon,
GaN-on-ZnO, GaN-on-Germanium, GaN-on-Glass, GaN-on-AlN and composite
substrates like GaN-on-diamond or Picogiga GaN-on-SopSiC are now pursuing the
same Rubicon: propose the best compromise between GaN quality, large diameter,
low bowing, high Tc, controlled TCE and of course, low cost. 6" is the main
target and is now available of-the-shelf from selected companies. That is
opening new doors to higher LED productivity toward the gigantic SSL general
illumination business.
In the RF business, GaN HEMT is now ready to challenge Si LDMOS and GaAs pHEMT
in the telecommunication base stations market (3G, 4G, WiMAX…). With
devices reaching Psat=174W @ 6GHz under 48V polarisation, the GaN technology
can be partially implemented among the 2 millions deployed mobile phone base
stations and coming next WiMAX infrastructures. A 10,000 x 4" epiwafers market
is forecasted in a very near future.
Gallium Nitride (GaN), as silicon carbide (SiC), is a wide bandgap material
allowing reaching high breakdown voltage. Thus road to power electronics
applications is wide open. However, GaN growth is based on an ethero epitaxy
process with often an AlN nucleation layer forcing the devices to be designed
laterally. Lateral devices are limited in term of breakdown voltage compared
to vertical ones and become rapidly bulky for high power density ranges.
This situation deals with a subtle balance between substrate diameter, power
density, chip size and device cost. In other terms, GaN power devices on
sapphire, silicon or composite substrates can compete with SiC from a cost
point of view using larger substrates (4") to compensate the bigger chip size
at a given power density.
Table of Contents
Glossary
Executive summary
- Main targeted applications of GaN devices
- 2005-2012 GaN devices revenues in M$ for LED, Laser, RF & power electronics
- 2005-2012 GaN substrate revenues in M$ for LED, Laser, RF & power
electronics
GaN crystal growth techniques
- MOCVD, MBE, HVPE
- Advantages & Drawbacks
- Comparison table and main vendors
GaN material current developments
- Direct growth or buffer approach
- Composite substrates: wafer bonding
- Example of current realizations:
- Picogiga / Soitec
- Aonex
- BlueGlass
- IMEC
- AZZURO
- Toshiba Ceramic
- Nitronex
- TDI
- Hitachi Cable
- Cermet
- Group4Lab
- SP3 Diamond
- GaN / Silicon epiwafer manufacturers
- GaN/Sapphire & GaN/SiC epiwafer manufacturers
- Bulk / free-standing GaN wafers specifications
- Examples of current GaN material pricing
- GaN substrates / applications matrix
- Tentative time-to-market for different substrates in different applications
Optoelectronic Markets
GaN HB-LED market
- 2001-2012 GaN LED market in M$
- HB-LED 2006 applications breakdown
- HB-LED 2006 market shares per company
- Main agreements and cross-licenses
- 2006 market breakdown by material
- Typical structure
- Emitting color in function of In concentration
- Trends in High Power LEDs
- Different White LED approaches
- White LED performance roadmap
- GaN HB-LEDs price analysis
- New technologies in development
- Material analysis
- 2005-2012 Estimated substrates volume (SiC & Sapphire)
- 2006 sapphire substrates: price, units and diameter analysis
- 2005-2012 Sapphire substrates market for LED in volume by diameter &
related market
- 2005-2012 Sapphire substrates market for LED in value, split by diameter
- Sapphire substrates main manufacturers
- 2005-2012SiC wafers diameter evolution
- 2005-2012 SiC substrates market for LED
- Conclusions on HB-LED market
Blue Laser Diodes
- Introduction: Blue laser diodes status
- Targeted applications for GaN LD
- Blue laser diodes market in game stations
- GaN-based laser diodes state-of-the-art
- Known supply-chain in the blue LD business
- 2005-2012 annual volumes for GaN LD for various applications and related
device revenues
- 2005-2012 annual volumes for 2" bulk GaN wafers for blue LD and related
substrates revenues
- Future GaN laser applications: laser TV and projectors
- Conclusion on Blue Laser Diodes market
GaN RF devices market
- Introduction: Market drivers of the GaN in RF applications
- GaN RF applicative markets
- GaN / SiC / Si / GaAs RF transistors comparison
- GaN vs Si FET structure
- GaN FET state-of-the-art
- Example of current offers
- RFMD
- Eudyna
- CREE
- Nitronex
- OKI
- GaN FET commercialization plan
- Food chain & players
- Global PA market per applications
Wireless phone infrastructures: BTS market
- Recent announcements
- BTS company market shares
- PA: Si LDMOS & GaAs pHEMT 2006 status
- Ranking of PA' s manufacturers for base stations
- Base stations installed base 2004-2010 by standards
- Total accessible market for GaN FET in 3G BTS
Defense market
- Main advantages of GaN RF in defense applications
- Example of US DARPA requests
- n-going R&D programs in Europe for GaN
Satellite market
- GaN HEMT opportunities for Satcom
V-SAT terminals market
- GaN HEMT opportunities for V-SAT
- V-SAT market data
WiMAX market
- WiMAX technology
- WiMAX standards
- WiMAX food chain
- 2005-2010 worldwide annual volumes and related revenues for WiMAX BTS
infrastructures
GaN RF market synthesis
- 2005-2010 forecasts for GaN RF devices market by applications
- 2005-2010 annual needs for GaN 4" wafers in various RF applications
- Conclusions
GaN power electronics
Generalities
- Positioning of the GaN in the power electronics
- Silicon vs. GaN device characteristics
- Possible applications for GaN in power electronics
- Power electronics market segmentation
- GaN-based power electronics applications roadmap
- Estimated accessible markets, growth rate, and time to market for GaN
based power electronics
- Estimation of 4" GaN epiwafers volume consumption for power electronics
- GaN vs. SiC SWOT analysis
- Overview of initiatives in GaN-based power devices
- Theoretical limit of GaN Schottky diode Vb
Power Factor Correctors market
- GaN Schottky diodes (SBD) Main market characteristics
- GaN SBD main advantages in PFC circuits
- PFC efficiency comparison in function of junction T°
- SBD manufacturing cost comparison: SiC, GaN/Si and GaN/sapphire
- 2006-2012 GaN Schottky diodes market forecasts in units and sales for PFC
business
- 2006-2012 GaN epiwafer shipment for PFC business
- TOP 15 OEM power supplies manufacturers
Automotive applications: HEV
- Why GaN in cars ?
- Hybrid Electrical Vehicle (HEV) requirements.
- HEV: Expected results of GaN introduction:
- The TOP 5 key requirements for transistors in HEV
- Added value analysis of GaN electronics for HEV
- The HEV market
- Sales projection for HEV to 2015
- Typical HEV power inverter module cost breakdown
- Case study: Silicon vs. GaN HEV inverter cost breakdown
- Sales volume projection for GaN diodes and transistors in automotive
applications
- Sales revenues projection for GaN diodes and transistors in automotive
applications
- Industry involvement: Possible GaN devices buyers
- Conclusion: perspective for GaN devices in the HEV market
UPS applications
- Global UPS market
- UPS : a concentrated market
- UPS products segments
- UPS architectures examples
- GaN success chances in UPS
- GaN for UPS market
GaN power electronics market synthesis
- 2007-2015 Total Accessible Market (TAM) for GaN-based semiconductor
devices in high power electronics
- 2007-2015 Total Accessible Market (TAM) for GaN-based semiconductor
devices in high power electronics
General conclusions
