Abstract
Driven by the needs in the semiconductor industry for planar wafers across the
die and across the wafer, chemical mechanical polishing (CMP) has emerged as
the technology of choice among semiconductor manufacturers. While other
planarization methods are satisfactory on the 0.35 μm and above regime of
feature sizes, only CMP offers exemplary capabilities below 0.35 μm.
The advantages of CMP are:
- Improved global planarity over non-CMP methods
- Compatible with any conventional dielectric
- Global planarity at 0.35 μm or less feature sizes
- Reduced process steps, particularly lithography
- Can define horizontal and vertical wiring
- Alternative to some defect-prone processes such as etch-back
- Reduced defect density
- Can provide alternative architectures such as damascene
CMP, a key enabling process technology first developed in the mid-1980s, is
necessary to produce nearly flat surfaces for lithography as well as many of
the structures used in current and future devices. Because of depth-of-field
limitations with lithography tools, portions of exposed areas would be out of
focus at the highest or lowest point. CMP is used to produce shallow trench
isolations (for tighter device to device spacing), capacitors, and to
planarize insulators that conformally coat conductors.
This technology-marketing report examines and projects the technologies
involved in the planarization of semiconductor layers. The Emphasis is on
Chemical Mechanical Polishing (CMP), a process technology that has emerged as
a key solution to many of the problems associated with uneven surface
topography on IC devices. Current issues related to this technology are
addressed.
The complete CMP process is a combination of numerous types of equipment and
consumables. Demand in the semiconductor industry is not limited to polishers
and oxide slurries, but from a plethora of new pad and slurry combinations
arising from the need to planarize such metals as aluminum, tungsten, and
copper.
Other technologies will see a concomitant growth with the polisher and
consumables market. These include efficient distribution systems to mix,
dilute, filter, and deliver slurry and post-CMP clean materials to the CMP
modules and post-CMP clean systems; and metrology equipment to measure
planarity, film thickness, and surface defects.
This report discusses the technology trends, products, applications, and
suppliers of materials and equipment. It also gives insights to suppliers for
future user needs and should assist them in long-range planning, new product
development and product improvement. A market forecast for CMP equipment and
materials is presented.
Table of Contents
Chapter 1 - Introduction
Chapter 2 - Executive Summary
- 2.1. Introduction
- 2.2. Market Opportunities
Chapter 3 - Planarization Methods
- 3.1. Need for Planarity
- 3.1.1. Lithography
- 3.1.2. Deposition
- 3.1.3. Etching
- 3.2. Applications
- 3.2.1. Dielectrics
- 3.2.2. Metals
- 3.3. Planarization Techniques
- 3.3.1. Local Planarization
- 3.3.1.1. Deposition-Etchback
- 3.3.1.2. ECR
- 3.3.1.3. Oxide Reflow
- 3.3.1.4. Spin-on-Glass
- 3.3.1.5. TEOS-Ozone
- 3.3.1.6. Laser
- 3.3.2. Global Planarization
- 3.3.2.1. Spin-On Polymer
- 3.3.2.2. Polyimide Coating
- 3.3.2.3. Isotropic Etch
- 3.3.2.4. Spin Etch Planarization
- 3.3.2.5. Electropolishing
- 3.4. CMP
- 3.4.1. Background
- 3.4.2. Research Efforts
- 3.4.3. Advantages and Disadvantages
- 3.4.4. Process Parameters
- 3.4.4.1. STI Planarization
- 3.4.4.2. Copper CMP
- 3.4.4.3. Low-K Integration
- 3.4.4.4. Defect Density
- 3.4.4.5. Metrology
- 3.4.5. Device Processing Parameters
- 3.4.5.1. Memory Devices
- 3.4.5.2. Logic Devices
Chapter 4 - CMP Consumables
- 4.1. Slurries
- 4.1.1. Types
- 4.1.2. pH Effects
- 4.1.3. Oxidizers
- 4.1.4. Particle Morphology Effects
- 4.1.5. Chemical Distribution Management
- 4.1.6. Slurry Supplier Profiles
- 4.1.7. Abrasive Suppliers
- 4.2. Post-CMP Clean
- 4.3. Polishing Pads
- 4.3.1. Types
- 4.3.2. Performance
- 4.3.3. Slurryless Pads
Chapter 5 - CMP Equipment
- 5.1. Single-Head Approach
- 5.1.1. Advantages
- 5.1.2. Disadvantages
- 5.2. Multi-Head Approach
- 5.2.1. Advantages
- 5.2.2. Disadvantages
- 5.3. Equipment Profiles
- 5.3.1. Applied Materials
- 5.3.2. Ebara
- 5.3.3. Strasbaugh
- 5.3.4. Novellus
- 5.3.5. Nikon
- 5.3.6. Doosan Mecatec
- 5.3.7. Other Entrants
- 5.4. Clustered Tools
- 5.5. Competitive Non-CMP Tools
Chapter 6 - User Issues
- 6.1. Cost of Ownership
- 6.2. User Requirements
- 6.3. Benchmarking a Vendor
- 6.3.1. Pricing
- 6.3.2. Vendor Commitment and Attitudes
- 6.3.3. Vendor Capabilities
- 6.3.4. System Capabilities
- 6.4. User-Supplier Synergy
- 6.4.1. Feedback During Equipment Evaluation
- 6.4.2. Feedback During Device Production
- 6.5. Reliability
- 6.6. Equipment Maintainability
Chapter 7 - Market Forecast
- 7.1. Introduction
- 7.2. Market Forecast Assumptions
- 7.3. Equipment Market
- 7.3.1. Introduction
- 7.3.2. CMP Polisher Market
- 7.4. Consumable Market
- 7.4.1. Slurry
- 7.4.2. Pads
LIST OF FIGURES
- 1.1: Process Integration for CMP
- 3.1: Planarization Lengths of Various Methods
- 3.2: Normalized Removal Rates
- 3.3: Reduced Complexity With Copper
- 3.4: Copper Loss From CMP
- 3.5: CMP Copper Process Technologies
- 3.6: CMP Performance Improvements
- 3.7: Polish Endpoint Control
- 4.1: Effect of Nitrate Ions on the Cu Removal Rate
- 4.2: Removal Rate of Ta
- 4.3: Bulk Chemical Distribution System
- 4.4: Through The Brush Chemical Delivery
- 4.5: Megasonics Post-CMP Clean
- 4.6: Micrograph Of 3M Slurryless Pad
- 6.1: Effect of Tool MTBF on CMP Cost
- 6.2: Removal Rate Vs Throughput and CMP Cost
- 7.1: Worldwide CMP Polisher Market
- 7.2: Worldwide CMP Slurry Market Forecast
- 7.3: CMP Slurry Market by Application
- 7.4: ILD Slurry Market Share - 2010
- 7.5: STI Slurry Market Share - 2010
- 7.6: Copper Barrier Slurry Market Share - 2010
- 7.7: Copper Step 1 Slurry Market Share - 2010
- 7.8: Worldwide CMP Pad Market Forecast
- 7.9: CMP PAD Market Shares 2010
LIST OF TABLES
- 3.1: Levels of Integration of Dynamic Rams
- 3.2: Interconnect Levels of Logic Device
- 3.3: Typical Process Specifications
- 3.4: Organic Polymers for IMD Applications
- 3.5: CMP Process Variables
- 3.6: Optimized CMP and Post-CMP Clean Parameters
- 3.7: Interconnect Materials by Segment
- 4.1: CMP Slurry Suppliers
- 4.2: Abrasive Suppliers and Products
- 4.2: Oxide CMP Pad Properties and Performance
- 6.1: Polisher Equipment Targets
- 6.2: Post-CMP Clean Equipment Targets
- 7.1: Worldwide CMP Polisher Market Forecast
- 7.2: Worldwide CMP Polisher Market Shares
- 7.3: Worldwide CMP Slurry Market Forecast
- 7.4: Worldwide Slurry Market Shares
- 7.5: Worldwide CMP Pad Market Forecast
