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半導体材料分析(2009年):CVD液状化学物質

Semiconductor Material Analysis 2009: CVD Liquid Chemical

発行 DisplayBank
出版日 2009年08月 商品コード 102554
ページ情報 英文  
価格
こちらの商品の販売は終了いたしました。

当商品の販売は、2011年09月05日を持ちまして終了しました。

原文目次

Abstract

Displaybank newly published Research Report for the semiconductor industry. Displaybank plans to publish Report regarding the material which is one of the key elements in the semiconductor industry focusing especially in the chemical material related report and has published the third report, ' Semiconductor Chemical Material Analysis: CVD Liquid Chemical' .

* This report discusses liquid sources like precursor and TEOS used in CVD (including ALD) process.

Chapter 1. Chemical Vapor Deposition

  • Definition of deposition and introduction of process
  • Introduction of CVD and discussion of CVD by type (LPCVD, PECVD, MOCVD, ALD), characteristic, strength and weakness
  • Explanation of insulating film deposition and metal thin film deposition processes, introduction of CVD precursor and low K material

Chapter 2. Major Semiconductor Maker

  • List of major semiconductor maker by region (excluding Fabless makers)
  • 25 major semiconductor maker information (wafer line capa information and product category by inch of makers including Intel, Samsung Electronics, TI and Toshiba)

Chapter 3. Global CVD Liquid Chemical Market Trend

  • Half-year based market trend and forecast analysis of ILD Sources including TEOS, B Source (TEB, TMB), and P Source (TEPO, TMOP) from 2008 to 2011
  • Half-year based market trend and forecast analysis of metal thin film CVD-use source (TiCl4, TDMAT, ALPIS) including Al, Cu, Ti, TiN, and TaN from 2008 to 2011(quantity and revenue based)
  • Half-year based market trend and forecast analysis of high K source (TEMAZr, TEMAHf, TMA) from 2008 to 2011 (quantity and revenue based)
  • Half-year based market trend and forecast analysis of above 3 items in U.S. (North America), Europe, Korea, Japan, Taiwan, China, and other regions by material from 2008 to 2011 (quantity and revenue based)

Chapter 4. Korea Market Analysis

  • Semiconductor information of makers including Samsung Electronics and Hynix by line (inch, capa, half-year based wafer input, product, line change)
  • Usage analysis of ILD source, metal precursor (ALPIS, TiCH4, TDMAT), high K precursor (TMA, TEMAZr, TEMAHf) by maker' s business site (2008 half-year based actual usage volume and 2009 half-year based usage volume forecast)
  • Maker' s business site based supplier analysis
  • Current (Q2' 09 and Q3' 09 based) monthly average usage volume analysis and supplier of Samsung Electronics and Hynix by individual product (including lab product supply)

Chapter 5. Market Analysis

  • Market summary regarding ILD Source, Metal Precursor, High K Precursor
  • Competition composition analysis regarding each item
  • Price analysis of each item
  • Business issue and flaw analysis of each item

Table of Contents

Chapter 1. Chemical Mechanical Planarization

  • 1. Introduction
  • 2. Semiconductor Manufacturing Process
  • 3. Deposition
    • 3-1. Film Deposition
    • 3-2. Deposition Application
  • 4. CVD (Chemical Vapor Deposition)
    • 4-1. CVD (Chemical Vapor Deposition)
    • 4-2. LPCVD (Low Pressure CVD)
    • 4-3. PECVD (Plasma Enhanced CVD)
    • 4-4. MOCVD (Metal Organic CVD)
    • 4-5. ALD (Atomic Layer Deposition)
  • 5. Dielectric Deposition
  • 6. Metallization
  • 7. CVD Precursor
  • 8. High K Material
  • 9. Low K Material

Chapter 2. Major Semiconductor Maker

  • 1. Semiconductor Maker
    • 1-1. Semiconductor Maker by Region
    • 1-2. Semiconductor by Product Category
  • 2. Major Semiconductor Maker (25#)
    • 2-1. Intel, Samsung, Texas Instruments, Toshiba
    • 2-2. STMicroelectronics, TSMC, Hynix, Renesas, SONY
    • 2-3. NXP, AMD, Infineon, NEC, Freescale, Micron Technology, Fujitsu
    • 2-4. IBM, Elpida Memory, Panasonic, UMC, Sharp, Spansion, Powerchip, ProMOS, Nanya

Chapter 3. Worldwide CVD Liquid Chemical Market Trend

  • 1. Worldwide Market Trend: 2008~2011
    • 1-1. ILD Source: TEOS, B&P Source
    • 1-2. Precursor : Metal (Ti, Ta, Al, Cu, Ru Source)
    • 1-3. Precursor: High K (Hf, Zr, Al Source)
  • 2. Market Trend by Region: 2008~2011
    • 2-1. ILD Source: TEOS, B&P Source
    • 2-2. Precursor : Metal (Ti, Ta, Al, Cu, Ru Source)
    • 2-3. Precursor: High K (Hf, Zr, Al Source)

Chapter 4. Market Trend in Korea

  • 1. Fab Status
    • 1-1. Samsung: Product, Capa, Wafer Size, Input Wafer Trend, Information
    • 1-2. Hynix & Others: Product, Capa, Wafer Size, Input Wafer Trend, Information
  • 2. Market Trend: ILD Source
    • 2-1. Market Trend by Line: Volume
    • 2-2. Market Trend by Line: Amount
    • 2-3. Supply Chain
  • 3. Market Trend: Metal Precursor
    • 3-1. Market Trend by Line: Volume
    • 3-2. Market Trend by Line: Amount
    • 3-3. Supply Chain
  • 4. Market Trend: High K Precursor
    • 4-1. Market Trend by Line: Volume
    • 4-2. Market Trend by Line: Amount
    • 4-3. Supply Chain
  • 5. Market Trend: Overall
    • 5-1. SEC: TEOS, TEB, TEPO, TMA, ALPIS, TEMAZr, TEMAHf, TiCl4, TDMAT
    • 5-2. Hynix: TEOS, TEB, TEPO, TMOP, TMA, TEMAZr, TiCl4, TDMAT

Chapter 5. Market Analysis

  • 1. Market Analysis: ILD Source
    • 1-1. Market Forecast
    • 1-2. Price Trend: TEOS, TEB, TEPO
    • 1-3. Industry Analysis
  • 2. Market Analysis: Metal Precursor
    • 2-1. Market forecast
    • 2-2. Price Trend: TiCl4, ALPIS, TDMAT
    • 2-3. Industry Analysis
  • 3. Market Analysis: High K Precursor
    • 3-1. Market forecast
    • 3-2. Price Trend: TMA, TEMAZr, TEMAHf
    • 3.3. Industry Analysis
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